JPS63185077A - Blue light emitting diode - Google Patents
Blue light emitting diodeInfo
- Publication number
- JPS63185077A JPS63185077A JP62016921A JP1692187A JPS63185077A JP S63185077 A JPS63185077 A JP S63185077A JP 62016921 A JP62016921 A JP 62016921A JP 1692187 A JP1692187 A JP 1692187A JP S63185077 A JPS63185077 A JP S63185077A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- blue light
- emitting diode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 6
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 10
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000460 chlorine Substances 0.000 abstract description 3
- 229910052801 chlorine Inorganic materials 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 229910052711 selenium Inorganic materials 0.000 abstract description 3
- 239000011669 selenium Substances 0.000 abstract description 3
- 229910052725 zinc Inorganic materials 0.000 abstract description 3
- 239000011701 zinc Substances 0.000 abstract description 3
- 235000005074 zinc chloride Nutrition 0.000 abstract description 3
- 239000011592 zinc chloride Substances 0.000 abstract description 3
- -1 Nitrogen molecule ions Chemical class 0.000 abstract description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 9
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 241000948258 Gila Species 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000053227 Themus Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は発光ダイオードの構造及び材料に関し、特にセ
レン化亜鉛半導体を用いた高効率の青色発光ダイオード
の添加不純物及び基板材料に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to the structure and materials of light emitting diodes, and more particularly to doped impurities and substrate materials for high efficiency blue light emitting diodes using zinc selenide semiconductors.
従来の技術
従来得られている青色発光ダイオードには、窒ガリウム
を用いたものや〔例えばＮａｔｉｏｎａｌ ＴｅａＩＬ
Ｒｅｐ、 （ナシッナル テクニカル レポート）、２
８゜１ 、１）Ｉ）８３−９２ （昭５７））、炭化ケ
イ素を用いたもの〔応用電子物性分科会研究報告、３９
２゜ｐｐ７−１２（昭６７）〕が知られている。BACKGROUND OF THE INVENTION Conventionally available blue light emitting diodes include those using gallium nitrate and those using National TeaIL.
Rep, (Nasinal Technical Report), 2
8゜1, 1) I) 83-92 (1982)), using silicon carbide [Applied Electronic Materials Subcommittee Research Report, 39
2°pp7-12 (1986)] is known.
発明が解決しようとする問題点
しかし窒化ガリウムの場合はｐ型の半導体が得られない
ため、ｎ型結晶の表面に金属膜を設けたシ冒ットキー接
合型ダイオードとなっており、発光効率を高めることが
難かしい。また炭化硅素の場合、ｐｎ接合ダイオードは
得られるが、間接遷移型半導体であるため、発光効率を
高めることが本質的に難かしい。このような理由により
、上記の従来例で得られる発光効率は０．０１％程度と
極めて低く、実用性に乏しかった。Problems that the invention aims to solve However, in the case of gallium nitride, it is not possible to obtain a p-type semiconductor, so a Schottky junction diode is used, which has a metal film on the surface of an n-type crystal, increasing luminous efficiency. It's difficult. In the case of silicon carbide, a pn junction diode can be obtained, but since it is an indirect transition type semiconductor, it is essentially difficult to increase luminous efficiency. For these reasons, the luminous efficiency obtained in the above-mentioned conventional example was extremely low at about 0.01%, making it impractical.
問題点を解決するための手段
上記問題点を解決する本発明の技術的手段は、材料とし
てセレン化亜鉛（以下ＺｎＳ・と記す）を用いることで
ある。そして塩素を添加したｎｆｉＺｎＳｅと窒素を添
加したｐ型Ｚｎ８・を連続的にエピタキシャル成長させ
ることＫよりｐｎ接合発光ダイオードを形成させたもの
である。Means for Solving the Problems The technical means of the present invention for solving the above problems is to use zinc selenide (hereinafter referred to as ZnS) as the material. Then, a pn junction light emitting diode was formed by successively epitaxially growing nfiZnSe to which chlorine was added and p-type Zn8 to which nitrogen was added.
作用 この技術的手段による作用は次のようになる。action The effect of this technical means is as follows.
塩素添加ｎ型ＺｎＳ・及び窒素添加ｐ型Ｚｎ５ｅは共に
低抵抗であり、しかもＺｎ５ｅは直接遷移型半導体であ
るため、得られたｐｎ接合青色発光ダイオードは発光効
率が実用的に高いものである。Both the chlorine-doped n-type ZnS and the nitrogen-doped p-type Zn5e have low resistance, and since Zn5e is a direct transition semiconductor, the obtained pn junction blue light emitting diode has a practically high luminous efficiency.
実施例 以下、本発明を実施例によシ詳細に説明する。Example Hereinafter, the present invention will be explained in detail using examples.
第１図は、本発明による発光ダイオードの構造を模式的
に示す断面図である。FIG. 1 is a cross-sectional view schematically showing the structure of a light emitting diode according to the present invention.
このエピタキシャル成長の方法としては、分子線エピタ
キシー法が好適である。基板にはＺｎ８ｅとほぼ同一の
格子定数を有する砒化ガリウム（ＧａＡｓ）単結晶基板
１を用いた。”ＧａＡｓ単結晶基板１は基板から電極が
取れるように低抵抗ｎ型のものを使用した。結晶性の良
いＺｎ５ｅ単結晶を得るためにＧＩＬＡ！Ｉ単結晶基板
１の温度は３００°Ｃから３５０ ”Ｃの間に設定し、
超高真空中で結晶母体材料である金属亜鉛と金属セレン
の原子及び分子線と同時にドナー源として塩化亜鉛（Ｚ
ｎＣ１ｚ）の分子線をＧＩＬＡ！！単結晶基板１に照射
することにより塩素添加ｎ型Ｚｎ５・層２を形成した。Molecular beam epitaxy is suitable as a method for this epitaxial growth. A gallium arsenide (GaAs) single crystal substrate 1 having almost the same lattice constant as Zn8e was used as the substrate. "The GaAs single crystal substrate 1 was a low-resistance n-type one so that the electrode could be removed from the substrate. In order to obtain a Zn5e single crystal with good crystallinity, the temperature of the GILA!I single crystal substrate 1 was varied from 300°C to 350°C. “Set between C and
Zinc chloride (Z
GILA! nC1z) molecular beam! ! By irradiating the single crystal substrate 1, a chlorine-doped n-type Zn5 layer 2 was formed.
次にｐ型Ｚｎ８０層３を形成するためにＺｎＯ１２の分
子線を止め、窒素分子イオン（Ｎ２” ）をアクセプタ
源として金属亜鉛及び金属セレンの原子及び分子線と同
時Ｋｎ型Ｚｎ５ｅ層２上に照射することによシ窒素添加
ｐ型Ｚｎ５ｅ層３をエピタキシャル成長した。Next, in order to form the p-type Zn80 layer 3, the ZnO12 molecular beam is stopped, and nitrogen molecular ions (N2'') are used as acceptor sources to simultaneously irradiate the Kn-type Zn5e layer 2 with atoms and molecular beams of metallic zinc and metallic selenium. By doing this, a nitrogen-doped p-type Zn5e layer 3 was epitaxially grown.
さらにｐ型Ｚｎ５・層３とオーム性接触の電極を取るた
めに金電極層４を蒸着し、アニールした。このようにし
て得られたｐｎ接合實色発光ダイオードは実用的に発光
効率の高いものであった。またＭ（ＩＶＤ法などの気相
成長法でも不純物原料ガスを切シ換えることによシ、同
一の成長を行うことができる。Further, a gold electrode layer 4 was deposited and annealed to provide an electrode in ohmic contact with the p-type Zn5 layer 3. The thus obtained pn junction true color light emitting diode had a practically high luminous efficiency. Further, even with a vapor phase growth method such as M (IVD method), the same growth can be performed by switching the impurity source gas.
第２図は、室温において塩素添加ｎ型Ｚｎ８・層２の電
子密度と青色及び長波長（ｅｓｏｏｎＩＩ７５λらＴｏ
。Figure 2 shows the electron density of chlorinated n-type Zn8 layer 2 at room temperature and the blue and long wavelengths (esoonII75λ et al.
.
ｎｍの間にある幅の広い発光）の発光強度の関係を測定
したものである。こや図かられかるように、電子密度が
３×１０１６ｃｍ− ３ 以上から９×１０１６ｃｍ
− ３以下の狭い範囲で十分に強い青色発光が得られ、
青色発光素子として有効であることを発見した。This is a measurement of the relationship between the luminescence intensity of a wide range of luminescence in the range of 1 nm to 50 nm. As you can see from the diagram, the electron density is from 3 x 1016 cm-3 to 9 x 1016 cm.
- Sufficiently strong blue light emission can be obtained in a narrow range of 3 or less,
It was discovered that this material is effective as a blue light-emitting device.
ＧＩＬム８基板上にエピタキシャル成長したＺｎ８ｅ単
結晶の膜厚と前記Ｚｎ５ｅ膜の結晶性をＸ線回折（４０
０）で調べた結果、第３図にあるように結晶性を示すロ
ッキングカーブの半値全幅はＧＩＬＡＳ単結晶基板上に
エピタキシャル成長させたＺｎ５ｅ単結晶の膜厚が１μ
論程度の所で緩和していることがわかった。ゆえにＧａ
ムＳ単結晶基板１上にエピタキシャル成長させた最初の
電導型である塩素添加ｎｍｚｎｓｅ層２の膜厚を１μ曹
以上と−することによって、ｐｎ接合界面付近の結晶欠
陥を低減することができ、高効率の青色発光ダイオード
が可能となった。この結晶欠陥は、基板材料とエピタキ
シャル膜材料との格子定数及び熱膨張係数の相違が原因
であると考えられる。そのためＺｎ５ｅ単結晶の格子定
数と±０．３チ以内のほぼ同一の格子定数を有−する硫
化テルル化亜鉛及びＺｎＳ・単結晶を基板材料に用いて
も高効率の青色発光ダイオ−５ドが可能であることがわ
かった。The film thickness of the Zn8e single crystal epitaxially grown on the GIL 8 substrate and the crystallinity of the Zn5e film were measured by X-ray diffraction (40
0), as shown in Figure 3, the full width at half maximum of the rocking curve indicating crystallinity is 1μ when the film thickness of the Zn5e single crystal epitaxially grown on the GILAS single crystal substrate is 1μ.
It was found that the situation has eased to a certain degree. Therefore, Ga
By making the film thickness of the chlorine-doped nmznse layer 2, which is the first conductivity type, epitaxially grown on the muS single crystal substrate 1, to 1μ or more, crystal defects near the p-n junction interface can be reduced, and the crystal defects near the pn junction interface can be reduced. Efficient blue light emitting diodes are now possible. This crystal defect is thought to be caused by the difference in lattice constant and thermal expansion coefficient between the substrate material and the epitaxial film material. Therefore, even if zinc sulfide telluride and ZnS single crystals, which have almost the same lattice constant within ±0.3 degrees as the Zn5e single crystal, are used as substrate materials, high efficiency blue light emitting diodes cannot be produced. It turns out it's possible.
またＧａＡｓ単結晶基板１と塩素添加ｎ型Ｚｎ８ｅ層２
０間に室温における電子密度がｌ×１０１６ｃｍ− ３
以上を有するｎ＋型Ｚｎ５ｅ接触層を設けることは直列
抵抗を低減し、発光のしきい電圧を下げることに効果が
あった。In addition, a GaAs single crystal substrate 1 and a chlorine-doped n-type Zn8e layer 2
The electron density at room temperature between 0 and 0 is l×10 cm
Providing the n+ type Zn5e contact layer having the above structure was effective in reducing the series resistance and lowering the threshold voltage for light emission.
発明の効果
以上述べてきたように、本発明によれば適当な基板上に
塩素添加ｎ型Ｚｎ５ｅ層と窒素添加ｐ型Ｚｎ５ｅ層を順
次エピタキシャル成長することにより高効率の青色発光
ダイオードを実現することができ、実用的にきわめて有
用である。Effects of the Invention As described above, according to the present invention, a highly efficient blue light emitting diode can be realized by sequentially epitaxially growing a chlorine-doped n-type Zn5e layer and a nitrogen-doped p-type Zn5e layer on a suitable substrate. and is extremely useful in practice.
第１図は本発明の一実施例の青色発光ダイオードを示す
断面図、第２図は室温における塩素添加ｎ型Ｚｎ５ｅ層
の電子密度と青色及び長波長の関係を示すグラフ、第３
図はＺｎ５ｅ単結晶のＸ線回折（４００）ロッキングカ
ーブの半値全幅とＺｎ５ｅエピタキシヤル膜の厚さ依存
性を示したグラフである。
１・・・・・・低抵抗ｎ型ＧａＡｓ単結晶基板、２・・
・・・・塩素添加ｎ型Ｚｎ５ｅ層、３・・・・・・窒素
添加ｐ型Ｚｎ５ｅ層、４・・・・・・金電極層、５・・
・・・・リード線。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名５−
ワード線
第１１１１
第２図
電子急度 （Ｇ帆−リ。FIG. 1 is a cross-sectional view showing a blue light emitting diode according to an embodiment of the present invention, FIG. 2 is a graph showing the relationship between the electron density of a chlorine-doped n-type Zn5e layer and blue color and long wavelength at room temperature.
The figure is a graph showing the full width at half maximum of the X-ray diffraction (400) rocking curve of a Zn5e single crystal and the dependence on the thickness of the Zn5e epitaxial film. 1...Low resistance n-type GaAs single crystal substrate, 2...
...Chlorine-doped n-type Zn5e layer, 3...Nitrogen-doped p-type Zn5e layer, 4...Gold electrode layer, 5...
····Lead. Name of agent: Patent attorney Toshio Nakao and 1 other person5-
Word line No. 1111 Figure 2 Electronic steepness (G sail-li.
Claims (8)
レン化亜鉛層によりｐｎ接合を形成したことを特徴とす
る青色発光ダイオード。(1) A blue light emitting diode characterized in that a pn junction is formed by a chlorine-doped n-type zinc selenide layer and a nitrogen-doped p-type zinc selenide layer.
の範囲第１項記載の青色発光ダイオード。(2) A blue light emitting diode according to claim 1, which uses gallium arsenide single crystal as a substrate.
の範囲第１項記載の青色発光ダイオード。(3) A blue light emitting diode according to claim 1, which uses a zinc selenide single crystal as a substrate.
請求の範囲第１項記載の青色発光ダイオード。(4) The blue light emitting diode according to claim 1, which uses a zinc sulfide telluride single crystal as a substrate.
との違いが室温において±０．３％以下のものを用いた
特許請求の範囲第１項記載の青色発光ダイオード。(5) The blue light emitting diode according to claim 1, wherein the zinc telluride sulfide has a lattice constant difference of ±0.3% or less from that of zinc selenide at room temperature.
のセレン化亜鉛の膜厚を１μｍ以上とした特許請求の範
囲第１項記載の青色発光ダイオード。(6) The blue light emitting diode according to claim 1, wherein the film thickness of the initial conductivity type zinc selenide epitaxially grown on the substrate is 1 μm or more.
密度を３×１０＾１＾６ｃｍ＾−＾３以上から９×１０
＾１＾８ｃｍ＾−＾３以下とした特許請求の範囲第１項
記載の青色発光ダイオード。(7) Change the electron density of the chlorine-doped n-type zinc selenide layer at room temperature from 3 x 10^1^6 cm^-^3 to 9 x 10
The blue light emitting diode according to claim 1, which has a diameter of ^1^8 cm^-^3 or less.
子密度が１×１０＾１＾８ｃｍ＾−＾３以上を有するｎ
＾＋型セレン化亜鉛接触層を設けた特許請求の範囲第１
項記載の青色発光ダイオード。(8) An n layer with an electron density of 1×10^1^8 cm^-^3 or more at room temperature between the substrate and the n-type zinc selenide layer.
Claim 1 in which a ^+ type zinc selenide contact layer is provided
The blue light emitting diode described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016921A JPS63185077A (en) | 1987-01-27 | 1987-01-27 | Blue light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016921A JPS63185077A (en) | 1987-01-27 | 1987-01-27 | Blue light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63185077A true JPS63185077A (en) | 1988-07-30 |
Family
ID=11929588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62016921A Pending JPS63185077A (en) | 1987-01-27 | 1987-01-27 | Blue light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63185077A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992021170A2 (en) * | 1991-05-15 | 1992-11-26 | Minnesota Mining And Manufacturing Company | Blue-green laser diode |
| US5324963A (en) * | 1992-04-13 | 1994-06-28 | Kabushiki Kaisha Toshiba | Electroluminescent semiconductor device having chalcogenide layer and mixed crystal layer |
| US5399524A (en) * | 1992-05-05 | 1995-03-21 | Philips Electronics North America Corporation | Method of providing an ohmic type contact on p-type Zn(S)Se |
Citations (7)
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|---|---|---|---|---|
| JPS53117390A (en) * | 1977-03-24 | 1978-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Zinc selenide light emitting diode and production of the same |
| JPS5529155A (en) * | 1978-08-23 | 1980-03-01 | Shunpei Yamazaki | Semiconductor device |
| JPS5696885A (en) * | 1980-12-12 | 1981-08-05 | Semiconductor Res Found | Hetero-junction of 2-6 group compound semiconductor |
| JPS59117180A (en) * | 1982-12-23 | 1984-07-06 | Toshiba Corp | Semiconductor light-emitting element |
| JPS6360573A (en) * | 1986-09-01 | 1988-03-16 | Seiko Epson Corp | Manufacture of light-emitting device |
| JPS63116475A (en) * | 1986-11-04 | 1988-05-20 | Seiko Epson Corp | Led array and manufacture thereof |
| JPS63241342A (en) * | 1988-02-24 | 1988-10-06 | Nikon Corp | Defect inspector |
-
1987
- 1987-01-27 JP JP62016921A patent/JPS63185077A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53117390A (en) * | 1977-03-24 | 1978-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Zinc selenide light emitting diode and production of the same |
| JPS5529155A (en) * | 1978-08-23 | 1980-03-01 | Shunpei Yamazaki | Semiconductor device |
| JPS5696885A (en) * | 1980-12-12 | 1981-08-05 | Semiconductor Res Found | Hetero-junction of 2-6 group compound semiconductor |
| JPS59117180A (en) * | 1982-12-23 | 1984-07-06 | Toshiba Corp | Semiconductor light-emitting element |
| JPS6360573A (en) * | 1986-09-01 | 1988-03-16 | Seiko Epson Corp | Manufacture of light-emitting device |
| JPS63116475A (en) * | 1986-11-04 | 1988-05-20 | Seiko Epson Corp | Led array and manufacture thereof |
| JPS63241342A (en) * | 1988-02-24 | 1988-10-06 | Nikon Corp | Defect inspector |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992021170A2 (en) * | 1991-05-15 | 1992-11-26 | Minnesota Mining And Manufacturing Company | Blue-green laser diode |
| EP0670593A2 (en) * | 1991-05-15 | 1995-09-06 | Minnesota Mining And Manufacturing Company | II-VI semiconductor device and blue-green laser diode |
| EP0670593A3 (en) * | 1991-05-15 | 1996-02-07 | Minnesota Mining & Mfg | II-VI semiconductor device and blue-green laser diode. |
| US5324963A (en) * | 1992-04-13 | 1994-06-28 | Kabushiki Kaisha Toshiba | Electroluminescent semiconductor device having chalcogenide layer and mixed crystal layer |
| US5399524A (en) * | 1992-05-05 | 1995-03-21 | Philips Electronics North America Corporation | Method of providing an ohmic type contact on p-type Zn(S)Se |
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