JPS5513922A - Vapor phase growthing method and its device - Google Patents

Vapor phase growthing method and its device

Info

Publication number
JPS5513922A
JPS5513922A JP8649278A JP8649278A JPS5513922A JP S5513922 A JPS5513922 A JP S5513922A JP 8649278 A JP8649278 A JP 8649278A JP 8649278 A JP8649278 A JP 8649278A JP S5513922 A JPS5513922 A JP S5513922A
Authority
JP
Japan
Prior art keywords
gas
flow
line
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8649278A
Other languages
Japanese (ja)
Other versions
JPS63939B2 (en
Inventor
Atsuo Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8649278A priority Critical patent/JPS5513922A/en
Publication of JPS5513922A publication Critical patent/JPS5513922A/en
Publication of JPS63939B2 publication Critical patent/JPS63939B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

PURPOSE:To obtain a film with a good quality by achieving the vapor phase growth after controlling the variation of the gas flow in the reaction chamber gas line and the reactive gas exhaust line and adjusting equally the internal pressure in the reaction chamber gas line and reactive gas line after or before the biginning of the vapor phase growth. CONSTITUTION:By utilizing a tube path wherein are appropriately positioned a flow meter FM, an automatic flow controller AFC and a valve V, the gas flow FRL of a reaction chamber gas line 3 before the vapor phase growth, is equvalent to the sum of the flow Fcm of a main carrier gas H2 plus the flow FCS of subcarrier gas weaken. The flow F'RL of the gas line 3 during the vapor phase growth is the total adding the main carrier flow Fcm to the flow FR of impurity gas and reactive system gas of SiH4. A valve 22 is used to regulate the flow for maintaining FCS= FR and FRL=F'RL. The pressure is adjusted so that there is not occurred any difference between the internal pressures on the reactive gas mix line and reaction chamber gas line, the complete preparatory condition is held imediately after the beginning of the vapor phase growth, and thus the stable vapor growth can be achieved without causing the gas flow's variation in a reactive gas exhaust line 19 and without occurring temperature change also at a support substrate.
JP8649278A 1978-07-14 1978-07-14 Vapor phase growthing method and its device Granted JPS5513922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8649278A JPS5513922A (en) 1978-07-14 1978-07-14 Vapor phase growthing method and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8649278A JPS5513922A (en) 1978-07-14 1978-07-14 Vapor phase growthing method and its device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP27352688A Division JPH01164026A (en) 1988-10-28 1988-10-28 Gas mixing device

Publications (2)

Publication Number Publication Date
JPS5513922A true JPS5513922A (en) 1980-01-31
JPS63939B2 JPS63939B2 (en) 1988-01-09

Family

ID=13888474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8649278A Granted JPS5513922A (en) 1978-07-14 1978-07-14 Vapor phase growthing method and its device

Country Status (1)

Country Link
JP (1) JPS5513922A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027119A (en) * 1983-07-22 1985-02-12 Nec Corp Vapor growth device of semiconductor
JPS60255694A (en) * 1984-05-31 1985-12-17 Mitsubishi Metal Corp Method for forming thin film of compound of group iii-v
JPS61500799A (en) * 1983-12-22 1986-04-24 デイモツク，ジヤツク・エイ wafer processing machine
JPS61115324A (en) * 1984-11-12 1986-06-02 Matsushita Electronics Corp Vapor growth method
JPS61136993A (en) * 1984-12-10 1986-06-24 Agency Of Ind Science & Technol Method for growing semiconductor crystal
JPS61229321A (en) * 1985-04-03 1986-10-13 Matsushita Electric Ind Co Ltd Vapor growth method
JPS6328875A (en) * 1986-07-23 1988-02-06 Anelva Corp Method for introducing gas
JPS6444012A (en) * 1987-08-12 1989-02-16 Fuji Electric Co Ltd Gas dilution apparatus
JPH055502U (en) * 1991-07-11 1993-01-26 株式会社ユーエイキヤスター Castor with braking device
JPH07153705A (en) * 1994-05-20 1995-06-16 Matsushita Electric Ind Co Ltd Vapor growth device
CN103882409A (en) * 2014-03-13 2014-06-25 中国科学院半导体研究所 Source conveying gas path device with adjustable mixing ratio

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027119A (en) * 1983-07-22 1985-02-12 Nec Corp Vapor growth device of semiconductor
JPS61500799A (en) * 1983-12-22 1986-04-24 デイモツク，ジヤツク・エイ wafer processing machine
JPH0254317B2 (en) * 1984-05-31 1990-11-21 Mitsubishi Metal Corp
JPS60255694A (en) * 1984-05-31 1985-12-17 Mitsubishi Metal Corp Method for forming thin film of compound of group iii-v
JPS61115324A (en) * 1984-11-12 1986-06-02 Matsushita Electronics Corp Vapor growth method
JPH0642454B2 (en) * 1984-11-12 1994-06-01 松下電子工業株式会社 Vapor growth method
JPS61136993A (en) * 1984-12-10 1986-06-24 Agency Of Ind Science & Technol Method for growing semiconductor crystal
JPS61229321A (en) * 1985-04-03 1986-10-13 Matsushita Electric Ind Co Ltd Vapor growth method
JPS6328875A (en) * 1986-07-23 1988-02-06 Anelva Corp Method for introducing gas
JPH0118152B2 (en) * 1986-07-23 1989-04-04 Nichiden Anelva Kk
JPS6444012A (en) * 1987-08-12 1989-02-16 Fuji Electric Co Ltd Gas dilution apparatus
JPH0620050B2 (en) * 1987-08-12 1994-03-16 富士電機株式会社 Gas dilution device
JPH055502U (en) * 1991-07-11 1993-01-26 株式会社ユーエイキヤスター Castor with braking device
JPH07153705A (en) * 1994-05-20 1995-06-16 Matsushita Electric Ind Co Ltd Vapor growth device
CN103882409A (en) * 2014-03-13 2014-06-25 中国科学院半导体研究所 Source conveying gas path device with adjustable mixing ratio

Also Published As

Publication number Publication date
JPS63939B2 (en) 1988-01-09

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