JPS61192446U - - Google Patents
Info
- Publication number
- JPS61192446U JPS61192446U JP7620385U JP7620385U JPS61192446U JP S61192446 U JPS61192446 U JP S61192446U JP 7620385 U JP7620385 U JP 7620385U JP 7620385 U JP7620385 U JP 7620385U JP S61192446 U JPS61192446 U JP S61192446U
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- etched
- introduction pipe
- entrance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006185 dispersion Substances 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
- 238000009423 ventilation Methods 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Description
第１図は本考案の一実施例を示すエツチング装
置の断面図、第２図は第１図の真空チヤンバ内に
装填される載置棚の要部断面図、第３図は第１図
図示のドライエツチング装置に使用される第１の
分散板を示す斜視図、第４図は第１図図示のドラ
イエツチング装置に使用される第２の分散板を示
す斜視図、第５図は従来のドライエツチング装置
を示す概略図である。
１１…真空チヤンバ、１３…支持台、１８…載
置棚、２１…アルミニウム製の遮蔽板、２２…ガ
ス導入管、２３…排出管、２４…第１の分散板、
２６…第２の分散板、２７…スリツト、２８…被
エツチング材（ウエハ）。
Fig. 1 is a sectional view of an etching device showing an embodiment of the present invention, Fig. 2 is a sectional view of a main part of a mounting shelf loaded into the vacuum chamber of Fig. 1, and Fig. 3 is a sectional view of an etching device shown in Fig. 1. FIG. 4 is a perspective view showing a second dispersion plate used in the dry etching apparatus shown in FIG. 1 is a schematic diagram showing a dry etching apparatus. DESCRIPTION OF SYMBOLS 11... Vacuum chamber, 13... Support stand, 18... Mounting shelf, 21... Aluminum shielding plate, 22... Gas introduction pipe, 23... Discharge pipe, 24... First dispersion plate,
26... Second dispersion plate, 27... Slit, 28... Material to be etched (wafer).
Claims (1)
より生成したエツチングガスを導入するガス導入
管と該チヤンバ内のガスを排気する排気管を設け
、かつ前記ガス導入管の途中に該導入管を流通す
る反応性ガスを励起するためのプラズマ発生器を
介装した構造のドライエツチング装置において、
前記真空チヤンバ内に被エツチング材を多段に載
置する載置棚を設けると共に、該載置棚の前記被
エツチング材の間に各被エツチング材を仕切る遮
蔽板を設け、更に前記ガス導入管の前記チヤンバ
の入口部に第１の分散板を設け、かつ同入口部と
前記載置棚の間のチヤンバ内に多数の通気孔を有
する第２の分散板を配置したことを特徴とするド
ライエツチング装置。 A vacuum chamber is provided with a gas introduction pipe for introducing an etching gas generated by plasma excitation of a reactive gas and an exhaust pipe for exhausting the gas in the chamber, and a reaction is carried out through the introduction pipe in the middle of the gas introduction pipe. In a dry etching device with a structure interposed with a plasma generator for exciting a reactive gas,
A mounting shelf is provided in the vacuum chamber on which the materials to be etched are placed in multiple stages, and a shielding plate is provided between the materials to be etched on the mounting shelf to partition each material to be etched. Dry etching characterized in that a first dispersion plate is provided at the entrance of the chamber, and a second dispersion plate having a large number of ventilation holes is arranged in the chamber between the entrance and the shelf. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985076203U JPH051071Y2 (en) | 1985-05-22 | 1985-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985076203U JPH051071Y2 (en) | 1985-05-22 | 1985-05-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61192446U true JPS61192446U (en) | 1986-11-29 |
| JPH051071Y2 JPH051071Y2 (en) | 1993-01-12 |
Family
ID=30618132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985076203U Expired - Lifetime JPH051071Y2 (en) | 1985-05-22 | 1985-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH051071Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317077A (en) * | 1976-07-30 | 1978-02-16 | Nec Corp | Production of semiconductor device |
| JPS5748226A (en) * | 1980-09-05 | 1982-03-19 | Matsushita Electronics Corp | Plasma processing method and device for the same |
| JPS5831532A (en) * | 1981-08-18 | 1983-02-24 | Nec Corp | Plasma treatment apparatus |
-
1985
- 1985-05-22 JP JP1985076203U patent/JPH051071Y2/ja not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317077A (en) * | 1976-07-30 | 1978-02-16 | Nec Corp | Production of semiconductor device |
| JPS5748226A (en) * | 1980-09-05 | 1982-03-19 | Matsushita Electronics Corp | Plasma processing method and device for the same |
| JPS5831532A (en) * | 1981-08-18 | 1983-02-24 | Nec Corp | Plasma treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH051071Y2 (en) | 1993-01-12 |
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