JPS5669867A - Junction type field-effect transistor - Google Patents

Junction type field-effect transistor

Info

Publication number
JPS5669867A
JPS5669867A JP14621279A JP14621279A JPS5669867A JP S5669867 A JPS5669867 A JP S5669867A JP 14621279 A JP14621279 A JP 14621279A JP 14621279 A JP14621279 A JP 14621279A JP S5669867 A JPS5669867 A JP S5669867A
Authority
JP
Japan
Prior art keywords
region
length direction
end edges
depletion layer
gate region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14621279A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Kenji Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP14621279A priority Critical patent/JPS5669867A/en
Publication of JPS5669867A publication Critical patent/JPS5669867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain high gm and equalize characteristics by a method wherein both end edges in the channel length direction of a depletion layer extending to a conductive channel from a lower gate region are projected to both sides more than end edges in the channel length direction of the depletion layer from an upper gate region. CONSTITUTION:A P type lower gate region is previously formed onto a P type substrate 1, an N epitaxial layer 2 is made up, and a P type upper gate region, an N type source 4 and a drain 5 are built up. The region 6 is longer than the region 3 along the channel length direction, and end edges at both sides of a depletion layer 11 from the region 6 are projected more than end edges at both sides of a depletion layer 12 from the region 3. Thus, a shape of a channel does not change even when a location of the region 3 is shifted more or less in the channel length direction, and high gm is kept and the dispersion of characteristics can be removed when the dimensions of the region 3 are accurately controlled because effective length is decided by the upper gate region.
JP14621279A 1979-11-12 1979-11-12 Junction type field-effect transistor Pending JPS5669867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14621279A JPS5669867A (en) 1979-11-12 1979-11-12 Junction type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14621279A JPS5669867A (en) 1979-11-12 1979-11-12 Junction type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5669867A true JPS5669867A (en) 1981-06-11

Family

ID=15402642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14621279A Pending JPS5669867A (en) 1979-11-12 1979-11-12 Junction type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5669867A (en)

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