JPS52137982A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS52137982A JPS52137982A JP5506576A JP5506576A JPS52137982A JP S52137982 A JPS52137982 A JP S52137982A JP 5506576 A JP5506576 A JP 5506576A JP 5506576 A JP5506576 A JP 5506576A JP S52137982 A JPS52137982 A JP S52137982A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- solder
- diffusion
- suppress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To suppress the formation of a P type inversion layer by Al solder by introducing a doner impurity several times to the securing side surface of an N type semiconductor layer through diffusion, etc.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5506576A JPS52137982A (en) | 1976-05-14 | 1976-05-14 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5506576A JPS52137982A (en) | 1976-05-14 | 1976-05-14 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52137982A true JPS52137982A (en) | 1977-11-17 |
Family
ID=12988275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5506576A Pending JPS52137982A (en) | 1976-05-14 | 1976-05-14 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52137982A (en) |
-
1976
- 1976-05-14 JP JP5506576A patent/JPS52137982A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53124087A (en) | Manufacture of semiconductor device | |
JPS52140269A (en) | Formation of solder electrode | |
JPS52137982A (en) | Production of semiconductor device | |
JPS5383467A (en) | Production of semiconductor device | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS52130567A (en) | Preparation of semiconductor device | |
JPS5373990A (en) | Semiconductor device | |
JPS5289083A (en) | Production of semiconductor photoelectric converting element | |
JPS5287373A (en) | Production of semiconductor device | |
JPS5311574A (en) | Production of semiconductor device | |
JPS52153669A (en) | Photo mask of semiconductor integrated circuit | |
JPS5316586A (en) | Semiconductor device | |
JPS5363866A (en) | Production of semiconductor device | |
JPS526081A (en) | Semiconductor wafer | |
JPS5372567A (en) | Semiconductor device | |
JPS536570A (en) | Preparation of semiconductor device | |
JPS5217768A (en) | Production method of semi-conductor device | |
JPS5251872A (en) | Production of semiconductor device | |
JPS5260581A (en) | Semiconductor device | |
JPS52141565A (en) | Manufacture of semiconductor unit | |
JPS51112292A (en) | Semiconductor device | |
JPS5431274A (en) | Manufacture of semiconductor device | |
JPS52101968A (en) | Preparation of semiconductor device | |
JPS5348491A (en) | Production of semiconductor device | |
JPS5384554A (en) | Manufacture for semiconductor device |