JPS5755585A - Reproduction of magnetic bubble memory element - Google Patents
Reproduction of magnetic bubble memory elementInfo
- Publication number
- JPS5755585A JPS5755585A JP13008080A JP13008080A JPS5755585A JP S5755585 A JPS5755585 A JP S5755585A JP 13008080 A JP13008080 A JP 13008080A JP 13008080 A JP13008080 A JP 13008080A JP S5755585 A JPS5755585 A JP S5755585A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- memory element
- bubble memory
- magnetic bubble
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
PURPOSE:To avoid an increase of the coercive force of a permalloy pattern, by putting an intermediate layer made of a metal that is easily oxidized between an insulated layer of a magnetic bubble memory element and a permalloy thin film when the heat-resistant resin is used to an insulated layer of the magnetic bubble memory element. CONSTITUTION:A magnetic thin film 12 is formed on a nonmagnetic substrate 11, and a conductor pattern 14 is formed on the film 12 via an insulated layer 13. Furthermore another insulated layer 15 is formed with the heat-resistant resin, and a permalloy pattern 17. In this case, an intermediate layer 16 is formed with a metal such as Al, Ta, etc. that is easily oxidized between the resin 15 and the pattern 17. As a result, the diffusion of carbon that shifts from the layer 15 to the pattern 17 can be prevented by the layer 16.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13008080A JPS5856187B2 (en) | 1980-09-20 | 1980-09-20 | Method for manufacturing magnetic bubble memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13008080A JPS5856187B2 (en) | 1980-09-20 | 1980-09-20 | Method for manufacturing magnetic bubble memory element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5755585A true JPS5755585A (en) | 1982-04-02 |
JPS5856187B2 JPS5856187B2 (en) | 1983-12-13 |
Family
ID=15025503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13008080A Expired JPS5856187B2 (en) | 1980-09-20 | 1980-09-20 | Method for manufacturing magnetic bubble memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5856187B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121682A (en) * | 1982-12-28 | 1984-07-13 | Fujitsu Ltd | Bubble memory element |
KR101064326B1 (en) | 2009-10-29 | 2011-09-14 | 고려대학교 산학협력단 | Electronic device and fabrication method the devices |
-
1980
- 1980-09-20 JP JP13008080A patent/JPS5856187B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121682A (en) * | 1982-12-28 | 1984-07-13 | Fujitsu Ltd | Bubble memory element |
JPS6245629B2 (en) * | 1982-12-28 | 1987-09-28 | Fujitsu Ltd | |
KR101064326B1 (en) | 2009-10-29 | 2011-09-14 | 고려대학교 산학협력단 | Electronic device and fabrication method the devices |
Also Published As
Publication number | Publication date |
---|---|
JPS5856187B2 (en) | 1983-12-13 |
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