JPH0458167B2 - - Google Patents
Info
- Publication number
- JPH0458167B2 JPH0458167B2 JP58151947A JP15194783A JPH0458167B2 JP H0458167 B2 JPH0458167 B2 JP H0458167B2 JP 58151947 A JP58151947 A JP 58151947A JP 15194783 A JP15194783 A JP 15194783A JP H0458167 B2 JPH0458167 B2 JP H0458167B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- etched
- etching
- mask
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 239000000654 additive Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims 3
- 230000001235 sensitizing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- RFCAUADVODFSLZ-UHFFFAOYSA-N 1-Chloro-1,1,2,2,2-pentafluoroethane Chemical compound FC(F)(F)C(F)(F)Cl RFCAUADVODFSLZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000019406 chloropentafluoroethane Nutrition 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- -1 CF 4 or CCl 4 Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は光線、電子ビームなどに感応する感
応性レジスト膜を用いて微細パターンを形成する
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method of forming fine patterns using a sensitive resist film that is sensitive to light, electron beams, and the like.
半導体集積回路装置などの製造工程において
は、半導体基板の主面上にエツチングによつて微
細パターンを形成すべきポリシリコン膜などの被
エツチング膜を形成し、この被エツチング膜の表
面上に、光線、Ｘ線、電子ビームまたはイオンビ
ームに感応する感応性レジストをスピンナ法など
で塗布しベーキングして感応性レジスト膜を成膜
したのちに、この感応性レジスト膜の被エツチン
グ膜の微細パターンを形成すべき部分上の部分が
残るように、この感応性レジスト膜に光線、Ｘ
線、電子ビームまたはイオンビームを照射し現像
してエツチングマスク用レジスト膜を形成し、こ
のレジスト膜をマスクとして被エツチング膜にエ
ツチングを施して被エツチング膜の微細パターン
を形成する工程がある。
In the manufacturing process of semiconductor integrated circuit devices, etc., a film to be etched, such as a polysilicon film, on which a fine pattern is to be formed by etching is formed on the main surface of a semiconductor substrate, and a light beam is applied onto the surface of this film to be etched. , a sensitive resist that is sensitive to X-rays, electron beams, or ion beams is applied using a spinner method or the like and baked to form a sensitive resist film, and then a fine pattern is formed on the film to be etched of this sensitive resist film. This sensitive resist film is exposed to light and
There is a step in which a resist film for an etching mask is formed by irradiating and developing a beam, an electron beam, or an ion beam, and the film to be etched is etched using this resist film as a mask to form a fine pattern of the film to be etched.
ところで、このような方法では、半導体基板の
主面部に段差がある場合には、この半導体基板の
主面上に形成される被エツチング膜の表面部にも
半導体基板の主面部における段差と同様の段差が
できる。しかし、この段差のある被エツチング膜
の表面上にスピンナ法などで形成される感応性レ
ジスト膜の表面は比較的平坦になるので、この感
応性レジスト膜の被エツチング膜の段差の上面側
の部分の膜厚は段差の下面側の部分の膜厚より薄
くなる。従つて、膜厚の薄い部分と膜厚の厚い部
分とがある感応性レジスト膜によつて微細パター
ンのエツチングマスク用レジスト膜を精度よく形
成することは容易ではないという問題があつた。 By the way, in such a method, if there is a step on the main surface of the semiconductor substrate, the surface of the film to be etched formed on the main surface of the semiconductor substrate also has a step similar to the step on the main surface of the semiconductor substrate. There will be a step. However, since the surface of the sensitive resist film formed by a spinner method or the like on the surface of the film to be etched with the steps is relatively flat, the portion of the sensitive resist film on the upper surface side of the step of the film to be etched is The film thickness is thinner than the film thickness on the lower surface side of the step. Therefore, there has been a problem in that it is not easy to accurately form a resist film for an etching mask with a fine pattern using a sensitive resist film having thin portions and thick portions.
このような問題を解決するために、三層レジス
トプロセスと呼ばれる方法が提案されている。 In order to solve these problems, a method called a three-layer resist process has been proposed.
第１図Ａ〜Ｆは従来の三層レジストプロセスの
一例の主要段階の状態を示す断面図である。 FIGS. 1A to 1F are cross-sectional views showing the main stages of an example of a conventional three-layer resist process.
まず、第１図Ａに示すように、半導体基板１の
主面上に被エツチング膜２を形成したのちに、被
エツチング膜２の表面上にフオトレジストなどの
有機物の塗布液をスピンナ法などで塗布しベーキ
ングして有機膜３を成膜する。次いで、有機膜３
の表面上に酸化シリコン膜などの中間膜４を
CVD法などで形成し、更に、中間膜４の表面上
に光線、Ｘ線、電子ビームまたはイオンビームに
感応する感応性レジストをスピンナ法などで塗布
しベーキングして感応性レジスト膜５を成膜す
る。 First, as shown in FIG. 1A, a film to be etched 2 is formed on the main surface of a semiconductor substrate 1, and then a coating liquid of an organic material such as photoresist is applied onto the surface of the film to be etched 2 using a spinner method or the like. The organic film 3 is formed by coating and baking. Next, organic film 3
An intermediate film 4 such as a silicon oxide film is placed on the surface of the
A sensitive resist film 5 is formed by a CVD method, etc., and then a sensitive resist that is sensitive to light, X-rays, electron beams, or ion beams is applied on the surface of the intermediate film 4 by a spinner method, etc., and then baked to form a sensitive resist film 5. do.
次に、第１図Ｂに示すように、感応性レジスト
膜５の被エツチング膜２の微細パターンを形成す
べき部分に対応する部分が残るように、感応性レ
ジスト膜５に光線、Ｘ線、電子ビームまたはイオ
ンビームを照射し現像して中間膜４の表面上にエ
ツチングマスク用レジスト膜５ａを形成する。 Next, as shown in FIG. 1B, the sensitive resist film 5 is exposed to light, An etching mask resist film 5a is formed on the surface of the intermediate film 4 by irradiation with an electron beam or an ion beam and development.
次に、第１図Ｃに示すように、レジスト膜５ａ
をエツチングマスクとして中間膜４にエツチング
を施してレジスト膜５ａの下に中間膜４ａを残
す。 Next, as shown in FIG. 1C, the resist film 5a
Using this as an etching mask, the intermediate film 4 is etched to leave the intermediate film 4a under the resist film 5a.
次に、第１図Ｄに示すように、レジスト膜５ａ
および中間膜４ａをエツチングマスクとして、有
機膜３に酸素O2のプラズマによる異方性エツチ
ングを施して中間膜４ａの下に有機膜３ａを残
す。 Next, as shown in FIG. 1D, the resist film 5a
Using the intermediate film 4a as an etching mask, the organic film 3 is subjected to anisotropic etching using oxygen O 2 plasma to leave the organic film 3a under the intermediate film 4a.
次に、第１図Ｅに示すように、レジスト膜５
ａ、中間膜４ａおよび有機膜３ａをエツチングマ
スクとして被エツチング膜２にエツチングを施し
て有機膜３ａの下に被エツチング膜２ａを残す。 Next, as shown in FIG. 1E, the resist film 5
a, the film to be etched 2 is etched using the intermediate film 4a and the organic film 3a as an etching mask, leaving the film to be etched 2a under the organic film 3a.
最後に、第１図Ｆに示すように、レジスト膜５
ａ、中間膜４ａおよび有機膜３ａを順次エツチン
グ除去すると、この従来例の三層レジストプロセ
スの作業が完了する。 Finally, as shown in FIG. 1F, the resist film 5
When the intermediate film 4a and the organic film 3a are sequentially etched away, the work of the three-layer resist process of this conventional example is completed.
この従来例の三層レジストプロセスでは、半導
体基板１の主面部に段差があり、被エツチング膜
２の表面部に段差がある場合でも、有機膜３が被
エツチング膜２の表面上にスピンナ法などで成膜
されるので、有機膜３の表面は平坦になる。従つ
て、有機膜３の平坦な表面上に順次形成される中
間膜４および感応性レジスト膜５の表面も平坦に
なり、感応性レジスト膜５の膜厚は均一になるの
で、感応性レジスト膜５によつて微細パターンの
エツチングマスク用レジスト膜５ａを精度よく形
成することができる。そして、レジスト膜５ａの
下に順次形成される中間膜４ａ、有機膜３ａおよ
び被エツチング膜２ａのパターンがレジスト膜５
ａのパターンに対応するパターンになるので、被
エツチング膜２ａのパターンの微細化を図ること
ができる。 In this conventional three-layer resist process, even if there is a step on the main surface of the semiconductor substrate 1 and a step on the surface of the film to be etched 2, the organic film 3 is formed on the surface of the film to be etched 2 using a spinner method or the like. Since the organic film 3 is deposited in this manner, the surface of the organic film 3 becomes flat. Therefore, the surfaces of the intermediate film 4 and the sensitive resist film 5, which are sequentially formed on the flat surface of the organic film 3, also become flat, and the thickness of the sensitive resist film 5 becomes uniform, so that the sensitive resist film 5, the etching mask resist film 5a having a fine pattern can be formed with high precision. Then, the patterns of the intermediate film 4a, organic film 3a, and film to be etched 2a, which are sequentially formed under the resist film 5a, are formed on the resist film 5a.
Since the pattern corresponds to pattern a, the pattern of the film to be etched 2a can be made finer.
しかしながら、この従来例のプロセスでは、工
程数が非常に多いという欠点がある上に、中間膜
４ａの除去が非常に困難であるという欠点もあつ
た。すなわち、中間膜４ａが酸化シリコン
（SiO2）膜またはアルミニウム（Al）膜である場
合が多く、この場合には、中間膜４ａの除去時の
エツチングによつて半導体基板１が損傷された
り、被エツチング膜２ａのパターンが劣化したり
する。 However, this conventional process has the disadvantage that it requires a very large number of steps, and also has the disadvantage that it is very difficult to remove the intermediate film 4a. That is, the intermediate film 4a is often a silicon oxide (SiO 2 ) film or an aluminum (Al) film, and in this case, the semiconductor substrate 1 may be damaged or exposed by etching during removal of the intermediate film 4a. The pattern of the etched film 2a may deteriorate.
この発明は、かかる欠点を除去する目的でなさ
れたもので、半導体基板の主面上に形成された被
エツチング膜の表面上に有機膜、中間膜および感
応性レジスト膜の三層膜を形成し、この三層膜を
用いて被エツチング膜の微細パターンを形成する
方法において、中間膜を被エツチング膜のエツチ
ング時にエツチング除去可能な材質および膜厚に
設定することによつて、被エツチング膜のパター
ンの微細化を図ることができ、しかも半導体基板
の損傷や被エツチング膜のパターンの劣化のおそ
れのない、工程数の少ない微細パターンの形成方
法を提供するものである。
This invention was made with the aim of eliminating such drawbacks, and involves forming a three-layer film of an organic film, an intermediate film, and a sensitive resist film on the surface of a film to be etched formed on the main surface of a semiconductor substrate. In this method of forming a fine pattern on a film to be etched using this three-layer film, the pattern on the film to be etched is formed by setting the material and film thickness of the intermediate film to be such that it can be removed by etching when etching the film to be etched. The present invention provides a method for forming a fine pattern with a small number of steps, which allows for miniaturization of the etching process, eliminates the risk of damage to the semiconductor substrate, or deterioration of the pattern of the film to be etched.
第２図Ａ〜Ｆはこの発明の一実施例の微細パタ
ーンの形成方法の主要段階の状態を示す断面図で
ある。
FIGS. 2A to 2F are cross-sectional views showing the main stages of a method for forming a fine pattern according to an embodiment of the present invention.
まず、第２図Ａに示すように、半導体基板１の
主面上に0.3〜1μm程度の厚さの被エツチング膜
２を形成したのちに、被エツチング膜２の表面上
に感応性レジストとほぼ同一のエツチング速度で
除去可能なポリイミド樹脂などの有機物の塗布液
をスピンナ法などで塗布しベーキングして１〜
3μm程度の厚さの有機膜３を成膜する。次いで、
有機膜３の表面上に中間膜４をプラズマCVD法
または光CVD法で成膜する。この中間膜４とし
ては、被エツチング膜２をエツチングする際にエ
ツチング除去できるようにするために、例えば被
エツチング膜２がポリシリコン膜である場合に
は、ポリシリコン膜またはポリシリコン膜とほぼ
同一のエツチング速度で除去可能なアモルフアス
シリコン膜にし、その膜厚は被エツチング膜２の
膜厚より薄くなるように設定する。しかるのち、
中間膜４の表面上に光線、Ｘ線、電子ビームまた
はイオンビームに感応する感応性レジストをスピ
ンナ法などで塗布しベーキングして有機膜３の厚
さより薄い0.2〜0.4μm程度の厚さの感応性レジス
ト膜５を成膜する。 First, as shown in FIG. 2A, a film to be etched 2 with a thickness of about 0.3 to 1 μm is formed on the main surface of a semiconductor substrate 1, and then a sensitive resist and approximately 100% of the film to be etched are formed on the surface of the film to be etched 2. A coating solution of organic material such as polyimide resin that can be removed at the same etching speed is applied using a spinner method and baked.
An organic film 3 having a thickness of about 3 μm is formed. Then,
An intermediate film 4 is formed on the surface of the organic film 3 by plasma CVD or optical CVD. For example, when the film to be etched 2 is a polysilicon film, the intermediate film 4 is made of a polysilicon film or a film that is almost the same as the polysilicon film so that the film to be etched 2 can be removed by etching. The amorphous silicon film is made to be removable at an etching rate of 1, and its thickness is set to be thinner than that of the film to be etched 2. Afterwards,
A sensitive resist that is sensitive to light, X-rays, electron beams, or ion beams is coated on the surface of the intermediate film 4 using a spinner method, etc., and baked to form a resist with a thickness of about 0.2 to 0.4 μm, which is thinner than the thickness of the organic film 3. A resist film 5 is formed.
次に、第２図Ｂに示すように、感応性レジスト
膜５の被エツチング膜２の微細パターンを形成す
べき部分に対応する部分が残るように、感応性レ
ジスト膜５に光線、Ｘ線、電子ビームまたはイオ
ンビームを照射し現像して中間膜４の表面上にエ
ツチングマスク用レジスト膜５ａを形成する。 Next, as shown in FIG. 2B, the sensitive resist film 5 is exposed to light, An etching mask resist film 5a is formed on the surface of the intermediate film 4 by irradiation with an electron beam or an ion beam and development.
次に、第２図Ｃに示すように、レジスト膜５ａ
をエツチングマスクとして、フレオン115
（C2ClF5）のプラズマによる異方性エツチングを
中間膜４に施してレジスト膜５ａの下にマスク用
中間膜４ａを残す。 Next, as shown in FIG. 2C, the resist film 5a is
Freon 115 as an etching mask
The intermediate film 4 is subjected to anisotropic etching using (C 2 ClF 5 ) plasma to leave the mask intermediate film 4a under the resist film 5a.
次に、第２図Ｄに示すようにマスク用中間膜４
ａをエツチングマスクとして、有機膜３にO2の
プラズマによる異方性エツチングを施してマスク
用中間膜４ａの下にマスク用有機膜３ａを残す。
このとき、レジスト膜５ａの厚さはマスク用有機
膜３ａの厚さより薄いので、レジスト膜５ａはエ
ツチング除去される。 Next, as shown in FIG. 2D, the mask intermediate film 4
Using a as an etching mask, the organic film 3 is anisotropically etched using O 2 plasma to leave the masking organic film 3a under the masking intermediate film 4a.
At this time, since the thickness of the resist film 5a is thinner than the thickness of the mask organic film 3a, the resist film 5a is removed by etching.
次に、第２図Ｅに示すように、マスク用有機膜
３ａをエツチングマスクとして、フレオン115
（C2ClF5）のプラズマによる異方性エツチングを
被エツチング膜２に施してマスク用有機膜３ａの
下に被エツチング膜２ａを残す。このとき、被エ
ツチング膜２がポリシリコン膜である場合には、
マスク用中間膜４ａはポリシリコン膜またはアモ
ルフアスシリコン膜であり、マスク用中間膜４ａ
の膜厚は被エツチング膜２の膜厚より薄いので、
マスク用中間膜４ａはエツチング除去される。 Next, as shown in FIG. 2E, the organic mask film 3a is used as an etching mask, and Freon 115
The film to be etched 2 is subjected to anisotropic etching using plasma of (C 2 ClF 5 ), leaving the film to be etched 2a under the organic film for mask 3a. At this time, if the film to be etched 2 is a polysilicon film,
The mask intermediate film 4a is a polysilicon film or an amorphous silicon film, and the mask intermediate film 4a is a polysilicon film or an amorphous silicon film.
Since the film thickness of is thinner than that of the film to be etched 2,
The mask intermediate film 4a is removed by etching.
最後に、第２図Ｆに示すように、有機膜３ａを
O2のプラズマによるエツチングで除去すると、
この実施例の方法の作業が完了する。 Finally, as shown in FIG. 2F, the organic film 3a is
When removed by etching with O 2 plasma,
The work of the method of this example is complete.
この実施例の方法では、第１図に示した従来例
と同様に、半導体基板１の主面部に段差があり、
被エツチング膜２の表面部に段差がある場合で
も、有機膜３の表面が平坦になり、この有機膜３
の表面上に順次形成される中間膜４および感応性
レジスト膜５の膜厚が均一になるので、この感応
性レジスト膜５によつて微細パターンのエツチン
グマスク用レジスト膜５ａを精度よく形成するこ
とができる。そして、中間膜４ａ、マスク用有機
膜３ａおよび被エツチング膜２ａのパターンがレ
ジスト膜５ａのパターンに対応するパターンにな
るので、被エツチング膜２ａのパターンの微細化
を図ることができる。しかも、マスク用中間膜４
ａが被エツチング膜２とほぼ同一のエツチング速
度で除去可能な材質で構成されており、その上レ
ジスト膜５ａの膜厚がレジスト膜５ａとほぼ同一
のエツチング速度で除去可能なマスク用有機膜３
の膜厚より薄く設定され、マスク用中間膜４ａの
膜厚がマスク用中間膜４ａとほぼ同一のエツチン
グ速度で除去可能な被エツチング膜２の膜厚より
薄く設定されているので、レジスト膜５ａおよび
マスク用中間膜４ａはそれぞれマスク用有機膜３
ａおよび被エツチング膜２ａの形成時のエツチン
グによつて自動的にエツチング除去される。従つ
て、最終段階においてマスク用有機膜３ａのみを
エツチング除去すればよいので、半導体基板１を
損傷させたり、被エツチング膜２ａのパターンを
劣化させたりするおそれがなく、工程数を第１図
に示した従来例の工程数より少なくすることがで
きる。 In the method of this embodiment, there is a step on the main surface of the semiconductor substrate 1, as in the conventional example shown in FIG.
Even if there is a step on the surface of the film to be etched 2, the surface of the organic film 3 becomes flat, and this organic film 3
Since the film thicknesses of the intermediate film 4 and the sensitive resist film 5 which are sequentially formed on the surface of the etching film become uniform, the resist film 5a for an etching mask having a fine pattern can be formed with high precision using the sensitive resist film 5. I can do it. Since the patterns of the intermediate film 4a, the masking organic film 3a, and the film to be etched 2a correspond to the pattern of the resist film 5a, the pattern of the film to be etched 2a can be made finer. Moreover, the mask interlayer film 4
a is made of a material that can be removed at approximately the same etching speed as the film to be etched 2, and the resist film 5a has a thickness that can be removed at approximately the same etching speed as the resist film 5a.
Since the film thickness of the mask intermediate film 4a is set to be thinner than the film thickness of the film to be etched 2, which can be removed at approximately the same etching speed as the mask intermediate film 4a, the resist film 5a and the interlayer film 4a for a mask are the organic film 3 for a mask, respectively.
a and the film to be etched 2a are automatically etched away. Therefore, in the final step, only the masking organic film 3a needs to be removed by etching, so there is no risk of damaging the semiconductor substrate 1 or deteriorating the pattern of the film to be etched 2a, and the number of steps can be reduced to that shown in FIG. The number of steps can be smaller than that of the conventional example shown.
この実施例において、感応性レジスト膜５、中
間膜４および有機膜３のいずれか一つまたは全部
に感応性レジスト膜５を感応させる光線、Ｘ線、
電子ビームまたはイオンビームを吸収可能な色素
などの添加物を混入または化合させて、半導体基
板１からの光線もしくはＸ線の反射または電子ビ
ームもしくはイオンビームの後方散乱による悪影
響を減らすようにしてもよい。 In this embodiment, light rays, X-rays, or
Additives such as dyes capable of absorbing electron beams or ion beams may be mixed or combined to reduce the negative effects of reflection of light or X-rays from the semiconductor substrate 1 or backscattering of the electron beam or ion beam. .
なお、この実施例では、被エツチング膜２がポ
リシリコン膜である場合を例示したが、この発明
はこれに限らず、有機膜３に対するエツチングと
は異なるエツチングによつて除去し得るAl膜、
SiO2膜などのその他の被膜である場合にも適用
することができる。 In this embodiment, the case where the film to be etched 2 is a polysilicon film is exemplified, but the present invention is not limited to this, and the present invention is not limited to this.
It can also be applied to other films such as SiO 2 film.
また、この実施例では、有機膜３のエツチング
にO2のプラズマを用いたが、必ずしもこれはO2
のプラズマである必要がなく、O2とCF4、CCl4な
どのハロゲン化合物との混合ガスのプラズマを用
いてもよく、この場合には有機膜３に対するエツ
チング速度を大きくすることができる。 Further, in this embodiment, O 2 plasma was used for etching the organic film 3, but this is not necessarily the case.
It is not necessary to use plasma of a mixed gas of O 2 and a halogen compound such as CF 4 or CCl 4 , and in this case, the etching rate of the organic film 3 can be increased.
この実施例では、レジスト膜５ａが有機膜３へ
のエツチング時にエツチング除去されるようにし
たが、必ずしも有機膜３へのエツチング時にエツ
チング除去されるようにする必要はない。 In this embodiment, the resist film 5a is etched away when the organic film 3 is etched, but it is not necessarily necessary to be etched away when the organic film 3 is etched.
〔発明の効果〕
以上、説明したように、この発明の微細パター
ンの形成方法においては、半導体基板の主面上に
形成された被エツチング膜の表面上に有機膜、中
間膜および感応性レジスト膜の三層膜を形成し、
この三層膜を用いて被エツチング膜の微細パター
ンを形成するので、半導体基板の主面部に段差が
あり、被エツチング膜の表面部に段差がある場合
でも、有機膜の表面が平坦になり、この有機膜の
表面上に順次形成される中間膜および感応性レジ
スト膜の膜厚が均一になる。従つて、この感応性
レジスト膜によつて微細パターンのエツチングマ
スク用レジスト膜を精度よく形成することができ
るので、このエツチングマスク用レジスト膜のパ
ターンをエツチングによつて順次下層に転写して
最終的に形成される被エツチング膜のパターンの
微細化を図ることができる。しかも、中間膜を被
エツチング膜のエツチング時にエツチング除去可
能な材質および膜厚に設定するので、中間膜がエ
ツチングマスク用レジスト膜のパターンの被エツ
チング膜への転写時のエツチングによつて自動的
に除去されるので、被エツチング膜に接している
下部層、例えば半導体基板の表面の損傷や被エツ
チング膜のパターンの劣化のおそれが少なくな
り、工程数を従来例の工程数より少なくすること
ができる。[Effects of the Invention] As explained above, in the method for forming a fine pattern of the present invention, an organic film, an intermediate film, and a sensitive resist film are formed on the surface of a film to be etched formed on the main surface of a semiconductor substrate. Forms a three-layer film of
Since this three-layer film is used to form a fine pattern on the film to be etched, even if there is a step on the main surface of the semiconductor substrate and a step on the surface of the film to be etched, the surface of the organic film will be flat. The thickness of the intermediate film and the sensitive resist film, which are sequentially formed on the surface of this organic film, becomes uniform. Therefore, a resist film for an etching mask with a fine pattern can be formed with high precision using this sensitive resist film, and the pattern of this resist film for an etching mask can be sequentially transferred to the lower layer by etching to form the final etching mask. The pattern of the film to be etched formed can be made finer. Moreover, since the material and thickness of the intermediate film are set to be such that it can be removed by etching when etching the film to be etched, the intermediate film is automatically etched when the pattern of the resist film for the etching mask is transferred to the film to be etched. Since it is removed, there is less risk of damage to the surface of the lower layer in contact with the film to be etched, such as the surface of the semiconductor substrate, or deterioration of the pattern of the film to be etched, and the number of steps can be reduced compared to the conventional method. .
第１図は従来の三層レジストプロセスの一例の
主要段階の状態を順次示す断面図、第２図はこの
発明の一実施例の微細パターンの形成方法の主要
段階の状態を順次示す断面図である。
図において、１は半導体基板、２および２ａは
被エツチング膜、３および３ａは有機膜、４およ
び４ａは中間膜、５は感応性レジスト膜、５ａは
エツチングマスク用レジスト膜である。なお、図
中同一符号はそれぞれ同一または相当部分を示
す。
FIG. 1 is a cross-sectional view sequentially showing the main stages of an example of a conventional three-layer resist process, and FIG. 2 is a cross-sectional view sequentially showing the main stages of a fine pattern forming method according to an embodiment of the present invention. be. In the figure, 1 is a semiconductor substrate, 2 and 2a are films to be etched, 3 and 3a are organic films, 4 and 4a are intermediate films, 5 is a sensitive resist film, and 5a is a resist film for an etching mask. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
グ膜の表面上に順次有機膜、上記被エツチング膜
のエツチング時にエツチング除去可能な材質及び
膜厚に設定された中間膜および感応性レジスト膜
を形成する工程、 上記感応性レジスト膜の上記被エツチング膜の
微細パターンを形成すべき部分上の部分が残るよ
うに上記感応性レジスト膜を感応させ現像してエ
ツチングマスク用レジスト膜を形成する工程、 このエツチングマスク用レジスト膜のパターン
をマスクとして上記中間膜をエツチングによつて
マスク用中間膜を形成する工程、 このマスク用中間膜をマスクとして上記有機膜
をエツチングによつてマスク用有機膜を形成する
工程、 このマスク用有機膜をマスクとして上記被エツ
チング膜をエツチングによつて除去し被エツチン
グ膜の微細パターンを形成すると同時に、上記マ
スク用中間膜を除去する工程、 上記マスク用有機膜をエツチングによつて除去
する工程を備えた微細パターンの形成方法。 ２ 感応性レジスト膜を感応させる光線、Ｘ線、
電子ビームまたはイオンビームを吸収可能な添加
物が混入または化合された中間膜を用いることを
特徴とする特許請求の範囲第１項記載の微細パタ
ーンの形成方法。 ３ 感応性レジスト膜を感応させる光線、Ｘ線、
電子ビームまたはイオンビームを吸収可能な添加
物が混入または化合された有機膜を用いることを
特徴とする特許請求の範囲第１項または第２項記
載の微細パターンの形成方法。 ４ 感応性レジスト膜を感応させる光線、Ｘ線、
電子ビームまたはイオンビームを吸収可能な添加
物が混入または化合された感応性レジスト膜を用
いることを特徴とする特許請求の範囲第１項ない
し第３項のいずれかに記載の微細パターンの形成
方法。[Scope of Claims] 1. An organic film is sequentially formed on the surface of a film to be etched formed on the main surface of a semiconductor substrate, an intermediate film made of a material and having a film thickness that can be removed by etching during etching of the film to be etched, and forming a sensitive resist film, sensitizing and developing the sensitive resist film so that a portion of the sensitive resist film on the portion of the film to be etched on which a fine pattern is to be formed remains, and forming a resist film for an etching mask; A step of forming an intermediate film for a mask by etching the intermediate film using the pattern of the resist film for an etching mask as a mask. A step of etching the organic film using the intermediate film for a mask as a mask. a step of forming an organic film for etching, a step of removing the film to be etched by etching using the organic film for a mask as a mask to form a fine pattern of the film to be etched, and simultaneously removing the intermediate film for the mask; A method for forming a fine pattern, which includes a step of removing an organic film by etching. 2. Light rays, X-rays, which sensitize the sensitive resist film.
The method for forming a fine pattern according to claim 1, characterized in that an intermediate film mixed with or combined with an additive capable of absorbing an electron beam or an ion beam is used. 3. Light rays, X-rays, which sensitize the sensitive resist film.
3. The method for forming a fine pattern according to claim 1, wherein an organic film mixed with or combined with an additive capable of absorbing an electron beam or an ion beam is used. 4 Light rays, X-rays, which sensitize the sensitive resist film,
A method for forming a fine pattern according to any one of claims 1 to 3, characterized in that a sensitive resist film mixed with or combined with an additive capable of absorbing an electron beam or an ion beam is used. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151947A JPS6043827A (en) | 1983-08-20 | 1983-08-20 | Formation of fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151947A JPS6043827A (en) | 1983-08-20 | 1983-08-20 | Formation of fine pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6043827A JPS6043827A (en) | 1985-03-08 |
| JPH0458167B2 true JPH0458167B2 (en) | 1992-09-16 |
Family
ID=15529679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58151947A Granted JPS6043827A (en) | 1983-08-20 | 1983-08-20 | Formation of fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043827A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61248039A (en) * | 1985-04-26 | 1986-11-05 | Hitachi Ltd | Pattern forming method |
| JPS6316623A (en) * | 1986-07-08 | 1988-01-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0754210B2 (en) * | 1987-05-06 | 1995-06-07 | 三洋電機株式会社 | Absorption chiller / heater plate type heat exchanger |
| JP2691175B2 (en) * | 1989-09-08 | 1997-12-17 | 日本電信電話株式会社 | Patterned oxide superconducting film formation method |
| JPH03235380A (en) * | 1990-02-13 | 1991-10-21 | Sumitomo Cement Co Ltd | Formation of thin superconducting film pattern |
| US5126231A (en) * | 1990-02-26 | 1992-06-30 | Applied Materials, Inc. | Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch |
| JP4496631B2 (en) * | 2000-09-27 | 2010-07-07 | 富士通株式会社 | Manufacturing method of electronic device |
-
1983
- 1983-08-20 JP JP58151947A patent/JPS6043827A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6043827A (en) | 1985-03-08 |
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