JPS5626479A - Optoelectro conversion device - Google Patents
Optoelectro conversion deviceInfo
- Publication number
- JPS5626479A JPS5626479A JP10290679A JP10290679A JPS5626479A JP S5626479 A JPS5626479 A JP S5626479A JP 10290679 A JP10290679 A JP 10290679A JP 10290679 A JP10290679 A JP 10290679A JP S5626479 A JPS5626479 A JP S5626479A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optoelectro
- nitride
- transmissible
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE: To obtain a device without variations in thickness and height of a junction barrier and deterioration of its optoelectro conversion efficiency, when preparing an optoelectro conversion device by providing a P-N junction or a PIN junction on a substrate through a light transmissible and electroconductive layer, by composing the light-transmissible layer of nitride.
CONSTITUTION: A-light transmissible electroconductive layer 2, which is composed of an indium oxide, a tin oxide and an antimony oxide, etc. containing 0.1∼10% of tantalum, tungsten and molybdenum, etc., is attached onto a transparent substrate 1 such as a glass, and onto this layer 2 a light-transmissible and electroconductive lager 3, such as tantalum nitride, tin nitride and antimoly nitride, etc., is attached to the minimum current-passable thickness ranging 5∼100Å. And then, 6 layers 4a through 4f of P+, N, P, N, P, N+ type using semiconductors are made to grow on this layer to form 5 P-N junctions, and these junctions are covered with an electroconductive layer 5. It is possible, by doing so, to obtain a solar cell whose optoelectro conversion efficiency is not deteriorated even if it were to be operated for a long period of time at a high temperature.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10290679A JPS5626479A (en) | 1979-08-13 | 1979-08-13 | Optoelectro conversion device |
US06/177,408 US4320249A (en) | 1979-08-13 | 1980-08-12 | Heterojunction type semiconductor photoelectric conversion device |
US06/177,409 US4387387A (en) | 1979-08-13 | 1980-08-12 | PN Or PIN junction type semiconductor photoelectric conversion device |
US06/177,407 US4320248A (en) | 1979-08-13 | 1980-08-12 | Semiconductor photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10290679A JPS5626479A (en) | 1979-08-13 | 1979-08-13 | Optoelectro conversion device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5626479A true JPS5626479A (en) | 1981-03-14 |
JPS635914B2 JPS635914B2 (en) | 1988-02-05 |
Family
ID=14339898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10290679A Granted JPS5626479A (en) | 1979-08-13 | 1979-08-13 | Optoelectro conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5626479A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57199272A (en) * | 1981-06-01 | 1982-12-07 | Mitsubishi Electric Corp | Photogenerating elements |
JPS62106670A (en) * | 1985-11-05 | 1987-05-18 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
JPH04211179A (en) * | 1991-03-27 | 1992-08-03 | Kanegafuchi Chem Ind Co Ltd | Switching element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5463690A (en) * | 1978-05-22 | 1979-05-22 | Yamazaki Shunpei | Photovoltaic force generating semiconductor and method of producing same |
-
1979
- 1979-08-13 JP JP10290679A patent/JPS5626479A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5463690A (en) * | 1978-05-22 | 1979-05-22 | Yamazaki Shunpei | Photovoltaic force generating semiconductor and method of producing same |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57199272A (en) * | 1981-06-01 | 1982-12-07 | Mitsubishi Electric Corp | Photogenerating elements |
JPH0235472B2 (en) * | 1981-06-01 | 1990-08-10 | Mitsubishi Electric Corp | |
JPS62106670A (en) * | 1985-11-05 | 1987-05-18 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
JPH04211179A (en) * | 1991-03-27 | 1992-08-03 | Kanegafuchi Chem Ind Co Ltd | Switching element |
Also Published As
Publication number | Publication date |
---|---|
JPS635914B2 (en) | 1988-02-05 |
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