JPS57111030A - Passivation film - Google Patents

Passivation film

Info

Publication number
JPS57111030A
JPS57111030A JP55185120A JP18512080A JPS57111030A JP S57111030 A JPS57111030 A JP S57111030A JP 55185120 A JP55185120 A JP 55185120A JP 18512080 A JP18512080 A JP 18512080A JP S57111030 A JPS57111030 A JP S57111030A
Authority
JP
Japan
Prior art keywords
film
shaped
resin layer
passivation film
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55185120A
Other languages
Japanese (ja)
Inventor
Niwaji Majima
Shiro Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55185120A priority Critical patent/JPS57111030A/en
Publication of JPS57111030A publication Critical patent/JPS57111030A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To shape the passivation film having high reliability in a short time at low cost by forming the passivation film such as a magnetic bubble memory by two layers consisting of a resin layer and an inorganic substance layer on the resin layer. CONSTITUTION:In the magnetic bubble memory element, a SiO2 film 5 is formed onto an yttrium-samarium-iron-garnet film manufactured through a liquid-phase epitaxial method, a bubble medium 4, and the contact patterns of the copper- aluminum films 6 are shaped. A SiO2 film 8 is evaporated, a resist is removed, a SiO2 film 7 is shaped, and a permalloy pattern film 1 for driving bubbles is molded. Polyladder type organosiloxane is applied, the resin layer 2 is formed, and SiO23 is shaped.
JP55185120A 1980-12-27 1980-12-27 Passivation film Pending JPS57111030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55185120A JPS57111030A (en) 1980-12-27 1980-12-27 Passivation film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55185120A JPS57111030A (en) 1980-12-27 1980-12-27 Passivation film

Publications (1)

Publication Number Publication Date
JPS57111030A true JPS57111030A (en) 1982-07-10

Family

ID=16165209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55185120A Pending JPS57111030A (en) 1980-12-27 1980-12-27 Passivation film

Country Status (1)

Country Link
JP (1) JPS57111030A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291129A (en) * 1989-04-28 1990-11-30 Nec Corp Semiconductor device
WO2003003385A2 (en) * 2001-06-26 2003-01-09 Johns Hopkins University Magnetic devices comprising magnetic meta-materials
CN115094404A (en) * 2022-06-10 2022-09-23 广州和力表面处理技术有限公司 Preparation and application of battery aluminum foil chromium-free passivator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522865A (en) * 1978-08-07 1980-02-18 Nec Corp Manufacturing methof of semiconductor device
JPS55133538A (en) * 1979-04-05 1980-10-17 Nec Corp Manufacturing method of semiconductor device
JPS55145355A (en) * 1979-05-01 1980-11-12 Hitachi Ltd Semiconductor device and fabrication of the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522865A (en) * 1978-08-07 1980-02-18 Nec Corp Manufacturing methof of semiconductor device
JPS55133538A (en) * 1979-04-05 1980-10-17 Nec Corp Manufacturing method of semiconductor device
JPS55145355A (en) * 1979-05-01 1980-11-12 Hitachi Ltd Semiconductor device and fabrication of the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291129A (en) * 1989-04-28 1990-11-30 Nec Corp Semiconductor device
WO2003003385A2 (en) * 2001-06-26 2003-01-09 Johns Hopkins University Magnetic devices comprising magnetic meta-materials
WO2003003385A3 (en) * 2001-06-26 2003-10-02 Univ Johns Hopkins Magnetic devices comprising magnetic meta-materials
CN115094404A (en) * 2022-06-10 2022-09-23 广州和力表面处理技术有限公司 Preparation and application of battery aluminum foil chromium-free passivator

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