JPS5670664A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5670664A
JPS5670664A JP14668279A JP14668279A JPS5670664A JP S5670664 A JPS5670664 A JP S5670664A JP 14668279 A JP14668279 A JP 14668279A JP 14668279 A JP14668279 A JP 14668279A JP S5670664 A JPS5670664 A JP S5670664A
Authority
JP
Japan
Prior art keywords
forming
layer
substrate
melting point
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14668279A
Other languages
Japanese (ja)
Other versions
JPH0338734B2 (en
Inventor
Keizo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14668279A priority Critical patent/JPS5670664A/en
Publication of JPS5670664A publication Critical patent/JPS5670664A/en
Publication of JPH0338734B2 publication Critical patent/JPH0338734B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To eliminate the wiring contact opening forming work by forming an impurity added layer beforehand on a semiconductor substrate, connecting it with a high melting point metal as a gate electrode and forming source and drain. CONSTITUTION:After forming Si oxide film 8, gate oxide film 6' and silicon nitride film 7' on the Si substrate, an opening 15 is formed, and an impurity added layer 16 is formed on the substrate. After the layer 7' is then removed, a high melting point metal is formed on the entire surface, and a pattern 8 of the shape as shown is formed by a photoetching process. Then, a diffused layer 10 is formed by an ion implantation process and phosphorus silicate glass film 11 and metallic wire 12 are formed thereon.
JP14668279A 1979-11-13 1979-11-13 Manufacture of semiconductor device Granted JPS5670664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14668279A JPS5670664A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14668279A JPS5670664A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5670664A true JPS5670664A (en) 1981-06-12
JPH0338734B2 JPH0338734B2 (en) 1991-06-11

Family

ID=15413198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14668279A Granted JPS5670664A (en) 1979-11-13 1979-11-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5670664A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123680A (en) * 1977-04-01 1978-10-28 Nat Semiconductor Corp Mosfet ic and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123680A (en) * 1977-04-01 1978-10-28 Nat Semiconductor Corp Mosfet ic and method of producing same

Also Published As

Publication number Publication date
JPH0338734B2 (en) 1991-06-11

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