JPS6360573A - Manufacture of light-emitting device - Google Patents
Manufacture of light-emitting deviceInfo
- Publication number
- JPS6360573A JPS6360573A JP61205687A JP20568786A JPS6360573A JP S6360573 A JPS6360573 A JP S6360573A JP 61205687 A JP61205687 A JP 61205687A JP 20568786 A JP20568786 A JP 20568786A JP S6360573 A JPS6360573 A JP S6360573A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- single crystal
- film
- type
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005468 ion implantation Methods 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 229910021476 group 6 element Inorganic materials 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 239000010408 film Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- KJDRSWPQXHESDQ-UHFFFAOYSA-N 1,4-dichlorobutane Chemical compound ClCCCCCl KJDRSWPQXHESDQ-UHFFFAOYSA-N 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 241000009298 Trigla lyra Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- LJSQFQKUNVCTIA-UHFFFAOYSA-N diethyl sulfide Chemical compound CCSCC LJSQFQKUNVCTIA-UHFFFAOYSA-N 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ALCDAWARCQFJBA-UHFFFAOYSA-N ethylselanylethane Chemical compound CC[Se]CC ALCDAWARCQFJBA-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- ORFSSYGWXNGVFB-UHFFFAOYSA-N sodium 4-amino-6-[[4-[4-[(8-amino-1-hydroxy-5,7-disulfonaphthalen-2-yl)diazenyl]-3-methoxyphenyl]-2-methoxyphenyl]diazenyl]-5-hydroxynaphthalene-1,3-disulfonic acid Chemical compound COC1=C(C=CC(=C1)C2=CC(=C(C=C2)N=NC3=C(C4=C(C=C3)C(=CC(=C4N)S(=O)(=O)O)S(=O)(=O)O)O)OC)N=NC5=C(C6=C(C=C5)C(=CC(=C6N)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] ORFSSYGWXNGVFB-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分骨〕
本発明は、表示用′Ｊｔ、源、ディスプレイなどに応用
が可能なＩＩ−ＶＩｌ族化合物半導体薄膜らなる短波長
発光素子の製造法に関する。さらに詳しくはＩＩ−ＶＩ
族化合物半導体薄膜からなるｐｎ接合型発光ダイオード
の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a method for manufacturing a short wavelength light emitting device made of a II-VII group compound semiconductor thin film, which can be applied to displays, sources, displays, etc. . For more details, see II-VI
The present invention relates to a method for manufacturing a pn junction type light emitting diode made of a group compound semiconductor thin film.
従来技術−１
高圧溶融法、パイパー・ポリッシュ法などテｆｌＥ成し
たバルクの高抵抗Ｚｎ５ｓ単結晶に亜鉛融液処理を施し
て比抵抗が１０″″２Ω・ｍ〜２０Ω・ｃｒｎ 程度
の低抵抗外−型結晶とする。続いて、イオン注入法によ
りアクセプター性不純物であるリチウム（Ｌ ｉ ）
ｖ窒素（Ｎ）、リン（Ｐ）を添加する。Conventional technology-1 A bulk high-resistance Zn5s single crystal produced using techniques such as the high-pressure melting method and Piper polishing method is subjected to zinc melt treatment to achieve a low resistivity of about 10''2Ω・m to 20Ω・crn. − type crystal. Next, lithium (L i ), which is an acceptor impurity, is added by ion implantation.
v Add nitrogen (N) and phosphorus (P).
アニールを施して注入した不純物を活性化することによ
り、結晶表面企Ｐ−型導′心性とし、Ｐ ％接合型発
光ダイオードを得る。By annealing and activating the implanted impurities, the crystal surface becomes P-type core conductive, and a P% junction type light emitting diode is obtained.
（例えば ＡｐｐＡ、Ｐｈｙｓ、Ｌｅｔｔ、、１８（１
９７１） ９９゜Ｊ、ＡｐｐＡ、Ｐｈｙｓ、 ４５ （
１９７４） １４４４゜Ｊ、Ａｐｐｘ、Ｐｈｙｇ、、４
８ （１９７７） １９６．など参照）従来技術−２
高圧溶融法、パイパー・ボリッシエ法などで作成したバ
ルクの高抵抗Ｚｎ５ｅ単結晶に亜鉛融液処理を施して比
抵抗が１０−２Ω・ｃｒｎ〜２０Ω・ｃｍ？Ａ度の低抵
抗ルー型結晶とする。続いて、熱拡散法によりアクセプ
ター性不純物であるタリウム（Ｔｎ）を結晶表面より拡
赦し、ｐ−ｓ接合型発光ダイオードを得る。（信学技報
ＩＤ８４−９０〔発明が解決しようとする問題点〕
上述の従来技術は次の様な問題点を有する。(e.g. AppA, Phys, Lett, 18(1)
971) 99°J, AppA, Phys, 45 (
1974) 1444°J, Appx, Phyg,, 4
8 (1977) 196. (See, etc.) Prior art-2 A bulk high-resistance Zn5e single crystal produced by high-pressure melting method, Piper-Borissier method, etc. is treated with zinc melt to achieve a specific resistance of 10-2Ω・crn to 20Ω・cm? It is made of A-degree low-resistance lou-type crystal. Subsequently, thallium (Tn), which is an acceptor impurity, is released from the crystal surface by a thermal diffusion method to obtain a p-s junction type light emitting diode. (IEICE Technical Report ID84-90 [Problems to be Solved by the Invention]) The above-mentioned prior art has the following problems.
１．５−型導電性を示すバルク結晶の表面からアクセプ
ター性不純物をイオン注入又は拡散により添か口してＰ
−型導電性領域を形成するため、接合部に高抵抗層がで
き、ｐ −ｉ −ｇ構造となる。この高抵抗層は素子の
直列抵抗を高くシ、発熱による素子の劣化や発光効率の
低下をもたらす。An acceptor impurity is added to the surface of a bulk crystal exhibiting 1.5-type conductivity by ion implantation or diffusion to form P.
In order to form a - type conductive region, a high resistance layer is formed at the junction, resulting in a p-i-g structure. This high resistance layer increases the series resistance of the element, resulting in deterioration of the element due to heat generation and a reduction in luminous efficiency.
２出発原料であるバルクのＺｎ５ｅ結晶の育成温度が１
０００℃以上もの高温であるため、Ｚｎ空孔が多数形成
されたり、ＣＵなどの不純物の取シ込みがおこる。Ｚｎ
空孔や（’ｕは深い準位を形成するため、発光素子を作
製した時、５００〜７００％ｍにブロードな発光ピーク
が出現し、純粋なバンド端発光が得られない。2. The growth temperature of the bulk Zn5e crystal, which is the starting material, is 1.
Since the temperature is as high as 000° C. or higher, many Zn vacancies are formed and impurities such as CU are incorporated. Zn
Since vacancies and ('u) form deep levels, when a light emitting device is fabricated, a broad emission peak appears at 500 to 700% m, making it impossible to obtain pure band edge emission.
五バルクのＺｎ５ｅ結晶を使用するためＭＭ性に乏しい
。Since five bulk Zn5e crystals are used, MM properties are poor.
そこで本発明は上述の問題を解決するもので、その目的
とするところは、純粋なバンド端発光を呈する発光素子
を、優れた蓋産性をもって作製する製造法を提供すると
ころにある。SUMMARY OF THE INVENTION The present invention is intended to solve the above-mentioned problems, and its purpose is to provide a manufacturing method for manufacturing a light emitting element exhibiting pure band edge emission with excellent lid productivity.
本発明の発光素子の製造法は、且−■族化合物半導体薄
膜を種層してなる発光素子の製造法において、単結晶基
板に低抵抗九−型単結晶簿膜をエピタキシャル成長する
工程、ノンドープυつ高抵抗単結晶薄膜をエピタキシャ
ル成長する工程、前記高抵抗薄膜にイオン注入法を用い
てｐ−型ドーパントを添ｔＪ口する工程、及びアニール
により添加したドーパントを活性化する工程を含むこと
を特徴とする。The method for manufacturing a light emitting device of the present invention includes a step of epitaxially growing a low-resistance 9-type single crystal film on a single crystal substrate, and a process for epitaxially growing a low resistance 9-type single crystal film on a single crystal substrate. The method comprises the steps of epitaxially growing a high-resistance single crystal thin film, adding a p-type dopant to the high-resistance thin film using ion implantation, and activating the added dopant by annealing. do.
第１図には本発明に係る製造法の一実施例として、Ｚｎ
５ｅからなる発光素子の製造工程を示すα）低抵抗九−
型Ｚｎ５ｅの形成
化学エツチングを施した５−型Ｇ ａ Ａ ｓ Ｏ）
（１００）面又は、（１１０）面方向に２度又は５度の
オフアングルを有する５−型ＧａＡｓ（３００）面を有
する基板■上にジメチル亜鉛（ＤｕＺｎ）＊ジエチル亜
鉛（ｐＫＺｎ）などを亜鉛ソースとし、ジメチルセレン
（ＤＭＳｅ）、ジエチルセレン（ＤＫＳｅ）＠フェニル
セレノール（Ｐｈ−３ｅＨ）などをセレンソースとする
有機金属気相熱分解法（以下ＭＯＯＶＤ法と略す）によ
り厚さ２〜３μｍσ）低抵抗５−型ｚｎｓｅエピタキシ
ャル膜■を成長させる。成長温度は５００〜５２０℃と
した。鴨−型ドーパントとしては、トリエチルアルミニ
ウム、トリエチルガリウム、１．４−ジクロルブタン。FIG. 1 shows Zn as an example of the manufacturing method according to the present invention.
α) Low resistance 9- showing the manufacturing process of a light emitting device consisting of 5e
Formation of type Zn5e (5-type Ga As O) subjected to chemical etching
Dimethylzinc (DuZn)*diethylzinc (pKZn), etc. are deposited on a substrate (100) or a 5-type GaAs (300) face with an off angle of 2 degrees or 5 degrees in the (110) direction. Thickness of 2 to 3 μm σ) was obtained using metal organic vapor phase pyrolysis method (hereinafter abbreviated as MOOVD method) using dimethyl selenium (DMSe), diethyl selenium (DKSe) @ phenylselenol (Ph-3eH), etc. as a selenium source. Grow a low resistance 5-type ZNSE epitaxial film. The growth temperature was 500 to 520°C. Duck-type dopants include triethylaluminum, triethylgallium, and 1,4-dichlorobutane.
塩素ガス、ＨＯＡガスなどを用いた。比抵抗が（Ｌ１〜
１Ω・ロウキャリア濃度が５Ｘ１０１’〜１１×１０１
７ｃｒｒｒ４程度になる様、ドーピング量企調節した。Chlorine gas, HOA gas, etc. were used. The specific resistance is (L1~
1Ω・low carrier concentration is 5×101' to 11×101
The doping amount was adjusted to about 7crrr4.
ｂ）高抵抗アンドープＺｎ５ｅの形成
α）で低抵抗聾−型Ｚｎ５ｅを形成した後に、高抵抗ア
ンドープＺｎ５ｅ膜■を厚さＣＬ２〜α５μｍ成長する
。低抵抗層から高抵抗層への切ｐ換えは、α）と同じ成
長条件下で、ドーパントの供給のみを中断することによ
り行なう。b) Formation of high-resistance undoped Zn5e After forming low-resistance deaf-type Zn5e in α), a high-resistance undoped Zn5e film 2 is grown to a thickness of CL2 to α5 μm. The switching from a low resistance layer to a high resistance layer p is carried out under the same growth conditions as α) by interrupting only the dopant supply.
成長は連続して行なった。Growth was continuous.
Ｃ）イオン注入
イオン注入法により高抵抗Ｚ ｎ Ｓ ｅ膜■にｐ −
型ドーパントである窒素（Ｎ）、リンＣＰ）。C) Ion implantation P − to high resistance ZnSe film ■ by ion implantation method
Type dopants nitrogen (N), phosphorus CP).
リチウム（Ｌｉ）、ナトリウム（Ｎａ）、銀（ＶＡｇ）
などを添加する。注入条件は、室温において、加速エネ
ルギー５０〜７０ＫｅＶ、ドーズ量１０”〜１０ ”
ｃｍ−” とした。注入後、イオン注入により照射欠
陥を除去するために、窒素気流中で３００〜４８０℃に
おいて１０〜４０分間のアニール処理を施した。処理時
間は、処理温度が低いほど長くした。アニールにより添
加した不純物の活性化がなされ、比抵抗［１５〜１０Ω
・釧の低抵抗Ｐ−型Ｚｎ５ｅ膜■が形成できた。高抵抗
Ｚｎ５ｅ膜■の厚さとイオン注入条件を制御することに
より、良好なＰ−ｎ接合か形成できた。Lithium (Li), sodium (Na), silver (VAg)
etc. are added. The implantation conditions are room temperature, acceleration energy of 50 to 70 KeV, and dose of 10'' to 10''.
cm-". After the implantation, in order to remove irradiation defects by ion implantation, annealing treatment was performed at 300 to 480°C for 10 to 40 minutes in a nitrogen stream.The lower the treatment temperature, the longer the treatment time. The added impurities were activated by annealing, and the specific resistance [15-10Ω
・A low-resistance P-type Zn5e film (2) was formed. By controlling the thickness of the high-resistance Zn5e film and the ion implantation conditions, a good P-n junction could be formed.
ｄ）基板への電極形成
ＧａＡｓ基板の裏面にＡｕ−Ｇｅの合金を蒸着し、不活
性雰囲気中４００〜４５０℃においてアニールをｉｌ、
ＧａＡｓ基板へのオーム性コンタクト■を形成する。d) Electrode formation on the substrate Au-Ge alloy was deposited on the back surface of the GaAs substrate, and annealed at 400 to 450°C in an inert atmosphere.
Form an ohmic contact (2) to the GaAs substrate.
１）ｐ−型Ｚｎ５ｅ層への電極形成
厚さｓｏｏ〜ｙｏＯＸのＡｕ■をＰ−型Ｚｎ５ｅ膜の上
に真空蒸着し、不活性雰囲気中で赤外線ランプによるア
ニールを行ない、Ｐ−型Ｚｎ５ｅ膜へのコンタクトを形
成した。1) Formation of electrodes on p-type Zn5e layer Au■ with a thickness of soo to yo OX is vacuum deposited on the P-type Zn5e film, and annealed with an infrared lamp in an inert atmosphere to form the P-type Zn5e film. contacts were formed.
上記の工程を経て形成されたウェハーを適当なチップサ
イズに切９出し、電極■、■からり−ドを取シ出した後
、順方向に゛底圧を印加すると、２Ｖ付近から青色発光
が肉眼で確認できた。発光スペクトルの代表例を第２図
に示す。発光ピーク波長はバンド端発光に・相当する４
６５〜４７０ｎｍであり、欠陥やＣｕなどが−４した深
い準位からの発光はスペクトル上に現われず、純粋な青
色発光が得られた。これは、ＭＯＯＶＤ法による成長温
度がバルクの結晶成長温度に比べて低いことやイオン注
入後のアニール温度が成長温度より低いこと、ＭＯＣｖ
Ｄ法によって得られるｚｎｓｅエピタキシャル膜が高品
質であることなどによるものと考える。After cutting the wafer formed through the above steps into appropriate chip sizes and removing the wires from electrodes (1) and (2), when a bottom pressure is applied in the forward direction, blue light is emitted from around 2V. It could be confirmed with the naked eye. A typical example of the emission spectrum is shown in FIG. The emission peak wavelength corresponds to band edge emission4
The wavelength ranged from 65 to 470 nm, and no light emission from deep levels where defects or Cu were -4 appeared on the spectrum, and pure blue light emission was obtained. This is because the growth temperature in the MOOVD method is lower than the bulk crystal growth temperature, the annealing temperature after ion implantation is lower than the growth temperature, and the MOCv
This is thought to be due to the fact that the ZNSE epitaxial film obtained by method D is of high quality.
また発光の外部を子効率は１０−３程度と比較的良い値
が得られた。これは、良好なｐ −ｎ接合が形成された
結果であり、今後、高抵抗Ｚ ｎ Ｓ ｅ Ｊ’ｆＪの
厚さとイオン注入及びアニール条件を最適化することに
よりさらに向上するものと考える。In addition, a comparatively good value of approximately 10<-3> was obtained for the external efficiency of light emission. This is a result of the formation of a good p-n junction, and it is believed that this will be further improved in the future by optimizing the thickness of the high-resistance Z n S e J'fJ and the ion implantation and annealing conditions.
本発明においては上記実施例からも明らかな様に、市販
されているＧａＡＢ基板への薄膜形成プロセスによって
素子構造を形成するため、バルク結晶の育成及びＺｎ融
液処理による低抵抗化工程にそれぞれ１週間程度の長時
間を公安とした従来技術に比べ量産性が大幅に向上する
のは明らかである。In the present invention, as is clear from the above examples, in order to form an element structure by a thin film formation process on a commercially available GaAB substrate, one step is required for each of bulk crystal growth and Zn melt treatment to reduce resistance. It is clear that mass productivity is greatly improved compared to the conventional technology, which uses public safety over a long period of about a week.
上述す工程はＧａＡθ基板上にＺｎ５ｅからなる発光素
子を形成する場合のみならず、Ｇａｐ。The above steps are used not only when forming a light emitting element made of Zn5e on a GaAθ substrate, but also when forming a light emitting element made of Zn5e on a GaAθ substrate.
Ｓｉ 、Ｇｅなどの基板上にＺｎ５ｅをはじめとする種
々の材料を用φて素子を形成する場合においても全く同
じ手順で適当することが可能である。Exactly the same procedure can be used to form an element using various materials such as Zn5e on a substrate such as Si or Ge.
例えば、硫黄ソースとしてジメチル硫黄（ＤＭＳ）、ジ
エチル硫黄（ＤＥＳ）、プロパンチオール（Ｐ ｒ Ｏ
−Ｓ Ｈ）などを用いることにより、ｚｎＳｘＳｅｌ−
、（０≦Ｘ≦１）からなるｐ −ｎ接合型の発光素子が
作製できる。For example, dimethyl sulfur (DMS), diethyl sulfur (DES), propanethiol (P r O
-S H) etc., znSxSel-
, (0≦X≦1), a p-n junction type light emitting device can be manufactured.
又同様に、カドミニウムソースとして、ジメチルカドミ
ニウム（ＤＭＣｄ）、ジエチルカドミニウム（ＤＥＯｄ
）を用いることにより、Ｚ ｎ ｌ −Ｘ ０ｄｘｓ
（０≦末≦１）あるいはＺ ｎ １−１ Ｃｄ ＸＳ
１−ｙ Ｓ １３７ （０≦ｘ、ｙ≦１）からなるｐ
−ｎ接合型の発光素子が作製できる。これらの材料を
用いた発光素子の作製も不発明によって実現されるもの
であり、いずれも不発明の範躊に含まれるものである。Similarly, dimethyl cadmium (DMCd) and diethyl cadmium (DEOd) are used as cadmium sources.
), Z n l −X 0dxs
(0≦end≦1) or Z n 1-1 Cd XS
p consisting of 1-y S 137 (0≦x, y≦1)
- An n-junction type light emitting device can be manufactured. The production of light emitting elements using these materials is also achieved by non-invention, and both fall within the scope of non-invention.
作製した素子はバンド帯発光を呈し、特性は、前述σＵ
Ｇ ｔＬＡ ｓ基板上に形成したＺｎ５ｅからなるＰ−
％接合型発光素子と同程度でありＡいずれの場合も良好
であった。The fabricated device exhibits band-band light emission, and its characteristics are as described above.
P- made of Zn5e formed on a G tLA s substrate
% was comparable to that of the junction type light emitting element, and both cases of A were good.
以上述べた様に本発明によれば、…−■族化合物半導体
薄膜を積層してなる発光素子の製造法において、単結晶
基板上に低抵抗５−型単結晶薄膜をエピタキシャル成長
する工程、ノンドープの高抵抗単結晶薄膜をエピタキシ
ャル成長する工程、前記高抵抗薄膜にイオン注入法を用
いてＰ−型ドーパントを添加する工程、及びアニールに
より添加したドーパントを活性化する工程を実施するこ
とにより、純粋なバンド帯発光のみを呈する高効率の発
光素子が菫産可能となりた１本発明が１−■族化合物半
導体薄膜を用いた発光素子、主として発光波長が可視短
波長領域に属する発光素子の製造に寄与するところ極め
て大きいと確信する。As described above, according to the present invention, in a method for manufacturing a light emitting device formed by laminating thin films of group compound semiconductors, a step of epitaxially growing a low resistance 5-type single crystal thin film on a single crystal substrate, a non-doped By performing the steps of epitaxially growing a high-resistance single crystal thin film, adding a P-type dopant to the high-resistance thin film using ion implantation, and activating the added dopant by annealing, a pure band It has become possible to produce highly efficient light-emitting devices that only emit light in the band. The present invention contributes to the production of light-emitting devices using thin films of 1-■ group compound semiconductors, mainly light-emitting devices whose emission wavelengths belong to the visible short wavelength region. I'm sure it's extremely large.
本発明により可視短波長発光素子を用いたディスプレイ
などのデバイスの普及が期待される。The present invention is expected to popularize devices such as displays that use visible short wavelength light emitting elements.
第１図（α）〜（ｇ）は本発明に係る発光素子Ｑ）製造
法の一実施例を示す工程図。
１・・・・・・基板
２・・・・・・低抵抗、−型ｚｎｓｅエピタキシャル膜
３・・・・・・高抵抗アンドープＺｎ５ｅｉ４・・・・
・・イオンビーム
５・・・・・・低抵抗Ｐ−型Ｚ ｎ Ｓ−ｅ膜６・・・
・・・基板へのオーム性コンタクト７・・・・・・Ｐ
Ｚｎ５ｅ膜へのオーム性フンタクト第２図は本発明に
よって作製した発光素子σつ特性？示す発光スペクトル
図。
以 上
出願人 セイコーエプソン株式会社
代理人 弁理士般上務（他１名）
し
第１圀
物 伽 乙００
シ皮−ｆｚ、＜ｘ九）
＊２ 凹FIGS. 1(α) to (g) are process diagrams showing one embodiment of the method for manufacturing the light emitting device Q) according to the present invention. 1...Substrate 2...Low resistance, -type Znse epitaxial film 3...High resistance undoped Zn5ei4...
...Ion beam 5...Low resistance P-type ZnSe film 6...
...Ohmic contact 7 to the board...P
Ohmic contact with Zn5e film Figure 2 shows the characteristics of the light emitting device fabricated according to the present invention. The emission spectrum diagram shown. Applicant Seiko Epson Co., Ltd. Agent General Patent Attorney (1 other person)
Claims (3)
子の製造法において、単結晶基板上に低抵抗ｎ−型単結
晶薄膜をエピタキシャル成長する工程、ノンドープの高
抵抗単結晶薄膜をエピタキシャル成長する工程、前記高
抵抗薄膜にイオン注入法を用いてｐ−型ドーパントを添
加する工程、及びアニールにより添加したドーパントを
活性化する工程を含むことを特徴とした発光素子の製造
法(1) In a method for manufacturing a light emitting device formed by laminating II-VI group compound semiconductor thin films, a step of epitaxially growing a low resistance n-type single crystal thin film on a single crystal substrate, a step of epitaxially growing a non-doped high resistance single crystal thin film. A method for manufacturing a light emitting device, comprising: a step of adding a p-type dopant to the high-resistance thin film using an ion implantation method; and a step of activating the added dopant by annealing.
する温度が、イオン注入後のアニール温度より高いこと
を特徴とする特許請求の範囲第一項記載の発光素子の製
造法。(2) The method for manufacturing a light emitting device according to claim 1, wherein the temperature at which the II-VI group compound semiconductor thin film is epitaxially grown is higher than the annealing temperature after ion implantation.
を、II族元素を含む有機金属化合物とVI族元素を含む有
機化合物をソースとする有機金属気相熱分解法により行
なうことを特徴とする特許請求の範囲第一項記載の発光
素子の製造法。(3) A patent claim characterized in that the epitaxial growth of a II-VI group compound semiconductor thin film is performed by an organometallic vapor phase pyrolysis method using an organometallic compound containing a group II element and an organic compound containing a group VI element as sources. A method for manufacturing a light emitting device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61205687A JPS6360573A (en) | 1986-09-01 | 1986-09-01 | Manufacture of light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61205687A JPS6360573A (en) | 1986-09-01 | 1986-09-01 | Manufacture of light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6360573A true JPS6360573A (en) | 1988-03-16 |
Family
ID=16511041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61205687A Pending JPS6360573A (en) | 1986-09-01 | 1986-09-01 | Manufacture of light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6360573A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119280A (en) * | 1986-11-06 | 1988-05-23 | Matsushita Electric Ind Co Ltd | Blue light emitting diode |
| JPS63184373A (en) * | 1986-09-26 | 1988-07-29 | Toshiba Corp | Semiconductor light emitting device and manufacture of the same |
| JPS63185077A (en) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | Blue light emitting diode |
| JPH0824357B2 (en) * | 1992-05-27 | 1996-03-06 | シーメンス ニクスドルフ インフオルマチオーンスジステーメ アクチエンゲゼルシヤフト | Picture tube screen device with standby position function |
-
1986
- 1986-09-01 JP JP61205687A patent/JPS6360573A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63184373A (en) * | 1986-09-26 | 1988-07-29 | Toshiba Corp | Semiconductor light emitting device and manufacture of the same |
| JPS63119280A (en) * | 1986-11-06 | 1988-05-23 | Matsushita Electric Ind Co Ltd | Blue light emitting diode |
| JPS63185077A (en) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | Blue light emitting diode |
| JPH0824357B2 (en) * | 1992-05-27 | 1996-03-06 | シーメンス ニクスドルフ インフオルマチオーンスジステーメ アクチエンゲゼルシヤフト | Picture tube screen device with standby position function |
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