JPS56149398A - Growing method for crystal of compound semiconductor - Google Patents
Growing method for crystal of compound semiconductorInfo
- Publication number
- JPS56149398A JPS56149398A JP5334180A JP5334180A JPS56149398A JP S56149398 A JPS56149398 A JP S56149398A JP 5334180 A JP5334180 A JP 5334180A JP 5334180 A JP5334180 A JP 5334180A JP S56149398 A JPS56149398 A JP S56149398A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- impurity
- concn
- contg
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To grow a compound semiconductor contg. an impurity at low concn. with no or low dislocation by growing a crystal to the required diameter with no or low dislocation from a melt contg. the impurity at high concn. and using the crystal as a seed crystal and a melt contg. the impurity at the required concn.
CONSTITUTION: The 1st GaP melt 4 contg. an impurity at high concn. is formed in crucible 2 in heating furnace 1 while applying a pressure enough to inhibit the decomposition of the compound to B2O3 film 3, and seed crystal 5 is brought into contact with melt 4 through film 3 to pull GaP single crystal 6 having the required diameter. Since melt 4 contains the impurity at high concn., crystal 6 has no or low dislocation. Using crystal 6 as a seed crystal a single crystal is grown from the 2nd GaP melt contg. the impurity at the required concn. Since the seed crystal has the required diameter, dislocation from the shoulder of the resulting crystal can be avoided when the diameter is increased from that of the seed crystal. Accordingly, a GaP single crystal contg. the impurity at low concn. can be grown with no or low dislocation.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5334180A JPS56149398A (en) | 1980-04-22 | 1980-04-22 | Growing method for crystal of compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5334180A JPS56149398A (en) | 1980-04-22 | 1980-04-22 | Growing method for crystal of compound semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56149398A true JPS56149398A (en) | 1981-11-19 |
Family
ID=12940055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5334180A Pending JPS56149398A (en) | 1980-04-22 | 1980-04-22 | Growing method for crystal of compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56149398A (en) |
-
1980
- 1980-04-22 JP JP5334180A patent/JPS56149398A/en active Pending
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