CN105789399B - P-type broad stopband oxide and ZnO combination vertical structure light-emitting devices and preparation method thereof - Google Patents
P-type broad stopband oxide and ZnO combination vertical structure light-emitting devices and preparation method thereof Download PDFInfo
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- CN105789399B CN105789399B CN201610286126.9A CN201610286126A CN105789399B CN 105789399 B CN105789399 B CN 105789399B CN 201610286126 A CN201610286126 A CN 201610286126A CN 105789399 B CN105789399 B CN 105789399B
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- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000002347 injection Methods 0.000 claims abstract description 31
- 239000007924 injection Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910018885 Pt—Au Inorganic materials 0.000 claims description 2
- 229910007569 Zn—Au Inorganic materials 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000013517 stratification Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- NQLVCAVEDIGMMW-UHFFFAOYSA-N cyclopenta-1,3-diene;cyclopentane;nickel Chemical compound [Ni].C=1C=C[CH-]C=1.[CH-]1[CH-][CH-][CH-][CH-]1 NQLVCAVEDIGMMW-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention belongs to light emitting semiconductor device and its preparing technical field, is related to several p-type broad stopbands oxide and ZnO combination vertical structure light-emitting devices and preparation method thereof.Device is formed by substrate, in the n ZnO luminescent layers of substrate Epitaxial growth, the hole injection layer prepared on n ZnO luminescent layers, the Top electrode prepared on hole injection layer, the bottom electrode that is prepared below substrate successively, it is characterised in that：Substrate is the conductive Si single-chips of n-type, and hole injection layer is p-type broad stopband oxide semiconductor film materials, and thickness range is 200nm~2000nm, and carrier (hole) concentration range is 2 × 1017~5 × 1019/cm3.The present invention can solve ZnO material p-type doping difficult problem, while device is simple using vertical stratification technique, can further expand the application of device.
Description
Technical field
The invention belongs to light emitting semiconductor device and its preparing technical field, and in particular to a kind of p based on zno-based material
Molded breadth forbidden band oxide and ZnO combination vertical structure light-emitting devices and preparation method thereof.
Background technology
GaN material has wider application prospect in solid-state illumination field.ZnO and GaN band gap and lattice is normal
Number is sufficiently close to, and has close photoelectric characteristic.But compared with GaN, there is ZnO higher fusing point and exciton bind energy, exciton to increase
Benefit is higher, epitaxial growth temperature is low, cost is low, easy etching and make to be easier the processing of the rear road of epitaxial wafer, make the system of device
For more convenient etc..Therefore, the luminescent device such as zno-based luminous tube, laser, which is succeeded in developing, is possible to substitution or part substitution GaN
Base photoelectric device, bigger application prospect is had, particularly ZnO is purple, ultraviolet light photo device more people are paid attention to.
But due to undoped with ZnO material be often presented that n-type is conductive (being labeled as n-ZnO), and its carrier (electronics) is dense
Degree generally 5 × 1017~2 × 1019/cm3, therefore p-type ZnO material is difficult to prepare.At present it has been reported that some p-types ZnO materials
Expect that technology of preparing is all also immature, thus prepare ZnO material p-n junction luminescent device and also have any problem.In order to overcome zno-based photophore
This of part is difficult, the present invention propose several other p-type broad stopbands oxides and n-type ZnO combination vertical structure light-emitting devices and
Its preparation method.
Because have some broad stopband oxide semiconductor materials undoped with when be exactly p-type material, just as ZnO undoped with when just
That n-type material is the same, these undoped with broad stopband oxide semiconductor material its carrier (hole) concentration up to 2 × 1017
~2 × 1018/cm3If further carry out p-type doping (different material institute dopings is different), its carrier (hole) concentration
It can further improve, can be up to 5 × 1017~5 × 1019/cm3, such as NiO, CuO material.It can be seen that such some broad stopband oxide materials
Material is easier to be prepared into the conductive p-type semiconductor material of high hole, and easily and p-n junction type photophore is prepared in n-type ZnO combinations
Part.
The content of the invention
The purpose of the present invention is exactly to adulterate difficult problem to solve ZnO material p-type, utilizes other p-type broad stopbands oxide
P-n junction type luminescent device is prepared in semi-conducting material and n-type ZnO combinations, while in order to simplify device preparation technology, is reduced into
This, substrate is prepared into vertical stratification using the conductive Si monocrystal materials of n-type, device.
P-type broad stopband oxide and ZnO combination vertical structure light-emitting devices designed by the present invention is (see accompanying drawing 1 and accompanying drawing
Illustrate), successively by substrate 1, on substrate 1 the n-ZnO luminescent layers 2 of epitaxial growth, the hole prepared on n-ZnO luminescent layers 2
Implanted layer 3, the Top electrode 4 prepared on hole injection layer 3, the lower surface of substrate 1 prepare bottom electrode 5 form, its feature exists
In：Substrate 1 is that (its carrier (electronics) concentration range is 5 × 10 to the conductive Si single-chips of n-type17~2 × 1019/cm3), hole
Implanted layer 3 is p-type broad stopband oxide semiconductor film materials, and thickness range is 200nm~2000nm, and carrier (hole) is dense
It is 2 × 10 to spend scope17~5 × 1019/cm3。
Further in order to utilize our MOCVD techniques, of the invention and specific proposition hole injection layer 3 is that p-type NiO is thin
The p-type broad stopband oxide and ZnO combination vertical structure light-emitting devices of membrane material, successively by substrate 1, on substrate 1 extension life
Long n-ZnO luminescent layers 2, the hole injection layer 3 prepared on n-ZnO luminescent layers 2, the upper electricity prepared on hole injection layer 3
Pole 4, the bottom electrode 5 prepared in the lower surface of substrate 1 are formed, it is characterised in that：Substrate 1 is the conductive Si single-chips of n-type, and hole is noted
It is p-type NiO thin-film materials to enter layer 3.
Also specific p-type broad stopband oxide and the ZnO combination for proposing hole injection layer 3 as p-type CuO thin-film materials of the present invention
Vertical structure light-emitting device, successively by substrate 1, on substrate 1 the n-ZnO luminescent layers 2 of epitaxial growth, on n-ZnO luminescent layers 2
The hole injection layer 3 of preparation, the Top electrode 4 prepared on hole injection layer 3, the structure of bottom electrode 5 prepared in the lower surface of substrate 1
Into, it is characterised in that：Substrate 1 is the conductive Si single-chips of n-type, and hole injection layer 3 is p-type CuO thin-film materials.
Further for the p-type Ga prepared using us2O3Technique (the patent No.：ZL201310414275.5), propose again
Hole injection layer 3 is p-type Ga2O3The p-type broad stopband oxide and ZnO combination vertical structure light-emitting devices of thin-film material, successively by
The n-ZnO luminescent layers 2 of substrate 1, on substrate 1 epitaxial growth, the hole injection layer 3 prepared on n-ZnO luminescent layers 2, in sky
The Top electrode 4 prepared on cave implanted layer 3, the bottom electrode 5 prepared in the lower surface of substrate 1 are formed, it is characterised in that：Substrate 1 is n-type
Conductive Si single-chips, hole injection layer 3 is p-type Ga2O3Thin-film material.
The preparation method of p-type broad stopband of the present invention oxide and ZnO combination vertical structure light-emitting devices, its feature
It is：Using MOCVD, (metal has for n-ZnO luminescent layers 2 and p-type broad stopband oxide semiconductor film materials hole injection layer 3
Chemical machine is vapor-deposited) it is prepared by method.
Comprise the following steps that：
1) MOCVD methods, the ZnO described in particularly with Chinese patent 02100436.6 and ZL200410011164.0 are used
The special growth MOCVD device of film and its technique on the conductive Si single crystalline substrates piece 1 of n-type growth undoped with n-ZnO light
Layer 2, its thickness is 300~800nm, and its carrier (electronics) concentration is 5 × 1017~2 × 1019/cm3；
2) MOCVD methods are used again, it is particularly special with the ZnO film described in 02100436.6 and ZL200410011164.0
P-type broad stopband oxide semiconductor film materials hole injection layer 3 is grown on n-ZnO luminescent layers 2 with growth MOCVD device
(these p-type broad stopband oxide semiconductor film materials can be undoped with p-type material or doping p-type
Material, different materials institute dopant material are different.), its thickness is 300~2000nm, and carrier concentration is 5 × 1017~2 ×
1019/cm3；
3) thermal evaporation station or electron beam and then in the subregion of the upper surface of hole injection layer 3 (10~30% of area) are used
Evaporator evaporation metal prepares Top electrode 4, and the region for not preparing Top electrode 4 is output optical zone；
4) the conductive Si single-chips substrate 1 of n-type is finally thinned to 60~150 microns, then steamed in the lower surface of substrate 1 with heat
Hair platform or electron beam evaporation platform evaporation metal prepare bottom electrode 5, and finally under nitrogen gas protection, alloy moves back upper/lower electrode together
Fire, annealing temperature can be at 300~450 DEG C, and annealing time is 2~5 minutes, so as to which the wide taboo of p-type of the present invention be prepared
Band oxide and ZnO combination vertical structure light-emitting devices.
Upper and lower electrode material can use one kind in the alloy materials such as Au, Al, Ni-Au, Ti-Au, Zn-Au or Pt-Au, its
Thickness is 100~600 nanometers.
The invention has the advantages that：
P-type broad stopband oxide and ZnO combination vertical structure light-emitting devices prepared by the present invention, due to using undoped with just
It is the broad stopband oxide material of p-type electric-conducting, or we have prepared more ripe p-type broad stopband oxide material and have prepared hole
Implanted layer 3, can solve ZnO material p-type doping difficult problem, while device uses vertical stratification, technique is simple, can be further
Expand the application of device.
Brief description of the drawings
Fig. 1：P-type broad stopband oxide and ZnO combination vertical structure light-emitting device architecture schematic diagrames.
Part 1 is substrate in figure, and 2 be n-ZnO luminescent layers, and 3 be hole injection layer, and 4 be Top electrode, and 5 be bottom electrode.
Fig. 2：The broad stopband oxide and ZnO combination vertical structure light-emitting device currents of p-type NiO thin-film materials become with voltage
Change curve.
Fig. 3：P-type broad stopband oxide and ZnO combination vertical structure light-emitting device electrical pumpings for p-type NiO thin-film materials
Luminescent spectrum.
Fig. 4：P-type broad stopband oxide and ZnO combination vertical structure light-emitting device electrical pumpings for p-type CuO thin-film materials
Luminescent spectrum.
Fig. 5：For p-type Ga2O3The p-type broad stopband oxide and ZnO combination vertical structure light-emitting device electrical pumpings of thin-film material
Luminescent spectrum.
Embodiment
Describe the specific embodiment and implementing process of the present invention in detail below in conjunction with technical scheme and accompanying drawing.
Embodiment 1：
The p-type broad stopband oxide and ZnO combination vertical structure light-emitting devices of p-type NiO thin-film materials.This luminescent device
Structure is shown in accompanying drawing 1, and its preparation process is, special using the ZnO film described in 02100436.6 and ZL200410011164.0 patents
With growth MOCVD device and technique the conductive Si single-chips of n-type (can directly be commercially available, its carrier concentration is 2 ×
1018/cm3) on substrate 1 growth undoped with n-ZnO luminescent layers 2, its thickness be 500nm, and carrier concentration is 2 × 1018/cm3；
Then again using the special growth MOCVD device of the ZnO film described in 02100436.6 and ZL200410011164.0 patents in n-
ZnO luminescent layers 2 above then grow undoped with p-type NiO thin-film materials hole injection layer 3, organic nickel source of growth is first
Base dicyclopentadienyl nickel (NiMCP2), source bottle temperature are 50 DEG C, and growth temperature is 600 DEG C, working gas argon gas and oxygen mixed gas,
Reaction chamber pressure is 80Pa, and growth time 1 hour, film thickness 500nm, carrier (hole) concentration is 5 × 1017/cm3.So
Use mask platemaking technology afterwards, deposited by electron beam evaporation platform the upper part region of p-type NiO thin-film materials hole injection layer 3 (area
15%) alloy Ni-Au is deposited and prepares Top electrode 4, the region for not preparing Top electrode 4 is output optical zone；Finally Si substrates 1 are thinned
Bottom electrode 5 is prepared with thermal evaporation station evaporation metal Al to 100 microns, then in the lower surface of substrate 1, is finally protected in nitrogen gas
Under, upper/lower electrode together anneal by alloy, and annealing temperature is at 420 DEG C.The thickness of Top electrode 4 and bottom electrode 5 is 150nm, during annealing
Between be 3 minutes.
Embodiment 2：
The p-type broad stopband oxide and ZnO combination vertical structure light-emitting devices of p-type CuO thin-film materials.This luminescent device
Structure is shown in accompanying drawing 1, and its preparation process is, special using the ZnO film described in 02100436.6 and ZL200410011164.0 patents
With growth MOCVD device and technique, in n-Si single-chips substrate 1, (its carrier concentration is 2 × 1018/cm3) on growth undoped with
N-ZnO luminescent layers 2, its thickness is 500nm, and carrier concentration is 2 × 1018/cm3；Then 02100436.6 He is used again
The special growth MOCVD device of ZnO film described in ZL200410011164.0 patents then grows on n-ZnO luminescent layers 2
Undoped with p-type CuO thin-film materials hole injection layer 3, the organic copper sources of growth are 2,2,6,6- tetramethyl -3,5- heptadione
(TMHD) (Htmhd=2,2,6,6 ,-tetramethyl-3,5-heptandione), source bottle temperature is 90 DEG C, and growth temperature is
600 DEG C, working gas argon gas and oxygen mixed gas, reaction chamber pressure is 200Pa, growth time 1 hour, film thickness
400nm, carrier (hole) concentration are 6 × 1017/cm3.Then mask platemaking technology is used, deposited by electron beam evaporation platform is in p-type CuO
The upper part region of thin-film material hole injection layer 3 (15% of area) evaporation Au prepares Top electrode 4, does not prepare Top electrode 4
Region be output optical zone；Si substrates 1 are finally thinned to 100 microns, then in the lower surface of substrate 1 thermal evaporation station evaporation metal Al
Bottom electrode 5 is prepared, finally under nitrogen gas protection, upper/lower electrode together anneal by alloy, and annealing temperature is 420 DEG C.Top electrode 4
Thickness with bottom electrode 5 is 150nm, and annealing time is 3 minutes.
Embodiment 3：
P-type Ga2O3The p-type broad stopband oxide and ZnO combination vertical structure light-emitting devices of thin-film material.This photophore
Part structure is shown in accompanying drawing 1, and its preparation process is, using the ZnO film described in 02100436.6 and ZL200410011164.0 patents
(its carrier concentration is 2 × 10 in n-Si single-chips substrate 1 for special growth MOCVD device and technique18/cm3) on grow and do not mix
Miscellaneous n-ZnO luminescent layers 2, its thickness are 500nm, and carrier concentration is 2 × 1018/cm3；Then ZL is used again
201310414275.5 the p-type Ga described in patent2O3Then the p-type of magnesium is mixed in growth to preparation technology on n-ZnO luminescent layers 2
Ga2O3Thin-film material hole injection layer 3, doped source are two luxuriant magnesium, and source bottle temperature is 25 DEG C, and growth temperature is 600 DEG C, work gas
Body argon gas and oxygen mixed gas, reaction chamber pressure are 120Pa, growth time 1 hour, film thickness 500nm, carrier
(hole) concentration is 7.5 × 1017/cm3.Then mask platemaking technology is used, deposited by electron beam evaporation platform is in p-type Ga2O3Thin-film material is empty
The upper part region of cave implanted layer 3 (15% of area) evaporation Au prepares Top electrode 4, and the region for not preparing Top electrode 4 is
Light area；Si substrates 1 are finally thinned to 100 microns, then bottom electrode is prepared with thermal evaporation station evaporation metal Al in the lower surface of substrate 1
5, finally under nitrogen gas protection, upper/lower electrode together anneal by alloy, and annealing temperature is 430 DEG C.Top electrode 4 and bottom electrode 5
Thickness be 150nm, annealing time is 3 minutes.
To tentatively prepare the p-type broad stopband oxides of p-type NiO thin-film materials and ZnO combination vertical structure light-emittings device,
The p-type broad stopband oxide and ZnO combination vertical structure light-emitting devices and p-type Ga of p-type CuO thin-film materials2O3The p of thin-film material
The electric current of molded breadth forbidden band oxide and ZnO combination vertical structure light-emitting devices is tested with voltage change characteristic, wherein p-type
The p-type broad stopband oxide and ZnO combination vertical structure light-emitting device currents of NiO thin-film materials are with voltage change characteristic such as Fig. 2
Shown, this characteristic of other two kinds of devices is also more or less the same, and three kinds of device currents are almost identical with voltage change curve shape,
P-n junction diode characteristic is all presented, does not draw one by one here.The electrical pumping characteristics of luminescence of three kinds of devices is also tested,
Its electrical pumping luminescent spectrum respectively as shown in Fig. 3,4,5, although due to being preliminary experiment, the crystal mass of epitaxial thin film material
Differ larger, experimental result is also undesirable, and the luminescent spectrum difference of three kinds of devices is larger, but all realizes the electricity of ZnO material
Injection is luminous, and it is feasible to have sufficed to show that its technology path.If further the epitaxy technique of optimization Material growth improves
Crystal mass, while optimised devices structure and preparation technology, the characteristics of luminescence of device can make moderate progress, and further realize ZnO materials
The electronic injection laser transmitting of material is also possible.
Claims (3)
- A kind of 1. p-type Ga2O3With ZnO combination vertical structure light-emitting devices, successively by substrate (1), in substrate (1) Epitaxial growth N-ZnO luminescent layers (2), prepared on n-ZnO luminescent layers (2) hole injection layer (3), prepared on hole injection layer (3) Top electrode (4), the bottom electrode (5) for preparing below in substrate (1) forms, it is characterised in that：Substrate (1) is the conductive Si of n-type Single-chip, its carrier electrons concentration range are 5 × 1017~2 × 1019/cm3, hole injection layer (3) is the p-type Ga for mixing magnesium2O3 Semiconductor film material, thickness range are 200nm~2000nm, and carrier hole concentration range is 2 × 1017~5 × 1019/ cm3；And the luminescent device is prepared by following steps,1) on the conductive Si single crystalline substrates piece (1) of n-type growth undoped with n-ZnO luminescent layers (2), its thickness is 300~ 800nm, carrier concentration are 5 × 1017~2 × 1019/cm3；2) the p-type Ga of magnesium is mixed in growth on n-ZnO luminescent layers (2)2O3Semiconductor film material hole injection layer (3), its thickness are 300~2000nm, carrier concentration are 5 × 1017~2 × 1019/cm3；3) the subregion evaporation metal in hole injection layer (3) upper surface prepares Top electrode (4), does not prepare Top electrode (4) Region be output optical zone；4) the conductive Si substrates (1) of n-type are thinned to 60~150 microns, then evaporation metal prepares bottom electrode below in substrate (1) (5), finally under nitrogen gas protection, upper and lower electrode metal annealing, annealing temperature is 300~450 DEG C, annealing time is 2~ 5 minutes, so as to which p-type Ga be prepared2O3With ZnO combination vertical structure light-emitting devices.
- A kind of 2. p-type Ga as claimed in claim 12O3With ZnO combination vertical structure light-emitting devices, it is characterised in that：It is upper and lower Electrode material is Au, Al, Ni-Au, Ti-Au, Zn-Au or Pt-Au, and thickness is 100~600 nanometers.
- A kind of 3. p-type Ga as claimed in claim 12O3With ZnO combination vertical structure light-emitting devices, it is characterised in that：Using MOCVD techniques prepare n-ZnO luminescent layers (2) and hole injection layer (3)；Top electrode is prepared using evaporator or electron beam evaporation platform And bottom electrode (5) (4).
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|---|---|---|---|---|
| CN103268911A (en) * | 2013-04-22 | 2013-08-28 | 浙江大学 | p-NiO/n-ZnO heterojunction light-emitting device and preparation method thereof |
| CN103280498A (en) * | 2013-04-22 | 2013-09-04 | 常州大学 | Preparation method of pointed-cone-shaped zinc oxide/nickel oxide heterojunction diodes |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103268911A (en) * | 2013-04-22 | 2013-08-28 | 浙江大学 | p-NiO/n-ZnO heterojunction light-emitting device and preparation method thereof |
| CN103280498A (en) * | 2013-04-22 | 2013-09-04 | 常州大学 | Preparation method of pointed-cone-shaped zinc oxide/nickel oxide heterojunction diodes |
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| Title |
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| Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction;Byung Oh Jung et al.;《Journal of Crystal Growth》;20121024;第370卷;第315页第1栏第2-4段及图1 * |
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