JPS5884484A - Semiconductor laser-photodiode beam integrating element - Google Patents
Semiconductor laser-photodiode beam integrating elementInfo
- Publication number
- JPS5884484A JPS5884484A JP56181618A JP18161881A JPS5884484A JP S5884484 A JPS5884484 A JP S5884484A JP 56181618 A JP56181618 A JP 56181618A JP 18161881 A JP18161881 A JP 18161881A JP S5884484 A JPS5884484 A JP S5884484A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- semiconductor laser
- grooves
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Abstract
Description
【発明の詳細な説明】
本発明は埋め込みへテロ構造半導体レーザとＰＮ接合型
フォトダイオードとが同一半導体基板上に形成された半
導体レーザ・フォトダイオード光集積化素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser/photodiode optical integrated device in which a buried heterostructure semiconductor laser and a PN junction type photodiode are formed on the same semiconductor substrate.
近年光半導体素子や光ファイバの萬品質化が進み、光フ
アイバ通信の実用化が進められている。In recent years, the quality of optical semiconductor devices and optical fibers has improved, and optical fiber communications have been put into practical use.
それＫつれ、各種光□半導体素子を一体化してシステム
の安定化をはかろうとする気運が高まってきておシ、光
集積回路という新しい研究分野が発展しつつある。甲で
も半導体レーザと受光素子との集積化は光源の光出力を
モニタする必要性からシステム構成上重要である。性能
のよい埋め込みへテロ構造半導体レーザ（ＢＨ−ＬＤ）
とフォトダイオード（ＰＤ）とを同−半４体基板上に集
積化したものとして本出願人は特願昭５６−１２９０５
７号明細書に示した様なエツチング法を用い九Ｂ）Ｉ−
ＬＤ ＠ＰＤ光集積化素子を発明した。これはＢＨ−Ｌ
Ｄの一方の共振器面を工、チングによって形成し、それ
に相対する面をＰＤの受光向とした吃のである。この素
子においてはＦＤのキャリア発生領域のストライプ幅が
ＢＨ−ＬＤの活性層の幅よシも大きいため受光効率がよ
く、またＢＨ−ＬＤの特性が共振器画形成の丸めのエツ
チングにあまシ強く左右されず、したがりて製造歩留り
が＾いという特徴を有している。At the same time, there is a growing trend to stabilize systems by integrating various optical semiconductor devices, and a new research field called optical integrated circuits is developing. In case A, the integration of the semiconductor laser and the light receiving element is important for the system configuration because it is necessary to monitor the light output of the light source. Buried heterostructure semiconductor laser (BH-LD) with good performance
The present applicant has filed a patent application filed in 1983-12905 as a device in which a photodiode (PD) and a photodiode (PD) are integrated on the same semi-quartet substrate.
9B) I- using the etching method as shown in Specification No. 7
Invented the LD@PD optical integrated device. This is BH-L
One resonator surface of D is formed by machining and chiming, and the surface opposite to it is made to face the light receiving direction of the PD. In this device, the stripe width of the carrier generation region of the FD is larger than the width of the active layer of the BH-LD, so the light receiving efficiency is good, and the characteristics of the BH-LD are resistant to round etching in the formation of the resonator image. Therefore, it has the characteristic that the manufacturing yield is high.
しかしながら、上述の光素子においては幅の狭いＢＨ−
ＬＤのメサストライプと幅の広いＦＤのメサストライプ
との中間部分では埋め込み成長時に、明確な結晶の面方
位が出ないため、しばしば異常成長することが観１１ｊ
され、素子の製造歩留シの低下を招いていた。However, in the above-mentioned optical device, the narrow BH-
It is observed that in the middle part between the LD mesa stripe and the wide FD mesa stripe, abnormal growth often occurs because no clear crystal plane orientation occurs during buried growth.
This has led to a decrease in device manufacturing yield.
本発明の目的は上記の欠点を除去すべく、結晶成長の再
現性が向上し、製造歩留シのよい半導体レーザ・フォト
ダイオード光集積化素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser/photodiode optical integrated device with improved crystal growth reproducibility and good manufacturing yield, in order to eliminate the above-mentioned drawbacks.
本発明によれば、活性層の周囲がよシエネルギーギャ、
プの大きな、屈折率の小さな半導体材料でおおわれてい
る埋め込みへテロ構造半導体レーザとフォトダイオード
とが、同一半導体基板上に集積化された半導体レーザ・
フォトダイオード光集積化素子において、埋め込みへテ
ロ構造半導体レーザが２つの錦にはさまれた、発光再結
合する活性層を含む１本のメサストライプを有し、メサ
ストライプ以外の部分に電流ブロック層が形成されてな
シ、フォトダイオードが２本の婢によって分割されたキ
ャリア発生領域を有してなることを特徴とする半導体レ
ーザ争フォトダイオード光集積化素子が得られる。According to the present invention, the area around the active layer has a high energy gap.
A semiconductor laser is a semiconductor laser in which a buried heterostructure semiconductor laser covered with a semiconductor material with a large thickness and a low refractive index and a photodiode are integrated on the same semiconductor substrate.
In a photodiode optical integrated device, a buried heterostructure semiconductor laser has one mesa stripe sandwiched between two brocades, which includes an active layer that recombines light, and a current blocking layer in the area other than the mesa stripe. There is obtained a semiconductor laser photodiode optical integrated device characterized in that the photodiode has a carrier generation region divided by two layers.
以下本発明の実施例を示す図面を参照しつつ、本発明を
説明する。The present invention will be described below with reference to drawings showing embodiments of the invention.
第１図は本発明の実施例の断面図を示す。図中（ａ）は
その中のＢ）Ｉ−ＬＤＯ断面図、（ｂ）ＵＰＤＯ断面図
である。また第２図はこの光素子の平面図を示す０＠２
図に示すようにＢ）（−ＬＤ２０１１！：ＰＤ２０２と
がエツチングされ丸溝２０３に相対して、同一半導体基
板上に直列に配列されている。このような素子を得るに
はまず（Ｚｏｏ）ｎ−ＩｎＪＰ基板１０１上に、ｎ−Ｉ
ｎＰバッファ層１０２、発光波長が１３ａｍの組成のＩ
ｎ６６ Ｇ ｍ（，１Ｂ人”ａ６ｔ Ｐ＆、活性層１
０３、ｐ−ＩｎＰクラ、ド層１０４を順次積層させた多
層膜構造半導体ウェファに（０１１）方向に平行にｌ！
５μｍ１深さ２μｍの２本の平行な＄１２０，１２１を
形成し、これらの２本の溝に拡さまれた輪２μｍのメチ
ストライプ１０５を形成する◎続いてｐ−ＩｎＰ電流プ
ロ、り層１０６、ｎ−ＩｎＰ電流ブロック層１０７をメ
サストライプ１０５の上面のみを除いて、さらにｐ−Ｉ
ｎＰ埋め込み層１０８、発光波長１１μｍ組成のｐ−Ｉ
ｆｌＵｓ Ｇ ａｅ、ｔｓ人”ＩＪＩＰ＠Ｊｆｆ電極
層１０９を順次積層させる。ＦＤ用の全面Ｚｎ拡散を溝
の両わきの部分でｎ−ＩｎＰ電流ブロック層１０７をつ
きぬける深さまで行なって、Ｚｎ拡散層１１０を形成し
た後、電極を形成し、さらに共振器形成のためのエツチ
ングを行なって目的の光集積化素子を得る。この光素子
において、ＢＨ−Ｌｎ２Ｏ３に正のバイアスをかけて電
流を流しレーザ発振させ、ＰＤ２０２に基板に対して負
のバイアスをかけることによシ、レーザ出力光をモニタ
することができた。この際ＰＤ２０２の＝？、リア発生
層となるＩｎ６．？ｌＧ”０．０人１１Ｌ＠Ｉ Ｐ（Ｌ
、１１層１０３か細い２本の溝によって分離されている
ものの、幅が広く、シたがってこのＦＤは広い−にわた
って受光することができるため、レーザ出力光を有効に
モニタすることができ、受光感度はさらに向上し九。FIG. 1 shows a cross-sectional view of an embodiment of the invention. In the figure, (a) is a cross-sectional view of B) I-LDO and (b) a cross-sectional view of UPDO. Also, Fig. 2 shows a plan view of this optical element.
As shown in the figure, B)(-LD2011!:PD202) are etched and arranged in series on the same semiconductor substrate facing the round groove 203.To obtain such an element, first (Zoo)n -On the InJP substrate 101, n-I
nP buffer layer 102, I having a composition with an emission wavelength of 13 am
n66 G m(,1B person"a6t P&, active layer 1
03, l! in parallel to the (011) direction on a multilayer structure semiconductor wafer in which p-InP layers 104 and 104 are sequentially laminated.
Two parallel grooves 120 and 121 of 5 μm and 2 μm in depth are formed, and a ring 2 μm wide stripe 105 is formed in these two grooves. ◎Subsequently, a p-InP current layer 106 is formed. , the n-InP current blocking layer 107 is removed only from the top surface of the mesa stripe 105, and the p-I
nP buried layer 108, p-I composition with emission wavelength 11 μm
The electrode layers 109 are sequentially laminated. Zn is diffused over the entire surface for FD to a depth that penetrates the n-InP current block layer 107 on both sides of the groove, and the Zn diffusion layer is After forming 110, electrodes are formed and further etching is performed to form a resonator to obtain the desired optical integrated device.In this optical device, a positive bias is applied to BH-Ln2O3 and a current is applied to the laser beam. By oscillating the PD 202 and applying a negative bias to the substrate, it was possible to monitor the laser output light. Person 11L@I P(L
Although the 11 layers 103 are separated by two thin grooves, they are wide, so this FD can receive light over a wide area, so it can effectively monitor the laser output light and improve the light reception sensitivity. further improved.
本発明の実施例においては、埋め込み成長前までの基板
のメサエッチングパターンに、ストライプ方向で何ら不
連続な要素がなく、電流ブシツク層の形成もきわめてス
ムーズになさ゛れる。會九ＰＤ側）１？ヤリ７発生層と
なるＩｎＧａＡｓＰｆｉｌ ０３は２本の溝によって分
離されているが、等価的に横に広く広がった形状をもっ
ておシ、横方向に拡がりたレーザ出力光を効率よく受光
することができ九〇
本発明の％徽はメサエ、チングバタニンが、ストライプ
方向に何ら不連続性をもたないために、埋め込み成長が
きわめてスムーズに行なうことができ、ＢＨ−ＬＤ、Ｐ
Ｄ光＃Ｉｋ槓化素子の製造歩留シが大幅に向上したこと
であｆｉ、ＰＤのキ、−ヤリ７発生領域が等価的に横に
拡がった構造であるために受光効率もきわめて良い。In the embodiment of the present invention, there is no discontinuous element in the stripe direction in the mesa etching pattern of the substrate before buried growth, and the current busic layer can be formed extremely smoothly. Kai9 PD side) 1? The InGaAsPfil 03, which is the laser 7 generation layer, is separated by two grooves, but it has a shape that is equivalently wide in the horizontal direction, so it can efficiently receive the laser output light spread in the horizontal direction. 〇The characteristic of the present invention is that the mesae and chingbatanine do not have any discontinuity in the stripe direction, so that buried growth can be performed extremely smoothly, and BH-LD, P
The manufacturing yield of the D-light #Ik emitter element has been greatly improved, and the light-receiving efficiency is also extremely high because the fi, PD's key, - and yoke 7 generation regions are equivalently spread laterally.
＠１図（１）拡ＢＨ−ＬＤの断面図、第１図（ｂ）はＦ
ＤのＩＴ面図、第２図社本発明の実施例の光素子の平面
図である。
図中１０１はｎ−ＩｎＰ基板ｓ １０２ａｎ−Ｉｎｐ／
＜、ファ層、１０３はＩ ｎ６＠ Ｇ １ｇ＠ Ａ １
６４ Ｐ６．＠活性層、１０４はｐ−ＩｎＰクラッド層
、１０５Ｆｉ、メサストライプ、１０６はｐ−ＩｎＰ電
流電流クロッ２層０７はｎ−ＩｎＰ電流プＨｙり層、１
０８はｐ−ＩｎＰ埋め込み層、１０９はｐ−” ”ａｌ
ｌ Ｇ”ａｌｌ Ａ Ｉ ０１１ Ｆ（１，＠’Ｆ電極
層、１１０はＺｎ拡散層、１１１．１１２はｐ形オーミ
、り電極、１１３はｎ形オーミック電極、１２０゜１２
１は平行な溝、２０１はＢＨ−ＬＤ、２０２はＰＤ、２
０３はエツチング溝、２０４はＢＨ−ＬＤの活性層部分
である。
＃１面
草２図@Figure 1 (1) Cross-sectional view of enlarged BH-LD, Figure 1 (b) is F
FIG. 2 is a plan view of an optical element according to an embodiment of the present invention. In the figure, 101 is an n-InP substrate s 102 an-Inp/
<, F layer, 103 is I n6 @ G 1g @ A 1
64 P6. @Active layer, 104 is p-InP cladding layer, 105Fi is mesa stripe, 106 is p-InP current current cross layer 2 layer 07 is n-InP current pull layer, 1
08 is p-InP buried layer, 109 is p-""al
l G”all A I 011 F (1, @'F electrode layer, 110 is Zn diffusion layer, 111.112 is p-type ohmic electrode, 113 is n-type ohmic electrode, 120°12
1 is a parallel groove, 201 is BH-LD, 202 is PD, 2
03 is an etching groove, and 204 is an active layer portion of the BH-LD. #1 side grass 2 drawings
Claims (1)
折率の小さな半導体材料でおおわれている埋め込みへテ
ロ構造半導体レーザとフォトダイオードとが、同一半導
体基板上に集積化された半導体レーザ・フォトダイオー
ド光集積化素子において、前記埋め込みへテロ構造半導
体レーザが２つの溝にはさまれた、発光杏結合する活性
層を含む１本のメサストライプを有し、そのメサストラ
イプ以外の部分に電流プロ、り層が形成されてなシ、前
記フォトダイオードが２本の溝によりて分割されたキャ
リア発生領域を有してなることを特像とする半導体レー
ザ・フォトダイオード光集積化系子。A semiconductor laser is a semiconductor laser in which a buried heterostructure semiconductor laser and a photodiode are integrated on the same semiconductor substrate, in which the active layer is surrounded by a semiconductor material with a high energy gap, a large metal layer, and a low refractive index. In the photodiode optical integrated device, the buried heterostructure semiconductor laser has one mesa stripe sandwiched between two grooves and containing an active layer for light-emitting coupling, and a portion other than the mesa stripe is provided with a current. 1. A semiconductor laser/photodiode optical integrated system, characterized in that the photodiode has a carrier generation region divided by two grooves, and no protective layer is formed thereon.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56181618A JPS5884484A (en) | 1981-11-12 | 1981-11-12 | Semiconductor laser-photodiode beam integrating element |
| US06/408,302 US4470143A (en) | 1981-08-18 | 1982-08-16 | Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56181618A JPS5884484A (en) | 1981-11-12 | 1981-11-12 | Semiconductor laser-photodiode beam integrating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5884484A true JPS5884484A (en) | 1983-05-20 |
| JPS6358391B2 JPS6358391B2 (en) | 1988-11-15 |
Family
ID=16103939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56181618A Granted JPS5884484A (en) | 1981-08-18 | 1981-11-12 | Semiconductor laser-photodiode beam integrating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5884484A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4958202A (en) * | 1986-09-12 | 1990-09-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548991A (en) * | 1978-09-21 | 1980-04-08 | Nec Corp | Semiconductor joining laser forming method |
-
1981
- 1981-11-12 JP JP56181618A patent/JPS5884484A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548991A (en) * | 1978-09-21 | 1980-04-08 | Nec Corp | Semiconductor joining laser forming method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4958202A (en) * | 1986-09-12 | 1990-09-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6358391B2 (en) | 1988-11-15 |
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