JPH01198076A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH01198076A
JPH01198076A JP2325288A JP2325288A JPH01198076A JP H01198076 A JPH01198076 A JP H01198076A JP 2325288 A JP2325288 A JP 2325288A JP 2325288 A JP2325288 A JP 2325288A JP H01198076 A JPH01198076 A JP H01198076A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
trench
gt
lt
5b
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2325288A
Other versions
JPH01198076K1 (en )
Inventor
Hajime Akiyama
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66325Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333Vertical insulated gate bipolar transistors
    • H01L29/66348Vertical insulated gate bipolar transistors with a recessed gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • H01L29/7396Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

PURPOSE:To enable the increase of latchup yield strength, by forming trench to reduce a first conductivity type base on the source side of a vertical gate structure IGBT, and forming a source electrode stretching as far as the trench bottom, or installing, instead of the trench, a first conductivity type diffusion region of high impurity concentration. CONSTITUTION:The source side surface of a vertical gate structure IGBT is flattened, and the source side surface except the exposed region of a P<+> base layer 3 is covered with a resist film 11. By using the resist film 11 as a mask, a second trench 5b is dug, the surface side region of the P<+> base layer 3 is shaved off. The resist film 11 is eliminated, and a source electrode 8 stretching as far as the side surface and the bottom surface of the second trench 5b is formed. A drain electrode 10 is formed, and polysilicon 7 is buried in the second trench 5b to complete a semiconductor device. A P<++> high concentration diffusion region 12 of low resistance is installed instead of the trench 5b, and the series resistance component between the P<+> base layer 3 and the source electrode 8 is reduced. Thereby latchup yield strength can be improved.
JP2325288A 1988-02-02 1988-02-02 Semiconductor device Pending JPH01198076K1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2325288A JPH01198076K1 (en) 1988-02-02 1988-02-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2325288A JPH01198076K1 (en) 1988-02-02 1988-02-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH01198076A true true JPH01198076A (en) 1989-08-09
JPH01198076K1 JPH01198076K1 (en) 1989-08-09

Family

ID=12105408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2325288A Pending JPH01198076K1 (en) 1988-02-02 1988-02-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH01198076K1 (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
US5329142A (en) * 1991-08-08 1994-07-12 Kabushiki Kaisha Toshiba Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure
US5385852A (en) * 1993-01-14 1995-01-31 Siemens Aktiengesellschaft Method for manufacturing vertical MOS transistors
EP0654173A1 (en) * 1992-08-07 1995-05-24 Advanced Power Technology Inc. High density power device structure and fabrication process
US5572055A (en) * 1992-11-09 1996-11-05 Fuji Electric Co., Ltd. Insulated-gate bipolar transistor with reduced latch-up
US5578851A (en) * 1994-08-15 1996-11-26 Siliconix Incorporated Trenched DMOS transistor having thick field oxide in termination region
EP0755076A2 (en) * 1995-07-21 1997-01-22 Mitsubishi Denki Kabushiki Kaisha Vertical MOS semiconductor with recessed gate and method of manufacturing the same
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5623152A (en) * 1995-02-09 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
US5925899A (en) * 1997-05-27 1999-07-20 Mitsubishi Denki Kabushiki Kaisha Vertical type insulated gate bipolar transistor having a planar gate structure
US6107650A (en) * 1994-02-21 2000-08-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US6118150A (en) * 1996-04-01 2000-09-12 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of manufacturing the same
WO2001065606A3 (en) * 2000-02-28 2002-02-14 Infineon Technologies Ag Field effect transistor configuration having a high latch-up strength and method for the production thereof
JP2006140263A (en) * 2004-11-11 2006-06-01 Sanken Electric Co Ltd Semiconductor element and manufacturing method thereof
CN105374859A (en) * 2015-11-10 2016-03-02 株洲南车时代电气股份有限公司 Trench gate type IGBT chip and manufacturing method therefor
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165360A (en) * 1980-05-23 1981-12-18 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5772365A (en) * 1980-08-25 1982-05-06 Itt High voltage semiconductor switch
JPS6231167A (en) * 1985-07-30 1987-02-10 Eaton Corp Bidirectional power fet having on state of bipolar

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165360A (en) * 1980-05-23 1981-12-18 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5772365A (en) * 1980-08-25 1982-05-06 Itt High voltage semiconductor switch
JPS6231167A (en) * 1985-07-30 1987-02-10 Eaton Corp Bidirectional power fet having on state of bipolar

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801417A (en) * 1988-05-17 1998-09-01 Advanced Power Technology, Inc. Self-aligned power MOSFET device with recessed gate and source
US5329142A (en) * 1991-08-08 1994-07-12 Kabushiki Kaisha Toshiba Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure
EP0654173A4 (en) * 1992-08-07 1996-08-14 Advanced Power Technology High density power device structure and fabrication process.
EP0654173A1 (en) * 1992-08-07 1995-05-24 Advanced Power Technology Inc. High density power device structure and fabrication process
US5648283A (en) * 1992-08-07 1997-07-15 Advanced Power Technology, Inc. High density power device fabrication process using undercut oxide sidewalls
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
US5624855A (en) * 1992-11-09 1997-04-29 Fuji Electric Co., Ltd. Process of producing insulated-gate bipolar transistor
US5572055A (en) * 1992-11-09 1996-11-05 Fuji Electric Co., Ltd. Insulated-gate bipolar transistor with reduced latch-up
US5385852A (en) * 1993-01-14 1995-01-31 Siemens Aktiengesellschaft Method for manufacturing vertical MOS transistors
US6331466B1 (en) 1994-02-21 2001-12-18 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US6323508B1 (en) 1994-02-21 2001-11-27 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US6107650A (en) * 1994-02-21 2000-08-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US5578851A (en) * 1994-08-15 1996-11-26 Siliconix Incorporated Trenched DMOS transistor having thick field oxide in termination region
US5639676A (en) * 1994-08-15 1997-06-17 Siliconix Incorporated Trenched DMOS transistor fabrication having thick termination region oxide
US5614751A (en) * 1995-01-10 1997-03-25 Siliconix Incorporated Edge termination structure for power MOSFET
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US5623152A (en) * 1995-02-09 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
EP0755076A3 (en) * 1995-07-21 1997-02-19 Mitsubishi Electric Corp
EP1237201A2 (en) * 1995-07-21 2002-09-04 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of manufacturing the same
EP0755076A2 (en) * 1995-07-21 1997-01-22 Mitsubishi Denki Kabushiki Kaisha Vertical MOS semiconductor with recessed gate and method of manufacturing the same
EP1237201A3 (en) * 1995-07-21 2003-04-23 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of manufacturing the same
US6118150A (en) * 1996-04-01 2000-09-12 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of manufacturing the same
USRE38953E1 (en) 1996-04-01 2006-01-31 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of manufacturing the same
US5925899A (en) * 1997-05-27 1999-07-20 Mitsubishi Denki Kabushiki Kaisha Vertical type insulated gate bipolar transistor having a planar gate structure
WO2001065606A3 (en) * 2000-02-28 2002-02-14 Infineon Technologies Ag Field effect transistor configuration having a high latch-up strength and method for the production thereof
JP2006140263A (en) * 2004-11-11 2006-06-01 Sanken Electric Co Ltd Semiconductor element and manufacturing method thereof
US9935193B2 (en) 2012-02-09 2018-04-03 Siliconix Technology C. V. MOSFET termination trench
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
CN105374859A (en) * 2015-11-10 2016-03-02 株洲南车时代电气股份有限公司 Trench gate type IGBT chip and manufacturing method therefor
CN105374859B (en) * 2015-11-10 2018-09-14 株洲南车时代电气股份有限公司 Species trench gate chip and its manufacturing method igbt

Also Published As

Publication number Publication date Type
JPH01198076K1 (en) 1989-08-09 grant

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