JPS5626479A - Optoelectro conversion device - Google Patents

Optoelectro conversion device

Info

Publication number
JPS5626479A
JPS5626479A JP10290679A JP10290679A JPS5626479A JP S5626479 A JPS5626479 A JP S5626479A JP 10290679 A JP10290679 A JP 10290679A JP 10290679 A JP10290679 A JP 10290679A JP S5626479 A JPS5626479 A JP S5626479A
Authority
JP
Japan
Prior art keywords
layer
optoelectro
nitride
transmissible
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10290679A
Other languages
Japanese (ja)
Other versions
JPS635914B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10290679A priority Critical patent/JPS5626479A/en
Priority to US06/177,408 priority patent/US4320249A/en
Priority to US06/177,409 priority patent/US4387387A/en
Priority to US06/177,407 priority patent/US4320248A/en
Publication of JPS5626479A publication Critical patent/JPS5626479A/en
Publication of JPS635914B2 publication Critical patent/JPS635914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To obtain a device without variations in thickness and height of a junction barrier and deterioration of its optoelectro conversion efficiency, when preparing an optoelectro conversion device by providing a P-N junction or a PIN junction on a substrate through a light transmissible and electroconductive layer, by composing the light-transmissible layer of nitride.
CONSTITUTION: A-light transmissible electroconductive layer 2, which is composed of an indium oxide, a tin oxide and an antimony oxide, etc. containing 0.1∼10% of tantalum, tungsten and molybdenum, etc., is attached onto a transparent substrate 1 such as a glass, and onto this layer 2 a light-transmissible and electroconductive lager 3, such as tantalum nitride, tin nitride and antimoly nitride, etc., is attached to the minimum current-passable thickness ranging 5∼100Å. And then, 6 layers 4a through 4f of P+, N, P, N, P, N+ type using semiconductors are made to grow on this layer to form 5 P-N junctions, and these junctions are covered with an electroconductive layer 5. It is possible, by doing so, to obtain a solar cell whose optoelectro conversion efficiency is not deteriorated even if it were to be operated for a long period of time at a high temperature.
COPYRIGHT: (C)1981,JPO&Japio
JP10290679A 1979-08-13 1979-08-13 Optoelectro conversion device Granted JPS5626479A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10290679A JPS5626479A (en) 1979-08-13 1979-08-13 Optoelectro conversion device
US06/177,408 US4320249A (en) 1979-08-13 1980-08-12 Heterojunction type semiconductor photoelectric conversion device
US06/177,409 US4387387A (en) 1979-08-13 1980-08-12 PN Or PIN junction type semiconductor photoelectric conversion device
US06/177,407 US4320248A (en) 1979-08-13 1980-08-12 Semiconductor photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10290679A JPS5626479A (en) 1979-08-13 1979-08-13 Optoelectro conversion device

Publications (2)

Publication Number Publication Date
JPS5626479A true JPS5626479A (en) 1981-03-14
JPS635914B2 JPS635914B2 (en) 1988-02-05

Family

ID=14339898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10290679A Granted JPS5626479A (en) 1979-08-13 1979-08-13 Optoelectro conversion device

Country Status (1)

Country Link
JP (1) JPS5626479A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199272A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Photogenerating elements
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463690A (en) * 1978-05-22 1979-05-22 Yamazaki Shunpei Photovoltaic force generating semiconductor and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463690A (en) * 1978-05-22 1979-05-22 Yamazaki Shunpei Photovoltaic force generating semiconductor and method of producing same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199272A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Photogenerating elements
JPH0235472B2 (en) * 1981-06-01 1990-08-10 Mitsubishi Electric Corp
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element

Also Published As

Publication number Publication date
JPS635914B2 (en) 1988-02-05

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