JPS5713753A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5713753A JPS5713753A JP8937280A JP8937280A JPS5713753A JP S5713753 A JPS5713753 A JP S5713753A JP 8937280 A JP8937280 A JP 8937280A JP 8937280 A JP8937280 A JP 8937280A JP S5713753 A JPS5713753 A JP S5713753A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrodes
- electrode
- impurity
- gate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To facilitate FETs having different modes by forming two gate electrode of two layers of a silicon electrode and a metallic electrode containing impurity and diffusing the impurity in the silicon gate electrode to form n type and p type silicon gate electrodes. CONSTITUTION:A phosphorus-containing Mo silicide film 5 and a boron-containing MO silicate film 6 are formed on a polycrystalline Si 4 on a silicon substrate 1 having a field oxidized film 2 and a gate oxidized film 3, are then patterned, and gate electrodes of two layers of the first Si gate electrodes 4d, 4e and the second impurity-containing metallic silicide gate electrodes 5d, 5e are formed. The impurity and boron contained in the second electrode are diffused respectively in the second Si gate electrodes to form n type and p type gate electrodes 4d, 4e, and a depletion mode FET and an enhancement mode FET are formed due to the work difference between the electrodes. Thus, both mode transistors can be readily formed on the same substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8937280A JPS5713753A (en) | 1980-06-30 | 1980-06-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8937280A JPS5713753A (en) | 1980-06-30 | 1980-06-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5713753A true JPS5713753A (en) | 1982-01-23 |
Family
ID=13968856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8937280A Pending JPS5713753A (en) | 1980-06-30 | 1980-06-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5713753A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59123654U (en) * | 1983-02-10 | 1984-08-20 | 日産自動車株式会社 | Evaporated fuel control device for internal combustion engine |
| JPS6165470A (en) * | 1984-09-07 | 1986-04-04 | Hitachi Ltd | Semiconductor ic device |
| JPS62131561A (en) * | 1985-11-27 | 1987-06-13 | シ−メンス、アクチエンゲゼルシヤフト | Manufacture of high density integrated circuit |
| US4851369A (en) * | 1987-12-04 | 1989-07-25 | U.S. Philips Corporation | Method of establishing a structure of electrical interconnections on a silicon semiconductor device |
| JPH05183117A (en) * | 1991-06-21 | 1993-07-23 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
-
1980
- 1980-06-30 JP JP8937280A patent/JPS5713753A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59123654U (en) * | 1983-02-10 | 1984-08-20 | 日産自動車株式会社 | Evaporated fuel control device for internal combustion engine |
| JPS6165470A (en) * | 1984-09-07 | 1986-04-04 | Hitachi Ltd | Semiconductor ic device |
| JPS62131561A (en) * | 1985-11-27 | 1987-06-13 | シ−メンス、アクチエンゲゼルシヤフト | Manufacture of high density integrated circuit |
| US4851369A (en) * | 1987-12-04 | 1989-07-25 | U.S. Philips Corporation | Method of establishing a structure of electrical interconnections on a silicon semiconductor device |
| JPH05183117A (en) * | 1991-06-21 | 1993-07-23 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
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