JPS53100776A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53100776A
JPS53100776A JP1570177A JP1570177A JPS53100776A JP S53100776 A JPS53100776 A JP S53100776A JP 1570177 A JP1570177 A JP 1570177A JP 1570177 A JP1570177 A JP 1570177A JP S53100776 A JPS53100776 A JP S53100776A
Authority
JP
Japan
Prior art keywords
poly
production
semiconductor device
layer
beforehand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1570177A
Other languages
Japanese (ja)
Other versions
JPS5750051B2 (en
Inventor
Yoshiharu Nishimura
Tetsushi Sakai
Yoshio Haruhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1570177A priority Critical patent/JPS53100776A/en
Publication of JPS53100776A publication Critical patent/JPS53100776A/en
Publication of JPS5750051B2 publication Critical patent/JPS5750051B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To etch poly-Si with good controllability by beforehand implanting ions by changing energies in the positions to be removed in performing selective chemical etching of a low concentration poly-Si layer of 1019 cm-3 or under in impurity concentration or undoped poly-Si layer.
COPYRIGHT: (C)1978,JPO&Japio
JP1570177A 1977-02-15 1977-02-15 Production of semiconductor device Granted JPS53100776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1570177A JPS53100776A (en) 1977-02-15 1977-02-15 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1570177A JPS53100776A (en) 1977-02-15 1977-02-15 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53100776A true JPS53100776A (en) 1978-09-02
JPS5750051B2 JPS5750051B2 (en) 1982-10-25

Family

ID=11896063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1570177A Granted JPS53100776A (en) 1977-02-15 1977-02-15 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53100776A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110266A (en) * 1980-02-04 1981-09-01 Fujitsu Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159275A (en) * 1974-11-20 1976-05-24 Fujitsu Ltd Handotaisochino seizohoho
JPS5211773A (en) * 1975-07-17 1977-01-28 Toshiba Corp Method of manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159275A (en) * 1974-11-20 1976-05-24 Fujitsu Ltd Handotaisochino seizohoho
JPS5211773A (en) * 1975-07-17 1977-01-28 Toshiba Corp Method of manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110266A (en) * 1980-02-04 1981-09-01 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5750051B2 (en) 1982-10-25

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