JPH01309054A - Formation of fine pattern - Google Patents
Formation of fine patternInfo
- Publication number
- JPH01309054A JPH01309054A JP14104888A JP14104888A JPH01309054A JP H01309054 A JPH01309054 A JP H01309054A JP 14104888 A JP14104888 A JP 14104888A JP 14104888 A JP14104888 A JP 14104888A JP H01309054 A JPH01309054 A JP H01309054A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- substrate
- resist layer
- fine
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000001312 dry etching Methods 0.000 abstract description 7
- 230000001070 adhesive effect Effects 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009963 fulling Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は″Ｉ！導体基板などの基板−１に微細なパタ
ーンを形成する方法にＩｉ’ｌするしのである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention is directed to a method of forming a fine pattern on a substrate-1 such as a conductor substrate.
第３図 （ａ）〜（Ｃ）は各々従来の微細パターン形成
方法をポリ断面図である。以下、同図を参照しつつその
方法の説明をする。FIGS. 3A to 3C are cross-sectional views of conventional fine pattern forming methods. The method will be explained below with reference to the same figure.
まず、凹凸部を有する半導体基板１上に平坦性の１帰れ
たフｓ ｔ−レジスト層（またはポリイミド膜層）２を
ｊ９り塗布し、同図（ａ）に示すように平坦化する。First, a flattened resist layer (or polyimide film layer) 2 is coated on a semiconductor substrate 1 having uneven portions, and is planarized as shown in FIG. 3(a).
次に、このフォトレジスト層２上にドライエツチング耐
性の優れた無機嗅であるシリコン酸化膜３をスピンコー
ドし形成する。さらに、このシリ−１ン酸化膜３上にパ
ターン形成能の優れたフォト・レジスト層４を簿く形成
することひ同図（ａ）に承りよう１．：３層の多層レジ
スト１００が形成される。Next, on this photoresist layer 2, a silicon oxide film 3, which is an inorganic material having excellent dry etching resistance, is formed by spin-coding. Furthermore, a photoresist layer 4 having excellent pattern formation ability is formed on this silicon oxide film 3 as shown in FIG. 1(a). : A three-layer multilayer resist 100 is formed.
そしＣ１フォトレジスト層４を写真製版によりＩＦ確な
パターン形成し、パターン形成されたフォトレジスト層
４をマスクとして、シリコン酸化膜３をエツチングする
ことぐ、同図（ｂｌに示ゾように）Ｊ＋〜レジスト層４
のパターン４０を転写したパターン３０を形成する、。Then, a precise IF pattern is formed on the C1 photoresist layer 4 by photolithography, and the silicon oxide film 3 is etched using the patterned photoresist layer 4 as a mask. ~Resist layer 4
A pattern 30 is formed by transferring the pattern 40 of .
そしＣ１これらのパターン４０．３０をマスクとしてフ
ォトレジスト層２をドライ」−ツチングする。この時、
シリコン酸化膜３はドライエツチングｌ１ｉＪ竹が（う
れていることから、１７い）Ａトレジストｂ？ｉ ２を
容易にエツチング処理でさる１、なお、パターン４０は
この時、同時に−１−ツチングされ、同図（ｃｌに示す
ように微細な多層レジストパターン２ （）０が形成で
さる。この多層レジストパターン２００をマスクとして
凹凸部を有する半導体基板１トに正確な微細な表面パタ
ーン（図示１！ｆ、）を形成できる。Then, using these patterns 40 and 30 as a mask, the photoresist layer 2 is dry-etched. At this time,
The silicon oxide film 3 is dry-etched (17 thick because it is wet) A resist b? The pattern 40 is etched by -1 at the same time, and a fine multilayer resist pattern 2 ()0 is formed as shown in the same figure (cl). Using the resist pattern 200 as a mask, an accurate fine surface pattern (1!f in the figure) can be formed on a semiconductor substrate 1 having uneven portions.
（発明が解決しようとする課題）
従来の微細パターン形成方法は以上のように行われてい
た。(Problems to be Solved by the Invention) The conventional fine pattern forming method was performed as described above.
しかしながら、フＡ［・レジスト層２は半導体基板１と
の密着性が悪いため、このフォトレジスト層２のパター
ン２０は半導体基板１から比較的容易に剥離する。この
ｌこめ、多層微細パターン２００形成時や、半導体基板
１の表面パターン形成時にこのパターン２０が゛ト導体
基板１から剥離する場合がある。すると、パターン不良
等が生じ、半導体基板１に微細な表面パターンを正確に
形成でさないという問題点があった。However, since the photoresist layer 2 has poor adhesion to the semiconductor substrate 1, the pattern 20 of the photoresist layer 2 is relatively easily peeled off from the semiconductor substrate 1. Due to this, the pattern 20 may peel off from the conductive substrate 1 when forming the multilayer fine pattern 200 or when forming the surface pattern of the semiconductor substrate 1. This poses a problem in that pattern defects and the like occur, and a fine surface pattern cannot be accurately formed on the semiconductor substrate 1.
この発明は」−記のような問題点を解決するためになさ
れたもので、基板の表面部に微細な表面パターンを正確
に形成できる微細パターン形成方法を１足供することを
［１的とする。This invention was made in order to solve the problems mentioned above, and its object is to provide a method for forming a fine pattern that can accurately form a fine surface pattern on the surface of a substrate. .
（課題を解決づ゛るための手段）
この発明にかかる微細パターン形成方法は、基板の表面
部に微細な表面パターンを形成づ−る方法で・あって、
曲配り根土に対する密着性に畠″む第１のレジスト層を
前記基板上に形成する第１の二［程と、前記第１のレジ
スト層上に第１の」ツヂングに３３ける１ツプング耐性
の優れた第２のレジスト層を形成する第２の１程と、前
記第２のレジスト層上に第２のエツチングにＪ３けるド
ライエツチング耐性の優れた第３のレジスト層を形成す
る第３のゴー程と、前記第３のレジスト層に所定の微細
パターンを形成する第４の［程と、前記第４の工程でパ
ターン形成された第３３のレジスト層をマスクとしＣ前
記第２のエツチングを行い前記第１〜第３のレジスト層
による微細多層パターンを形成１Ｊる第５の工程と、前
記微細多層パターンをマスクとして前；ば１第１の１″
ツチングを行い、Ｏ；ｉ記草根の表面部に所定の微細な
パターンを形成σる′５６の工程とを含んで・いる。(Means for Solving the Problems) A fine pattern forming method according to the present invention is a method for forming a fine surface pattern on a surface portion of a substrate, and comprises:
forming a first resist layer on the substrate that has good adhesion to the curved soil; a second resist layer with excellent dry etching resistance in the second etching J3 on the second resist layer; and a third resist layer with excellent dry etching resistance in the second etching process. a fourth step of forming a predetermined fine pattern on the third resist layer; and a second etching step using the 33rd resist layer patterned in the fourth step as a mask. a fifth step of forming a fine multilayer pattern using the first to third resist layers; and a fifth step of forming a fine multilayer pattern using the first to third resist layers;
The method includes the steps of tucking and forming a predetermined fine pattern on the surface of the grass root.
この発明に、１Ｈノる第１の工程で、基板上にこの基板
とのＶ１５着性に富んだ第１のレジメｈ ％＋”４を形
成したため、第５の］−程ににつで第１〜第３のレジス
ト層上
のｙｉ細多層パターンが基板から剥離しにくい。In this invention, in the first step of 1H, a first regime with high V15 adhesion to the substrate was formed on the substrate. The yi thin multilayer patterns on the first to third resist layers are difficult to peel off from the substrate.
第１図 （ａ）〜（Ｃ）は各々この発明の一実施例て・
ある微細パターン形成方法をポリ断面図である。Figure 1 (a) to (C) each represent an embodiment of the present invention.
FIG. 3 is a polygon cross-sectional view showing a certain fine pattern forming method.
以°ト、同図を参照しつつ、その方法を説明する。Hereinafter, the method will be explained with reference to the same figure.
まず、凹凸部を有する半導体基板１十に密着性に富んだ
環化ゴム系樹脂からなる、ネガ型感光特例を右するフォ
トレジストに？４５を薄く形成する。First, a photoresist made of a cyclized rubber-based resin that has excellent adhesion to a semiconductor substrate 10 having uneven parts and which is a negative-tone photosensitive material. 45 is formed thinly.
そして、このフォトレジスト月桑層５上にノボラック系
樹脂からなるポジ型感光特性を右するフォトレジスト膜
２を淳く形成η゛る。このフＡ［・レジスト層２は平ｌ
ｌ性に優れ、半導体基板１表面部に微細パターンを形成
する際のエツチング耐性が良い。このため、）Ａｔ−レ
ジスト層２の形成侵には、同図（ａ）に示すように表向
部は平ｉｊｌ化する。Then, on this photoresist layer 5, a photoresist film 2 made of a novolac resin and having positive photosensitive characteristics is formed. This film A[・Resist layer 2 is flat
It has excellent etching properties and good etching resistance when forming fine patterns on the surface of the semiconductor substrate 1. Therefore, during the formation of the At-resist layer 2, the surface portion becomes flat as shown in FIG. 2(a).
次に、このフォトレジストＩＶｔ ２ 、Ｌ：にドライ
エツチング耐性の優れた無機膜であるシリコン酸化膜３
をスピン：］−１−ｕ形成する。さらに、このシリコン
酸化膜３士にパターン形成能の優れたフォトレジスト膜
Ｖ４／Ｉを形成することで同図（ａ）に示すように４層
の多層レジスＬ−３００が形成される。Next, a silicon oxide film 3, which is an inorganic film with excellent dry etching resistance, is applied to this photoresist IVt2, L:.
Spin : ]-1-u to form. Furthermore, by forming a photoresist film V4/I with excellent pattern formation ability on these three silicon oxide films, a four-layer multilayer resist L-300 is formed as shown in FIG.
そして、フォトレジスト層４を写真製版により正確なパ
ターンを形成し、パターン形成されたフォトレジスト層
４をマスクとして、シリコン酸化膜層３を１ツチングす
ることで、同図（ｂ）に示すようにフォトレジスト層４
のパターン／１０を転写したパターン３０を形成する。Then, a precise pattern is formed on the photoresist layer 4 by photolithography, and the silicon oxide film layer 3 is etched using the patterned photoresist layer 4 as a mask, as shown in FIG. Photoresist layer 4
A pattern 30 is formed by transferring the pattern /10.
そして、これらのパターン４０．３０をマスクとしてフ
ォトレジスト層２．５をドライエツチングづ°る。この
時、シリコン酸化膜３から得られ（いるパターン３０は
ドライ」ツヂング耐性が優れた無機膜であることから、
厚いフォトレジスト層２及びフォトレジスト層５を容易
にエツチング耐性できる。なお、パターン４０はこの時
、同時エツチングされ、同図（Ｃ）に示すように微細な
多層レジストパターン４００が形成できる。Then, using these patterns 40.30 as a mask, the photoresist layer 2.5 is dry etched. At this time, since the pattern 30 obtained from the silicon oxide film 3 is an inorganic film with excellent resistance to dry
Thick photoresist layers 2 and 5 can be easily etched resistant. Note that the pattern 40 is etched at the same time, and a fine multilayer resist pattern 400 can be formed as shown in FIG.
この多層レジストパターン４００をマスクとして凹凸表
面を有する半導体基板１上に対するエツチングを行う。Using this multilayer resist pattern 400 as a mask, etching is performed on the semiconductor substrate 1 having an uneven surface.
フォトレジスト１Ｆ４２から得られているパターン２０
がエツチング耐性の高いノボラック系樹脂となっている
ことにより、半導体ｇ１１の表面には、特に正確に微細
な表面パターン（図示ゼず。）を形成することかできる
。Pattern 20 obtained from photoresist 1F42
Since the material is a novolac resin with high etching resistance, a particularly fine surface pattern (not shown) can be formed on the surface of the semiconductor g11 with particular precision.
以１−１のプｕ １２スのなかで得られた多層レジスト
パターン４００は、環化ゴム系樹脂からなるパターン５
）０が半導体基板１に対する密着性に富んでいるため、
半導体基板１とパターン５０が半導体基板１から剥離覆
ることなく、良好な多層レジストパターン４００が形成
できるとともに、半導体基板１の表面部に形成される微
細表面パターンも正確な微細パターンとなる。特に半導
体基板１とパターン５０の密着性が重要視されるような
エツチング方法を用いるときに、この方法は極めて有効
である。The multilayer resist pattern 400 obtained in step 1-1 below has a pattern 5 made of cyclized rubber resin.
)0 has high adhesion to the semiconductor substrate 1, so
A good multilayer resist pattern 400 can be formed without the semiconductor substrate 1 and the pattern 50 peeling off from the semiconductor substrate 1, and the fine surface pattern formed on the surface of the semiconductor substrate 1 also becomes an accurate fine pattern. This method is particularly effective when using an etching method in which the adhesion between the semiconductor substrate 1 and the pattern 50 is important.
なお、この実施例では、フォトレジスｉ−膜２としてノ
ボラック系樹脂を示したが、ポリイミド樹脂でも同様の
効果を秦する。In this embodiment, a novolak resin is used as the photoresist i-film 2, but a polyimide resin can also have the same effect.
また、フォトレジスト層５として環化ゴム系樹脂を用い
たときにおいては、環化ゴム系樹脂は半導体基板１のエ
ツチングにおけるエツチング耐性が比較的低いため、第
２図で示すようにこのフォトレジスト層５の膜厚を極め
て薄くした微細多層レジストパターン５００．を形成し
、その１１１があまり反映されないようにすることが望
ましい。Furthermore, when a cyclized rubber-based resin is used as the photoresist layer 5, since the cyclized rubber-based resin has relatively low etching resistance during etching of the semiconductor substrate 1, the photoresist layer A fine multilayer resist pattern 500.5 with an extremely thin film thickness. It is desirable to form 111 so that its 111 is not reflected too much.
また、シリコン酸化膜３．フォトレジスト層４の代りに
パターン形成能とドライエツチング耐性の両方を兼ね備
えたレジスト層（・例えば有機シリコンレジスト）を用
い、このレジスト層に微細パターンを形成し、これをマ
スクとしてドライエツチングにより微細多層レジストパ
ターンを半導体基板１．トに形成１ノでｂよい、。Moreover, silicon oxide film 3. Instead of the photoresist layer 4, a resist layer (for example, an organic silicon resist) that has both pattern forming ability and dry etching resistance is used, a fine pattern is formed on this resist layer, and using this as a mask, a fine multilayer is formed by dry etching. Apply the resist pattern to the semiconductor substrate 1. It is good to form 1 no.
また、この発明は半導体ｇｔ板以外について適用しても
よく、表面に凹凸部を持たない基板であっても、基板と
多層レジストとの密着性が問題となる場合には有効ぐあ
る。Further, the present invention may be applied to other than semiconductor GT boards, and is effective even when the substrate does not have an uneven surface, when the adhesion between the substrate and the multilayer resist is a problem.
以上説明したように、この発明によれば、第１の工程に
おいて、基板上に基板との重管性に富んだ第１のレジス
ト層を形成したため、正確に微細パターン加工が行える
効果がある。As explained above, according to the present invention, in the first step, the first resist layer that has good overlap with the substrate is formed on the substrate, so that there is an effect that fine pattern processing can be performed accurately.
第１図（ａ）〜（Ｃ）は各々この発明の一実施例である
微細パターン形成方法を示す断面図、第２図はこの発明
の他の実施例である微細パターン形成方法を示す断面図
、第３図（ａ）〜（Ｃ）は各々従来の微細パターン形成
方法を示す断面図である。
図において、１は半導体基板、２はフォトレジスト層、
３はシリコン酸化膜、５は環化ゴム系樹脂からなるフォ
トレジスト層、３００は多層レジスト、４００は多層レ
ジストパターンである。
なお、各図中同一符号は同一または相当部分を示す。FIGS. 1(a) to (C) are cross-sectional views showing a fine pattern forming method according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a fine pattern forming method according to another embodiment of the present invention. , and FIGS. 3(a) to 3(C) are cross-sectional views each showing a conventional fine pattern forming method. In the figure, 1 is a semiconductor substrate, 2 is a photoresist layer,
3 is a silicon oxide film, 5 is a photoresist layer made of cyclized rubber resin, 300 is a multilayer resist, and 400 is a multilayer resist pattern. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
法であって、 前記基板上に対する密着性に富む第１のレジスト層を前
記基板Ｌに形成する第１の工程と、前記第１のレジスト
層上に第１のエッチングにおけるエッチング耐性の優れ
た第２のレジスト層を形成する第２の工程と、 前記第２のレジスト層上に第２のエッチングにおけるエ
ッチング耐性の優れた第３のレジスト層を形成する第３
の工程と、 前記第３のレジスト層に所定の微細パターンを形成する
第４の工程と、 前記第４の工程でパターン形成された第３のレジスト層
をマスクとして前記第２のエッチングを行い前記第１〜
第３のレジスト層による微細多層パターンを形成する第
５の工程と、 前記微細多層パターンをマスクとして前記第１のエッチ
ングを行い、前記基板の表面部に所定の微細なパターン
を形成する第６の工程とを含む微細パターンの形成方法
。(1) A method for forming a fine surface pattern on the surface of a substrate, which comprises: a first step of forming a first resist layer having high adhesion to the substrate on the substrate L; a second step of forming a second resist layer with excellent etching resistance in the first etching on the resist layer; and forming a third resist layer with excellent etching resistance in the second etching on the second resist layer. Third forming layer
a fourth step of forming a predetermined fine pattern on the third resist layer; and performing the second etching using the third resist layer patterned in the fourth step as a mask. 1st~
a fifth step of forming a fine multilayer pattern using a third resist layer; and a sixth step of performing the first etching using the fine multilayer pattern as a mask to form a predetermined fine pattern on the surface of the substrate. A method for forming a fine pattern, including a process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14104888A JPH01309054A (en) | 1988-06-07 | 1988-06-07 | Formation of fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14104888A JPH01309054A (en) | 1988-06-07 | 1988-06-07 | Formation of fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01309054A true JPH01309054A (en) | 1989-12-13 |
Family
ID=15283039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14104888A Pending JPH01309054A (en) | 1988-06-07 | 1988-06-07 | Formation of fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01309054A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287199A (en) * | 2000-02-03 | 2001-10-16 | Sumitomo Metal Ind Ltd | Microstructure and its manufacturing method |
| US7235490B2 (en) | 2003-02-28 | 2007-06-26 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138835A (en) * | 1979-04-16 | 1980-10-30 | Fujitsu Ltd | Method of forming photoresist pattern |
| JPS5621328A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Method of making pattern |
| JPS58153242A (en) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | Manufacture of original disk for phonographic or recording disk |
| JPS608842A (en) * | 1983-06-29 | 1985-01-17 | Toshiba Corp | Formation of pattern |
-
1988
- 1988-06-07 JP JP14104888A patent/JPH01309054A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138835A (en) * | 1979-04-16 | 1980-10-30 | Fujitsu Ltd | Method of forming photoresist pattern |
| JPS5621328A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Method of making pattern |
| JPS58153242A (en) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | Manufacture of original disk for phonographic or recording disk |
| JPS608842A (en) * | 1983-06-29 | 1985-01-17 | Toshiba Corp | Formation of pattern |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287199A (en) * | 2000-02-03 | 2001-10-16 | Sumitomo Metal Ind Ltd | Microstructure and its manufacturing method |
| US7235490B2 (en) | 2003-02-28 | 2007-06-26 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
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