WO2003021666A1 - Nonvolatile storage device and semiconductor integrated circuit - Google Patents

Nonvolatile storage device and semiconductor integrated circuit Download PDF

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Publication number
WO2003021666A1
WO2003021666A1 PCT/JP2002/006710 JP0206710W WO03021666A1 WO 2003021666 A1 WO2003021666 A1 WO 2003021666A1 JP 0206710 W JP0206710 W JP 0206710W WO 03021666 A1 WO03021666 A1 WO 03021666A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
silicon nitride
oxide film
nitride film
storage device
Prior art date
Application number
PCT/JP2002/006710
Other languages
French (fr)
Japanese (ja)
Inventor
Shoji Shukuri
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Publication of WO2003021666A1 publication Critical patent/WO2003021666A1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

A channel region (9) between a source region (8) and a drain region (7) is overlaid with a silicon oxide film (2), polysilicon oxide film (3), silicon nitride film (4), silicon oxide film (5), and gate electrode (6). The polysilicon film and silicon nitride film constitute an interface state at the tunnel emission side closer to the oxide film (2). The interface state is made to serve mainly to hold charge for information storage to enable thinning of the silicon nitride film. Even an electron emission action such as erasure by tunneling from a nonvolatile storage device comprising a silicon nitride film to hold charge prevents the situation that unconsumable electrons from remaining in a gate insulation film. Erasure by hot hole injection is dispensed with.
PCT/JP2002/006710 2001-08-28 2002-07-03 Nonvolatile storage device and semiconductor integrated circuit WO2003021666A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-257698 2001-08-28
JP2001257698A JP2003068893A (en) 2001-08-28 2001-08-28 Nonvolatile storage cell and semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
WO2003021666A1 true WO2003021666A1 (en) 2003-03-13

Family

ID=19085320

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/006710 WO2003021666A1 (en) 2001-08-28 2002-07-03 Nonvolatile storage device and semiconductor integrated circuit

Country Status (3)

Country Link
JP (1) JP2003068893A (en)
TW (1) TW584943B (en)
WO (1) WO2003021666A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045848B2 (en) 2002-04-18 2006-05-16 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

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KR100446632B1 (en) * 2002-10-14 2004-09-04 삼성전자주식회사 Nonvolatile Silicon/Oxide/Nitride/Silicon/ Nitride/Oxide/ Silicon memory
KR100474850B1 (en) * 2002-11-15 2005-03-11 삼성전자주식회사 Silicon/Oxide/Nitride/Oxide/Silicon nonvolatile memory with vertical channel and Fabricating method thereof
US7075828B2 (en) * 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
US7133313B2 (en) * 2004-04-26 2006-11-07 Macronix International Co., Ltd. Operation scheme with charge balancing for charge trapping non-volatile memory
JP2006196643A (en) * 2005-01-13 2006-07-27 Renesas Technology Corp Nonvolatile semiconductor memory device
JP2006245415A (en) 2005-03-04 2006-09-14 Sharp Corp Semiconductor storage device and manufacturing method therefor and portable electronic equipment
US7612403B2 (en) * 2005-05-17 2009-11-03 Micron Technology, Inc. Low power non-volatile memory and gate stack
US8101989B2 (en) * 2006-11-20 2012-01-24 Macronix International Co., Ltd. Charge trapping devices with field distribution layer over tunneling barrier
KR100815968B1 (en) * 2007-05-17 2008-03-24 주식회사 동부하이텍 Method for manufacturing of semiconductor device
US8252653B2 (en) 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
US8198671B2 (en) 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma
US8987098B2 (en) 2012-06-19 2015-03-24 Macronix International Co., Ltd. Damascene word line
JP5586666B2 (en) 2012-08-01 2014-09-10 力晶科技股▲ふん▼有限公司 Nonvolatile semiconductor memory device and reading method thereof
US9379126B2 (en) 2013-03-14 2016-06-28 Macronix International Co., Ltd. Damascene conductor for a 3D device
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND

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JPS5357771A (en) * 1976-11-04 1978-05-25 Sony Corp Non-volatile memory transistor
US5619051A (en) * 1994-06-27 1997-04-08 Nec Corporation Semiconductor nonvolatile memory cell
JPH09205155A (en) * 1996-01-25 1997-08-05 Sony Corp Manufacture of semiconductor storage device
JP2000030471A (en) * 1998-07-14 2000-01-28 Toshiba Microelectronics Corp Nonvolatile semiconductor memory
JP2000049241A (en) * 1998-07-28 2000-02-18 Matsushita Electron Corp Semiconductor device and its manufacture
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US6278635B1 (en) * 1999-12-03 2001-08-21 Nec Corporation Storage method of semiconductor storage apparatus
JP2002184873A (en) * 2000-10-03 2002-06-28 Sony Corp Non-volatile semiconductor storage device and manufacturing method thereof

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045848B2 (en) 2002-04-18 2006-05-16 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US7544988B2 (en) 2002-04-18 2009-06-09 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US10014312B2 (en) 2002-04-18 2018-07-03 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US7525145B2 (en) 2002-04-18 2009-04-28 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US8507975B2 (en) 2002-04-18 2013-08-13 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US7807530B2 (en) 2002-04-18 2010-10-05 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US7952135B2 (en) 2002-04-18 2011-05-31 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US8674432B2 (en) 2002-04-18 2014-03-18 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US7326616B2 (en) 2002-04-18 2008-02-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US7067373B2 (en) 2002-04-18 2006-06-27 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US8222686B2 (en) 2002-04-18 2012-07-17 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US8907404B2 (en) 2002-04-18 2014-12-09 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US10332901B2 (en) 2002-04-18 2019-06-25 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9093320B2 (en) 2002-04-18 2015-07-28 Renesas Electronic Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9324723B2 (en) 2002-04-18 2016-04-26 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9502430B2 (en) 2002-04-18 2016-11-22 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9735168B2 (en) 2002-04-18 2017-08-15 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Also Published As

Publication number Publication date
TW584943B (en) 2004-04-21
JP2003068893A (en) 2003-03-07

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