JPS57184257A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS57184257A
JPS57184257A JP57070144A JP7014482A JPS57184257A JP S57184257 A JPS57184257 A JP S57184257A JP 57070144 A JP57070144 A JP 57070144A JP 7014482 A JP7014482 A JP 7014482A JP S57184257 A JPS57184257 A JP S57184257A
Authority
JP
Japan
Prior art keywords
photoelectric converter
single crystalline
type semiconductor
halogen elements
energy gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57070144A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57070144A priority Critical patent/JPS57184257A/en
Publication of JPS57184257A publication Critical patent/JPS57184257A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To contrive the improvement of productivity, by providing two non- single crystalline semiconductor layers of different energy gaps containing hydrogen or halogen elements with required density on a bendable film substrate to form a photoelectric converter. CONSTITUTION:A P type semiconductor 13 added for the neutralization of recoupling center with the density 0.1-200% of hydrogen or halogen elements and a non-single crystalline layer constituted of an N type semiconductor layer 11 with large energy gap (15 represents for a boundary region) thereby are laminated on the bendable substrate of FEP, plastic, capton, Mylar, polyimide, etc. to form a photoelectric converter. Besides, light is irradiated thereon from the semiconductor layer 11 with large energy gap. Thus, a photoelectric converter can be produced at low cost and continuously in a large quantity.
JP57070144A 1982-04-26 1982-04-26 Photoelectric converter Pending JPS57184257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57070144A JPS57184257A (en) 1982-04-26 1982-04-26 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57070144A JPS57184257A (en) 1982-04-26 1982-04-26 Photoelectric converter

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10251778A Division JPS5529155A (en) 1978-08-23 1978-08-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57184257A true JPS57184257A (en) 1982-11-12

Family

ID=13423081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57070144A Pending JPS57184257A (en) 1982-04-26 1982-04-26 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS57184257A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device

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