JPS6316623A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6316623A JPS6316623A JP16125986A JP16125986A JPS6316623A JP S6316623 A JPS6316623 A JP S6316623A JP 16125986 A JP16125986 A JP 16125986A JP 16125986 A JP16125986 A JP 16125986A JP S6316623 A JPS6316623 A JP S6316623A
- Authority
- JP
- Japan
- Prior art keywords
- film
- intermediate layer
- forming
- thickness
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 12
- 125000005375 organosiloxane group Chemical group 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 15
- 238000001312 dry etching Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241001125046 Sardina pilchardus Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 235000019512 sardine Nutrition 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（概要〕
シリコン（Ｓｉ）等の半導体基板上に形成した〜の配線
膜を所定パターンにドライエツチングする方法であって
、〜の配線膜のような半導体素子形成用被膜を形成した
基板上にノボラック系等の有機樹脂膜、シロキ酸樹脂の
ようなＳＯＧ膜よりなる中間層、感光性ホトレジスト膜
を三層構造に積層形成後、感光性ホトレジスト膜を所定
のパターンに形成する。次いで該パターン形成された感
光性ホトレジスト膜、およびその下の中間層のＳＯＧ膜
を所定パターンにエツチングする。[Detailed Description of the Invention] (Summary) A method for dry etching a wiring film of ~ formed on a semiconductor substrate such as silicon (Si) into a predetermined pattern, the method comprising dry etching a wiring film for semiconductor element formation such as the wiring film of ~. After forming a three-layer structure of an organic resin film such as a novolac resin film, an intermediate layer made of an SOG film such as a siloxic acid resin, and a photosensitive photoresist film on the substrate, the photosensitive photoresist film is formed in a predetermined pattern. Next, the patterned photosensitive photoresist film and the intermediate SOG film thereunder are etched into a predetermined pattern.
次いでパターン形成された感光性ホトレジスト膜、中間
層のＳＯＧ膜をマスクとして、更にその下の有機樹脂膜
を順次エツチングした後、〜の配線膜を所定パターンに
形成するエツチング方法に於いて、前記中間層の厚さを
２０００〜５０００人と分厚（形成して該中間層上に感
光性ホトレジスト膜のパターンを転写するとともに、Ａ
Ｑのような配線膜をエツチングするエツチング剤に対し
てマスクとしての効果を持たせるようにする。Next, using the patterned photosensitive photoresist film and the intermediate layer SOG film as a mask, the organic resin film underneath is sequentially etched, and then the intermediate layer The thickness of the layer is 2,000 to 5,000 people thick (formed) and the pattern of the photosensitive photoresist film is transferred onto the intermediate layer, and
The etching agent used to etch a wiring film such as Q is made to have an effect as a mask.
本発明は半導体装置の製造方法、特に三層構造のレジス
ト験を用いたドライエツチング方法に関する。The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a dry etching method using a three-layer resist structure.
半導体装置の製造に於いては、シリコン（Ｓｔ ）等の
半導体基板上にダイオード、トランジスタ等の半導体素
子を形成後、その上に５ｔｏ２ｉ＊等の絶′縁膜を形成
する。In manufacturing semiconductor devices, semiconductor elements such as diodes and transistors are formed on a semiconductor substrate such as silicon (St 2 ), and then an insulating film such as 5to2i* is formed thereon.
次いでこの上に素子間を接続する〜の配線膜を形成した
後、この配線膜をドライエツチング法等を用いて所定の
パターンに形成している。Next, after forming a wiring film (-) for connecting the elements on this, this wiring film is formed into a predetermined pattern using a dry etching method or the like.
ところで従来の方法として、師の配線膜を形成した基板
の表面は平坦でないため、第３図に示すように、一旦鳩
の配線膜１を形成した基板２上に粘性の大きいノボラッ
ク系のポジ型のホトレジスト膜よりなる有機樹脂１ｍ！
３を塗布して配線膜の段差部分を埋めるようにする。By the way, in the conventional method, since the surface of the substrate on which the master wiring film is formed is not flat, as shown in FIG. 1 m of organic resin made of photoresist film!
3 to fill in the stepped portions of the wiring film.
次いでその上に有機シリコンｍＤＭの一種のシロキ酸樹
脂よりなるスピン−オン−グラス（ＳＯＧ）膜よりなる
中間層４を塗布形成する。Next, an intermediate layer 4 made of a spin-on-glass (SOG) film made of a type of siloxic acid resin of organic silicon mDM is coated thereon.
更にその上に感光性のホトレジスト膜５を塗布する。Furthermore, a photosensitive photoresist film 5 is applied thereon.
その後、感光讐ホトレジスト膜５を露光後、現像して所
定のパターンに形成する。Thereafter, the photoresist film 5 is exposed and developed to form a predetermined pattern.
次いでこの現像されたホトレジスト膜パターンをマスク
として、その下の中間層４を三弗化メタン（ＣＨＦ３
’）ガス、或いは四弗化炭素（ＣＦ ４ ）ガス等のフ
レオン系の反応ガスを用いて所定パターンにエツチング
形成する。Next, using this developed photoresist film pattern as a mask, the intermediate layer 4 below it is coated with methane trifluoride (CHF3).
') A predetermined pattern is formed by etching using gas or a freon-based reactive gas such as carbon tetrafluoride (CF 4 ) gas.
更にこのエツチング形成された感光性ホトレジスト膜５
および中間層４をマスクとしてその下の有機樹脂膜３を
、゛酸素（０２）ガスを反応ガスとして用いたりアクテ
ィブイオンエツチング法により所・定パターンにエツチ
ング形成する。Furthermore, the photosensitive photoresist film 5 formed by this etching
Using the intermediate layer 4 as a mask, the underlying organic resin film 3 is etched into a predetermined pattern using oxygen (02) gas as a reactive gas or by active ion etching.
更にこの所定のパターンに形成された有機樹脂膜３をマ
スクとして、その下の成の配線膜１を四塩化珪、ｍ（Ｓ
ｉα４）ガスのような反応ガスを用いて所定のパターン
に形成する。Furthermore, using the organic resin film 3 formed in a predetermined pattern as a mask, the underlying wiring film 1 is coated with silicon tetrachloride, m(S).
iα4) Forming into a predetermined pattern using a reactive gas such as gas.
ここで、従来はシロキ酸樹脂よりなる中間層４の厚さを
２０００Å以下と薄く形成することで、その上の感光性
ホトレジスト膜５゛で得られたパターンをマスクとして
この中間層４をエツチングする際、このマスクとなる感
光性ホトレジスト膜５のパターンが正確に中間層に形成
されるようにしていた。Here, conventionally, by forming the intermediate layer 4 made of siloxic acid resin as thin as 2000 Å or less, the intermediate layer 4 is etched using the pattern obtained from the photosensitive photoresist film 5 thereon as a mask. At this time, the pattern of the photosensitive photoresist film 5 serving as this mask was accurately formed on the intermediate layer.
然し、このような従来の方法では、中間層４の厚さが薄
く形成されている。However, in such a conventional method, the thickness of the intermediate layer 4 is formed thin.
ここで、第４図に示すように反応ガスが中間層４の側面
Ａよりその下部に回り込んで、中間層４の下の有機樹脂
膜３の側壁がエツチングされるようになる場合がある。Here, as shown in FIG. 4, the reaction gas may enter the lower part of the intermediate layer 4 from the side surface A, and the side wall of the organic resin film 3 below the intermediate layer 4 may be etched.
このような時、この次の工程で前記側壁がエツチングさ
れた有機樹脂膜３をマスクとして用いてその下の８Ｑの
配線ＩＪ １をエツチングした場合、前記した中間層４
ば、その厚さが薄いために、この〜の配線膜のエツチン
グ剤に対してマスク性を有していないため、〜の配線膜
１が、設計寸法どおり精度良くエツチングされない問題
点を生じる。In such a case, if the organic resin film 3 whose sidewalls have been etched is used as a mask to etch the 8Q wiring IJ1 therebelow in the next step, the intermediate layer 4 described above may be etched.
For example, because of its thin thickness, it does not have masking properties against the etching agent for the wiring film 1, which causes the problem that the wiring film 1 is not etched with high accuracy according to the designed dimensions.
本発明は上記した問題点を解決し、中間層４の厚さを２
０００〜５０００人の厚さで従来より厚く形成すること
で、３層レジスト膜の有機樹脂Ｍ！！３の側壁がエツチ
ングされた場合に於いても、〜の配線膜等の半導体装置
形成用の被膜が設計寸法どおりに高精度にエツチングで
きるような半導体装置の製造方法の提供を目的とする。The present invention solves the above problems and reduces the thickness of the intermediate layer 4 to 2.
By forming the film thicker than before, with a thickness of 000 to 5000, the organic resin M of the 3-layer resist film! ! To provide a method for manufacturing a semiconductor device in which a film for forming a semiconductor device such as a wiring film in .
本発明の半導体装置の製造方法は、エツチングすべき〜
配線膜のような半導体素子形成用被膜上に、有機樹脂膜
、中間層、感光性ホトレジスト膜を三層構造に形成し、
感光性ホトレジスト膜、および中間層を所定のパターン
に形成した後、該感光性ホトレジスト膜と中間層をマス
クとして、その下の有機樹脂膜、および半導体素子形成
用被膜をエツチングする場合に於いて、
前記中間層の厚さを２０００〜５０００人の厚さとする
。In the method for manufacturing a semiconductor device of the present invention, etching should be performed.
An organic resin film, an intermediate layer, and a photosensitive photoresist film are formed in a three-layer structure on a semiconductor element forming film such as a wiring film.
After forming a photosensitive photoresist film and an intermediate layer in a predetermined pattern, when etching the underlying organic resin film and semiconductor element forming film using the photosensitive photoresist film and intermediate layer as a mask, The thickness of the intermediate layer is 2,000 to 5,000 people.
本発明の半導体装置の製造方法は、〜配線膜のような半
導体素子形成用被膜の上に有機樹脂膜、中間層、感光性
ホトレジスト膜を三層構造に形成し、該感光性ホトレジ
スト膜および中間層をマスクとして、有機樹脂膜、半導
体素子形成用被膜をエツチングする際、前記中間層の厚
さを分厚く形成することで、該中間層にその上の感光性
ホトレジスト膜で形成されたパターンをエツチングによ
って精度良く転写する機能の他に、鰯の配線膜のエツチ
ングに於ける反応ガスに対するマスクとしての働きを持
たせるようにする。The method for manufacturing a semiconductor device of the present invention includes forming a three-layer structure of an organic resin film, an intermediate layer, and a photosensitive photoresist film on a film for forming a semiconductor element such as a wiring film, and When etching an organic resin film or a film for forming a semiconductor element using the layer as a mask, by forming the intermediate layer thickly, the pattern formed with the photosensitive photoresist film thereon can be etched into the intermediate layer. In addition to the function of transferring with high precision, it also functions as a mask against the reactive gas during etching of the sardine wiring film.
そして仮に有機樹脂膜の側壁がエツチングされた場合に
於いても、設計寸法どおりに高精度に剖の配線膜のよう
な半導体装置形成用の被膜がエツチングされるようにす
る。Even if the side wall of the organic resin film is etched, a film for forming a semiconductor device, such as a wiring film, can be etched with high precision according to the designed dimensions.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図に示すように、前記したＭ等の半導体装置形成用
の被膜１１を形成したＳｉ基板１２上に、ノボラック系
等のポジ型レジスト膜１３を、例えば１〜２μｍの厚さ
に塗布形成して被１＊１１によって段差が生じている基
板表面を平坦にする。As shown in FIG. 1, a positive resist film 13 made of novolak or the like is coated to a thickness of 1 to 2 μm, for example, on a Si substrate 12 on which a film 11 for forming a semiconductor device such as M described above is formed. Then, the surface of the substrate, which has a step difference due to the coating 1*11, is made flat.
次いでその上に例えば、ＳＯＧ膜としてのポリラダーオ
ルガノシロキサン樹脂膜よりなる中間層１４を２０００
〜５０００人の厚さに塗布形成した後、加熱して硬化さ
せる。Next, an intermediate layer 14 made of, for example, a polyladder organosiloxane resin film as an SOG film is deposited thereon at a thickness of 2,000 yen.
After coating to a thickness of ~5,000 people, it is heated and cured.
次いでこの上に感光性ホトレジスト膜１５を所定の厚さ
に塗布形成する。Next, a photosensitive photoresist film 15 is applied thereon to a predetermined thickness.
次いで感光性ホトレジスト膜１５をホトリソグラフィ法
で所定のパターンに形成した後、該ホトレジスト膜をマ
スクとして中間層を三弗化メタンガス、或いは四弗化炭
素ガス等の反応ガスを用いて、所定のパターンにエツチ
ングする。Next, a photosensitive photoresist film 15 is formed into a predetermined pattern by photolithography, and then, using the photoresist film as a mask, the intermediate layer is formed into a predetermined pattern using a reactive gas such as methane trifluoride gas or carbon tetrafluoride gas. Etching.
更にパターン形成された中間層１４をマスクとして用い
てその下のノボラック系のポジ型レジスト膜よりなる有
機樹脂膜１３を酸素ガスプラズマによす所定のパターン
にエツチング形成する。Further, using the patterned intermediate layer 14 as a mask, the underlying organic resin film 13 made of a novolac positive type resist film is etched into a predetermined pattern using oxygen gas plasma.
このようにすれば、中間層１４がその上の感光性レジス
ト膜１５で形成されたパターンを忠実に有機樹脂膜１３
に工・ノチングによって転写するとともに、その下の〜
の配線膜の被膜１１をエツチングする際の四塩化珪素ガ
スのような塩素系の反応性ガスに対しても充分マスクと
しての耐性を併せ有するようになる。In this way, the intermediate layer 14 can faithfully follow the pattern formed by the photosensitive resist film 15 thereon on the organic resin film 13.
At the same time as transferring by carving and notching, the ~ below
It also has sufficient resistance as a mask against chlorine-based reactive gas such as silicon tetrachloride gas when etching the film 11 of the wiring film.
そのため、この中間層１４の下の有機樹脂膜１３の側壁
がエツチングされるような現象が生じた場合に於いても
、〜の配線膜の被膜１１が設計値どおりの高精度な寸法
でエツチング形成される。Therefore, even if a phenomenon occurs in which the side wall of the organic resin film 13 under this intermediate layer 14 is etched, the coating 11 of the wiring film 11 is etched and formed with highly accurate dimensions as designed. be done.
また中間層１４の反応ガスに対する耐ドライエツチング
性が大と成って反応ガスに侵されないため、ドライエツ
チングする際の装置に印加する高周波電力を大きく保つ
ことが出来るため、エツチング速度が増大して処理能力
が向上する。In addition, the intermediate layer 14 has a high dry etching resistance against the reactive gas and is not attacked by the reactive gas, so the high frequency power applied to the device during dry etching can be kept high, increasing the etching speed and processing. Your abilities will improve.
また実験の結果、中間層１４の厚さを５０００人まで厚
くしても、その上の感光性レジスト膜１５で形成された
パターンを、エツチングによって中間層１４に忠実に転
写することができる。Moreover, as a result of experiments, even if the thickness of the intermediate layer 14 is increased to 5,000 layers, the pattern formed by the photosensitive resist film 15 thereon can be faithfully transferred to the intermediate layer 14 by etching.
以上述べたように本発明の方法によれば、師の配線膜の
ような半導体装置形成用の被膜が１Ｆｌｉ ！ｒｉ度に
、かつエンチング速度を速めた状態で工・ノチングでき
るので、高信頼度の半導体装置が高能率に形成できる効
果がある。As described above, according to the method of the present invention, a film for forming a semiconductor device, such as a master wiring film, can be reduced to 1Fli! Since etching and notching can be performed at a high degree of ri and at an increased etching speed, there is an effect that highly reliable semiconductor devices can be formed with high efficiency.
第１図より第２図迄は本発明の半導体装置の製造方法の
一実施例を工程順に示す断面図、第３図は従来の方法を
説明するための断面図、第４図は従来の方法に於ける不
都合な状態を説明する断面図である。
図に於いて、
１１は被膜、１２は基板、１３は有機樹脂膜、１４は中
間層、１５は感光性レジスト膜を示す。
事発明褐方法にかすｊす閏層、βχ性し’Ｚｆ−ｆｆ妻
靜残゛Ｕ第１図
イト劣≦碗与乃銖１粛り１ｒす７酎内１．穐まイー士し
ジ゛７１臭、エッ１づンフ′、工半ｉ図第２図
電力＝１臣の力３」ｂ九本イー１シ１しｍ、１Ｆ、屓に
、ま７１計Ｌン’２）４絽１ブｐ＼゛ｍ第３ｗ１
沫和伎法Ｉｚ７？斡不看ド可狡蒐−餞明ｍ第４図1 to 2 are cross-sectional views showing an embodiment of the semiconductor device manufacturing method of the present invention in the order of steps, FIG. 3 is a cross-sectional view for explaining the conventional method, and FIG. 4 is a cross-sectional view of the conventional method. FIG. In the figure, 11 is a coating, 12 is a substrate, 13 is an organic resin film, 14 is an intermediate layer, and 15 is a photosensitive resist film. According to the method of invention, the leap layer, βχ property is 'Zf-ff wife still remains. 71 odor, 71 odor, 1 zunfu', engineering half diagram, 2 electric power = 1 minister's power, 3''b, 9 pieces, 1 floor, 1 floor, 71 total L N'2) 4 絽1bu p\゛m 3rd w1 沫和き法 Iz7? Figure 4
Claims (1)
成後、該基板（１２）上に有機樹脂膜（１３）、中間層
（１４）感光性ホトレジスト膜（１５）を積層後、該感
光性ホトレジスト膜（１５）を所定パターンに形成し、
該パターン形成された感光性ホトレジスト膜（１５）を
マスクとして下部の中間層（１４）を所定パターンに形
成し、該パターン形成された感光性ホトレジスト膜（１
５）およびその下の中間層（１４）をマスクとして、有
機樹脂膜（１３）、被膜（１１）を順次エッチングする
方法に於いて、 前記中間層（１４）の厚さを２０００〜５０００Åの厚
さとすることを特徴とする半導体装置の製造方法。[Claims] After forming a film (11) for forming an element on a semiconductor substrate (12), an organic resin film (13), an intermediate layer (14) and a photosensitive photoresist film (15) are formed on the substrate (12). ) is laminated, the photosensitive photoresist film (15) is formed into a predetermined pattern,
Using the patterned photosensitive photoresist film (15) as a mask, the lower intermediate layer (14) is formed into a predetermined pattern.
5) and the intermediate layer (14) thereunder as a mask, in the method of sequentially etching the organic resin film (13) and the coating (11), the thickness of the intermediate layer (14) is set to 2000 to 5000 Å. A method for manufacturing a semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125986A JPS6316623A (en) | 1986-07-08 | 1986-07-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125986A JPS6316623A (en) | 1986-07-08 | 1986-07-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6316623A true JPS6316623A (en) | 1988-01-23 |
Family
ID=15731694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16125986A Pending JPS6316623A (en) | 1986-07-08 | 1986-07-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6316623A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743885B2 (en) | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
| US20140220783A1 (en) * | 2011-10-12 | 2014-08-07 | Jsr Corporation | Pattern-forming method and resist underlayer film-forming composition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58110038A (en) * | 1981-12-23 | 1983-06-30 | Nec Corp | Pattern formation |
| JPS6043827A (en) * | 1983-08-20 | 1985-03-08 | Mitsubishi Electric Corp | Formation of fine pattern |
| JPS6115333A (en) * | 1984-06-30 | 1986-01-23 | Nippon Telegr & Teleph Corp <Ntt> | Pattern formation |
-
1986
- 1986-07-08 JP JP16125986A patent/JPS6316623A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58110038A (en) * | 1981-12-23 | 1983-06-30 | Nec Corp | Pattern formation |
| JPS6043827A (en) * | 1983-08-20 | 1985-03-08 | Mitsubishi Electric Corp | Formation of fine pattern |
| JPS6115333A (en) * | 1984-06-30 | 1986-01-23 | Nippon Telegr & Teleph Corp <Ntt> | Pattern formation |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743885B2 (en) | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
| US20140220783A1 (en) * | 2011-10-12 | 2014-08-07 | Jsr Corporation | Pattern-forming method and resist underlayer film-forming composition |
| US9607849B2 (en) * | 2011-10-12 | 2017-03-28 | Jsr Corporation | Pattern-forming method and resist underlayer film-forming composition |
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