JPS5780767A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5780767A
JPS5780767A JP15654180A JP15654180A JPS5780767A JP S5780767 A JPS5780767 A JP S5780767A JP 15654180 A JP15654180 A JP 15654180A JP 15654180 A JP15654180 A JP 15654180A JP S5780767 A JPS5780767 A JP S5780767A
Authority
JP
Japan
Prior art keywords
region
layer
impurity diffused
film
electrode lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15654180A
Other languages
Japanese (ja)
Inventor
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15654180A priority Critical patent/JPS5780767A/en
Publication of JPS5780767A publication Critical patent/JPS5780767A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a preferable contact between an impurity diffused layer and a metallic wire layer by forming a columnar electrode lead formed of polycrystalline Si on an impurity diffused region. CONSTITUTION:A gate oxidized film 2, a field oxidized film 3 and a gate 5 are formed on the surface of an Si semiconductor substrate 1, and an impurity diffused region 4 is formed. Then, a columnar electrode lead 11 formed of polycrystalline Si is formed on the region 4. Then, a phosphorus silicate glass film 6 is formed on the overall surface, an electrode window is opened to expose an electrode lead 11, is heat treated to melt the film 6, and the edge is rounded. Thereafter, a metallic wire layer 9 is formed, and the layer 9 and the region 4 are conducted via the lead 11. In this manner, a hole is accurately formed, and a preferable contact between the region 4 and the layer 9 can be obtained.
JP15654180A 1980-11-07 1980-11-07 Semiconductor device and manufacture thereof Pending JPS5780767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15654180A JPS5780767A (en) 1980-11-07 1980-11-07 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15654180A JPS5780767A (en) 1980-11-07 1980-11-07 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5780767A true JPS5780767A (en) 1982-05-20

Family

ID=15630044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15654180A Pending JPS5780767A (en) 1980-11-07 1980-11-07 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5780767A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115649A (en) * 1973-03-07 1974-11-05
JPS51108774A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho
JPS54154272A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Contact forming method for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115649A (en) * 1973-03-07 1974-11-05
JPS51108774A (en) * 1975-03-20 1976-09-27 Fujitsu Ltd Handotaisochino seizohoho
JPS54154272A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Contact forming method for semiconductor device

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