JPS57106073A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS57106073A
JPS57106073A JP18251380A JP18251380A JPS57106073A JP S57106073 A JPS57106073 A JP S57106073A JP 18251380 A JP18251380 A JP 18251380A JP 18251380 A JP18251380 A JP 18251380A JP S57106073 A JPS57106073 A JP S57106073A
Authority
JP
Japan
Prior art keywords
base
contact
region
substrate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18251380A
Other languages
Japanese (ja)
Inventor
Shinichi Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18251380A priority Critical patent/JPS57106073A/en
Publication of JPS57106073A publication Critical patent/JPS57106073A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To enable saving of the number of working processes and a working hour, by a method wherein an active base and a base contact can be simultaneously formed. CONSTITUTION:An insulating film 12 is formed on a Si substrate 10 to open a part 14 forming a base region. Then, an insulating film 15 is caused to grow on the substrate 10, and after a part 13 forming a contact base is opened, impurity such as boron is poured thereinto. As a result, a high impurity concentration is obtained on the surface of the base contact 13, but an impurity concentration of a Si surface right under the film 15 becomes lower than the base contact 13. This obtains a base region as shown by the shaded line. As the next step, arsenic is ion-poured to form an emitter region. A metal is then placed on the emitter 17 and the contacts 13 to form lead out electrodes 18.
JP18251380A 1980-12-23 1980-12-23 Manufacture of semiconductor Pending JPS57106073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18251380A JPS57106073A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18251380A JPS57106073A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS57106073A true JPS57106073A (en) 1982-07-01

Family

ID=16119606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18251380A Pending JPS57106073A (en) 1980-12-23 1980-12-23 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS57106073A (en)

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