CN103603038A - Photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with horizontal porous spray device - Google Patents

Photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with horizontal porous spray device Download PDF

Info

Publication number
CN103603038A
CN103603038A CN201310670277.0A CN201310670277A CN103603038A CN 103603038 A CN103603038 A CN 103603038A CN 201310670277 A CN201310670277 A CN 201310670277A CN 103603038 A CN103603038 A CN 103603038A
Authority
CN
China
Prior art keywords
cavity
horizontal
reaction chamber
light
spray header
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310670277.0A
Other languages
Chinese (zh)
Other versions
CN103603038B (en
Inventor
李国兴
任泽龙
张宝林
李万程
汪薪生
郭峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jilin University
Original Assignee
Jilin University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jilin University filed Critical Jilin University
Priority to CN201310670277.0A priority Critical patent/CN103603038B/en
Publication of CN103603038A publication Critical patent/CN103603038A/en
Application granted granted Critical
Publication of CN103603038B publication Critical patent/CN103603038B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

The invention relates to a photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with a horizontal porous spray device, belonging to the technical field of preparation of a superconducting film. The photo-assisted MOCVD reactor comprises an upper cavity and a lower cavity, wherein the upper cavity is a lamp cavity formed by a lamp shade (1) and a barrier (2), and the lower cavity is a reaction cavity; the reaction cavity is formed by a horizontal spray header (4), reaction cavity side walls (5) and a reaction cavity base (7); the horizontal spray header (4) is in a cuboid structure with a certain thickness, and is composed of two gas inlets, a gas mixing cavity, a plurality of equal-diameter equal-interval gas outlet holes and a cylindrical cavity; the outlet of each gas outlet holes is arranged in the cylindrical cavity; and the horizontal spray header (4) is installed above the side walls (5) of the reaction cavity and welded with the side walls (5) of the reaction cavity together. The horizontal spray header enhances the lateral distribution uniformity of inlet gas, and the rotatable base is matched to ensure the radial uniformity of the substrate growth rate, thereby ensuring the uniform growth of at least 3 superconductive epitaxial wafers with the diameter of 2 inches.

Description

The auxiliary MOCVD reactor of light with horizontal porous spray equipment
Technical field
The invention belongs to superconducting thin film preparing technical field, be specifically related to a kind of auxiliary MOCVD reactor of light with horizontal porous spray equipment.
Background technology
From 1987, find after the superconducting material of liquid nitrogen temperature, high temperature superconducting materia (High Temperature Superconductor is called for short HTS) and application thereof have obtained fast development.The application of HTS material can be divided into forceful electric power field and light current field.Application in light current field comprises this characteristic of low microwave surface resistance of utilizing HTS, can be used for developing high performance microwave passive device, as microwave transmission line, wave filter, resonator, retarding line etc., some approaches practical level very much, and has started to have obtained application in satellite communication, mobile communication ground base station, highly sensitive radar receiver front end system.The device of these HTS light current application is all based on the uniform HTS film of excellent first.Thereby, very important to the preparation technology's of high quality big area HTS film research.
MOCVD(Metal Organic Chemical Vapor Deposition is metal organic chemical vapor deposition) as one of main technique of epitaxial film growth, there is the features such as can depositional area large, the speed of growth is very fast, controllable parameter is many.In semi-conductor industry, oneself becomes one of main method of the multiple epitaxial growth of semiconductor material film of preparation MOCVD.
Light auxiliary law is a kind of method of utilizing luminous energy excitation chemical reaction and physical change, early has application on chemical industry.In MOCVD process, use up auxiliary method and be prepared with and be beneficial to reduction growth temperature, improve the utilization ratio in organic source, improve the speed of growth, improve the advantages such as quality of epitaxial film.Especially at preparation YBCO(yttrium barium copper oxide, molecular formula YBa 2cu 3o 7-x) etc. in high-temperature superconducting epitaxial thin film, systematic research work has proved that the auxiliary MOCVD technology of light can obtain more high-crystal quality (consistence of crystal lattice orientation, the compactness of film, the consistence of lattice parameter), shorter heat treatment time.
P.C.Chou etc. are at " the Optimization of J of Physical C the 254th volume (nineteen ninety-five) 93-112 page cof YBCO films prepared by photo-assisted MOCVD through statistical robust design " disclosed in a literary composition and made to use up the high deposition rate that auxiliary MOCVD realizes depositing high temperature superconducting body YBCO film.The halogen lamp of the electromagnetic radiation (comprising UV-light UV and infrared rays IR radiation) that the use transmitting boundaries such as Chou are wider, and the precursor that relies on the infrared rays of halogen lamp to carry out heated substrate and enter sedimentary province, ultraviolet ray is to improve reaction kinetics.But the reactor disclosing in literary composition only can guarantee compared with the film thickness of small area (diameter is less than 10mm) and the homogeneity of quality, can not be for scale operation.
Emerging in Ph D dissertation “Li state, < < prepares big area YBa with the auxiliary mocvd method of light 2cu 3o 7-xthe preliminary study > > [D] of high quality high-temperature superconductor epitaxial film. Changchun: Jilin University, 2009 " in a kind of MOCVD reactor is disclosed.Its reaction chamber is cylindrical, one end is single circular inlet mouth, the other end bottom is air outlet, pedestal is arranged in reaction chamber, rotatable, and this can guarantee film thickness and quality uniformity on 1 inch of area of diameter, but when 2 inches of substrate growths, thickness evenness differs greatly, and centre is thicker, edge thinner (only reach interior thickness 50%).At every turn can only the grow sample of 1 inch of a slice diameter of such design, the utilization ratio of gas is low, and production efficiency is also low, is not suitable for the batch preparation of big area epitaxial film.
Summary of the invention
In order to overcome the above-mentioned defect of prior art, the invention provides the auxiliary MOCVD reactor of a kind of light with horizontal porous spray equipment of for example, preparing for larger area (3 2 inches diameter substrate or equivalent area) superconducting thin film.It is identical that its light Auxiliary Principle and the people such as Chou propose light advantage theory, but the auxiliary MOCVD reactor of light of the present invention has the substrate pedestal of level spray air intake structure and rotation, the homogeneity of substrate growth can be increased, the high efficiency substrate growth of larger area can be realized.
Particularly, the auxiliary MOCVD reactor of light of the present invention comprises upper and lower two chambeies, and epicoele is the cuboid lamp chamber being surrounded by lampshade 1 and division board 2; Cavity of resorption is to surround cylindrical reaction chamber by horizontal spray header 4, reaction chamber sidewall 5, reaction chamber base 7.
In reaction chamber, be provided with substrate pallet 8, three 2 inches of substrates can be placed in its surface.Substrate pallet 8 externally can be around the rotation of reaction chamber central shaft under the drive of motor, thereby is conducive to the even growth of large area superconducting film material.In order to ensure the homogeneity of substrate pallet 8 upper surface temperature, can adopt the substrate pallet below multi-stage type resistive heating of generally using at present, coordinate the homogeneity of Illumination adjusting underlayer temperature.When equipment debugging, according to the difference of controlling target temperature, the power division ratio of light and multi-stage type resistance heater in reasonable disposition lamp chamber.For the advantage that guarantees that light is auxiliary as far as possible, should make the lamp of top be operated in higher power as far as possible, thereby make the spectrum that light source sends contain near-ultraviolet light, visible ray and infrared light.The height of substrate pallet can regulate to guarantee according to theoretical modeling and experimental result the homogeneity of tray surface air-flow.
Between lamp chamber and reaction chamber with rubber sealing, thereby prevent that ambient atmosphere from entering in two cavitys, division board 2 is separated lamp chamber and reaction chamber, prevents gas in reaction chamber because of convection current or diffuses in lamp chamber.
The light source that certain power is installed below the inner lampshade 1 in lamp chamber, its power, size, arrangement mode should decide according to the area of substrate.Lampshade 1 can be made by metals such as stainless steels, emerging in Ph D dissertation “Li state, and < < prepares big area YBa with the auxiliary mocvd method of light 2cu 3o 7-xthe preliminary study > > [D] of high quality high-temperature superconductor epitaxial film. Changchun: Jilin University, shape with the lampshade of water-cooling structure is disclosed 2009 ", and model and the arrangement mode of the cylindrical tungsten halogen lamp of 1.5KW adopting.The function of lampshade 1: 1) utilize water coolant to take away waste heat that fluorescent tube sends and improve fluorescent tube work-ing life; 2) between lamp chamber and reaction chamber in the mode of rubber sealing, keep the stopping property of two cavitys.
The material of division board 2 is selected upper, should select high temperature resistant and have a wider material that sees through spectrum, and for example quartz material has the wider spectrum that sees through and can be used as division board material, and thickness can meet the demands between 1～10mm.
Horizontal spray header 4 is for having certain thickness cuboid structure, and as shown in Figure 4, it is comprised of two inlet mouths, mixed air cavity, a plurality of isometrical equidistant little production well and a cylindrical cavity, and the outlet of a plurality of little production wells is all arranged in cylindrical cavity.As depicted in figs. 1 and 2, the internal diameter of cylindrical cavity is identical with the internal diameter of reaction chamber sidewall 5, and coaxial.Horizontal spray header 4 and reaction chamber sidewall 5 are welded together to form columniform reaction chamber.
At horizontal spray header 4, Y type inlet pipe 3 is installed above, Y type inlet pipe 3 has front end one branch and rear end two branched structures.Front end one branch of Y type inlet pipe 3 is connected with the pipeline that transports of MOCVD system, and the gas that enters this pipeline is the controlled gas of flow; End two branches of Y type inlet pipe 3 are connected with two inlet pipe of horizontal spray header 4.After gas in inlet pipe 3 can being halved like this, enter into the mixed air cavity of horizontal spray header 4, after mixing, by a plurality of little production wells, produce uniform horizontal layer streaming air-flow in mixed air cavity, this air-flow enters in reaction chamber and skims over substrate surface after circular cavity, and its simulation of air flow analogous diagram can be with reference to figure 7.
Place, close bottom at reaction chamber sidewall 5 is welded with air outlet 6, and the pneumatic control systems such as air outlet 6 and butterfly valve in MOCVD system, vacuum pump are connected, to realize the function of discharging gas pressure intensity control in reaction chamber tail gas and reaction chamber.
Between reaction chamber diapire 7 in the present invention and reaction chamber sidewall 5 with cushion rubber form sealing so that open this sealing place when needing repairing and safeguarding in reaction chamber inside.The support that simultaneous reactions chamber diapire 7 is realized the auxiliary MOCVD reactor of whole light.
Benefit of the present invention is:
1, using the light source (as halogen tungsten lamp) of suitable spectral range as chemistry and physical reaction exciting energy resource, can improve epitaxial film crystal mass, reduce underlayer temperature, improve the utilization ratio of organic material, improve growth velocity.
2, usage level spray header has increased the lateral distribution homogeneity of air inlet, coordinates rotatable pedestal can guarantee the radially even of the substrate speed of growth.Thereby the superconduction epitaxial wafer that can guarantee at least 32 inches diameters is evenly grown.
For the ease of understanding, will the present invention be described in detail by accompanying drawing and concrete embodiment below.It needs to be noted, accompanying drawing and concrete example are only used to explanation, obviously those of ordinary skill in the art can make various corrections and change to the present invention within the scope of the invention according to explanation herein, and these corrections and change are also included in scope of the present invention.
Accompanying drawing explanation
Fig. 1: the three-dimensional diagrammatic cross-section of MOCVD reactor of the present invention;
Fig. 2: MOCVD reactor of the present invention face section plan;
Fig. 3: MOCVD reactor outside view of the present invention, (a) vertical view and (b) front view;
Fig. 4: the inlet pipe of MOCVD reactor of the present invention and the top plan view of horizontal spray header;
Fig. 5: the air velocity vector distribution plan of MOCVD reactor substrate surface of the present invention top 1mm At The Height;
Fig. 6: the velocity vector distribution plan of MOCVD reactor longitudinal median plane of the present invention;
Fig. 7: the speed motion pattern of MOCVD reactor of the present invention.
Embodiment
Embodiment 1
The auxiliary MOCVD reactor of disclosed light, should coordinate periphery to transport pipeline control system, and vacuum pump equipressure Controlling System and temperature, pallet Rotable Control System etc. automatically control device are realized film growth.
Below to prepare high-temperature superconductor YBCO (YBa 2cu 3o 7-x) substrate is the technical process of example explanation film preparation:
First lampshade 1 is lifted to (can utilize motor or manpower), take out division board 2, substrate is placed on to the upper surface of substrate pallet 8.Then put back to division board 2, install lampshade 1, open mechanical rotation, make substrate for example, with certain speed rotation, (50r/min).
By not containing the gas in organic source as inactive gass such as Ar(or nitrogen) from inlet pipe 3, pass into reaction chamber.Utilize peripheral vacuum pump equipressure Controlling System, by air outlet 6, the pressure in reaction chamber is regulated to the required pressure of film growth (be generally between 500-2000Pa, the chamber pressure adopting in this example is 1000Pa) simultaneously.
Auxiliary each part dimension of MOCVD reactor of light and the material in this example, used are as follows: inlet pipe 3: internal diameter 10.74mm, external diameter 12.70mm; Horizontal spray header 4: the mixed long 158mm of air cavity, wide 27mm, high 16mm, little production well diameter 3mm, totally 156 of little production wells; Substrate pallet 8: upper diameter: 124mm, the high 170mm of top cylinder, lower diameter 30mm, length 100mm; Escape pipe 6: internal diameter 23.4mm, external diameter 25.4mm, length 100mm; Sidewall 5: internal diameter 160mm, external diameter 166mm, height 200mm; Division board 2: length 220mm, width 200mm, height 5mm; Lampshade 1: length 220mm, width 200mm, height 50mm, inner tube diameter 25.72mm; Above material is stainless steel.
Experiment showed, that adopting the Ushio FDB120V-1500WC model tungsten halogen lamp of 5 horizontal (apart from 25mm) to be operated in the substrate pallet that can be just 150mm by distance below it under 75% rated output is heated to 830 ℃.In example, substrate is heated to 800 ℃; the power division of each hot spots is according to predefined ratio; temperature contrast is in 2% everywhere to guarantee substrate, and accurate temperature sensing can be by K type thermopair, and temperature is controlled and can be realized by PID automatic control program.
To carry the organic source Y in gaseous metal (tmhd) 3, Ba (tmhd) 2, Cu (tmhd) 2ar gas and O 2deng oxidizing gas, pass into reaction chamber with flow in certain proportion, for example, by Ar, carry three kinds of same O of metal organic source 2and N 2the mixed gas that O forms, wherein Ar flow is that 250sccm(accounts for total flux 50%), O 2flow is that 150sccm(accounts for total flux 30%), N 2o flow is that 100sccm(accounts for total flux 20%).Now film starts to carry out epitaxy according to certain speed.The film growth rates definite according to experiment, selects growth time, can obtain certain thickness YBCO epitaxial film.For example through experiment, we have obtained the YBCO speed of growth of 200nm/min, will obtain so the film that 600nm is thick and only need to grow 3 minutes.
When film growth finishes, the Ar that does not carry organic source is passed in reaction chamber, start cooling simultaneously and process, according to the particular requirement of preparing high-performance Y BCO film, experience one section of special aftertreatment technology.For example, with 10 ℃/min speed, at the constant oxygen partial pressure condition borehole cooling to 680 ℃ of growth pressure.Stop afterwards passing into Ar and the N of reaction chamber 2o, only passes into O 2until the interior pressure of reaction chamber is to 1atm.O at this 1atm 2under atmosphere, with the speed of 15 ℃/min, be cooled to 460 ℃, and constant temperature 30min.Speed with 15 ℃/min is cooled to room temperature afterwards, stops passing into the O of reaction chamber 2, can take out YBCO epitaxial substrate.
When growth is during two-sided YBCO substrate, after substrate need to being taken out, upset is put into and on substrate pallet apparatus 8, is again carried out said process at this.Experiment finds, when second face of growth, the superconducting property of first face is had to faint impact, can ignore.
We utilize Fluid Mechanics Computation (Computational Fluid Dynamics) method that current MOCVD design field generally adopts to the above-mentioned high-temperature superconductor YBCO (YBa for preparing 2cu 3o 7-x) case of substrate carried out computer simulation.The software that simulation is used is the FLUENT groupware of current popular ANSYS company, and FLUENT is widely adopted in MOCVD design and simulation at present, and its analog result has very high reliability.Simulation adopts high-precision Second-order Up-wind form, and condition setting is the reaction conditions in case.Fig. 5, Fig. 6 and Fig. 7 are concrete analog result.According to convention, we choose velocity vector distribution plan (being Fig. 5), the velocity vector distribution plan (being Fig. 6) of reactor longitudinal median plane and the speed motion pattern (being Fig. 7) of reactor of substrate surface 1mm height, near can finding out substrate surface by this three figure, velocity distribution has very high homogeneity, and then can guarantee the homogeneity that substrate is grown, fully proved the preparation of this reactor adapted big area.

Claims (7)

1. the auxiliary MOCVD reactor of light with horizontal porous spray equipment, comprises upper and lower two chambeies, and epicoele is lamp chamber, by lampshade (1) and division board (2), is surrounded; Cavity of resorption is reaction chamber, it is characterized in that: reaction chamber is surrounded by horizontal spray header (4), reaction chamber sidewall (5) and reaction chamber diapire (7); Horizontal spray header (4) is for having certain thickness cuboid structure, it is comprised of two inlet mouths, mixed air cavity, a plurality of isometrical equidistant little production well and a cylindrical cavity, the outlet of a plurality of little production wells is all arranged in cylindrical cavity, and horizontal spray header (4) is arranged on the top of reaction chamber sidewall (5) and welds together with it.
2. a kind of auxiliary MOCVD reactor of light with horizontal porous spray equipment as claimed in claim 1, is characterized in that: the inlet pipe of horizontal spray header (4) is 2.
3. a kind of auxiliary MOCVD reactor of light with horizontal porous spray equipment as claimed in claim 2, is characterized in that: before horizontal spray header (4), inlet pipe (3) is installed, inlet pipe (3) is front end one branch and rear end two branched structures.
4. a kind of auxiliary MOCVD reactor of light with horizontal porous spray equipment as claimed in claim 1, is characterized in that: between lamp chamber and reaction chamber, with rubber sealing, division board (2) is separated lamp chamber and reaction chamber.
5. a kind of auxiliary MOCVD reactor of light with horizontal porous spray equipment as claimed in claim 1, is characterized in that: the side of being, lamp chamber body structure, reaction chamber is cylindrical structure.
6. a kind of auxiliary MOCVD reactor of light with horizontal porous spray equipment as claimed in claim 5, is characterized in that: the internal diameter of the cylindrical cavity of horizontal spray-type (4) is identical with the internal diameter of reaction chamber sidewall (5).
7. a kind of light with horizontal porous spray equipment as claimed in claim 1 is assisted MOCVD reactor, it is characterized in that: in reaction chamber, be provided with substrate pallet apparatus (8), three 2 inches of substrates are placed on its surface, and substrate pallet apparatus (8) externally can rotate around reaction chamber central shaft under the drive of motor.
CN201310670277.0A 2013-12-10 2013-12-10 There is the light auxiliary MOCVD reactor of horizontal porous spray equipment Expired - Fee Related CN103603038B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310670277.0A CN103603038B (en) 2013-12-10 2013-12-10 There is the light auxiliary MOCVD reactor of horizontal porous spray equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310670277.0A CN103603038B (en) 2013-12-10 2013-12-10 There is the light auxiliary MOCVD reactor of horizontal porous spray equipment

Publications (2)

Publication Number Publication Date
CN103603038A true CN103603038A (en) 2014-02-26
CN103603038B CN103603038B (en) 2016-06-22

Family

ID=50121298

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310670277.0A Expired - Fee Related CN103603038B (en) 2013-12-10 2013-12-10 There is the light auxiliary MOCVD reactor of horizontal porous spray equipment

Country Status (1)

Country Link
CN (1) CN103603038B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106591805A (en) * 2016-11-23 2017-04-26 佛山市中山大学研究院 Spray head of MOCVD equipment, MOCVD equipment comprising spray head, and gas intake method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362879A (en) * 1986-09-02 1988-03-19 Anelva Corp Vacuum chemical reactor
EP0336672A2 (en) * 1988-04-04 1989-10-11 Xerox Corporation Epitaxial deposition of thin films
JPH03274275A (en) * 1990-03-26 1991-12-05 Mitsubishi Electric Corp Device for forming thin film utilizing organometallic gas
CN1078327A (en) * 1992-04-30 1993-11-10 中国科学院上海冶金研究所 The chemical gas phase quick sedimentation process of metallic oxide superconduction film
CN1377991A (en) * 2002-01-30 2002-11-06 吉林大学 MOCVD equipment and process for growing ZnO film
CN1563483A (en) * 2004-04-01 2005-01-12 南昌大学 Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device
CN1798618A (en) * 2003-06-05 2006-07-05 美国超能公司 Ultraviolet (UV) and plasma assisted metalorganic chemical vapor deposition (MOCVD) system
CN201099698Y (en) * 2007-08-17 2008-08-13 甘志银 Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity
CN102691051A (en) * 2012-06-18 2012-09-26 杭州士兰明芯科技有限公司 Spray head of MOCVD (metal organic chemical vapor deposition) equipment reactor and connection structure thereof
CN103205733A (en) * 2013-04-27 2013-07-17 南昌黄绿照明有限公司 Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362879A (en) * 1986-09-02 1988-03-19 Anelva Corp Vacuum chemical reactor
EP0336672A2 (en) * 1988-04-04 1989-10-11 Xerox Corporation Epitaxial deposition of thin films
JPH03274275A (en) * 1990-03-26 1991-12-05 Mitsubishi Electric Corp Device for forming thin film utilizing organometallic gas
CN1078327A (en) * 1992-04-30 1993-11-10 中国科学院上海冶金研究所 The chemical gas phase quick sedimentation process of metallic oxide superconduction film
CN1377991A (en) * 2002-01-30 2002-11-06 吉林大学 MOCVD equipment and process for growing ZnO film
CN1798618A (en) * 2003-06-05 2006-07-05 美国超能公司 Ultraviolet (UV) and plasma assisted metalorganic chemical vapor deposition (MOCVD) system
CN1563483A (en) * 2004-04-01 2005-01-12 南昌大学 Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device
CN201099698Y (en) * 2007-08-17 2008-08-13 甘志银 Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity
CN102691051A (en) * 2012-06-18 2012-09-26 杭州士兰明芯科技有限公司 Spray head of MOCVD (metal organic chemical vapor deposition) equipment reactor and connection structure thereof
CN103205733A (en) * 2013-04-27 2013-07-17 南昌黄绿照明有限公司 Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
李国兴: "以光辅助MOCVD法制备大面积YBa2Cu3O(7-x)高质量高温超导外延膜的初步研究", 《中国博士学位论文全文数据库工程科技辑》, vol. 2009, no. 7, 15 July 2009 (2009-07-15) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106591805A (en) * 2016-11-23 2017-04-26 佛山市中山大学研究院 Spray head of MOCVD equipment, MOCVD equipment comprising spray head, and gas intake method
CN106591805B (en) * 2016-11-23 2019-01-15 佛山市中山大学研究院 A kind of MOCVD device spray head and MOCVD device and intake method comprising it

Also Published As

Publication number Publication date
CN103603038B (en) 2016-06-22

Similar Documents

Publication Publication Date Title
US11091835B2 (en) Side inject nozzle design for processing chamber
CN102934204B (en) The method and apparatus of the turbulent flow of induction treatment chamber clean air
CN102421934B (en) High throughput multi-wafer epitaxial reactor
KR101369282B1 (en) High productivity thin film deposition method and system
KR101313524B1 (en) Film forming apparatus and film forming method
JP2016184742A (en) Wafer carrier having tilt edge
CN101933131A (en) In order to make the treatment system of compound nitride semiconductor devices
KR20140050682A (en) Methods and apparatus for the deposition of materials on a substrate
CN105441904A (en) Gas spray device, chemical vapor deposition device and method
CN102534569A (en) Atmospheric pressure glow plasma enhanced atom layer deposition device
CN102747418B (en) A kind of high temperature big area Device for epitaxial growth of silicon carbide and treatment process
CN105986251A (en) PECVD system
CN101958371A (en) Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells
CN108275716B (en) CsPbBr3Preparation method of perovskite three-dimensional cubic microcavity sample
CN101298693A (en) Double-layer airflow quartz fairing reaction chamber apparatus for MOCVD system
CN101748377B (en) Reaction chamber of metal organism chemical deposition equipment
CN103603038B (en) There is the light auxiliary MOCVD reactor of horizontal porous spray equipment
CN101930889A (en) Gas input device and plasma processing equipment
CN103382090B (en) A kind of method of continuous production copper-zinc-tin-sulfur film
CN103361624B (en) Metallo-organic compound chemical vapor deposition method and device
CN102746025B (en) Preparation method of low-cost GaN epitaxial film
CN204151411U (en) A kind of diffuser of MOCVD device and MOCVD device
CN216192876U (en) Vapor deposition system
CN214992009U (en) Airflow system structure for controlling diamond deposition rate
CN208472189U (en) Spiral wave plasma vapor phase growing apparatus

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160622

Termination date: 20181210

CF01 Termination of patent right due to non-payment of annual fee