JPS5794574A - Etching vessel - Google Patents

Etching vessel

Info

Publication number
JPS5794574A
JPS5794574A JP17011480A JP17011480A JPS5794574A JP S5794574 A JPS5794574 A JP S5794574A JP 17011480 A JP17011480 A JP 17011480A JP 17011480 A JP17011480 A JP 17011480A JP S5794574 A JPS5794574 A JP S5794574A
Authority
JP
Japan
Prior art keywords
vessel
soln
etching
mixed
solns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17011480A
Other languages
Japanese (ja)
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17011480A priority Critical patent/JPS5794574A/en
Publication of JPS5794574A publication Critical patent/JPS5794574A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To improve and stabilize the production of a silicon nitride film etching process by providing a heat exchange mechanism of an etching soln. withdrawn to the outside of an etching vessel and the mixed solns. prepd. by mixing this with pure water and returned to the vessel to said etching vessel.
CONSTITUTION: The phosphoric acid soln. 10 in a bath vessel 6 made of quartz glass with a quartz glass cover 7 cooled by the cooling water of a pipe 8 is in a high temp. state by means of an immersion heater 9. When a valve 11 is opened, part of the soln. 10 having an increased specific gravity is mixed with the pure water flowing in through a similarly opened valve 12, in a mixing mechanism 14. The soln. 10 withdarwn at this time causes heat exchanging with the mixed solns. in a heat exchange mechanism 13, and is thereby lowered of temp.; hence, there is no danger. The mixed solns. are conversely heated by the soln. 10 and are returned to the vessel 6. It is possible to maintain the soln. 10 in the vessel 16 in a constant state at all times by cooperating the valves 11, 12 with a hydrometer.
COPYRIGHT: (C)1982,JPO&Japio
JP17011480A 1980-12-02 1980-12-02 Etching vessel Pending JPS5794574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17011480A JPS5794574A (en) 1980-12-02 1980-12-02 Etching vessel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17011480A JPS5794574A (en) 1980-12-02 1980-12-02 Etching vessel

Publications (1)

Publication Number Publication Date
JPS5794574A true JPS5794574A (en) 1982-06-12

Family

ID=15898892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17011480A Pending JPS5794574A (en) 1980-12-02 1980-12-02 Etching vessel

Country Status (1)

Country Link
JP (1) JPS5794574A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63147537A (en) * 1986-12-11 1988-06-20 Shionogi & Co Ltd Method and apparatus for cooling
US5188701A (en) * 1990-09-05 1993-02-23 Fujitsu Limited Method of fabricating semiconductor device
US6001215A (en) * 1996-04-03 1999-12-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor nitride film etching system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63147537A (en) * 1986-12-11 1988-06-20 Shionogi & Co Ltd Method and apparatus for cooling
US5188701A (en) * 1990-09-05 1993-02-23 Fujitsu Limited Method of fabricating semiconductor device
US6001215A (en) * 1996-04-03 1999-12-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor nitride film etching system

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