JPS61500799A - wafer processing machine - Google Patents

wafer processing machine

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Publication number
JPS61500799A
JPS61500799A JP60500399A JP50039985A JPS61500799A JP S61500799 A JPS61500799 A JP S61500799A JP 60500399 A JP60500399 A JP 60500399A JP 50039985 A JP50039985 A JP 50039985A JP S61500799 A JPS61500799 A JP S61500799A
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JP
Japan
Prior art keywords
wafer
wafer processing
chuck
processing chamber
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60500399A
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Japanese (ja)
Inventor
デイモツク,ジヤツク・エイ
クラーク,ピーター・ジエイ
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Individual
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Individual
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Publication of JPS61500799A publication Critical patent/JPS61500799A/en
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 ウェハ処理機 発明の背景 本発明は一般にウェハ茄工機、殊にスパッタ被覆機の如き減圧下において作業す る性質の機械に関する。[Detailed description of the invention] wafer processing machine Background of the invention The present invention is generally applicable to wafer processing machines, particularly those operating under reduced pressure such as sputter coating machines. Concerning machines of the nature of

従来技術の叙述 従来から特殊なウェハキャリア内に内蔵さrLタウエバがエレベータ羽根によっ てスパッタ仮覆機の塔載ロック機簿内へ連続的に持ち上げられるようなスパッタ 被覆機が提案されてきた。ウェハは羽根によりドアの一部を構成する真窒チャッ ク上へ塔載され巽仝呈の搭載ロック部分へ同かう。ドアは旋回して閉じ、ウェハ を保持するチャックは排気された室内のドロしたレイジースーザン型の回転部材 から搬送される辺縁把狩りリップ坏内ヘウエハを並進させる。搭載ロックステー ションに対向スるレイジースーザンプレート内の開口はプランジャーにより封止 され、塔載ロック部分は比較的シζ低い圧力まで荒引きポンプにより排気される 。適当な低圧状態が得られると封止プランジャーは開いて、高真窒ポンプと連通 した排気された呈の処理部分に対してウェハ上さらす。その後圧力は比較的低圧 に1で下がり、10−3トールのスパッタ圧力までアルゴンで満尺される。レイ ジースーザンが回転すると、それは先に塔載され念ウェハをスパッタガンに対同 するスパッタ位置内へ前進させ、該スパッタガンはその後スパッタ作用によって 先に塔載されたウエハ全被覆するCと:てlる。先に塔載されtウエノ・を被覆 した後、レインースーザンは伝火され之つエノ・全塔載ロック内へ回転させ、そ の後レイジースーザン内の開口は呈の処理部分から冨封され1合載ロック部分は 大気圧にまで引さ上げられる。この時点で真空チャックはクリップ体内へ並進し 、被覆されたウエノ・を拾い上げる。ドアは開放状態のま\旋回し、羽根はウェ ハ?チャックから拾い上げ被覆され之つエノ・をウニ・・キャリヤの元の位置に 戻ス。レイジースーザンは、ウェハ被覆it去る前にウェハが加熱され一連の異 なる材料でスパッタ被覆されることができるように一連の異なるステーションt −Wえ℃いる。Description of prior art Conventionally, the rL tow bar built into a special wafer carrier is moved by elevator blades. Spatter that is continuously lifted into the tower-mounted locking machine of the sputter temporary covering machine. Coating machines have been proposed. The wafer is attached to a genuine nitrogen chuck that forms part of the door by means of a blade. It is mounted on the top of the tank and attached to the loading lock part of Tatsumi Yusei. The door pivots closed and the wafer The chuck that holds the evacuated room is a lazy susan type rotating member Translate the wafer being conveyed from the wafer into the edge gripper. Equipped with lock stay The opening in the lazy susan plate facing the section is sealed by a plunger. The tower lock section is evacuated to a relatively low pressure by a rough pump. . When a suitable low pressure condition is achieved, the sealed plunger opens and communicates with the high nitrogen pump. The wafer is then exposed to the evacuated processing area. After that the pressure is relatively low 1 and flushed with argon to a sputter pressure of 10 −3 Torr. Ray As the Susan rotates, it is placed first and the wafer is transferred to the sputter gun. into the sputtering position, and the sputter gun then sputters by the sputtering action. C to completely cover the wafer previously placed on the tower. It was loaded first and covered with tueno. After that, Rain-Susan rotates the fire into the Eno-Totoro lock, and then After that, the opening inside the lazy Susan is sealed from the processing part and the loading lock part is It is pulled up to atmospheric pressure. At this point, the vacuum chuck is translated into the clip. , pick up the coated ueno. The door remains open and rotates, and the blades remain open. Ha? Pick it up from the chuck and place the covered knife back into its original position in the carrier. Back. Lazy Susan causes a series of changes in which the wafer is heated before it leaves the wafer coating. a series of different stations t so that the material can be sputter coated with -We are here.

かかるウェハ被覆機は1982年1月19日発行の米国特許明細書簡4,311 ,427号に開示されており、同書はここにその全部を#考用として編入されて いる。Such a wafer coater is disclosed in U.S. Patent Specification Letter 4,311, issued January 19, 1982. , No. 427, which is incorporated herein in its entirety as #Koiyo. There is.

従来技術によるスパッタ被覆機がかかえる問題点の一つはそれが比Vβつ複雑で ろるため割高で信頒住が低いことである。ウニ・・全その辺碌部で保持するため のばねクリップ構成はウェハに対して望ましくない応力を生じさせ機械の不当な 破損と休止時間をもたらす虞れがある。One of the problems with conventional sputter coating machines is that they are more complex than Vβ. The reason is that it is relatively expensive and has a low credit rating. Sea urchin...to hold on to all its strengths The spring clip configuration creates undesirable stress on the wafer and can cause undue stress on the machine. This can lead to corruption and downtime.

それ故、もつと複雑でない割安でより信頼性のらるウェハ被覆機全提供すること が望まれる。Therefore, we provide a complete wafer coating machine that is less complicated, less expensive, and more reliable. is desired.

本発明の摘要 不発明の主文る目的は改良されたウエノ・処理機、殊にウニ・・被覆機の如き減 圧下で9作業する処理機を提供することでるる。Summary of the invention The main purpose of the invention is to provide an improved waste treatment machine, especially a waste reduction machine such as a sea urchin coating machine. By providing a processing machine that performs 9 operations under pressure.

不発明の特長の一つく工、開放した底部を経てキャリヤ内に通過し、キャリヤ内 でウエノ・と係合し僅かにウエノ・tiち上げて、ウニ・・キャリヤ内のウニ・ ・の位置全正確に決定する鋸歯′$、荷造体、(よって標準同ウニ・・キャリヤ のスロット内でウエノ・が正確(で割出さnることでろる。One of the inventive features is that it passes through the open bottom and into the carrier. It engages with the Ueno and raises the Ueno slightly, causing the Uno and the Uno in the carrier to rise. ・To precisely determine the position of the sawtooth′$, the packing body, (therefore the standard same sea urchin carrier) Ueno can be determined accurately within the slot of n.

本発明のもう一つの特長、ま排気可能なウエノ・処理室の搭載ロック部分がゲー ト弁によって排気可能な里のウェハ処理もしくは被覆部分から隔離され、ウエノ ・が該ゲート弁の開放したのど部を経て排気可能な室のウニ/・処理部分内へ並 進できろようになつ℃いろことでるる。Another feature of the present invention is that the mounting lock part of the evacuated ueno/processing chamber is The wafer is isolated from the wafer processing or coating area where it can be evacuated by a ・The sea urchins in the chamber can be evacuated through the open throat of the gate valve. I'm going to be able to move on, and I'm going to have a good time.

本発明のもう一つの特長は、ウエノ・を処理チャックに締め付けるためのウエノ ・編付手段がウエノ・からそむぎ被覆材料源1同へ同かい、その結果面付は構造 体の被覆された部分が容易に取除かれ掃除が容易になるような着脱自在の面?備 えていることである。Another feature of the present invention is that the wafer is used to tighten the wafer to the processing chuck. ・The knitting means are the same as Ueno and Somugi covering material sources, and as a result, the imposition is structurally Removable surfaces so that covered parts of the body can be easily removed and cleaned? Preparation This is what is happening.

本発明のもう一つの特長はスパッタ遮へい体がスパッタガンとウエノ・−との間 に配置され、ガンから突き出され工作物により収集されない飛ばされた材料を収 集し、使用中に里の望ましくない部分からウエノ・上に材料が再び飛ぶことが除 去されるという点でるる。Another feature of the present invention is that the sputter shield is provided between the sputter gun and the ueno. to collect blown material ejected from the gun and not collected by the workpiece. This prevents material from flying back onto the surface from undesirable areas during use. Ruru in terms of being removed.

本発明のもう一つの特長は、スパッタ遮へい体がガンから隔った中央部を開口し た端部閉鎖壁を備え、被覆されるウエノ・が中央開口領域とほぼ同一空間に位置 決めされ、被覆されるウエノ・もしくはスパッタ遮へい体上の何れかに飛ばされ 之材料を(ミぼすべて収集することができるようになっていることである。Another feature of the invention is that the sputter shield has an opening in the center separated from the gun. with closed end walls, and the coated material is located approximately in the same space as the central opening area. Sprayed onto either the wafer to be coated or the sputter shield. It is possible to collect all the materials.

本発明のもう一つの特長は、排気可能な室内の点検ポートt−閉じで封するカバ ーから被覆ガンが搬送され、冷却フィンガがカバーから搬送され室内へ延び水蒸 気やその他の凝縮物をその上に凝縮させるようになっている点である。Another feature of the present invention is that the inspection port in the evacuable chamber has a T-closed cover. The coating gun is transported from the cover, and the cooling fingers are transported from the cover and extend into the room to The point is that Qi and other condensates are condensed onto it.

本発明のもう一つの目的は該冷却フィンガがほぼ弧状となっていて点検ポートの カバーから搬送さ几る仮積ガ/と(・1ぼ同心円状にかつ該被覆ガンの外側に配 置されるという点である。Another object of the present invention is that the cooling fingers are generally arcuate so that the inspection port Temporary piles transported from the cover/(・1 concentrically and arranged on the outside of the coating gun) The point is that it is placed.

本発明のその他の特長ならび−C利点は添附図面と共に以下の明細W’に精読す ることによって明らかとなろう。Other features and advantages of the present invention are read carefully in the following specification W' together with the accompanying drawings. This will become clear.

図面の簡単な説明 第1図は本発明の特長を徂み込んだウェハ被覆機の腑視竜略図、$2図は2−2 線で示したM1図の構造体部分の横断面図、第3図は3−3線に沿い矢印方向に 描い7を第2凶の構造の弧太図、第4凶は4−4線に沿い矢印方向疋描いた第2 図の構造の一部の斜視狐犬図、第5図は5−5 @に沿って矢印方向に描いた第 2図の構造の一部の拡大図、第6囚は本発明の被覆機のウエノ・エレベータ羽根 組成坏の側面図、第7図は第1図の被覆機の真空室の塔載ロックならびに蒸着部 分のエム太断面図、第9図は本発明の蒸着室の一部の長手方向?i、断面図、第 10口は被覆@の点検と保守つために垂下スパッタガンが勤ぎ出た点検カバーを 描いた本発明の被覆機の一部の斜視図。Brief description of the drawing Figure 1 is a schematic diagram of a wafer coating machine incorporating the features of the present invention, and Figure 2 is 2-2. A cross-sectional view of the structure part in Figure M1 shown by the line, Figure 3 is along the line 3-3 in the direction of the arrow. Draw 7 is the thick diagram of the structure of the second cross, and the fourth cross is the second cross drawn along the 4-4 line in the direction of the arrow. A perspective fox-dog diagram of a part of the structure shown in Figure 5. An enlarged view of a part of the structure in Figure 2, the sixth figure is the Ueno elevator blade of the coating machine of the present invention. A side view of the composition, Figure 7 shows the tower lock and vapor deposition section of the vacuum chamber of the coating machine in Figure 1. 9 is a longitudinal cross-sectional view of a part of the vapor deposition chamber of the present invention. i, sectional view, no. The 10th port has an inspection cover with a hanging sputter gun working for inspection and maintenance of the coating. FIG. 2 is a perspective view of a portion of the coating machine of the present invention;

実施例の説明 さて第1図には、本発明による特長を組込んだスパッタ被覆機11が示され℃い る。殊に該′lJ覆磯はフランジのつい之カバー13により一端を閉じられ之円 筒形の処理室部分12を備えており、該カバー13;工処理呈の内側ヘスバッタ ″Jft覆ガンを支え搬送する。処理室12の他端部は中央に開口部?備え九端 部閉鎖壁14てより閉じられる。該中央開口は処理室の処理部分全処理機の塔載 ロック部分から遮断するためのゲート弁組成体15により閉じられる。軸方向に 並進するドア16がゲート弁15ののど部の他端を閉め切る。ターボ分子真空ポ ンプ17が処理室12の頂部に座し、導管18を介してその内部と連通している 。Description of examples Referring now to FIG. 1, a sputter coating machine 11 incorporating features according to the present invention is shown. Ru. In particular, the 'lJ cover is a circle whose one end is closed by a cover 13 with a flange. It has a cylindrical processing chamber portion 12, the cover 13; ``Supports and transports the Jft cover gun.The other end of the processing chamber 12 has an opening in the center. The section is closed by the closing wall 14. The central opening is where all the processing machines in the processing chamber are installed. It is closed by a gate valve assembly 15 for isolation from the locking part. axially A translating door 16 closes off the other end of the throat of gate valve 15. turbo molecular vacuum po A pump 17 sits on top of the processing chamber 12 and communicates with its interior via a conduit 18. .

ドア16下万に該ドア16に隣接してウエノ・キャリッジ体19が配置される。A Ueno carriage body 19 is disposed below the door 16 and adjacent to the door 16.

ウエノ・処理機11により処理されるウェハ21は標準的なウエノ・キャリヤ2 2内に搬送され、ウェハキャリッジ体23内の凹所内へ挿入されるが、該ウェハ キャリッジ体23はエレベータ羽根24に対して軸方向に並進し、該エレベータ 羽根24はウエトキャリャ22の底部を経て上へ通過し頂部全通過してそれぞれ のウニ・・を持ち上げ塔載ロックドア16の内側から搬送され之つエノ・チャッ クへ隣妥するように位置決めする。ウェハキャリッジ23は一対の水平案内ロッ ド25上全摺動し、モータ、駆動によるねじ26:でよって案内ロッド25に沿 い勘かされウェハのそれぞれを羽根24上に連続的に前進させウエノ・処理機1 1の間を征復搬送する。The wafer 21 processed by the wafer processor 11 is a standard wafer carrier 2. 2 and inserted into a recess in the wafer carriage body 23, but the wafer The carriage body 23 is axially translated relative to the elevator blade 24 and The blades 24 pass through the bottom of the wet carrier 22, upward, and pass through the entire top of the wet carrier 22, respectively. Lift up the sea urchin and transport it from inside the tower lock door 16. position so that it is adjacent to the The wafer carriage 23 has a pair of horizontal guide rods. The motor drives the screw 26 along the guide rod 25. The wafers are continuously advanced onto the blades 24 and the wafer processing machine 1 Conquer and transport between 1.

今度は第2図についてのべると、ウェハキャリッジ組成体■9の詳細が示されて いる。ウェハキャリッジ体19はキャリッジ部材27を備えて2つ、該部材27 はウェハ処理機11をフロアから叉えるフンーム得造にその端部を固定され次一 対の案内ロッド25上を軸方向に並進する。駆動ねじ26はキャリッジ27と螺 合し、キャリッジ27を案内ロッド25上で駆動させる。駆動ねじ26は従来の ステップモータにより回転させられる。Next, referring to Figure 2, details of wafer carriage assembly ■9 are shown. There is. The wafer carriage body 19 includes two carriage members 27. The end of the wafer processing machine 11 is fixed to the wafer processor 11 from the floor. axially translated on a pair of guide rods 25; The drive screw 26 is connected to the carriage 27. Then, the carriage 27 is driven on the guide rod 25. The drive screw 26 is a conventional Rotated by a step motor.

キャリッジ部材27は矩形の凹所28t−備え、従来のウェハキャリヤ22のほ ぼ矩形の下方ファーム部分を収容するウェハ受は口部分を備えている。典型的な 実施例のばめい、ウェハキャリヤ22は5“ウェハについてはP A 72−5 0 M型でろるか、フルオロウニイブ(Fluorowave )社から市販入 手可能な4“ウェハについてW1PA72−40MFJlでめる。ウェハキャリ ヤ22はその内部にシリコンウェハ32を軸方向に繁合し軸方向に間隔を2いて 配置して収容しかつ保持するために形成されたー別のウェハ収納スロット列31 全備えた外測に曲がった側壁部分29を備えている。典型的な実施例のばめい、 ウェハ間の中心と中心の間の軸方向間隔は0.187“でウェハは0.026“ の厚さを備えている。The carriage member 27 has a rectangular recess 28t, which is similar to that of the conventional wafer carrier 22. The wafer receptacle housing the generally rectangular lower farm portion includes a mouth portion. Typical In the example fit, the wafer carrier 22 is P A 72-5 for 5" wafers. 0 M type, commercially available from Fluorowave Co., Ltd. Use W1PA72-40MFJl for available 4" wafers. Wafer carrier The layer 22 has silicon wafers 32 arranged therein in the axial direction and spaced apart from each other in the axial direction. Another row of wafer storage slots 31 formed for locating, accommodating and holding A fully curved side wall portion 29 is provided. Typical embodiment fit; The center-to-center axial spacing between wafers is 0.187" and the wafers are 0.026" It has a thickness of

標準的なウェハキャリヤ22では、個々のウエノ\保持スロット31はほぼ0. 060″の細万同範囲を個え℃いろ。In a standard wafer carrier 22, the individual wafer holding slots 31 are approximately 0. The same range of 060″ is included in the temperature range.

それぞれのスロット31内に個々のウェハ32を正確に配置してウエノ・間の細 万岨旧4が正確に決定され個々つウェハが0.250インチの厚さkWするエレ ベータ羽根24上に垂直に位置合わせされた状態に正確(・て配置することがで きるようにすることが望ましい。個−のウニ・・32をそれぞれのスロット31 内に正確に配置するために一対のウェハ割出し羽根33がキャリッジ部材27か ら雌送さn、その底部でウエノ・キャリヤ220内側壁に隣接して延びる。それ ぞれの割出し羽根32の上部辺縁部34は第3図の参照誉号35に示した通りほ ぼ鋸歯状に鋸切りされてそれぞれのウエノ・32の底縁部と係合し、ウェハキャ リヤ22内で僅かにウェハ金持ち上げるようにする。羽根33内の鋸歯のピッチ はそれぞれのウエノ・32の望ましい和方向隔りを正確に決定するように大作さ れる。個々のウェハ32は従来のローラの平行整合手段(■示ぜず)によって時 計の6時の位置で大きな整合平担部36と予め整合する。The individual wafers 32 are accurately placed in their respective slots 31 to ensure fine details between the wafers and the wafers. Wanxian wafers are precisely determined and the individual wafers are 0.250 inch thick. It can be placed precisely in vertical alignment on the beta blade 24. It is desirable to be able to do so. 32 sea urchins in each slot 31 A pair of wafer indexing blades 33 are attached to the carriage member 27 in order to accurately position the wafer within the carriage member 27. The female carrier 220 extends at its bottom adjacent to the inner wall of the carrier 220. that The upper edge portion 34 of each indexing blade 32 is approximately as shown in reference numeral 35 in FIG. The serrations are cut to engage the bottom edge of each wafer 32, and the wafer carrier is Make sure to lift the wafer slightly inside the rear 22. Pitch of sawtooth inside blade 33 is designed to accurately determine the desired sum direction spacing of each Ueno 32. It will be done. Individual wafers 32 are timed by conventional roller parallel alignment means (not shown). It is pre-aligned with the large alignment flat part 36 at the 6 o'clock position.

ウェハキャリッジ構造体27は第4図に示した長手方向に向いた薄いフランジ部 分37を備えている。長手方向フランジ37の外側辺像部は参照番号38部分に 横断方向にスロットを設けられ該スロット38により形成されたフランジの党学 田に透明な部分によって形成された直線状のウエノ・割出し茨示列を形成する。The wafer carriage structure 27 has a thin longitudinally oriented flange shown in FIG. It has 37 minutes. The outer side image portion of the longitudinal flange 37 is designated by reference number 38. Partology of the flange transversely slotted and formed by the slots 38 A straight line of transparent parts is formed in the rice field.

スロット38は割出し羽根33の鋸歯状の辺縁部内のA由の間隔もしくはピッチ に等しいピッチ、すなわち開講を備えている。光学読取り装量39はスロットを 設けたフランジ37を1友ぎ、フロアから被覆機11を叉えるフレームに周定し て取りつけられる。ウニ・・キャリッジ組成体27が、光学的に透明な通路が元 学的伝送部分41と光学読取り装置39の党学受元部分420間に得られるよう な位置に並進すると、電気回路が完成しウェハキャリッジ27の並進全停止させ るための出力信号金主みだし、それぞれのウェハはエレベータ羽根24と正薄に 垂直整合した位置に運距児的に前進する。The slots 38 are spaced apart or pitched within the serrated edges of the indexing blades 33. It has a pitch, or opening, equal to . The optical reading load 39 has a slot. The provided flange 37 is connected to the frame that covers the coating machine 11 from the floor. can be installed. The sea urchin carriage composition 27 is formed by an optically transparent passageway. As obtained between the optical transmission part 41 and the optical reading part 420 of the optical reader 39, When the wafer carriage 27 is translated to the desired position, the electric circuit is completed and the translation of the wafer carriage 27 is completely stopped. The output signal for the main output, each wafer is connected directly to the elevator blade 24. Move forward in a vertically aligned position.

今夏は第2図、第5図、第6図2よび第7図について、ウェハ塔載機構金より詳 細に説明することをてする。殊にウェハエレベータ羽根24(・工それぞれのウ ェハ32の底縁部と係合する上部先頭線部43を儒えている。先頭辺縁部・13 は面取りした部分44全備えていて、該部分はウェハ32の辺縁部を面取りした 面44とエレベータ羽根24の伸j自在部分46の内側壁45との間に把持させ る。エレベータ羽根24の側縁部は参照番号46部分を面取りされ、フレーム構 造体51から支持ブラケット52を介して心偉49上に搬送さnたローラ48の 溝・17内に羽根44の辺縁部全璧合させるようにする。ローラ48は羽根24 の垂面運動を案同する。羽根はフレーム51に固定して取り付けられるイリノイ 州エルンノ・−スト(Elmhust )のオリガ(0γigα)社により入手 可能なロンドレスエアンリンダ53によって手直に動かされる。羽根24はステ ンレス鋼婿により密封されたスロット円上シリンダ530軸万同に通過するカッ プリング部材54iCよりシリンダ53円のピストンに取りつげられる。典型的 な例ではロッドレスシリンダ53は羽根24に対して14″の垂直な揚程を与え る。This summer, we will provide detailed information on Figures 2, 5, 6, 2, and 7 from the wafer mounting mechanism. Please explain in detail. In particular, the wafer elevator blade 24 ( It has an upper leading line portion 43 that engages with the bottom edge of the wafer 32. Leading edge 13 has the entire chamfered portion 44, which portion is chamfered at the edge of the wafer 32. It is gripped between the surface 44 and the inner wall 45 of the extensible portion 46 of the elevator blade 24. Ru. The side edges of the elevator blade 24 are chamfered at the reference numeral 46 to improve the frame structure. The roller 48 is conveyed from the structure 51 to the center 49 via the support bracket 52. The entire edge of the blade 44 is made to fit into the groove 17. The roller 48 is the blade 24 It guides the vertical motion of. Illinois where the blades are fixedly attached to the frame 51 Obtained by Olga (0γigα), Elmhust, Canton It is manually operated by a possible ronless air cylinder 53. The blade 24 is Slotted circular cylinder sealed by stainless steel shaft 530 cups passing through the same axis It is attached to the piston of the cylinder 53 yen by the pulling member 54iC. typical In this example, the rodless cylinder 53 provides a vertical lift of 14" to the vane 24. Ru.

羽根24が上昇すると、それはウニ/・32の下方辺縁部に拾い上げ、被覆機1 1の塔載ロック端に1固定して取り付けられ該4=ロツク端から搬送さnるガイ ドレール56内に設けられ友案内スロット55内へ上部万同ヘウエハ32全搬送 する。As the blade 24 rises, it picks up the lower edge of the sea urchin/.32 and coats the coating machine 1. 1 is fixedly attached to the tower-mounted lock end of 1 and is conveyed from the lock end. The entire wafer 32 is transferred to the upper part of the guide slot 55 provided in the guide rail 56. do.

エレベータ羽根24は、ウエノ・32がウエノ・チャンク57のウェハ収容保持 用の人ぎな面58上部にMtするように位置決めされるまでその上万運動全継萩 する。チャックのウェハ受取り面58はガス源と流体連通式に連結された環状の V溝59を偏えている。ウェハ32が近接したとぎにV溝内へ流入するガスは、 ウエノ・をチャック570人ぎな面58万同へ吸入させるベルヌーイ効果をつく りだす。羽根24の伸縮部分46がチャック57の下万円周部と保合するとぎ、 該伸縮部分46f!収縮しウェハ32がチャック57に対して完全に支えられた 溝底体内へ移動することを可能にする、即ちウエノ・領域はチャックの大きな面 58の領域と完全に同一仝間に広がり、ウェハの円周がチャック57の外周に対 してほぼ0.020インチだレナへこむ。羽根24がその最上域にまで上昇しウ ニ・・がチャックに対して過当に位置決めされると、ガスのV壽へ至る項つ的な 流れは過当な升−によって終結し、真仝状態がV溝上に引き入れられウェハ32 がチャック57の大きな面58に対して保持される。The elevator blade 24 accommodates and holds wafers such as Ueno 32 and Ueno chunk 57. Until it is positioned so that Mt is on the upper part of the human side 58, the upper movement is continued. do. The wafer receiving surface 58 of the chuck has an annular shape connected in fluid communication with a gas source. The V groove 59 is biased. The gas flowing into the V-groove as soon as the wafer 32 approaches is Creates a Bernoulli effect that inhales Ueno into Chuck 570 people and 580,000 people. Start. When the telescopic portion 46 of the blade 24 is engaged with the lower circumferential portion of the chuck 57, The telescopic part 46f! The wafer 32 is completely supported against the chuck 57 by shrinking. The large surface of the chuck allows for movement into the groove bottom body, i.e. 58, and the circumference of the wafer corresponds to the outer circumference of the chuck 57. It's almost 0.020 inch. When the blade 24 rises to its uppermost area, If the 2... is excessively positioned with respect to the chuck, there will be a problem that will lead to the gas V-shu. The flow is terminated by the excess square and the true state is drawn onto the V-groove and the wafer 32 is held against a large surface 58 of chuck 57.

その後、羽根はウェハキャリヤ’tMて第2品に示すそれの最下方行程範囲まで 食方へ撤退する。Thereafter, the blade is moved to the wafer carrier's lowermost travel range as shown in the second item. Retreat to food.

真空チャック57からウェハ32を取り外すことが望まれるばろいには、エレベ ータ羽根24が第7図に示し之その最上部行程範囲にまで上昇し、V罵59はガ スが流れるように加圧され、羽根24はT1に撤退しウェハ32は重力によって 巣5図に示した保持位置内へと落下する。羽根24はウェハ32と共に案内スロ ット55を経てウェハキャリヤ22のそれぞれのスロット31内へとT1に撤退 する。When it is desired to remove the wafer 32 from the vacuum chuck 57, an elevator The motor blade 24 is raised to its uppermost stroke range shown in FIG. The pressure is applied so that the gas flows, the blade 24 retreats to T1, and the wafer 32 is moved by gravity. The nest falls into the holding position shown in Figure 5. The blade 24 is inserted into the guide slot along with the wafer 32. 55 into the respective slots 31 of the wafer carrier 22 to T1. do.

今度は第7図と第8図についてみると、ウェハチャックの働きがより詳細に示さ れている。殊にチャツク57−エ円形のドア構造体61から搬送され、該構造体 61自身はロッド63を弁して駆動プレート62から搬送される。Next, if we look at Figures 7 and 8, the workings of the wafer chuck will be shown in more detail. It is. In particular, the chuck 57 is conveyed from the circular door structure 61 and 61 itself is conveyed from the drive plate 62 via the rod 63.

ウェハチャック57はドア61内の中央開口を経て軸方向にロッド64とチャッ ク57を並進さぜるためのエアシリンダ65内へ入る軸方向に並進するロッド上 に搬送される。作動ロッド64はOリング66を介してドア61に対して真空封 止され、ロッド64上lて乗つドア61から搬送される直線状ボールベアリング 組成体67によってロッド64がドア61に対して正確に軸方向へ並進する作用 が得られる。ドア61と垂下ウェハチャック57は、駆動ロンドロ9を介して駆 動プレート62上で作業するエアシリンダ68によって軸方向に並進させられる 。作動プレート62は一対の案内ロッド71.72上を案内され、蒸着室12の 塔載ロック端にしっかり取付けられ之プレート75から搬送される。案内ロッド 71.72の外側端部は安定プレート76によって共に連に吉される。The wafer chuck 57 connects to the rod 64 in the axial direction through the central opening in the door 61. On the rod that translates in the axial direction that enters the air cylinder 65 for translating the engine 57. transported to. The actuating rod 64 is vacuum-sealed to the door 61 via an O-ring 66. A linear ball bearing is conveyed from a door 61 that is stopped and rests on a rod 64. The action of the assembly 67 to accurately axially translate the rod 64 relative to the door 61 is obtained. The door 61 and the hanging wafer chuck 57 are driven via the drive roller 9. axially translated by an air cylinder 68 working on moving plate 62 . The actuating plate 62 is guided on a pair of guide rods 71 and 72 and is positioned in the deposition chamber 12. It is securely attached to the tower lock end and transported from the plate 75. guide rod The outer ends of 71 and 72 are held together by a stabilizing plate 76.

環状の装着プレート72はゲート弁15のフランジ付き開ロア9上に封止されO IJング81によって該開口に封止される。装着板78は参照省号82部分を中 心部に端ぐりされ、ドア61を装着プレート78に対して封止する次めにドア6 1により搬送さrした0リングを収めるための座を提供するようにする。An annular mounting plate 72 is sealed onto the flanged open lower portion 9 of the gate valve 15. The opening is sealed by an IJ ring 81. The mounting plate 78 is located in the reference ministry number 82 part. The core is counterbored to seal the door 61 against the mounting plate 78. 1 to provide a seat for storing the O-ring conveyed.

ゲエハ締付はリング85(エウェハチャック57と同心円状に配置されその内部 でチャックの円周辺縁部を同心・円状に収納するための端ぐりを3照番号86部 分に備えている。端ぐり領域86は、ウェハ32の外周と係合し、チャックが排 気された室内で働くことができるばあいにそうでるるように保持溝59を介して 付与され之真窒がないばろいにウェハをチャック57に対して締め付ける内側唇 部分を備えている。締め付はリング85は直線状のポールベアリング組成体88 を通過する軸方向ンこ向いた複数のステンレス鋼ロッド87上に搬送され、装着 ブL/ −ドア 8内のボア内に挿入される。ばね89はロッド87を取囲むよ うにして同軸状に取付けられ、ロッド87の端内へねじ込まれたねじ91によっ てロッドに捕獲される。ばね89は締付げリング85をウェハチャック57の位 置方向へばね偏倚させる働きを行う。円筒形キャップ92はロッド87上に気密 に封止され、装着ブL’−ドア8から搬送され、ばね89と摺動ロッド87を遁 納する。The wafer tightening is performed by a ring 85 (arranged concentrically with the wafer chuck 57 and inside the ring 85). In order to store the circumferential edge of the chuck concentrically and circularly, there are 3 counterbores (number 86). Be prepared in minutes. The counterbore region 86 engages the outer periphery of the wafer 32 and allows the chuck to eject. via the retaining groove 59, as is the case when working in a ventilated room. An inner lip that clamps the wafer against the chuck 57 without any additional moisture It has portions. For tightening, the ring 85 is a straight pole bearing assembly 88. It is conveyed onto a plurality of axially facing stainless steel rods 87 passing through the L/- is inserted into the bore in the door 8. Spring 89 surrounds rod 87 The screws 91 are mounted coaxially in the same manner and are screwed into the end of the rod 87. and is captured by the rod. The spring 89 holds the tightening ring 85 at the wafer chuck 57. The function is to bias the spring in the position direction. A cylindrical cap 92 is hermetically sealed onto the rod 87. The spring 89 and sliding rod 87 are sealed and transported from the mounting block L'-door 8. pay.

締め付はリング85は完全に後退し之位置では装着プレート78の端ぐり領域9 3内に嵌合する。When tightening, the ring 85 is fully retracted in the counterbore area 9 of the mounting plate 78. Fits inside 3.

ウェハチャック57はカップ状の絶縁部材を弁して外側の環状部分95から隔っ た内側環状部分94を備えている之めチャックの外側部分95は室とドア61の 電位とは独πした電位で作業することができる。独πの電位をチャック部分95 ・に印加するために導電ロッド97はチャック部分95から軸方向ボア98を経 て軸方向に同いた気密に封止さnた円筒形キャップ部分99内へ軸方向に垂下す る。キャップ99は参照番号101部分を横方向に穿孔され、絶縁部キャップ1 02がポア101上に封止される。導゛通ロッド103は杷縁体本体102を、 1イて延び、それの内貢端已に4電ブラシ104を備えており、該ブラシ104 はロッド97上に乗り室内のボアその他の構造体に印加された電位とは独豆に偏 倚電位をロッド、従って外側チャック部分95:/C印加する。The wafer chuck 57 is separated from the outer annular portion 95 by a cup-shaped insulating member. The outer portion 95 of the chuck has an inner annular portion 94 that connects the chamber and the door 61. It is possible to work with a potential that is different from the electric potential. Part 95 that chucks the potential of π A conductive rod 97 passes from the chuck portion 95 through an axial bore 98 to apply an electric current to the depending axially into an axially hermetically sealed cylindrical cap portion 99. Ru. The cap 99 is laterally perforated at the reference numeral 101, and the insulation cap 1 02 is sealed on the pore 101. The guiding rod 103 connects the rod body 102 to 1, and is provided with four electric brushes 104 at its inner end, and the brushes 104 is on the rod 97 and is uniquely different from the potential applied to the bore and other structures in the chamber. A bias potential is applied to the rod and thus to the outer chuck portion 95:/C.

1980年8月26日発行の米国特許明細書簡4.219,397号に開示て几 だものの如き従来設計によるマグネトロンスパッタガン105はここにその全部 を参考用として組み込んでいるけれども、チャック57と軸方向に整合するよう にドア61のそれからゲート弁15の対同側に呈12内に配置される。As disclosed in U.S. Patent Specification Letter No. 4.219,397, issued August 26, 1980. The magnetron sputter gun 105, which has a conventional design, is all here. Although it is included for reference, it is The gate valve 15 is disposed in the display 12 on the opposite side of the gate valve 15 from that of the door 61.

スパッタガン105はガン1o5から飛ばされるはずの材料から成る環状陰極部 材106を備えてhる。陰極106は地電位に対して−VCの電位で作業する。The sputter gun 105 has an annular cathode section made of the material to be sprayed from the gun 1o5. The material 106 is provided. The cathode 106 operates at a potential of -VC relative to ground potential.

ディスク形の陽極107は環状の陰極106の中央に配置され、地電位に対して +Vαの電位で作業する。絶祿体108、lO9は、それぞれ陽’Gi 107 と陰1106をガラス球から叉える。ステンレス鋼によるほぼカップ状のスパッ タ遮へい゛亀Ti1lOはスパッタガン105上に位置するように配置され、地 電位で作業する。スパッタ遮へいは外曲りの唇部分111を備え、スパッタガン の従来のカップ状地遮へい電極112の前面から搬送される。典型的な笑乃例で はスパッタ遮へい11’Oはステンレス鋼から農作され、カップ状の遮へい部材 110の底壁内に中火開口部113を儂えている。スパッタ遮へい110は複数 のねじ114を介してガン遮へい112から搬送される。A disk-shaped anode 107 is placed in the center of the annular cathode 106 and is connected to the earth potential. Work at a potential of +Vα. Zetsuitai 108 and lO9 are respectively Yang'Gi 107 and the shade 1106 is removed from the glass bulb. Approximately cup-shaped spat made of stainless steel The metal shield turtle Ti11O is placed above the sputter gun 105, and Work with electrical potential. The spatter shield has an outwardly curved lip portion 111, and The conventional cup-shaped shielding electrode 112 is conveyed from the front surface thereof. A typical example of laughter The spatter shield 11'O is a cup-shaped shielding member made of stainless steel. A medium heat opening 113 is formed in the bottom wall of 110. There are multiple sputter shields 110. from the gun shield 112 via screws 114.

ゲート弁115はヴイトンボンネット密對材f儒えた10046−PE40ss 型の如き従来の設計によるもので24ボルト(厘流〕ソレノイドにより働く。該 ゲート弁はコロラド州、ボールダー(Boulder+ Co1orado ) のHF2社より市販され入手できる。ゲート弁115は室の塔載ロック部分11 7と排気室12のウェハ処理部分118との間((ガス遅過させるためののど部 116ヲ(Itijえている。可動式ゲート弁部材119は弁本11115のの ど部分116を経て横断方向へ並進し、ウェハ処理部分118から塔載ロック部 分117を遮断する。Gate valve 115 is made of Louis Vuitton bonnet seal material 10046-PE40ss It is of a conventional design, such as a type, and is powered by a 24 volt solenoid. The gate valve is from Boulder, Colorado. It is commercially available from HF2 Company. The gate valve 115 is connected to the tower-mounted lock portion 11 of the chamber. 7 and the wafer processing section 118 of the exhaust chamber 12 ((a throat section for gas retardation) The movable gate valve member 119 is attached to the valve body 11115. from the wafer processing section 118 to the tower locking section. Minute 117 is cut off.

作業中、ゲート弁15が閉じるとドアは開放位置へ後退し、エアシリンダにより 後退させられた垂下チャック57は完全に後退した位置へ後退する。処理さるべ きウェハ32は先に述べたようにエレベータ羽根24によってチャック57のウ ェハを受け取る大きな面58上へ塔載され環状ill!59上に引き込まれた真 空を介してそこへ保持される。その後ドア61はエアシリンダ68の作用によっ て閉じられると共にOす/グ83は装着プレート78の凹んだ座部分82と密封 係合しか(して室のドア部分を密封する。ドアが密封され終ると、チャックは室 の塔載ロック部分117内へ僅かに前進し、締め付はリング85をしてウェハ3 2の周斥部と係合させウェハをチャック57へ保持させる。チャック57が締め 付はリング85と締め付は関係に持ち来たされると放射方向((向いたばね塔載 のボールベアリング151は、チャック57の外周縁部で、締め付はリング85 の内側周縁部と参照番号122の部分で係合し電気接触する。このことによって 碓め付げリング、チャックおよびウェハがプラン104を介して印加されたバイ アス電位と同じ電位で作業するという効果が保証される。猾め付はリング85は 個々の案内ロッド87の端部を包囲するようにして配置された絶縁さねたワンヤ 123を介して室壁と案内ロッド87から電気的t・て絶縁されるつウェハ32 をチャック57に締め付けた状態で侵械的荒引きポンプは塔載ロック室117内 へ連結され、塔載ロック室117を減圧にまで排気する。室117の塔載ロック 部分内に適当な減圧が実現すると、ゲート弁115が作動し、ゲート弁部材11 9がのど部分116から撤退し、排気管18を介して室と連通するターボ分子ポ ンプ17を介してほぼ高真空状態にまで先に排気されてた室のウェハ処理部分1 18と連通ずるようにのど部を開く。はぼ数秒以内にウェハ処理室118と連通 塔載ロック部分117は5X10−’ トールの比較的低圧にまで排気される。During work, when the gate valve 15 closes, the door retreats to the open position, and the air cylinder closes the door. The retracted hanging chuck 57 retracts to a completely retracted position. Processing As mentioned above, the wafer 32 is moved to the top of the chuck 57 by the elevator blade 24. The ring is mounted on a large surface 58 that receives the wafer! 59 Makoto drawn above It is held there through the sky. Thereafter, the door 61 is opened by the action of the air cylinder 68. When closed, the opening plate 83 is sealed with the recessed seat portion 82 of the mounting plate 78. Once the door is sealed, the chuck will seal the chamber door. The wafer 3 is slightly advanced into the locking part 117 of the wafer 3, and the ring 85 is tightened. 2 to hold the wafer on the chuck 57. Chuck 57 is tightened When attached, the ring 85 and the tightening are brought into relationship in the radial direction ((the spring tower mounted facing The ball bearing 151 is located at the outer peripheral edge of the chuck 57, and is tightened by the ring 85. 122 to make electrical contact with the inner periphery of the holder. By this The clamping ring, chuck and wafer are applied via plan 104. The effect of working at the same potential as the ground potential is guaranteed. Ring 85 is with clasp. An insulating serpentine ring placed around the end of each guide rod 87. The wafer 32 is electrically insulated from the chamber wall and the guide rod 87 via 123. With the invasive roughing pump tightened to the chuck 57, the invasive roughing pump is The tower lock chamber 117 is evacuated to reduced pressure. Room 117 tower lock Once a suitable vacuum is achieved within the section, the gate valve 115 is actuated and the gate valve member 11 is activated. 9 withdraws from the throat section 116 and connects the turbomolecular port which communicates with the chamber via the exhaust pipe 18. The wafer processing section 1 of the chamber had previously been evacuated to a substantially high vacuum condition via the pump 17. Open the throat so that it communicates with 18. Communication with wafer processing chamber 118 within a few seconds The tower lock section 117 is evacuated to a relatively low pressure of 5X10-' Torr.

ターボ分子ポンプ117は機械的真空ポンプによりバックアップされる。その後 、処理室118はアルゴンのような適当なスパックガンでほぼ10−3)−ルの スパッタ圧にまで満たされる。ゲート弁部材119がゲート弁15内1(撤退し た後、ウェハチャック57はエア7リンダ65とロッド64によりスパッタ遮へ い110の中央部を開口した底壁125に密接した位置まで前進させられる。典 型的な実施例のばあい、クエー・32から端壁125へ至る軸方向間溝はほぼ0 .100インチである。更に、ウェハ32の領域はスパッタ遮へい110内の中 央開口113の断面領域とほぼ同一空間にあるためスパッタガンから飛ばさ乙た 材料がすべてウェハ、締付げリング85のさらされた部分もしくはスパッタ遮へ い110の内表面の同れかに収果されるようになる。スパツタ力式では、イオン 化プラズマ放電は排気された室内で点火される。プラズマ放電の電位は地て対し て僅か((正で、地電位で作業しプラズマに対してさらされる構造部分がスパッ タ作用を経験できるようにしである。構成がスパッタ遮へい110を備え、また ウェハが遮へい110内で中央開口113をほぼ閉じ切るように位置決めされる と、材料をウェハ上に再び飛ばす作用はほぼ制御される、即ち遮へい110の内 部から再び飛ばされた材料はウェハ32上へ飛ばすことが可能になる。このため 、バルブ本体15とその他の部品を含む室の他の部分から再び飛ばされた材料に よって飛ばされた材料がウェハ上に汚染する危険が避けられる。Turbomolecular pump 117 is backed up by a mechanical vacuum pump. after that , the treatment chamber 118 is filled with approximately 10-3) liters of gas using a suitable spackle gun, such as argon. Filled to sputtering pressure. The gate valve member 119 is inside the gate valve 15 (withdrawn). After that, the wafer chuck 57 is shielded from spatter by the air cylinder 65 and rod 64. The central part of the cover 110 is advanced to a position where it is in close contact with the bottom wall 125 which is open. Noriyoshi In the exemplary embodiment, the axial groove from the quay 32 to the end wall 125 is approximately zero. .. It is 100 inches. Furthermore, the area of wafer 32 is located within sputter shield 110. Since it is located in almost the same space as the cross-sectional area of the central opening 113, the sputtering gun If all the material is on the wafer, on the exposed part of the clamping ring 85 or on the spatter shield The fruit will be harvested on the same inner surface of 110. In the spatuta force method, ion The plasma discharge is ignited in an evacuated room. The potential of plasma discharge is relative to the ground. (Positive, the parts of the structure exposed to the plasma when working at earth potential are This is so that you can experience the action. The configuration includes a sputter shield 110 and The wafer is positioned within the shield 110 to substantially close the central opening 113. , the action of throwing the material back onto the wafer is substantially controlled, i.e. within the shield 110. Material that has been blown off again from the section can be blown onto the wafer 32. For this reason , to the material blown away again from other parts of the chamber, including the valve body 15 and other parts. The risk of contamination of the wafer with blown material is thus avoided.

ウェハ32が所望の厚さにスパッタ被覆され終った後で、プラズマは消されウェ ハとチャックはエアシリンダ65と/ギフト64を介して室の塔載ロック領域1 17内へ撤退する。ゲート弁15はその後間じて室のウエノ・処理部分118内 に高真空状態を維持するために閉じられ、真空状態は溝59を介してチャック5 7上に引き入れられる。塔載ロック室は大気圧まで弛緩し、ドア61は開き先に 述べたよ5にウエノ・をウエノ・エレベータ羽根24上へおろす。典型的な作業 順序ではウエノ・は室内へ塔載されスパッタ砥覆され2分経ってウェハキャリヤ 29に復帰することができる。After the wafer 32 has been sputter coated to the desired thickness, the plasma is extinguished and the wafer 32 is sputter coated to the desired thickness. Ha and the chuck are installed in the tower lock area 1 of the chamber via the air cylinder 65 and the gift 64. Retreat to within 17. The gate valve 15 then closes the urethane/processing section 118 of the chamber. The chuck 5 is closed to maintain a high vacuum state through the groove 59. 7 will be pulled in. The tower lock chamber relaxes to atmospheric pressure, and the door 61 opens. As mentioned in step 5, lower the Ueno onto the Ueno elevator vane 24. typical work In order, the wafer was loaded into the chamber, sputtered and removed, and after 2 minutes, the wafer was transferred to the wafer carrier. It is possible to return to 29.

今度は第9図について述べると真空室12のウェハ処理部分118が示されてい る。殊に、円筒室12は参照番号13@分で外側に曲がっており点検ポート12 6を提供し、該ポートを経てスパッタガン105が室12内に軸方向に挿入され る。点検用ポート126は、Oリング128を担う中央部が凹んだ点検カバーに より閉じられ密封され、フランジ13に対して空缶性を与える。スパッタガン1 05は凹角のカバープレート127の内側端から搬送される。中空の環状冷却フ ィンガ128は、点検カバー127の凹角部分を包囲するように室内に配置され 、冷却フィンガ1280項状の円部と液体窒素の如き冷却液源(図示せず)との 間に流体連通を提供する流体導管を介して外側にフランジをつげたカバー127 の部分から搬送される。導管129はカバープレート127内の軸方向ボア18 1を通過し、環状の封止ワ7ヤ132を介してカバー127に気密に封止される 。)Oリング苫封材133.134はワ/ヤ132を導管129に対して、また ワシャ132をカバー127に対してそれぞn封止するために設けられるっ作業 中、冷却フィンガ128は液体窒素で満たされ、フィンガ128の外側。Now referring to FIG. 9, the wafer processing section 118 of the vacuum chamber 12 is shown. Ru. In particular, the cylindrical chamber 12 is bent outwardly at the reference numeral 13@min and the inspection port 12 6, through which the sputter gun 105 is axially inserted into the chamber 12. Ru. The inspection port 126 is located on an inspection cover with a recessed center portion that supports the O-ring 128. It is more closed and sealed, giving the flange 13 empty can properties. Sputter gun 1 05 is conveyed from the inner end of the concave cover plate 127. Hollow annular cooling fan The finger 128 is arranged indoors so as to surround the recessed corner portion of the inspection cover 127. , a cooling finger 1280-shaped circular portion and a cooling liquid source (not shown) such as liquid nitrogen. a cover 127 flanged outwardly through a fluid conduit providing fluid communication therebetween; It is transported from the Conduit 129 extends through axial bore 18 in cover plate 127. 1 and is hermetically sealed to the cover 127 via an annular sealing wire 132. . ) O-ring seals 133 and 134 connect wire 132 to conduit 129 and A work provided for sealing each washer 132 to the cover 127 Inside, cooling finger 128 is filled with liquid nitrogen and outside of finger 128.

壁の温度を液体窒素温度附近の温度に近づけ水蒸気やその他の凝縮物をその上に 凝縮させ、か(してそれらを処理室のウェハ処理部分118内の雰囲気から除去 する。Bring the temperature of the wall to near liquid nitrogen temperature, allowing water vapor and other condensate to rise above it. condensate and remove them from the atmosphere within the wafer processing portion 118 of the processing chamber. do.

今度は第10図について述べると点検カバー127)士その蚕下冷却フィンガ1 28とスパックガン105と共(c1直角ブラケット136を(径て摺動ブロッ ク135がら搬送さnる。ブラケット136の脚部137は摺動ブロック135 に旋回自在にピンで止められ、ビン139を通過する垂直@138のまわりに回 転する。摺、動ブロック135は水平面に配置され、その各々が円筒形室12と 環状フランジ13の回転軸に平行となっている一対のステンレス鋼製の案内ロッ ド141上を摺動し該ロッド141によって案内される。案内ロッド141の対 内端は支持ブロック142によりフレームに係止さnる。Next, referring to Figure 10, the inspection cover 127) The underside cooling finger 1 28 and spack gun 105 (c1 right angle bracket 136 (diameter) and sliding block 135 is transported. The leg portion 137 of the bracket 136 is a sliding block 135 is pivotably pinned to and rotates around the vertical @138 passing through the bin 139. Turn around. The sliding and moving blocks 135 are arranged on a horizontal plane, each of which has a cylindrical chamber 12 and A pair of stainless steel guide rods parallel to the axis of rotation of the annular flange 13. The rod 141 slides on the rod 141 and is guided by the rod 141. Pair of guide rods 141 The inner end is secured to the frame by a support block 142.

ウェハ被;7!vaxlの保守と掃除は、ウェハ処理室を大気圧:・てまで地理 させ、点検カバープレート127を案内ロッド141上で円筒形室12から摺動 し去ることによって容易になる。その後、カバープレートは垂下ガンと共(て軸 138のまわりに回転させることができるため、スパッタガン105に対する接 近を容易にし、陰甑を取り替え諸々の部品、殊:・τスパッタ遮へい材110と 冷却フィンガ128を掃除することが容易になる。同様にして今度は第8図につ いて述べると、点検カバー127が開くと、締付はリング85に容易に接近する ことができる。Wafer covered; 7! Maintenance and cleaning of VAXL requires keeping the wafer processing room at atmospheric pressure. and slide the inspection cover plate 127 out of the cylindrical chamber 12 on the guide rod 141. It becomes easier by leaving it behind. Then the cover plate is attached to the hanging gun (with the shaft). Since it can be rotated around the sputter gun 105, it can be rotated around the Various parts, especially: τ sputter shielding material 110 and Cleaning the cooling fingers 128 becomes easier. In the same way, this time for Figure 8. In other words, when the inspection cover 127 is opened, the tightener easily approaches the ring 85. be able to.

締付はリング、殊にスパッタガフ105方向に向いたその部分は飛ばされた材料 で相当被覆されるため、掃除のために締付はリング85の被覆された部分を取除 くことが望ましい。このことは、締付はリング85の内側のステンレス泗部分1 43をリング85の残余部分から取り外すことによって達成できる。ねじ144 を取外すと掃除と取をえのため(てリング143を取外すことが可能(Cなる。The tightening is done by a ring, especially the part facing the direction of the sputter gaff 105, where the spattered material is removed. The covered part of the ring 85 must be removed for cleaning. It is desirable that This means that the tightening is done by the stainless steel part 1 inside the ring 85. 43 from the remainder of the ring 85. screw 144 Once removed, the ring 143 can be removed for cleaning and removal (C).

本発明によるスパッタ被1磯11の利点は1、機蝋の動作時間が相当改善される ように保守が容易になる点、 2、機械が相当単純化さnその結果、機械がこnまでよりも故障しにくくなり、 かくして動作時間が改善されそれに付随して製造費が小さくなるという点、であ る。The advantage of the sputtering plate 11 according to the present invention is 1. The operating time of the machine wax is considerably improved. This makes maintenance easier, 2. Machinery has become considerably simpler, and as a result, machines are less likely to break down than before. Thus, the operating time is improved and manufacturing costs are concomitantly reduced. Ru.

1g−5 ig−6 Fig−8 国際調査報告 Imwn+IIo11mlAltllcaliwH@FCτ/υSε4/C2E 61g-5 ig-6 Fig-8 international search report Imwn+IIo11mlAltllcaliwH@FCτ/υSε4/C2E 6

Claims (12)

【特許請求の範囲】[Claims] 1.ウエハ列を軸方向に整合させ軸方向に間隔をとって配置して保持するための スロットを備えた側壁と、該ウエハの底部と頂部内にウエハ拾い上げ羽根が通過 し、ウエハを該ウエハキャリヤの内外へ移動させるための開口を備えた形式のウ エハキャリヤカセットであって、該ウエハキャリヤカセットのそれぞれの搬送ス ロット内にウエハを正確に位置決めするための方法において、該ウエハキャリヤ の開いた底部を経て正確に決定されたピッチで手段を挿入して割出しを行ない、 該ウエハキャリヤ内の該スロットのそれぞれ一つ内に該ウエハの底縁部を拾い上 げて位置決めし、該羽根による該ウエハの運動が使用中容易になるようにしたこ とを特徴とするウエハ位置決め方法。1. for axially aligning and axially spacing rows of wafers. A side wall with a slot and a wafer pick-up vane passing through the bottom and top of the wafer. and a type of wafer with openings for moving wafers into and out of the wafer carrier. a wafer carrier cassette, each transfer stage of the wafer carrier cassette; In a method for accurately positioning wafers within a lot, the wafer carrier indexing by inserting the means at a precisely determined pitch through the open bottom of the Pick up the bottom edge of the wafer into each one of the slots in the wafer carrier. and position the wafer by the blades to facilitate movement of the wafer during use. A wafer positioning method characterized by: 2.頂部と底部が開きウエハを保持するために側壁上にスロットを有するウエハ キャリヤ内のウエハがウエハ処理ステーションに対してウエハキャリヤ間を往復 搬送される形式のウエハ処理機において、 底部からウエハキャリヤを横方向に通過しウエハと係合しウエハ処理ステーショ ンに対してウエハを搬送するウエハ拾い上げ手段と、該ウエハキャリヤの底壁を 経て延び該ウエハの底縁部と係合し該ウエハを僅かに持ち上げそれぞれのウエハ 保持スロット内でそれらの軸方向位置を正確に決定し、その際ウエハ拾い上げ羽 根による運動が使用中容易になる割出し手段とから構成されることを特徴とする ウエハ処理機。2. Wafers with slots on the sidewalls to hold the wafer open at the top and bottom Wafers in carriers are shuttled between wafer carriers to wafer processing stations In a wafer processing machine that is transported, Passes laterally through the wafer carrier from the bottom and engages the wafer into the wafer processing station. a wafer picking means for transporting the wafer relative to the wafer carrier; and a bottom wall of the wafer carrier. and engages the bottom edge of the wafer to slightly lift the wafer and separate the wafer from each other. Accurately determine their axial position within the holding slot while using the wafer pick-up vanes. and an indexing means which facilitates movement by the roots during use. Wafer processing machine. 3.該割出し手段がその上縁に沿い配置された鋸歯状構造を備えた割出し部材を 備え、該鋸歯のピッチが鋸歯状構造により係止され持上げられたウエハの軸方向 間隔を正確に決定するようなものであることを特徴とする請求の範囲第2項に記 載のウエハ処理機。3. The indexing means includes an indexing member having a serrated structure disposed along an upper edge thereof. and the pitch of the sawtooth is locked by the sawtooth structure in the axial direction of the lifted wafer. According to claim 2, the method is such that the spacing is accurately determined. Wafer processing machine included. 4.ウエハが減圧下にある排気可能なウエハ処理室内で処理され、該ウエハ処理 室がその壁内にウエハ点検ポートを備え形式のウエハ処理機において、ウエハ処 理室のウエハ点検ポートを閉じ密封するドア手段と、該ドア手段から搬送されそ れと共に運動し処理のためにウエハを所定位置に保持するためにウエハ処理室内 で働くウエハチャック手段と、それののど部分を横切ってゲート部材を動かすこ とによってウエハ処理室の処理部分に対してウエハ処理室の搭載ロック部分を遮 断し、該のど部分がウエハ処理室の該塔載ロック部分と処理部分との間に配置さ れる排気可能室内のゲート弁手段と、該ゲート部材を該のど部分から並進させる ことによって該ゲート弁手段を開かせるための手段と、該チャック手段と作業上 関連し該チャック手段とウエハを該室の該塔載ロック部分から該ゲート弁手段の 開いたのど部内へ並進させるためのチャック並進手段とから成ることを特徴とす るウエハ処理機。4. The wafer is processed in an evacuated wafer processing chamber under reduced pressure; In a wafer processing machine where the chamber has a wafer inspection port in its wall, the wafer processing door means for closing and sealing a wafer inspection port in a laboratory; inside the wafer processing chamber to move with the wafer and hold the wafer in place for processing. a wafer chuck means working in the wafer chuck means and moving the gate member across the throat thereof; The mounting lock part of the wafer processing chamber is shielded from the processing part of the wafer processing chamber by and the throat portion is located between the tower lock portion and the processing portion of the wafer processing chamber. gate valve means within the evacuable chamber and translating the gate member from the throat portion; means for opening said gate valve means, said chuck means and operational means; associated with said chuck means and wafer from said tower lock portion of said chamber to said gate valve means; and chuck translation means for translation into the open throat. Wafer processing machine. 5.該チャック並進手段が該チャックとウエハを該ゲート弁手段の開いたのどを 経てウエハ処理室の該処理部分内へ並進させることを特徴とする請求の範囲第4 項に記載のウエハ処理機。5. The chuck translation means moves the chuck and wafer through the open throat of the gate valve means. claim 4, wherein the wafer is translated into the processing portion of the wafer processing chamber through the The wafer processing machine described in section. 6.材料を該チヤツク手段から搬送されたウエハ上へ飛ばすためのウエハ処理室 の該処理部分内のスパツタガン手段を備えることを特徴とする請求の範囲第4項 に記載のウエハ処理機。6. a wafer processing chamber for blowing material from the chuck onto the transported wafer; Claim 4 further comprising sputter gun means within said processing portion of the apparatus. The wafer processing machine described in . 7.ウエハが減圧下にある排気可能なウエハ処理室内で処理され、該ウエハ処理 室がその壁内にウエハ点検ポートを備えている形式のウエハ処理機において、ウ エハ処理室のウエハ点検ポートを閉じ密封するドア手段と、減圧下にあるウエハ 処理室内にイオン化するプラズマ放電をつくり出すための陽極と陰極を備え、材 料をそれの該陰極からウエハ処理室内へ飛ばすためのスパツタガン手段と、ウエ ハ処理室内に工作物を位置決めし該スパツタガン手段から飛ばされた材料の被覆 を受けとるチヤツク手段と、ウエハ処理室壁から隔たり、該スパツタガンと該チ ヤツク手段により位置決めされた工作物との間にプラズマを包囲し、該スパツタ ガン手段から突出し工作物により収集されない飛ばされた材料を収集するための スパツタ遮へい手段とから成ることを特徴とするウエハ処理機。7. The wafer is processed in an evacuated wafer processing chamber under reduced pressure; In a type of wafer processing machine where the chamber has a wafer inspection port in its wall, A door means for closing and sealing the wafer inspection port in the wafer processing chamber and the wafer under vacuum. Equipped with an anode and a cathode to create an ionizing plasma discharge inside the processing chamber, a sputter gun means for spraying material from said cathode thereof into a wafer processing chamber; C. Positioning the workpiece within the processing chamber and coating the material blown from the sputter gun means. chuck means for receiving the sputter gun and the chuck means separated from the wafer processing chamber wall; The spatter is surrounded by a plasma between the workpiece and the workpiece positioned by the yoke means. for collecting blown material that protrudes from the gun means and is not collected by the workpiece; A wafer processing machine comprising a spatter shielding means. 8.該スパツタ遮へい手段が該スパツタガン手段から飛ばされる材料の突出部を 包囲し、該スパツタガン手段の末端部にある内側に向いた中央部が開口した端壁 部分を備える側壁部分を備え、該チヤツク手段が該遮へい手段内の該中央開口と ほぼ同一空間内にあるように工作物を位置決めし、それによつて該スパツタガン 手段により飛ばされた材料の優勢な部分が該スパツタ遮へい手段と工作物により 収集されることを特徴とする請求の範囲第7項に記載のウエハ処理機。8. The spatter shielding means prevents protrusions of material blown from the sputtering gun means. an inwardly facing centrally open end wall surrounding and at the distal end of the sputtering gun means; a sidewall portion comprising a portion, the chuck means communicating with the central opening in the shielding means; Position the workpieces so that they are approximately in the same space, thereby A predominant portion of the material blown away by the spatter shielding means and the workpiece 8. The wafer processing machine according to claim 7, wherein the wafer processing machine is collected. 9.該遮へい手段を該スパツタガン手段から搬送するための手段を備えることを 特徴とする請求の範囲第8項に記載のウエハ処理機。9. comprising means for transporting said shielding means from said sputtering gun means; A wafer processing machine according to claim 8. 10.該スパツタ遮へい手段を該スパツタガン手段の該陽極と陰極の電位に対し て電気的に絶縁するための電気絶縁手段を備えていることを特徴とする請求の範 囲第8項に記載のウエハ処理機。10. The spatter shielding means is connected to the potential of the anode and cathode of the sputter gun means. Claims characterized in that the claim comprises electrical insulation means for electrically insulating the The wafer processing machine according to item 8. 11.ウエハが減圧下にある排気可能なウエハ処理室内で被覆される形式のウエ ハ処理機において、その壁内に点検ポートを備えた該ウエハ処理室と、該点検ポ ートを閉じ密封するカバー手段と、該カバー手段から搬送されウエハ処理室内へ 延び、材料をウエハ処理室内で被覆さるべき工作物上へ突出させるがン手段と、 該カバー手段から搬送され該処理室内へ延び、減圧下で作業し室内で水蒸気その 他の凝縮物を凝縮させるための冷却フインガ手段と、該カバー手段と連通し冷却 液を処理室内の該冷却フインガ手段に供給する流体導管とから成ることを特徴と するウエハ処理機。11. A type of wafer in which the wafer is coated in an evacuated wafer processing chamber under reduced pressure. In a wafer processing machine, the wafer processing chamber has an inspection port in its wall, and the inspection port a cover means for closing and sealing the wafer processing chamber; gun means for extending and projecting material onto the workpiece to be coated within the wafer processing chamber; It is conveyed from the cover means and extends into the processing chamber, and is operated under reduced pressure to remove water vapor and the like inside the chamber. a cooling finger means for condensing other condensate and communicating with the cover means for cooling; a fluid conduit for supplying liquid to the cooling finger means within the processing chamber. Wafer processing machine. 12.該冷却フインガ手段がほぼ孤状で該ガン手段とほぼ同心円状にかつ該ガン 手段の外側に配置されることを特徴とする請求の範囲第11項に記載のウエハ処 理機。12. The cooling finger means is substantially arc-shaped and substantially concentric with the gun means and The wafer processing device according to claim 11, wherein the wafer processing device is arranged outside the means. Science machine.
JP60500399A 1983-12-22 1984-12-20 wafer processing machine Pending JPS61500799A (en)

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US564740 1983-12-22
US06/564,740 US4522697A (en) 1983-12-22 1983-12-22 Wafer processing machine

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DE168437T1 (en) 1986-05-22
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US4522697A (en) 1985-06-11

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