JPH0230187A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH0230187A
JPH0230187A JP17896588A JP17896588A JPH0230187A JP H0230187 A JPH0230187 A JP H0230187A JP 17896588 A JP17896588 A JP 17896588A JP 17896588 A JP17896588 A JP 17896588A JP H0230187 A JPH0230187 A JP H0230187A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
region
type
isolation
drain
inside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17896588A
Other versions
JPH0817234B2 (en )
Inventor
Yutaka Yoshida
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395Vertical transistors, e.g. vertical IGBT
    • H01L29/7398Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side

Abstract

PURPOSE:To solve a problem of an ON resistance and an isolation in a semiconductor integrated circuit where a vertical-type DMOSFET of one conductivity type having a drain region inside an isolation region has been arranged by a method wherein a diffusion layer of an opposite conductivity type is arranged inside the isolation region so as to be adjacent to the drain region. CONSTITUTION:In a semiconductor integrated circuit where a vertical-type DMOSFET of one conductivity type having a drain region 6 inside an isolation region limited by isolation layers 5, a diffusion layer 10b, of an opposite conductivity type, is arranged inside said isolation region so as to be adjacent to said drain region 6. For example, a p-type substrate region 10a is formed; at the same time, a p-type diffusion layer 10b as an anode region 10b of a diode D1 arranged inside an identical isolation region is formed to be adjacent to a drain wall layer 6. Then, a p<+> type substrate contact region 11a and an anode contact region 11b are formed individually in individual contact parts of the p<+> type substrate contact region 10a and the anode region 10b by a diffusion operation.
JP17896588A 1988-07-20 1988-07-20 The semiconductor integrated circuit Expired - Lifetime JPH0817234B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17896588A JPH0817234B2 (en) 1988-07-20 1988-07-20 The semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17896588A JPH0817234B2 (en) 1988-07-20 1988-07-20 The semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH0230187A true true JPH0230187A (en) 1990-01-31
JPH0817234B2 JPH0817234B2 (en) 1996-02-21

Family

ID=16057763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17896588A Expired - Lifetime JPH0817234B2 (en) 1988-07-20 1988-07-20 The semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0817234B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS
US5406110A (en) * 1991-12-30 1995-04-11 Texas Instruments Incorporated Resurf lateral double diffused insulated gate field effect transistor
US5541125A (en) * 1992-09-21 1996-07-30 Siliconix Incorporated Method for forming a lateral MOS transistor having lightly doped drain formed along with other transistors in the same substrate
US5643820A (en) * 1992-09-21 1997-07-01 Siliconix Incorporated Method for fabricating an MOS capacitor using zener diode region
JP2001127294A (en) * 1999-10-28 2001-05-11 Denso Corp Power mos transistor
JP2009200215A (en) * 2008-02-21 2009-09-03 Seiko Epson Corp Semiconductor device
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543864A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mis semiconductor device
JPS58100460A (en) * 1981-12-11 1983-06-15 Hitachi Ltd Vertical type metal oxide semiconductor device
JPS59182563A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device
JPS61182264A (en) * 1985-02-08 1986-08-14 Nissan Motor Co Ltd Vertical type mos transistor
JPS6248072A (en) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp Semiconductor device
JPS6295871A (en) * 1985-10-22 1987-05-02 Nec Corp Manufacture of semiconductor device
JPS6364365A (en) * 1986-09-05 1988-03-22 Hitachi Ltd Semiconductor device
JPS6380569A (en) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd Conductivity modulation lateral mos-fet

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543864A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mis semiconductor device
JPS58100460A (en) * 1981-12-11 1983-06-15 Hitachi Ltd Vertical type metal oxide semiconductor device
JPS59182563A (en) * 1983-03-31 1984-10-17 Fujitsu Ltd Semiconductor device
JPS61182264A (en) * 1985-02-08 1986-08-14 Nissan Motor Co Ltd Vertical type mos transistor
JPS6248072A (en) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp Semiconductor device
JPS6295871A (en) * 1985-10-22 1987-05-02 Nec Corp Manufacture of semiconductor device
JPS6364365A (en) * 1986-09-05 1988-03-22 Hitachi Ltd Semiconductor device
JPS6380569A (en) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd Conductivity modulation lateral mos-fet

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406110A (en) * 1991-12-30 1995-04-11 Texas Instruments Incorporated Resurf lateral double diffused insulated gate field effect transistor
US5374569A (en) * 1992-09-21 1994-12-20 Siliconix Incorporated Method for forming a BiCDMOS
US5416039A (en) * 1992-09-21 1995-05-16 Siliconix Incorporated Method of making BiCDMOS structures
US5422508A (en) * 1992-09-21 1995-06-06 Siliconix Incorporated BiCDMOS structure
US5426328A (en) * 1992-09-21 1995-06-20 Siliconix Incorporated BICDMOS structures
US5541125A (en) * 1992-09-21 1996-07-30 Siliconix Incorporated Method for forming a lateral MOS transistor having lightly doped drain formed along with other transistors in the same substrate
US5541123A (en) * 1992-09-21 1996-07-30 Siliconix Incorporated Method for forming a bipolar transistor having selected breakdown voltage
US5547880A (en) * 1992-09-21 1996-08-20 Siliconix Incorporated Method for forming a zener diode region and an isolation region
US5559044A (en) * 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
US5583061A (en) * 1992-09-21 1996-12-10 Siliconix Incorporated PMOS transistors with different breakdown voltages formed in the same substrate
US5618743A (en) * 1992-09-21 1997-04-08 Siliconix Incorporated MOS transistor having adjusted threshold voltage formed along with other transistors
US5643820A (en) * 1992-09-21 1997-07-01 Siliconix Incorporated Method for fabricating an MOS capacitor using zener diode region
US5648281A (en) * 1992-09-21 1997-07-15 Siliconix Incorporated Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate
US5751054A (en) * 1992-09-21 1998-05-12 Siliconix Incorporated Zener diodes on the same wafer with BiCDMOS structures
EP1119043A3 (en) * 1992-09-21 2005-07-13 SILICONIX Incorporated BiCDMOS process technology and structures
EP1119043A2 (en) * 1992-09-21 2001-07-25 SILICONIX Incorporated BiCDMOS process technology and structures
JP2001127294A (en) * 1999-10-28 2001-05-11 Denso Corp Power mos transistor
JP2009200215A (en) * 2008-02-21 2009-09-03 Seiko Epson Corp Semiconductor device
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device

Also Published As

Publication number Publication date Type
JPH0817234B2 (en) 1996-02-21 grant
JP2101641C (en) grant

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