JPS56110266A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56110266A
JPS56110266A JP1226380A JP1226380A JPS56110266A JP S56110266 A JPS56110266 A JP S56110266A JP 1226380 A JP1226380 A JP 1226380A JP 1226380 A JP1226380 A JP 1226380A JP S56110266 A JPS56110266 A JP S56110266A
Authority
JP
Japan
Prior art keywords
mask
polysilicon layer
impurity region
layer
density impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1226380A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1226380A priority Critical patent/JPS56110266A/en
Publication of JPS56110266A publication Critical patent/JPS56110266A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Abstract

PURPOSE:To reduce an unevenness in side-etching dimensions by selectively diffusing impurities through a mask formed on a polysilicon layer, selectively removing the polysilicon layer to form a high-density impurity region and further forming a low-density impurity region. CONSTITUTION:A mask film 14' is formed on a polysilicon layer 13 through patterning process, and impurities are selectively picked up on the polysilicon layer 13, using the said mask layer as a mask. Next, the polysilicon layer 13 where impurities are diffused is selectively etched so that the etched parts are removed. Following this procedure, a high-density impurity region 17 is formed, using the mask film 14 as a mask. Then the mask film 14 is removed and a low-density impurity region 19' is formed using the exposed polysilicon layer 13 as a mask. After this step, a phosphorus silicate glass layer 20 is formed and a metal wiring layer 22 is formed on electrode contact windows 21, 21'.
JP1226380A 1980-02-04 1980-02-04 Manufacture of semiconductor device Pending JPS56110266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1226380A JPS56110266A (en) 1980-02-04 1980-02-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1226380A JPS56110266A (en) 1980-02-04 1980-02-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56110266A true JPS56110266A (en) 1981-09-01

Family

ID=11800478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1226380A Pending JPS56110266A (en) 1980-02-04 1980-02-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56110266A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53100776A (en) * 1977-02-15 1978-09-02 Nec Corp Production of semiconductor device
JPS54987A (en) * 1977-06-06 1979-01-06 Hitachi Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53100776A (en) * 1977-02-15 1978-09-02 Nec Corp Production of semiconductor device
JPS54987A (en) * 1977-06-06 1979-01-06 Hitachi Ltd Manufacture for semiconductor device

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