JPS56149398A - Growing method for crystal of compound semiconductor - Google Patents

Growing method for crystal of compound semiconductor

Info

Publication number
JPS56149398A
JPS56149398A JP5334180A JP5334180A JPS56149398A JP S56149398 A JPS56149398 A JP S56149398A JP 5334180 A JP5334180 A JP 5334180A JP 5334180 A JP5334180 A JP 5334180A JP S56149398 A JPS56149398 A JP S56149398A
Authority
JP
Japan
Prior art keywords
crystal
impurity
concn
contg
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5334180A
Other languages
Japanese (ja)
Inventor
Shigeru Yasuami
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5334180A priority Critical patent/JPS56149398A/en
Publication of JPS56149398A publication Critical patent/JPS56149398A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a compound semiconductor contg. an impurity at low concn. with no or low dislocation by growing a crystal to the required diameter with no or low dislocation from a melt contg. the impurity at high concn. and using the crystal as a seed crystal and a melt contg. the impurity at the required concn.
CONSTITUTION: The 1st GaP melt 4 contg. an impurity at high concn. is formed in crucible 2 in heating furnace 1 while applying a pressure enough to inhibit the decomposition of the compound to B2O3 film 3, and seed crystal 5 is brought into contact with melt 4 through film 3 to pull GaP single crystal 6 having the required diameter. Since melt 4 contains the impurity at high concn., crystal 6 has no or low dislocation. Using crystal 6 as a seed crystal a single crystal is grown from the 2nd GaP melt contg. the impurity at the required concn. Since the seed crystal has the required diameter, dislocation from the shoulder of the resulting crystal can be avoided when the diameter is increased from that of the seed crystal. Accordingly, a GaP single crystal contg. the impurity at low concn. can be grown with no or low dislocation.
COPYRIGHT: (C)1981,JPO&Japio
JP5334180A 1980-04-22 1980-04-22 Growing method for crystal of compound semiconductor Pending JPS56149398A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5334180A JPS56149398A (en) 1980-04-22 1980-04-22 Growing method for crystal of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5334180A JPS56149398A (en) 1980-04-22 1980-04-22 Growing method for crystal of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS56149398A true JPS56149398A (en) 1981-11-19

Family

ID=12940055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5334180A Pending JPS56149398A (en) 1980-04-22 1980-04-22 Growing method for crystal of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS56149398A (en)

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