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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP491077ApriorityCriticalpatent/JPS5390877A/en
Publication of JPS5390877ApublicationCriticalpatent/JPS5390877A/en
PURPOSE: To prevent the negative resistance oscillation phenomenon for the MOSFET which contains the first resistance layer to be an offset gate between the gate and drain, by providing the second resistance layer for the drain protecteon purpose which is shorter than the first resistance layer between ten substrate and the drain.