JPH0586651B2 - - Google Patents
Info
- Publication number
- JPH0586651B2 JPH0586651B2 JP57171254A JP17125482A JPH0586651B2 JP H0586651 B2 JPH0586651 B2 JP H0586651B2 JP 57171254 A JP57171254 A JP 57171254A JP 17125482 A JP17125482 A JP 17125482A JP H0586651 B2 JPH0586651 B2 JP H0586651B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- flat band
- band voltage
- silicon
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
(1) 発明の技術
本発明は半導体装置の製造方法、詳しくは半導
体装置の製造工程において形成される半導体素子
のフラツトバンド電圧の変化をひきおこすような
パワーのレーザ照射がなされた後に、フラツトバ
ンド電圧をその変化前のレベルに回復するため低
パワーのレーザ照射を行う方法に関する。[Detailed Description of the Invention] (1) Technique of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more specifically, a method for manufacturing a semiconductor device, in which laser irradiation with a power that causes a change in the flat band voltage of a semiconductor element formed in the manufacturing process of a semiconductor device is performed. The present invention relates to a method of applying low power laser irradiation to restore the flat band voltage to the level before the change.
(2) 技術の背景
最近、多結晶シリコン（ポリシリコン）配線の
抵抗を下げるためや、基板のイオン注入層の活性
化のために、レーザアニールが用いられる傾向に
あり、これらのプロセスはレーザ・プロセスと呼
称される。(2) Technology background Recently, laser annealing has been used to lower the resistance of polycrystalline silicon (polysilicon) wiring and to activate the ion-implanted layer of the substrate. called a process.
かかるレーザアニールは、MOS型ダイオード
の製造を例にとると、第１図ａの断面図に示され
る如く、シリコン基板１の上に形成された酸化膜
〔二酸化シリコン（sio2）膜〕２を通し、ルビー
レーザまたはアルゴンレーザを照射することによ
つてなされる。図示の例において、レーザは酸化
膜２を透過してシリコン基板のシリコンを溶か
し、基板のイオン注入層を活性化する。 Taking the manufacture of a MOS type diode as an example, such laser annealing is used to oxidize an oxide film [silicon dioxide (SIO 2 ) film] 2 formed on a silicon substrate 1, as shown in the cross-sectional view of FIG. 1a. This is done by irradiating with a ruby laser or an argon laser. In the illustrated example, the laser passes through the oxide film 2 to melt the silicon of the silicon substrate and activate the ion-implanted layer of the substrate.
(3) 従来技術と問題点
強いパワーのレーザを、上記例の如く酸化膜２
のついたシリコン基板１に照射すると、基板１の
シリコンが溶けると共に、酸化膜２の応力が解放
され、酸化膜２が波うつ現象が見られる。その理
由は、シリコン基板１を酸化するとき、si02はそ
の容量がシリコンの倍にふくらみ、si02膜２内に
おいてはシリコン基板１の表面に沿つて圧縮応力
がかかつている。この圧縮応力は基板１のシリコ
ンが溶けるときに解放され、前記したsi02膜２が
断面図ｂに示されるように、シリコン基板１の表
面と一緒になつて波うつのである。(3) Conventional technology and problems A strong power laser is applied to the oxide film 2 as in the example above.
When irradiation is applied to the silicon substrate 1 with the irradiation, the silicon of the substrate 1 melts and the stress in the oxide film 2 is released, causing the oxide film 2 to wave. The reason for this is that when the silicon substrate 1 is oxidized, the capacitance of si0 2 expands to twice that of silicon, and compressive stress is applied within the si0 2 film 2 along the surface of the silicon substrate 1. This compressive stress is released when the silicon of the substrate 1 melts, and the si0 2 film 2 waves together with the surface of the silicon substrate 1, as shown in cross-sectional view b.
かかる基板の上にアルミニウム電極３を設けて
MOS型ダイオードを作り（第１図）、このダイオ
ードの電気特性をＣ−Ｖ曲線からフラツトバンド
電圧（VFB）を求めることによつて調べてみる
と、第２図の線図に見られるようにレーザパワー
が8Wを超えるところからVFBのシフト（移転）
が起つている。なお第２図において、横軸はレー
ザパワーをワツトＷで、また縦軸はフラツトバン
ド電圧をボルトＶで表し、図示のデータは、第１
図ｃに示すMOS型ダイオードにおいて、基板１
は300℃に加熱され、アルゴンレーザを使用し、
酸化膜２の膜厚（Xox）は420Å、シリコン基板
のホウ酸ソースの濃度（NA）は1.5×1015cm-3、
基板の結晶方位は（100）、電極３はアルミニウム
を用い形成して得たものである。また前記した波
うち現象は、レーザパワーが10Wを超えるところ
から発生している。 An aluminum electrode 3 is provided on such a substrate.
When we made a MOS diode (Figure 1) and investigated the electrical characteristics of this diode by determining the flat band voltage (VFB) from the CV curve, we found that the laser VFB shift (relocation) from the point where the power exceeds 8W
is happening. In FIG. 2, the horizontal axis represents the laser power in watts W, and the vertical axis represents the flat band voltage in volts V.
In the MOS type diode shown in Figure c, the substrate 1
is heated to 300℃ and uses an argon laser,
The film thickness (Xox) of oxide film 2 is 420 Å, the concentration (NA) of the boric acid source on the silicon substrate is 1.5×10 15 cm -3 ,
The crystal orientation of the substrate is (100), and the electrode 3 is formed using aluminum. Furthermore, the above-described wave phenomenon occurs when the laser power exceeds 10W.
前記したフラツトバンド電圧のシフトは、シリ
コンとsi02の界面の界面準位（Qss）が増加した
ためと解される。第１図ｃに示すMOS型ダイオ
ードの電気特性は、界面準位が小であるほど良い
のであるから、第２図に示すフラツトバンド電圧
を図に点線で示すところに回復させ、界面準位を
抑えた状態を得ることが要望される。 The shift in the flat band voltage described above is understood to be due to an increase in the interface state (Qss) at the interface between silicon and si02 . Since the electrical characteristics of the MOS type diode shown in Figure 1c are better as the interface state is smaller, the flat band voltage shown in Figure 2 is restored to the point indicated by the dotted line in the figure, suppressing the interface state. It is desired to obtain a state in which
(4) 発明の目的
本発明は上記従来の問題点に鑑み、フラツトバ
ンドの変化（すなわち界面順位の増大）をひきお
こすようなパワーのレーザ照射を行つた後におい
て、フラツトバンド電圧の変化を回復し（もとに
戻し）、それによつて半導体素子の電気特性を良
好に保つ方法を提供することを目的とする。(4) Purpose of the Invention In view of the above-mentioned conventional problems, the present invention provides a method for recovering (recovering) the change in flat band voltage after laser irradiation with a power that causes a change in the flat band (that is, an increase in the interface order). It is an object of the present invention to provide a method for maintaining good electrical characteristics of a semiconductor element.
(5) 発明の構成
そしてこの目的は本発明によれば、シリコン層
上にシリコン酸化膜と電極が順次形成されてなる
MOS構造を有する半導体素子の製造工程におい
て、前記シリコン層と前記シリコン酸化膜との界
面を溶融させ前記半導体素子のフラツトバンド電
圧を増加させる出力以上で前記半導体素子のレー
ザ・プロセスのためのレーザ照射を行う工程と、
前記半導体素子に、上記界面を溶融しない小さな
出力でレーザ照射を行い、前記フラツトバンド電
圧を減少させる工程とを含み、前記フラツトバン
ド電圧を調整することを特徴とする半導体装置の
製造方法を提供することによつて解決される。(5) Structure of the invention According to the invention, this object is achieved by sequentially forming a silicon oxide film and an electrode on a silicon layer.
In the manufacturing process of a semiconductor device having a MOS structure, laser irradiation for laser processing of the semiconductor device is performed at an output higher than that which melts the interface between the silicon layer and the silicon oxide film and increases the flat band voltage of the semiconductor device. The process to be carried out and
To provide a method for manufacturing a semiconductor device, comprising the step of irradiating the semiconductor element with a laser at a low output that does not melt the interface to reduce the flat band voltage, and adjusting the flat band voltage. It will be resolved accordingly.
(6) 発明の実施例 以下本発明の実施例を図面によつて説明する。(6) Examples of the invention Embodiments of the present invention will be described below with reference to the drawings.
本願の発明者は、前記したフラツトバンド電圧
の回復についての実験において、第１図ｂに示さ
れる波うつた部分に７〜8Wのパワーのレーザ照
射を行うと、フラツトバンド電圧が第２図の線図
に点線で示す如くに回復することを確認した。な
お、半導体素子の製造工程において７〜8Wのパ
ワーのレーザを照射してもフラツトバンド電圧の
変化は発生しない。 In the above-mentioned experiment on the recovery of the flat band voltage, the inventor of the present application found that when a laser beam with a power of 7 to 8 W was applied to the undulating portion shown in FIG. It was confirmed that recovery occurred as shown by the dotted line. Note that even if a laser with a power of 7 to 8 W is irradiated in the manufacturing process of a semiconductor device, no change in the flat band voltage occurs.
従つて、本発明の方法においては、基板のイオ
ン層の活性化等のレーザ・プロセスのためにフラ
ツトバンド電圧の変化をひきおこすようなパワー
のレーザが照射さた場合には、レーザ照射の後
に、７〜8Wの低いパワーのレーザを再照射する。
かかる低いパワーのレーザ照射は、レーザ・プロ
セスに用いたレーザ光源のパワーを７〜8Wにま
で下げて用いることによつて容易になされうる
し、また、かかる低いパワーのレーザ照射に要す
る時間は、第２図の線図でフラツトバンド電圧が
点線のところまで回復するに要する時間を前以つ
て測ることによつて定める。従つて、本発明の方
法は、従来のレーザ照射装置を使用することによ
つて簡便に実施しうるものである。 Therefore, in the method of the present invention, when a laser is irradiated with a power that causes a change in flat band voltage for a laser process such as activation of an ion layer of a substrate, after laser irradiation, Re-irradiate with a low power laser of ~8W.
Such low power laser irradiation can be easily achieved by lowering the power of the laser light source used in the laser process to 7 to 8 W, and the time required for such low power laser irradiation is The time required for the flat band voltage to recover to the dotted line in the diagram in Figure 2 is determined by measuring in advance. Therefore, the method of the present invention can be easily implemented using a conventional laser irradiation device.
(7) 発明の効果
以上説明したように、本発明の方法によると、
半導体素子の製造におけるレーザ・プロセスでフ
ラツトバンド電圧のシフトが発生する如きレーザ
照射がなされた場合には、７〜8Wの低いパワー
のレーザを再照射することによつて、フラツトバ
ンド電圧をシフト前のレベルに恢復することがで
き、半導体素子の電気特性が良好に保たれるの
で、製造される半導体素子の信頼性向上に効果大
である。(7) Effects of the invention As explained above, according to the method of the present invention,
If laser irradiation that causes a shift in the flat band voltage occurs during the laser process in semiconductor device manufacturing, re-irradiation with a low power laser of 7 to 8 W will bring the flat band voltage back to the level before the shift. Since the electrical characteristics of the semiconductor device can be restored to good condition, it is highly effective in improving the reliability of the manufactured semiconductor device.
第１図はMOS型ダイオードを作る工程におけ
る同装置要部の断面図、第２図は第１図のダイオ
ード製造においてなされるレーザ照射のレーザパ
ワーとフラツトバンド電圧の関係を示す線図であ
る。
１……シリコン基板、２……酸化膜、３……
Al電極。
FIG. 1 is a sectional view of the main parts of the device in the process of manufacturing a MOS type diode, and FIG. 2 is a diagram showing the relationship between the laser power of laser irradiation and flat band voltage performed in the manufacturing of the diode shown in FIG. 1...Silicon substrate, 2...Oxide film, 3...
Al electrode.
Claims (1)
形成されてなるMOS構造を有する半導体素子の
製造工程において、 前記シリコン層と前記シリコン酸化膜との界面
を溶融させ前記半導体素子のフラツトバンド電圧
を増加させる出力以上で前記半導体素子のレー
ザ・プロセスのためのレーザ照射を行う工程と、 前記半導体素子に、上記界面を溶融しない小さ
な出力でレーザ照射を行い、前記フラツトバンド
電圧を減少させる工程とを含み、 前記フラツトバンド電圧を調整することを特徴
とする半導体装置の製造方法。[Claims] 1. In the manufacturing process of a semiconductor element having a MOS structure in which a silicon oxide film and an electrode are sequentially formed on a silicon layer, an interface between the silicon layer and the silicon oxide film is melted to form the semiconductor element. irradiating the semiconductor element with a laser at a power equal to or higher than the power that increases the flat band voltage of the semiconductor element; and irradiating the semiconductor element with a laser at a low power that does not melt the interface to reduce the flat band voltage. A method for manufacturing a semiconductor device, the method comprising: adjusting the flat band voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17125482A JPS5961138A (en) | 1982-09-30 | 1982-09-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17125482A JPS5961138A (en) | 1982-09-30 | 1982-09-30 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961138A JPS5961138A (en) | 1984-04-07 |
| JPH0586651B2 true JPH0586651B2 (en) | 1993-12-13 |
Family
ID=15919908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17125482A Granted JPS5961138A (en) | 1982-09-30 | 1982-09-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961138A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5162239A (en) * | 1990-12-27 | 1992-11-10 | Xerox Corporation | Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors |
| US5210766A (en) * | 1990-12-27 | 1993-05-11 | Xerox Corporation | Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors |
| BR9607209A (en) * | 1995-03-16 | 1997-12-30 | Rohm Co Ltd | Card printer and card printing method using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5758363A (en) * | 1980-09-26 | 1982-04-08 | Oki Electric Ind Co Ltd | Manufacture of mos type semiconductor device |
-
1982
- 1982-09-30 JP JP17125482A patent/JPS5961138A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5758363A (en) * | 1980-09-26 | 1982-04-08 | Oki Electric Ind Co Ltd | Manufacture of mos type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5961138A (en) | 1984-04-07 |
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