JPS54150094A - Manufacture of light emitting diode - Google Patents
Manufacture of light emitting diodeInfo
- Publication number
- JPS54150094A JPS54150094A JP5942678A JP5942678A JPS54150094A JP S54150094 A JPS54150094 A JP S54150094A JP 5942678 A JP5942678 A JP 5942678A JP 5942678 A JP5942678 A JP 5942678A JP S54150094 A JPS54150094 A JP S54150094A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- substrate
- type layer
- stem
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To enhance the adhesive force of the P-type layer to the stem as well as to increase the yield by laminating the N- and P-type layers on the GaAs substrate with Si doping to form the PN junction through the liquid-phase epitaxial growth and then polishing the P-type layer into the thickness of 50∼120μm.
CONSTITUTION: The Si-doped GaAs is grown by the liquid-phase epitaxial growth on N+-type GaAs substrate 1 to from N-type layer 2 and P-type layer 3. In this case, wave or uneven part 5 is caused on the surface of layer 3, and therefore the polishing process is given to make flat the surface. The thickness of remaining layer 3 is regulated to 50∼120μm then, and the substate is placed on mount 7 containing air exhaustion hole 6 with layer 3 turned down. After this, scribing line 9 is cut the side of substrate 1 via diamond cutter 8, and the substrate is cut with pressure into chips 10. In such way, no inclination is caused when adhering to stem 11 by installing chip 10 on mount 7 with layer 3 turned down, thus increasing the yield.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5942678A JPS54150094A (en) | 1978-05-17 | 1978-05-17 | Manufacture of light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5942678A JPS54150094A (en) | 1978-05-17 | 1978-05-17 | Manufacture of light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54150094A true JPS54150094A (en) | 1979-11-24 |
Family
ID=13112915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5942678A Pending JPS54150094A (en) | 1978-05-17 | 1978-05-17 | Manufacture of light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54150094A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4575742A (en) * | 1982-12-27 | 1986-03-11 | Mitsubishi Monsanto Chemical Co., Ltd. | Epitaxial wafer for use in the production of an infrared LED |
-
1978
- 1978-05-17 JP JP5942678A patent/JPS54150094A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4575742A (en) * | 1982-12-27 | 1986-03-11 | Mitsubishi Monsanto Chemical Co., Ltd. | Epitaxial wafer for use in the production of an infrared LED |
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