JPS5454567A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5454567A
JPS5454567A JP12215477A JP12215477A JPS5454567A JP S5454567 A JPS5454567 A JP S5454567A JP 12215477 A JP12215477 A JP 12215477A JP 12215477 A JP12215477 A JP 12215477A JP S5454567 A JPS5454567 A JP S5454567A
Authority
JP
Japan
Prior art keywords
layers
impurities
substrates
same
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12215477A
Other languages
Japanese (ja)
Inventor
Yoshinobu Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP12215477A priority Critical patent/JPS5454567A/en
Publication of JPS5454567A publication Critical patent/JPS5454567A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To achieve the improvement in volume productivity by mechanically shaping one main surface of substrates diffused with impurities on both surfaces then chemically etching the same and diffusing the impurities.
CONSTITUTION: N+ layers 2 are formed on both surfaces of N type Si substrates 1. One surface thereof is mechanically shaped by placing the same on a rotary base 3 and revolving a cup wheel 4. Following to this, both surfaces are chemically etched about 10μ to remove distortions, after which an oxide film 5 is formed and p layers 6 and N layers 7 are selectively formed. This method increases the number of processing of one side etching and improves volume productivity
COPYRIGHT: (C)1979,JPO&Japio
JP12215477A 1977-10-07 1977-10-07 Production of semiconductor device Pending JPS5454567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12215477A JPS5454567A (en) 1977-10-07 1977-10-07 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12215477A JPS5454567A (en) 1977-10-07 1977-10-07 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5454567A true JPS5454567A (en) 1979-04-28

Family

ID=14828931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12215477A Pending JPS5454567A (en) 1977-10-07 1977-10-07 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5454567A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194583A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Mos semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169360A (en) * 1974-12-05 1976-06-15 New Nippon Electric Co Handotaisoshino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169360A (en) * 1974-12-05 1976-06-15 New Nippon Electric Co Handotaisoshino seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194583A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Mos semiconductor device and manufacture thereof

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