JPS58147027A - Preparation apparatus for semiconductor device - Google Patents

Preparation apparatus for semiconductor device

Info

Publication number
JPS58147027A
JPS58147027A JP3077182A JP3077182A JPS58147027A JP S58147027 A JPS58147027 A JP S58147027A JP 3077182 A JP3077182 A JP 3077182A JP 3077182 A JP3077182 A JP 3077182A JP S58147027 A JPS58147027 A JP S58147027A
Authority
JP
Japan
Prior art keywords
end plate
reaction tube
seal
operating rod
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3077182A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
利夫 田中
Toshio Sogo
十河 敏雄
Saburo Takamiya
高宮 三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3077182A priority Critical patent/JPS58147027A/en
Publication of JPS58147027A publication Critical patent/JPS58147027A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To smoothly move an operation rod without air leak by using a seal of the accordion type to the part for pulling a content operating rod from the reaction tube. CONSTITUTION:Before a boat is inserted into a furnace 1, an accordion seal 18 consisting of a material which does not give any effect on liquid phase growth such as a stainless steel, rubber etc. is contracted 23. After a furnace is heated, a rod 8 is moved to the left, the boat is inserted into the furnace by contracting the seal 18, then a fused liquid pot is moved by extending the seal 23 moving the rod 9 to the right. Thereby, the N type and P type fused liquids 6, 7 are placed in contact with a substrate 4, sequentially. After liquid phae growth, the seal 18 is extended moving the rod to the right 8 and the boat can be pulled. According to this structure, when an apparatus is once set, the air does not leak into the quartz reaction tube 2 even while the quartz rods 8, 9 are moving and the rod moves smoothly since there is no sliding portion and thereby a motor can also be driven.

Description

【発明の詳細な説明】 本発明は半導体製−装置に係り、特に外気とのシールを
保・ち、かつ自在に移動するに好適壜構成を有する半導
体製造装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor manufacturing equipment, and more particularly to semiconductor manufacturing equipment having a bottle structure suitable for maintaining a seal with the outside air and being freely movable.

従来、外界とのシールを保ちつつ移動する部分を持つ半
導体製造装置においては、上記シール部分にウィルソン
シール等、運動用II □ 11リングを使用する方法
がとられていた。
Conventionally, in semiconductor manufacturing equipment having a part that moves while maintaining a seal with the outside world, a method has been adopted in which a moving II □ 11 ring, such as a Wilson seal, is used for the seal part.

第1図は半導体製造装置の内、特にGaAaの液相成長
装置を例にとシ、上記従来のシール方法を用いた装置の
一例を示す模式断面図で、第2図A〜Dは上記従来のシ
ール部分の動きを、液相成長工程順に示したものである
。図中、(1)は電気炉、(2)は石英反応管、(3)
は液相成長用ボートのスライダー、(4)は上記スライ
ダー(8)に設定されたGaAa基板、(5)は液相成
長用ボートの融液溜め、(6)及び(7)はそれぞれ上
記融液溜め(5)に収容されたn形及□ ; びp形用Ga−I+融液、(8〕は上記スライダー(3
)にひっかけられた石英製のボート操作棒、(9)は融
液溜め(5)にひっかけられた石英製の融液溜め操作棒
、(6)は石英反応管(2)とボート操作棒(8)との
間を接続し、しかも外界とのシールを保つためのウィル
ソンシール% (11)及び(l乃はウィルソンシール
(イ)内の運動用II□11 リングで、それぞれ石英
反応管(2)と外界とのシール部、及びボート操作棒(
8)と外界とのシールを保ちつつボート操作棒を図中左
右に摺動可能なシール部を構成する。01はボート操作
棒(8)と融液溜め操作棒(9)との間を接続し、しか
も外界とのシールを保つためのウィルソンシール、(1
4及ヒ(1〜はウィルソンシールQ1内の運動用II□
II yンクテ、それぞれボート操作棒(8)と外界と
のシール部、及び融液溜め操作棒(9)と外界とのシー
ルを保ちつつ融液溜め操作棒(9)を図中左右に摺動可
能なシール部を構成する。また、(l呻は石英反応管(
2)内の液相成長雰囲気に超高純度の水素ガスを導入す
るためのガス導入口、Q7)は上記水素ガス出口である
FIG. 1 is a schematic cross-sectional view showing an example of semiconductor manufacturing equipment, particularly a GaAa liquid phase growth equipment, which uses the above-mentioned conventional sealing method. The movement of the seal part is shown in the order of the liquid phase growth process. In the figure, (1) is an electric furnace, (2) is a quartz reaction tube, (3)
is the slider of the liquid-phase growth boat, (4) is the GaAa substrate set on the slider (8), (5) is the melt reservoir of the liquid-phase growth boat, and (6) and (7) are the respective melts. The Ga-I+ melt for n-type and □; and p-type stored in the liquid reservoir (5), (8) is
), (9) is a quartz melt reservoir operation rod that is hooked on melt reservoir (5), (6) is a quartz reaction tube (2) and boat operation rod ( Wilson seal (11) and (1) are the movement II□11 rings in the Wilson seal (A) to connect the quartz reaction tube (2 ) and the outside world, and the boat operating rod (
8) constitutes a seal portion that allows the boat operating rod to slide left and right in the figure while maintaining a seal between the boat and the outside world. 01 is a Wilson seal (1) that connects the boat operating rod (8) and the melt reservoir operating rod (9) and maintains a seal from the outside world.
4 and H (1~ is for exercise II□ in Wilson Seal Q1
Slide the melt reservoir operating rod (9) from side to side in the figure while maintaining the seal between the boat operating rod (8) and the outside world, and the seal between the melt reservoir operating rod (9) and the outside world, respectively. Construct a possible seal part. In addition, (l groan is a quartz reaction tube (
The gas inlet Q7) for introducing ultra-high purity hydrogen gas into the liquid phase growth atmosphere in 2) is the hydrogen gas outlet.

次に、上記従来のシール方法を有する上記従来の液相成
長装置に依り、GaAa基板(4)上にn形GaAs層
及びp形GaAs層を連続的にエピタキシャル成長り させる方法を各工程順に示すJii2図A−鴬について
説明する。j112図Aは、ボートを電気炉(1)へ挿
入する前の状態でアシ、ウィルソンシール斡及びu場内
(DJ動用”O” リフ /(11) j (I2Jl
 (lljヒ(16) テシールされている。第2図B
はボートを約800”Cに昇温された電気炉(1)内に
挿入された状態であシ、ウィルソンシールαQの運動用
+IQI+ リング(If4゛を少しゆルメタ状−でボ
ート操作棒(8)を摺動させることによシ行なう。jg
2図Cはエピタキシャル成長中の状態でメジ、ウィルソ
ンシール贈の運動用11olIす・ング(16)を少し
ゆるめた状態で融g溜め操作棒(9)f摺動させ、Ga
A3基板(4)上にn形GA−As融液(6)及びp形
G5L−AB m液(7)を順次接触させて行なう。第
2図DtJ成長が終了した状態でるり、ウィルソンシー
ルQQの運動用II□II Uング(I@を少しゆるめ
て、上記82図Bの時と逆の方向に指動させて行なう。
Next, a method for epitaxially growing an n-type GaAs layer and a p-type GaAs layer continuously on a GaAA substrate (4) using the conventional liquid phase growth apparatus having the conventional sealing method will be described in order of each step in Jii2. Figure A - Tsumugi will be explained. j112 Diagram A shows the reeds, the Wilson seal box, and the inside of the U venue (DJ operation "O" riff / (11) j (I2Jl) before inserting the boat into the electric furnace (1).
(lljhi (16) Tessealed. Figure 2B
The boat was inserted into the electric furnace (1) heated to about 800"C, and the Wilson Seal αQ movement +IQI+ ring (If4) was connected to the boat operating rod (8 ) by sliding it.jg
Figure 2C shows that during epitaxial growth, the molten g reservoir operating rod (9) f is slid with the motor 11 oIl ring (16) provided by Wilson Seal slightly loosened.
This is carried out by sequentially contacting the n-type GA-As melt (6) and the p-type G5L-AB m liquid (7) on the A3 substrate (4). Figure 2: With DtJ growth completed, move the Wilson Seal QQ by slightly loosening the II□II Ung (I@) and moving it in the opposite direction to that shown in Figure 82B above.

しかしながら上述の液相成長を上記従来のシール方法で
行なった揚合、しばしば石英反応管(2)内に空気がリ
ークするといった問題がめった。すなわち、上記運動用
+IQII リングa@、 araをしめすぎると石英
操作棒(8J 、 (9)が摺動しに<<、ゆるめすぎ
るとその部分からリークする。また石英操作棒にわずか
な凹凸やキズがあるとIIQII !Jングとの接触が
悪くなってリークしたり、さらにII□I+リング内に
石英操作棒を何度も摺動しているうちにII□11リン
グが摩耗して、リークしたりしていた。
However, when the above-mentioned liquid phase growth was carried out using the above-mentioned conventional sealing method, problems often occurred, such as air leaking into the quartz reaction tube (2). In other words, if the exercise +IQII rings a@, ara are tightened too much, the quartz operating rod (8J, (9)) will not slide, and if they are loosened too much, leaks will occur from that area. If there are any scratches, the contact with the IIQII!J ring will deteriorate and leaks may occur, and if the quartz operating rod is slid inside the II□I+ ring over and over again, the II□11 ring may wear out and leaks may occur. I was doing things like that.

上記液相成長装置に限らず、半導体製造装置におけるこ
のようなリークは、半導体材料や半導体製造治具等を酸
化石せ、素子性能を悪化させる原因となる。
Such leakage not only in the above-mentioned liquid phase growth apparatus but also in semiconductor manufacturing equipment causes oxidation of semiconductor materials, semiconductor manufacturing jigs, etc., and deteriorates device performance.

以上述べたように、上記従来のシール方法では、運動用
“IQII リング部のリークを皆無にする事はむつか
しく、シかも石英製操作棒をモーター駆動して機械的に
移動させる事など不可能に近かった。
As mentioned above, with the conventional sealing method described above, it is difficult to completely eliminate leakage from the dynamic IQII ring, and it is impossible to mechanically move the quartz operating rod by driving a motor. It was close.

半導体製造装置における上記シール部分が素子特性の再
現性の向上1子性能の向上、装置の自動化等へ−の大き
な障害となっていた。
The above-mentioned seal portion in semiconductor manufacturing equipment has been a major obstacle to improving the reproducibility of device characteristics, improving single-chip performance, and automating the equipment.

本麩明は上述のような欠点に鑑みてなされたものであっ
て、特に外気とのシールを保ち、かつ自在に移動可能な
シール方法を用いた半導体製造装置を提供することを目
的とするものでるる。
The present invention was developed in view of the above-mentioned drawbacks, and the purpose of the present invention is to provide a semiconductor manufacturing equipment using a sealing method that maintains a seal with the outside air and is movable freely. Out.

以下、本発明を第3図および菖4図に示す実施例につい
て詳細に説明する。第3〜はこの発明の一実施例になる
液相成長装置の構成を示す模式断面図で、舖はこの1明
の要点をなすボート移動用アコーデオンシールでToシ
、ステンレス鋼薄板。
Hereinafter, the present invention will be described in detail with reference to the embodiments shown in FIGS. 3 and 4. The third to third figures are schematic sectional views showing the structure of a liquid phase growth apparatus according to an embodiment of the present invention, and an accordion seal for moving a boat, which is the main point of this invention, is made of a thin stainless steel plate.

テフロン、ゴム、t!r化ビエビニール等液相成長影響
を及はさない材質で、アコーディオン状に伸縮自在なシ
ールである。(IIは石英反応管(2)の一端が封着さ
れるポート移動用アコーディオンシール輌の一方の端板
で固定台−に固定されている0@はボート移動用アコー
ディオンシールHの他方の端板で、石英製ボート操作棒
が封着されるとともに固定台−の上を移動可能なjll
の移動台(2)に搭載されている。(2)は一方の端板
(2)をボート移動用−アコ−ブイオンシール幡と共用
し、他方の端板(ハ)に石英製融液溜め操作棒(9)が
固着された融液溜め移動用アコーディオンシールである
。上記他方の端板(財)には水素ガス出口(+7)が設
けられておシ、この端板■は上記第1の移動台に)の上
を移動可能な菖2の移動台に)に塔載されているo $
11の移動台に)および第2の移動台に)はモータ駆動
されそれぞれボート操作棒(8)および融液溜め操作棒
(9)を駆動する0 、!I4図A −Dはこの実施例装置の操作状態をその
工程順に示す模式断面図である。第4図Aはボートを電
気炉(1)内へ挿入する前の状態を示し、ボート移動用
アコーディオンシールHは伸びた状態で固定されておシ
、融液溜め移動用アコーディオンシール(ホ)は縮めた
状態で固定されている。第4図Bはボートを約800℃
に昇温された電気炉(1)内に挿入した状態でsb、伸
びてい良状態のボート移動用アコーディオンシール幀を
縮めて、ボート操作棒(8)を図中右側に移動すること
により行なう。
Teflon, rubber, t! The seal is made of a material that does not affect liquid phase growth, such as R-vinyl vinyl, and can be expanded and contracted like an accordion. (II is one end plate of the accordion seal vehicle for port movement to which one end of the quartz reaction tube (2) is sealed; 0@ is the other end plate of the accordion seal H for port movement, which is fixed to the fixed base. The quartz boat operating rod is sealed and the jll is movable on a fixed base.
It is mounted on the mobile platform (2). (2) is a melt reservoir whose one end plate (2) is shared with an Accove ion seal flag for boat movement, and a quartz melt reservoir operating rod (9) is fixed to the other end plate (c). This is a moving accordion sticker. The other end plate above is provided with a hydrogen gas outlet (+7). The tower is listed o $
11) and the second moving table) are motor-driven and drive the boat operating rod (8) and the melt reservoir operating rod (9), respectively. FIGS. 14A to 14D are schematic cross-sectional views showing the operating state of this embodiment device in the order of its steps. Fig. 4A shows the state before the boat is inserted into the electric furnace (1), in which the accordion seal H for moving the boat is fixed in an extended state, and the accordion seal (E) for moving the melt reservoir is fixed. It is fixed in the retracted position. Figure 4 B shows the boat at about 800℃.
This is done by contracting the accordion seal sb for moving the boat, which is in good condition, while inserted into the electric furnace (1), which has been heated to sb, and moving the boat operating rod (8) to the right in the figure.

第4図Cはエピタキシャル成長中の状態であり、縮めた
状態であった融液溜め移動用アコーディオンシールに)
を伸ばして融液溜め操作棒(9)を図中右側に移動する
ことにより、GaAs基板(4ン上にn形Ga−As融
液(6)及び″′p形Ga−As融液(7)を順次接触
させて行なう。第4図りは成長が終了した状態であり、
縮めた状態であったボート移動用アコーディオンシール
01を伸ばすことにょシ、ボート操作棒(8)を図中右
側に移動して行なう。
Figure 4C shows the state during epitaxial growth, and the accordion seal for moving the melt reservoir was in a contracted state)
By extending the melt reservoir operating rod (9) to the right side in the figure, the n-type Ga-As melt (6) and the p-type Ga-As melt (7) are placed on the GaAs substrate (4). ) are sequentially brought into contact with each other.
To extend the boat moving accordion seal 01 which was in the contracted state, move the boat operating rod (8) to the right side in the figure.

上述のように、この実施例装置ではアコーディオンシー
ルを用い IIQII リングの摺動を使用しないので
、装置を一度設定すれば、石英製操作棒(8)。
As mentioned above, this example device uses an accordion seal and does not use sliding rings, so once the device is set up, the quartz operating rod (8).

(9)の移動時においても石英゛反応管(2)内への空
気のリークは全くない。また、摺動部分がないので、移
動が非常にスムーズである。
Even during the movement of (9), there is no leakage of air into the quartz reaction tube (2). Also, since there are no sliding parts, movement is very smooth.

なお上述した実施例においては、半導体製造装置の内、
特にGaAa液相成長に使用した場合にっ°いて述べた
が、本発明はこれのみに溜まらず、例えばCVD装置、
拡散装置2合金装置など、高純度雰囲気を保ち、外気と
のシールを保持した状態で内容物を移動操作することを
必要とする装置に広く適用できる。
Note that in the embodiments described above, among the semiconductor manufacturing equipment,
In particular, although it has been described above that it is used for GaAa liquid phase growth, the present invention is not limited to this, and for example, a CVD apparatus,
The present invention can be widely applied to devices such as a diffuser 2 alloy device that requires moving contents while maintaining a high-purity atmosphere and maintaining a seal with the outside air.

以上詳述したように、この発明になる半導体製造装置で
は反応管から内容物操作用の操作棒を引き出す部分のシ
ールにアコーディオン形式のシールを用いたので、操作
棒を操作しても、尚該シール部分ではリークの発生は全
くなく、反応管の外気との遮断は完全に保持できる。か
つ、シール部分に摺動部分がないので、操作棒の移動は
非常にスムーズとなシ、モータ駆動の採用も可能となり
、従来装置では困難であった半導体製造装置の自動化も
可能になった。
As detailed above, in the semiconductor manufacturing apparatus according to the present invention, an accordion-type seal is used for the part where the operating rod for manipulating the contents is pulled out from the reaction tube. No leakage occurs at the sealed portion, and the reaction tube can be completely isolated from the outside air. In addition, since there are no sliding parts in the seal, the movement of the operating rod is extremely smooth, and it is also possible to use a motor drive, making it possible to automate semiconductor manufacturing equipment, which was difficult with conventional equipment.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のシール方法を用いた液相成長装置の一例
を示す模式断面図、第2図A −Dはこの従来装置の操
作状態をその工程順に示す模式断面図、jIa図はこの
発明の一実施例になる液相成長装置の構成を示す模式断
面図、j14図A −Dはこの実施例装置の操作状態を
その工程順に示す模式断面図である。 図において、(2)は反応管、(3)はボートのスライ
ダー(内容物) 、(4)はボートの融液溜め(内容物
)、(8)はボート操作棒(第1の操作棒) 、(9)
は融液溜め操作棒(第2の操”作棒)、輌はボート移動
用アコーディオンシール(第1の筒状体)、(IIはl
/X1の端板、−は固定台(架台)、(2)は第2の端
板、磐は第1の移動台、脅は融液溜め移ニーb用アコー
デイオンシール(第2の筒状体)、■は第3の端板、(
2)は第2の移動台である。 なお、図中同一符号は同一または和尚部分を示す0 代理人 葛野信−(外1名) 第2図 =11( 手続補正書(自発) 特許庁長官殿 1、事件の表示    特願昭6訃4oフIF14#2
、 発明の名称    al1体Il!111義置3、
補正をする者 事件との関係   特許出願人 6、補正の対象 明細書の図面の簡単な説明の欄 6、補正の内容 明細書の第1O頁第15行に「(4)は」とあるのを「
(i)は」と訂正する。 以上
FIG. 1 is a schematic cross-sectional view showing an example of a liquid phase growth apparatus using a conventional sealing method, FIGS. A schematic cross-sectional view showing the configuration of a liquid phase growth apparatus according to an embodiment of the present invention, and FIGS. In the figure, (2) is the reaction tube, (3) is the boat slider (contents), (4) is the boat melt reservoir (contents), and (8) is the boat operating rod (first operating rod). , (9)
is the melt reservoir operating rod (second operating rod), the vehicle is the accordion seal for moving the boat (first cylindrical body),
The end plate of / ), ■ is the third end plate, (
2) is the second moving table. In addition, the same reference numerals in the drawings indicate the same parts or Buddhist priest parts (0) Agent: Makoto Kuzuno (1 other person) Figure 2 = 11 (Procedural amendment (spontaneous) Mr. Commissioner of the Japan Patent Office 1, Indication of the case Patent application passed away in 1983 4o IF14#2
, Name of the invention al1 body Il! 111 Gigi 3,
Relationship with the case of the person making the amendment Patent applicant 6, column 6 of the brief explanation of the drawings in the specification subject to amendment, page 10, line 15 of the specification of the contents of the amendment says "(4) is". of"
(i) is”. that's all

Claims (1)

【特許請求の範囲】 (1)反応管と、この反応管内を外気と遮断しつつ上記
反応管内に収容された内容物を外部から移動操作する操
作棒とを有するものにおい工、周縁部が上記反応管に気
密に固着された第1の端板と、この第1の端板の中央部
を摺動可能に貫通して上記反応管内へ一端が挿入された
上記操作棒の他端に中央部が気密に固着された第2の端
板と、上記第1の端板および上記@2の端板の間に当該
部分の上記操作棒を囲んで気密に取9つけられアコーデ
ィオン形式に伸縮自在な筒状体とからなるシール装置を
備えたことを特徴とする半導体製造装置(2)反応管と
、この反応管内を外気と速断しつつ上記反応管内に収容
された内容物を外部から移動操作する第1および第2の
操作棒とを有するものにおいて、周縁部が上記反応管に
気密に固着された第1の端板と、この籐1の端板の中央
部を摺動可能に貫通して上記反応管内へ一端が挿入され
丸管状の上記第1の操作棒の他端に中央部が気密に固着
された第20端板と、上記第2の端板を貫通して上記管
状の第1の操作棒内を摺動可能に通って上記反応管内へ
一端が挿入された上記第2の操作棒の他端に中央部が気
密に固着された第3の端板と、上記第1の端板および上
記第2の端板の間に尚該部分の上記第1の操作棒を囲ん
で気密に取りつけられアコーディオン形式に伸縮自在な
第1の筒状体と、上記第2の端板および上記第3の端板
の間に当該部分の上記第2の操作棒を囲んで気密に取り
つけられアコーディオン形式に伸縮自在な第2の筒状体
とからなるシール装置を備えたことを特徴とする半導体
製造装置。 (3)第1の端板が架台に固定され、第2の端板が第1
の移動台に取りつけられるとともに、第3の端板は上記
第1の移動台の上を移動可能に載置され;tlll12
の移動台に取りつけられたことを特徴とする特許N求の
範囲MT2項記載、の半導体製造装置。
[Scope of Claims] (1) An odor system having a reaction tube and an operation rod for moving the contents contained in the reaction tube from the outside while isolating the inside of the reaction tube from the outside air; a first end plate hermetically fixed to the reaction tube; and a central portion at the other end of the operating rod, one end of which is inserted into the reaction tube by slidably penetrating the central portion of the first end plate. is airtightly attached between a second end plate to which is airtightly fixed, and the first end plate and the @2 end plate, surrounding the operating rod of the part, and a cylindrical tube that is expandable and retractable in an accordion style. (2) A semiconductor manufacturing apparatus characterized in that it is equipped with a sealing device consisting of a reaction tube, and a first device for moving the contents contained in the reaction tube from the outside while rapidly disconnecting the inside of the reaction tube from outside air. and a second operating rod, the first end plate having a peripheral edge hermetically fixed to the reaction tube, and the central part of the end plate of the rattan 1 are slidably penetrated to allow the reaction to occur. a 20th end plate having one end inserted into the tube and a central portion hermetically fixed to the other end of the round tubular first operating rod; a third end plate whose central portion is airtightly fixed to the other end of the second operating rod, one end of which is inserted into the reaction tube through the rod so as to be slidable therein; A first cylindrical body that is airtightly attached between the second end plate and surrounding the first operating rod of the part and that is extendable and retractable in an accordion style; and the second end plate and the third end. A semiconductor manufacturing apparatus comprising a sealing device comprising a second cylindrical body that is airtightly attached between plates surrounding the second operating rod of the part and is expandable and retractable like an accordion. (3) The first end plate is fixed to the pedestal, and the second end plate is fixed to the first end plate.
is attached to the moving table, and the third end plate is movably placed on the first moving table; tllll12
1. A semiconductor manufacturing apparatus as described in Section 2 of Patent No. MT, characterized in that the device is attached to a moving table.
JP3077182A 1982-02-25 1982-02-25 Preparation apparatus for semiconductor device Pending JPS58147027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3077182A JPS58147027A (en) 1982-02-25 1982-02-25 Preparation apparatus for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3077182A JPS58147027A (en) 1982-02-25 1982-02-25 Preparation apparatus for semiconductor device

Publications (1)

Publication Number Publication Date
JPS58147027A true JPS58147027A (en) 1983-09-01

Family

ID=12312939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3077182A Pending JPS58147027A (en) 1982-02-25 1982-02-25 Preparation apparatus for semiconductor device

Country Status (1)

Country Link
JP (1) JPS58147027A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49130683A (en) * 1973-04-16 1974-12-14
JPS5296865A (en) * 1976-02-04 1977-08-15 Nec Corp Crystal grown unit for chemical compound semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49130683A (en) * 1973-04-16 1974-12-14
JPS5296865A (en) * 1976-02-04 1977-08-15 Nec Corp Crystal grown unit for chemical compound semiconductor

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