CN103215562A - Reaction cavity - Google Patents
Reaction cavity Download PDFInfo
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- CN103215562A CN103215562A CN2013101477901A CN201310147790A CN103215562A CN 103215562 A CN103215562 A CN 103215562A CN 2013101477901 A CN2013101477901 A CN 2013101477901A CN 201310147790 A CN201310147790 A CN 201310147790A CN 103215562 A CN103215562 A CN 103215562A
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- reaction chamber
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- pallet
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Abstract
The invention relates to a reaction chamber. The reaction cavity comprises a reaction chamber, a tray arranged in the reaction chamber, and a spray head arranged in the reaction chamber and located above the tray, wherein the distance between the spray head and the upper surface of the tray is 15-100 mm; the spray head is used for spraying a reactant gas to the tray so as to form a gas flow between spray head and the upper surface of the tray; and a gas flow adjustment component is arranged around the gas flow. Via the reaction cavity, the distance between the spray head and the upper surface of the tray is increased, and the reactant gas is prevented from being combined on the surface of the spray head to form particulate matters, thus increasing the process reaction yield in the reaction cavity; and moreover, the gas flow adjustment component can be used for controlling the gas flow to supply gas to the tray in a vertical direction or an inclined direction, so that the gas flow between the spray head and the upper surface of the tray is uniformly distributed, thus increasing the utilization rate of the reactant gas.
Description
Technical field
The present invention relates to semiconductor deposition equipment, particularly relate to a kind of reaction chamber.
Background technology
Chemical vapor deposition (Chemical Vapor Deposition is called for short CVD) technology is widely used in the various semiconductor film membrane modules of preparation, comprises microelectronic chip, photodiode (LED), solar cell etc.The primary process of chemical vapor deposition is, source gas is introduced reactor from source of the gas, gas particle arrives substrate surface by transporting (convection current and diffusion), on high temperature substrate owing to chemical reaction takes place in thermal excitation, thereby on wafer, deposit monocrystalline or polycrystal film.
The structure of the reaction chamber of the chemical vapor deposition of prior art as shown in Figure 1, reaction chamber 100 comprises reaction chamber 110, be used to place the pallet 130 of substrate, described pallet 130 is arranged in the described reaction chamber 110, spray header 120 is arranged at the top of described pallet 130, be used for providing reactant gases to described pallet 130, the distance H between described spray header 120 and described pallet 130 upper surfaces is no more than 11mm.But the yield of the technology in the reaction chamber 100 of prior art is not good, has much room for improvement.
Therefore, how to provide a kind of reaction chamber,, become the technical barrier that those skilled in the art need solve to improve the yield of chemical vapor deposition method.
Summary of the invention
There is the not good problem of technology yield in the reaction chamber in the reaction chamber of prior art, the invention provides a kind of reaction chamber that can address the above problem.
The invention provides a kind of reaction chamber, comprising:
Reaction chamber;
Pallet is arranged in the described reaction chamber, and the upper surface of described pallet is used to place substrate;
Spray header is arranged in the described reaction chamber, and is positioned at the top of described pallet;
Distance between described spray header and the described tray upper surface is 15mm～100mm, described spray header sprays reactant gases to form air-flow between described spray header and described tray upper surface to described pallet, around described air-flow the air-flow adjustment component being set, is described pallet air feed to control described air-flow.
Further, to be used to control described air-flow be described pallet air feed with vertical direction to described air-flow adjustment component.
Further, described air-flow adjustment component is an air ejection member, and described air ejection member is positioned at the periphery of described spray header, and described air ejection member jet flow stream is with the peripheral air curtain ring that forms of the air-flow between described spray header and described pallet.
Further, the gas of described air ejection member injection is reactant gases.
Further, the gas of described air ejection member injection is nonreactive gas.
Further, described air-flow adjustment component is an overhead gage, and described overhead gage is around the periphery that is arranged on described spray header, and the bottom of described overhead gage is lower than the lower surface of described spray header.
Further, the bottom of described overhead gage is lower than the lower surface 10mm～40mm of described spray header, and exceeds the upper surface of described pallet.
Further, described air-flow adjustment component is a lower baffle plate, and described lower baffle plate is around the periphery that is arranged on described pallet, and the top of described lower baffle plate is higher than described tray upper surface.
Further, the top of described lower baffle plate is higher than described tray upper surface 10mm～30mm, and is lower than the lower surface of described spray header.
Further, have venting hole on the described lower baffle plate, the axis of described venting hole is higher than described tray upper surface 1mm～10mm.
Further, the lower surface of described spray header has some production wells, and described production well is in the lower surface arrayed of described spray header.
Further, described reaction chamber also comprises heating unit, and described heating unit is positioned at the bottom center of described pallet.
Further, described reaction chamber also comprises air-bleed system, and described air-bleed system makes the gas between described spray header and the described pallet discharge around described pallet.
Further, described air-bleed system setting comprise and described pallet and described reaction chamber sidewall between the exhaust-duct that forms and be positioned at the venting hole of reaction chamber bottom, described venting hole is communicated with described exhaust-duct.
Compared with prior art, reaction chamber provided by the invention has the following advantages:
1. in reaction chamber of the present invention, distance between described spray header and the described tray upper surface is 15mm～100mm, and the air-flow adjustment component is set around the described air-flow, compared with prior art, increase the distance between described spray header and the described tray upper surface, thereby reduced described spray header and be subjected to that described pallet is thermal-radiating to be influenced, reduced the temperature of the reactant gases on described spray header surface, avoid reactant gases to form particulate matter, thereby improve technological reaction yield in the reaction chamber in described spray header surface bonding; It is described pallet air feed that described air-flow adjustment component can be controlled described air-flow, avoids reactant gases can't arrive described pallet, and the air-flow between described spray header and the described tray upper surface is evenly distributed, and improves the utilization ratio of reactant gases.
2. in reaction chamber of the present invention, it is described pallet air feed with vertical direction that described air-flow adjustment component is used to control described air-flow, reactant gases is from the upper surface of described spray header vertical current to described pallet, edge along the upper surface split flow of described pallet to described pallet then, last under the effect of the air-bleed system below the described pallet, discharge below, edge to described pallet, make upper surface that described reactant gases can arrive described pallet reacting, thereby make described reactant gases utilization ratio height; And therefore described reactant gases is more prone to form streamlined rock steady structure in the easy split flow of described tray upper surface, and the homogeneity of described air-flow is better, and the defective of the epitaxial material layer of formation is few, good evenness.
Description of drawings
Fig. 1 is the synoptic diagram of reaction chamber of the prior art;
Fig. 2 is a reaction chamber inner pallet top airflow field synoptic diagram pockety;
Fig. 3 a-Fig. 3 b is the synoptic diagram of the reaction chamber of an embodiment of the present invention;
Fig. 4 a-Fig. 4 b is the synoptic diagram of the reaction chamber of the another embodiment of the present invention;
Fig. 5 a-Fig. 5 b is the synoptic diagram of the reaction chamber of another embodiment of the present invention.
Embodiment
In the reaction chamber of prior art, the distance between described spray header and the described tray upper surface is no more than 11mm, and the yield of the technology in the reaction chamber is not good, has much room for improvement.The contriver finds through the further investigation to the prior art reaction chamber, one of reason that influences the chemical vapor deposition method yield is because described spray header surface can form particulate matter, these particulate matters drop on epitaxial film in reaction process, thereby have influenced the yield of technology.The contriver further discovers, the reason of described spray header surface formation particulate matter is that the spacing of described spray header and described pallet is near excessively, reactant gases between described spray header and the described pallet is subjected to the influence of described pallet heating and spray header surface by the thermal-radiating influence of pallet, make described reaction gas know from experience, thereby form particulate matter in the spray header surface bonding.Thereby, the present application people suitably increases the spacing between described spray header and the described pallet, can reduce described spray header and be subjected to that described pallet is thermal-radiating to be influenced, reduced the temperature of the reactant gases on described spray header surface, effectively reduce the particulate matter on spray header surface, distance between described spray header and the described pallet can not be excessive, the described reactant gases of avoiding waste on the one hand, prevent also that on the other hand described reactant gases from can't arrive described pallet, thereby guarantee the utilization ratio of described reactant gases.
But iff the spacing that has increased between described spray header and the described pallet, not only can cause the utilization ratio of described reactant gases to reduce, and make described pallet top airflow field skewness, as shown in Figure 2, in the reaction chamber 200 in Fig. 2, reaction chamber 200 comprises reaction chamber 210, be used to place the pallet 230 of substrate, described pallet 230 is arranged in the described reaction chamber 210, spray header 220 is arranged at the top of described pallet 130, be used for providing reactant gases to described pallet 230, the distance H between described spray header 220 and described pallet 230 upper surfaces is greater than 11mm.But air-flow 240 skewness of described pallet 230 tops make reactant gases can not arrive described pallet 230 surfaces, thereby influence the utilization ratio of described reactant gases.So, in order to guarantee the homogeneity of described air-flow, around described air-flow, the air-flow adjustment component is set, further controlling described air-flow is described pallet air feed with vertical or vergence direction.
Because above-mentioned research, the present invention proposes a kind of reaction chamber that can improve the yield of chemical vapor deposition method, described reaction chamber comprises reaction chamber, pallet, be arranged in the described reaction chamber, the upper surface of described pallet is used to place substrate, spray header, be arranged in the described reaction chamber, and be positioned at the top of described pallet, and the distance between described spray header and the described tray upper surface is 15mm～100mm, described spray header sprays reactant gases to form air-flow between described spray header and described tray upper surface to described pallet, around described air-flow the air-flow adjustment component being set, is described pallet air feed to control described air-flow.
Compare with the prior art reaction chamber, in the reaction chamber of the present invention, increase the distance between described spray header and the described tray upper surface, thereby reduced described spray header and be subjected to that described pallet is thermal-radiating to be influenced, reduced the temperature of the reactant gases on described spray header surface, avoid reactant gases to form particulate matter, thereby improve technological reaction yield in the reaction chamber in described spray header surface bonding; Be provided with the air-flow adjustment component simultaneously, it is described pallet air feed that described air-flow adjustment component can be controlled described air-flow, avoid reactant gases can't arrive described pallet, the air-flow between described spray header and the described tray upper surface is evenly distributed, improve the utilization ratio of reactant gases.
See also Fig. 3 a-Fig. 3 b, Fig. 3 a-Fig. 3 b is the synoptic diagram of the reaction chamber of an embodiment of the present invention, in the present embodiment, described air-flow adjustment component is an air ejection member 350, described air ejection member 350 is positioned at the periphery of described spray header 320, described air ejection member 350 jet flow stream are with the 340 peripheral air curtain rings 351 that form of the air-flow between described spray header 320 and described pallet 330.
Distance H between described spray header 320 and described pallet 330 upper surfaces is 15mm～100mm, optionally, distance H between described spray header 320 and described pallet 330 upper surfaces is 20mm, 30mm, 40mm, 50mm, 80mm etc., spacing between described spray header 320 and the described pallet 330 is bigger, thereby reduced described spray header 320 and be subjected to described pallet 330 thermal-radiating influences, reduced the temperature of the reactant gases on described spray header 320 surfaces, avoid reactant gases to form particulate matter, thereby improve technological reaction yield in the reaction chamber 300 in described spray header 320 surface bonding.But, distance between described spray header 320 and the described pallet 330 can not be excessive, if the distance between described spray header 320 and the described pallet 330 is excessive, can waste described reactant gases, and described reactant gases possibly can't arrive described pallet 330, thereby can't guarantee the utilization ratio of described reactant gases, so the distance H between described spray header 320 and described pallet 330 upper surfaces is that 15mm～100mm is preferable.
In the present embodiment, described air-flow adjustment component is an air ejection member 350, described air ejection member 350 is positioned at the periphery of described spray header 320, described air ejection member 350 jet flow stream, with the 340 peripheral air curtain rings 351 that form of the air-flow between described spray header 320 and described pallet 330, be described pallet 330 air feed to control described air-flow 340, preferable, the described air-flow 340 of described air ejection member 350 controls is described pallet 330 air feed with vertical direction, be that described reactant gases is from the upper surface (towards the surface of described spray header 320) of described spray header 320 vertical currents to described pallet 330, edge along the upper surface split flow of described pallet 330 to described pallet 330 then, discharge to the below, edge of described pallet 330 at last, the flow direction of air-flow 340 described in Fig. 3 a, make upper surface that described reactant gases can arrive described pallet 330 reacting, thereby improve described reactant gases utilization ratio; And therefore described reactant gases is more prone to form streamlined rock steady structure in the easy split flow of described pallet 330 upper surfaces, and the homogeneity of described air-flow 340 is better, and the defective of the epitaxial material layer of formation is few, good evenness.But described reactant gases is not limited to the upper surface of vertical current to described pallet 330 from described spray header 320, described reactant gases can also vergence direction flows to the upper surface of described pallet 330 from described spray header 320, can also be for described pallet 330 air feed, also within thought range of the present invention.
Wherein, the gas that described air ejection member 350 is sprayed can be reactant gases, can improve the concentration of described spray header 320 fringe region reactant gasess, thereby compensate described pallet 330 edges owing to the low problem of the speed of growth of the temperature epitaxial material speed of growth that causes on the low side than described pallet 330 middle parts.In addition, the gas that described air ejection member 350 is sprayed can also be nonreactive gas, and described air ejection member 350 is sprayed nonreactive gas and can be saved cost.The air pressure that described air curtain ring 351 produces can limit the scope and the direction of described air-flow 340, and described air-flow 340 is uniformly distributed in the described air curtain ring 351, and is described pallet 330 air feed with vertical or vergence direction.Described air ejection member 350 can with described spray header 320 integrally manufactured formation, described spray header 320 provides to spray to described air ejection member 350 uses gas; Described air ejection member 350 also can be for being independent of a separate part of described spray header 320, can provide to spray to described air ejection member 350 with the gas air supply part by injections such as jet pipes and use gas, and spray and do not do concrete restriction with the quantity and the position of gas air supply part, spray with the gas air supply part as described air inlet port 321 provide from described air ejection member 350 tops to spray and use gas, injection gas also can be provided from described air ejection member 350 sides.Described air ejection member 350 is positioned at the periphery of described spray header 320, and wherein, described air ejection member 350 can be positioned at a week of the sidewall of described spray header 320, shown in Fig. 3 a, also can be positioned at a week of described spray header 320 lower surface edges, shown in Fig. 3 b.
Preferable, described reaction chamber 300 also comprises heating unit 360, described heating unit 360 is positioned at the bottom center of described pallet 330, heat to described pallet 330 with convenient, but described heating unit 360 is not limited to be positioned at the bottom center of described pallet 330, can also be positioned at the side of described pallet 330, as long as described heating unit 360 can be to described pallet 330 heating, also within thought range of the present invention.
Preferable, described reaction chamber 310 also comprises air-bleed system 370, described air-bleed system 370 makes the gas between described spray header 320 and the described pallet 330 discharge around described pallet 330, makes the described pallet 330 of the easier arrival of described reactant gases to produce air pressure.Preferable, described air-bleed system 370 be provided with comprise and described pallet 330 and described reaction chamber 310 sidewalls between the exhaust-duct 371 that forms and the venting hole 372 that is positioned at reaction chamber 310 bottoms, described venting hole 372 is communicated with described exhaust-duct 371, so that the gas between described spray header 320 and the described pallet 330 is discharged described reaction chamber 310 from described venting hole 372.But described air-bleed system 370 is not limited to said structure, exhaust-duct 371 can also be positioned at the bottom center of described pallet 330 as described, or described venting hole 372 is positioned at described reaction chamber 310 sidewalls, can also make the gas between described spray header 320 and the described pallet 330 around described pallet 330, discharge, also within thought range of the present invention.
In the present embodiment, described reaction chamber 300 can be used for MOCVD (organometallics chemical gaseous phase deposition), PECVD chemical vapor depsotition equipments such as (plasma enhanced chemical vapor depositions), to improve the technology yield.
See also Fig. 4 a-Fig. 4 b, Fig. 4 a-Fig. 4 b is the synoptic diagram of the reaction chamber of the another embodiment of the present invention.The reaction chamber 400 of described another embodiment is basic identical with the reaction chamber 300 of a described embodiment, its difference is: described air-flow adjustment component is an overhead gage 480, described overhead gage 480 is around the periphery that is arranged on described spray header 420, and the bottom of described overhead gage 480 is lower than the lower surface of described spray header 420.Described overhead gage 480 is positioned at the periphery of described spray header 420, and wherein, described overhead gage 480 can be positioned at a week of the sidewall of described spray header 420, shown in Fig. 4 a, also can be positioned at a week of described spray header 420 lower surface edges, shown in Fig. 4 b.In the present embodiment, described overhead gage 480 is positioned at the periphery of described spray header 420, described overhead gage 480 can also limit the scope and the direction of described air-flow 440, make described air-flow 440 uniform distribution in described overhead gage 480, and be described pallet 430 air feed, thereby reach the beneficial effect that improves the reactant gases utilization ratio with vertical or vergence direction.Preferable, the bottom of described overhead gage 480 is lower than the lower surface 10mm～40mm of described spray header 420, and exceed the upper surface of described pallet 430, the bottom of overhead gage 480 is lower than lower surface 20mm, the 30mm etc. of described spray header 420 as described, but the bottom of described overhead gage 480 is lower than the distance L 1 of the lower surface of described spray header 120 is not limited to 10mm～40mm, the distance L 1 of lower surface that the bottom of described overhead gage 480 is lower than described spray header 420 is big more, and the scope of the described air-flow 440 of described overhead gage 480 restrictions and the effect of direction are obvious more.
See also Fig. 5 a-Fig. 5 b, Fig. 5 a-Fig. 5 b is the synoptic diagram of the reaction chamber of another embodiment of the present invention.The reaction chamber 500 of described another embodiment is basic identical with the reaction chamber 300 of a described embodiment, its difference is: described air-flow adjustment component is a lower baffle plate 590, described lower baffle plate 590 is around the periphery that is arranged on described pallet 530, and the top of described lower baffle plate 590 is higher than described pallet 530 upper surfaces.In the present embodiment, described lower baffle plate 590 is positioned at the periphery of described pallet 530, described lower baffle plate 590 can also limit the scope and the direction of described air-flow 540, make described air-flow 540 uniform distribution in described lower baffle plate 590, and be described pallet 530 air feed, thereby reach the beneficial effect that improves the reactant gases utilization ratio with vertical or vergence direction.Described lower baffle plate 590 is positioned at the periphery of described pallet 530, and wherein, described lower baffle plate 590 can be positioned at a week of the sidewall of described pallet 530, shown in Fig. 5 a, also can be positioned at a week of described pallet 530 top surface edge, shown in Fig. 5 b.
Preferable, the top of described lower baffle plate 590 is higher than described pallet 530 upper surface 10mm～30mm, and be lower than the lower surface of described spray header 520, the top of lower baffle plate 590 is higher than described pallet 530 upper surface 15mm, 20mm etc. as described, but the top of described lower baffle plate 590 is higher than the distance L 2 of described pallet 530 upper surfaces is not limited to 10mm～40mm, the distance L 2 that the top of described lower baffle plate 590 is higher than described pallet 530 upper surfaces is big more, and the scope of the described air-flow 540 of described lower baffle plate 590 restrictions and the effect of direction are obvious more.Preferable, has venting hole 591 on the described lower baffle plate 590, described venting hole 591 is near described pallet 530, preferably, the distance L 3 that the axis of described venting hole is higher than described tray upper surface is 1mm～10mm, as 2mm, 5mm, 8mm etc., the described reactant gases that has reacted is successfully discharged from described venting hole 591, described deposition reaction can be proceeded.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (14)
1. reaction chamber is characterized in that: comprising:
Reaction chamber;
Pallet is arranged in the described reaction chamber, and the upper surface of described pallet is used to place substrate;
Spray header is arranged in the described reaction chamber, and is positioned at the top of described pallet;
Distance between described spray header and the described tray upper surface is 15mm～100mm, described spray header sprays reactant gases to form air-flow between described spray header and described tray upper surface to described pallet, around described air-flow the air-flow adjustment component being set, is described pallet air feed to control described air-flow.
2. reaction chamber as claimed in claim 1 is characterized in that: it is described pallet air feed with vertical direction that described air-flow adjustment component is used to control described air-flow.
3. reaction chamber as claimed in claim 1, it is characterized in that: described air-flow adjustment component is an air ejection member, described air ejection member is positioned at the periphery of described spray header, and described air ejection member jet flow stream is with the peripheral air curtain ring that forms of the air-flow between described spray header and described pallet.
4. reaction chamber as claimed in claim 3 is characterized in that: the gas that described air ejection member is sprayed is reactant gases.
5. reaction chamber as claimed in claim 3 is characterized in that: the gas that described air ejection member is sprayed is nonreactive gas.
6. reaction chamber as claimed in claim 1 is characterized in that: described air-flow adjustment component is an overhead gage, and described overhead gage is around the periphery that is arranged on described spray header, and the bottom of described overhead gage is lower than the lower surface of described spray header.
7. reaction chamber as claimed in claim 6 is characterized in that: the bottom of described overhead gage is lower than the lower surface 10mm～40mm of described spray header, and exceeds the upper surface of described pallet.
8. reaction chamber as claimed in claim 1 is characterized in that: described air-flow adjustment component is a lower baffle plate, and described lower baffle plate is around the periphery that is arranged on described pallet, and the top of described lower baffle plate is higher than described tray upper surface.
9. reaction chamber as claimed in claim 8 is characterized in that: the top of described lower baffle plate is higher than described tray upper surface 10mm～30mm, and is lower than the lower surface of described spray header.
10. reaction chamber as claimed in claim 8 is characterized in that: have venting hole on the described lower baffle plate, the axis of described venting hole is higher than described tray upper surface 1mm～10mm.
11. as any described reaction chamber among the claim 1-10, it is characterized in that: the lower surface of described spray header has some production wells, described production well is in the lower surface arrayed of described spray header.
12. as any described reaction chamber among the claim 1-10, it is characterized in that: described reaction chamber also comprises heating unit, described heating unit is positioned at the below of described pallet.
13. as any described reaction chamber among the claim 1-10, it is characterized in that: described reaction chamber also comprises air-bleed system, described air-bleed system makes the gas between described spray header and the described pallet discharge around described pallet.
14. as any described reaction chamber among the claim 1-10, it is characterized in that: described air-bleed system setting comprise and described pallet and described reaction chamber sidewall between the exhaust-duct that forms and be positioned at the venting hole of reaction chamber bottom, described venting hole is communicated with described exhaust-duct.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013101477901A CN103215562A (en) | 2013-04-25 | 2013-04-25 | Reaction cavity |
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| CN2013101477901A CN103215562A (en) | 2013-04-25 | 2013-04-25 | Reaction cavity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115341195A (en) * | 2022-08-11 | 2022-11-15 | 江苏微导纳米科技股份有限公司 | Film coating equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260230A (en) * | 1996-03-22 | 1997-10-03 | Toshiba Corp | Semiconductor device manufacturing device and manufacture thereof |
| US6059885A (en) * | 1996-12-19 | 2000-05-09 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus and method for forming thin film |
| US20020009868A1 (en) * | 2000-06-09 | 2002-01-24 | Toshiba Ceramics Co., Ltd. | Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method |
| WO2013034411A2 (en) * | 2011-09-05 | 2013-03-14 | Schmid Vacuum Technology Gmbh | Vacuum coating apparatus |
-
2013
- 2013-04-25 CN CN2013101477901A patent/CN103215562A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260230A (en) * | 1996-03-22 | 1997-10-03 | Toshiba Corp | Semiconductor device manufacturing device and manufacture thereof |
| US6059885A (en) * | 1996-12-19 | 2000-05-09 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus and method for forming thin film |
| US20020009868A1 (en) * | 2000-06-09 | 2002-01-24 | Toshiba Ceramics Co., Ltd. | Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method |
| WO2013034411A2 (en) * | 2011-09-05 | 2013-03-14 | Schmid Vacuum Technology Gmbh | Vacuum coating apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115341195A (en) * | 2022-08-11 | 2022-11-15 | 江苏微导纳米科技股份有限公司 | Film coating equipment |
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Application publication date: 20130724 |