JPS54150094A - Manufacture of light emitting diode - Google Patents

Manufacture of light emitting diode

Info

Publication number
JPS54150094A
JPS54150094A JP5942678A JP5942678A JPS54150094A JP S54150094 A JPS54150094 A JP S54150094A JP 5942678 A JP5942678 A JP 5942678A JP 5942678 A JP5942678 A JP 5942678A JP S54150094 A JPS54150094 A JP S54150094A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
type layer
stem
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5942678A
Other languages
Japanese (ja)
Inventor
Masanobu Koide
Mikihiko Shimura
Akira Fujimoto
Tsukasa Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP5942678A priority Critical patent/JPS54150094A/en
Publication of JPS54150094A publication Critical patent/JPS54150094A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To enhance the adhesive force of the P-type layer to the stem as well as to increase the yield by laminating the N- and P-type layers on the GaAs substrate with Si doping to form the PN junction through the liquid-phase epitaxial growth and then polishing the P-type layer into the thickness of 50∼120μm.
CONSTITUTION: The Si-doped GaAs is grown by the liquid-phase epitaxial growth on N+-type GaAs substrate 1 to from N-type layer 2 and P-type layer 3. In this case, wave or uneven part 5 is caused on the surface of layer 3, and therefore the polishing process is given to make flat the surface. The thickness of remaining layer 3 is regulated to 50∼120μm then, and the substate is placed on mount 7 containing air exhaustion hole 6 with layer 3 turned down. After this, scribing line 9 is cut the side of substrate 1 via diamond cutter 8, and the substrate is cut with pressure into chips 10. In such way, no inclination is caused when adhering to stem 11 by installing chip 10 on mount 7 with layer 3 turned down, thus increasing the yield.
COPYRIGHT: (C)1979,JPO&Japio
JP5942678A 1978-05-17 1978-05-17 Manufacture of light emitting diode Pending JPS54150094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5942678A JPS54150094A (en) 1978-05-17 1978-05-17 Manufacture of light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5942678A JPS54150094A (en) 1978-05-17 1978-05-17 Manufacture of light emitting diode

Publications (1)

Publication Number Publication Date
JPS54150094A true JPS54150094A (en) 1979-11-24

Family

ID=13112915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5942678A Pending JPS54150094A (en) 1978-05-17 1978-05-17 Manufacture of light emitting diode

Country Status (1)

Country Link
JP (1) JPS54150094A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575742A (en) * 1982-12-27 1986-03-11 Mitsubishi Monsanto Chemical Co., Ltd. Epitaxial wafer for use in the production of an infrared LED

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575742A (en) * 1982-12-27 1986-03-11 Mitsubishi Monsanto Chemical Co., Ltd. Epitaxial wafer for use in the production of an infrared LED

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