JPS5687328A - Semiconductor treatment device - Google Patents

Semiconductor treatment device

Info

Publication number
JPS5687328A
JPS5687328A JP16497479A JP16497479A JPS5687328A JP S5687328 A JPS5687328 A JP S5687328A JP 16497479 A JP16497479 A JP 16497479A JP 16497479 A JP16497479 A JP 16497479A JP S5687328 A JPS5687328 A JP S5687328A
Authority
JP
Japan
Prior art keywords
plasma
gas
central part
peripheral part
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16497479A
Other languages
Japanese (ja)
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP16497479A priority Critical patent/JPS5687328A/en
Publication of JPS5687328A publication Critical patent/JPS5687328A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To correct the fluctuations of plasma effect in the central part and the peripheral part by a method wherein the supply section of reaction gas is separated into two systems, i.e. the central part and peripheral part, and the gas amount to be supplied can respectively independently be controlled, in a plasma treating apparatus. CONSTITUTION:A susceptor 2 holding a wafer 1 and a gas feeder 4 (4A, 4B) are both disc and arranged in parallel facing to each other in a reaction chamber. The gas feeder 4 is composed of two gas supply units 4A and 4B which respectively independently control a flow-rate of the reaction gases. A mass flow meter and needle valve etc. are employed for flow-rate regulating devices 7A, 7B. Thus, there can be corrected a nonuniformity in the treatment of plasma caused by the difference in the plasma effects in the central part and the peripheral part of the reaction chamber. For example, when a silicon nitride film is formed on the wafer 1 on the plasma treatment, the more reaction gases are made to be supplied to the peripheral part 4B rather than to the central part 4A.
JP16497479A 1979-12-18 1979-12-18 Semiconductor treatment device Pending JPS5687328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16497479A JPS5687328A (en) 1979-12-18 1979-12-18 Semiconductor treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16497479A JPS5687328A (en) 1979-12-18 1979-12-18 Semiconductor treatment device

Publications (1)

Publication Number Publication Date
JPS5687328A true JPS5687328A (en) 1981-07-15

Family

ID=15803417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16497479A Pending JPS5687328A (en) 1979-12-18 1979-12-18 Semiconductor treatment device

Country Status (1)

Country Link
JP (1) JPS5687328A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133429U (en) * 1991-05-30 1992-12-11 シヤープ株式会社 semiconductor manufacturing equipment
JPH05335239A (en) * 1992-05-27 1993-12-17 Tokyo Electron Ltd Film forming apparatus
JPH0645266A (en) * 1991-12-30 1994-02-18 Texas Instr Inc <Ti> Programmable multizone gas injector for single-wafer semiconductor treatment apparatus
WO1995033082A2 (en) * 1994-05-26 1995-12-07 Philips Electronics N.V. Plasma treatment and apparatus in electronic device manufacture
EP0844314A2 (en) * 1996-11-26 1998-05-27 Siemens Aktiengesellschaft Distribution plate for a reaction chamber
JP2007502917A (en) * 2003-08-21 2007-02-15 東京エレクトロン株式会社 Method and apparatus for depositing materials having tunable optical and etching properties.

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133429U (en) * 1991-05-30 1992-12-11 シヤープ株式会社 semiconductor manufacturing equipment
JPH0645266A (en) * 1991-12-30 1994-02-18 Texas Instr Inc <Ti> Programmable multizone gas injector for single-wafer semiconductor treatment apparatus
JPH05335239A (en) * 1992-05-27 1993-12-17 Tokyo Electron Ltd Film forming apparatus
WO1995033082A2 (en) * 1994-05-26 1995-12-07 Philips Electronics N.V. Plasma treatment and apparatus in electronic device manufacture
US5532190A (en) * 1994-05-26 1996-07-02 U.S. Philips Corporation Plasma treatment method in electronic device manufacture
EP0844314A2 (en) * 1996-11-26 1998-05-27 Siemens Aktiengesellschaft Distribution plate for a reaction chamber
EP0844314A3 (en) * 1996-11-26 2001-04-11 Siemens Aktiengesellschaft Distribution plate for a reaction chamber
JP2007502917A (en) * 2003-08-21 2007-02-15 東京エレクトロン株式会社 Method and apparatus for depositing materials having tunable optical and etching properties.

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