JPS57111030A - Passivation film - Google Patents
Passivation filmInfo
- Publication number
- JPS57111030A JPS57111030A JP55185120A JP18512080A JPS57111030A JP S57111030 A JPS57111030 A JP S57111030A JP 55185120 A JP55185120 A JP 55185120A JP 18512080 A JP18512080 A JP 18512080A JP S57111030 A JPS57111030 A JP S57111030A
- Authority
- JP
- Japan
- Prior art keywords
- film
- shaped
- resin layer
- passivation film
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 abstract 1
- 239000002223 garnet Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 125000005375 organosiloxane group Chemical group 0.000 abstract 1
- 229910000889 permalloy Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To shape the passivation film having high reliability in a short time at low cost by forming the passivation film such as a magnetic bubble memory by two layers consisting of a resin layer and an inorganic substance layer on the resin layer. CONSTITUTION:In the magnetic bubble memory element, a SiO2 film 5 is formed onto an yttrium-samarium-iron-garnet film manufactured through a liquid-phase epitaxial method, a bubble medium 4, and the contact patterns of the copper- aluminum films 6 are shaped. A SiO2 film 8 is evaporated, a resist is removed, a SiO2 film 7 is shaped, and a permalloy pattern film 1 for driving bubbles is molded. Polyladder type organosiloxane is applied, the resin layer 2 is formed, and SiO23 is shaped.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55185120A JPS57111030A (en) | 1980-12-27 | 1980-12-27 | Passivation film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55185120A JPS57111030A (en) | 1980-12-27 | 1980-12-27 | Passivation film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57111030A true JPS57111030A (en) | 1982-07-10 |
Family
ID=16165209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55185120A Pending JPS57111030A (en) | 1980-12-27 | 1980-12-27 | Passivation film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57111030A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02291129A (en) * | 1989-04-28 | 1990-11-30 | Nec Corp | Semiconductor device |
WO2003003385A2 (en) * | 2001-06-26 | 2003-01-09 | Johns Hopkins University | Magnetic devices comprising magnetic meta-materials |
CN115094404A (en) * | 2022-06-10 | 2022-09-23 | 广州和力表面处理技术有限公司 | Preparation and application of battery aluminum foil chromium-free passivator |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522865A (en) * | 1978-08-07 | 1980-02-18 | Nec Corp | Manufacturing methof of semiconductor device |
JPS55133538A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Manufacturing method of semiconductor device |
JPS55145355A (en) * | 1979-05-01 | 1980-11-12 | Hitachi Ltd | Semiconductor device and fabrication of the same |
-
1980
- 1980-12-27 JP JP55185120A patent/JPS57111030A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5522865A (en) * | 1978-08-07 | 1980-02-18 | Nec Corp | Manufacturing methof of semiconductor device |
JPS55133538A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Manufacturing method of semiconductor device |
JPS55145355A (en) * | 1979-05-01 | 1980-11-12 | Hitachi Ltd | Semiconductor device and fabrication of the same |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02291129A (en) * | 1989-04-28 | 1990-11-30 | Nec Corp | Semiconductor device |
WO2003003385A2 (en) * | 2001-06-26 | 2003-01-09 | Johns Hopkins University | Magnetic devices comprising magnetic meta-materials |
WO2003003385A3 (en) * | 2001-06-26 | 2003-10-02 | Univ Johns Hopkins | Magnetic devices comprising magnetic meta-materials |
CN115094404A (en) * | 2022-06-10 | 2022-09-23 | 广州和力表面处理技术有限公司 | Preparation and application of battery aluminum foil chromium-free passivator |
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