CN208472189U - Spiral wave plasma vapor phase growing apparatus - Google Patents
Spiral wave plasma vapor phase growing apparatus Download PDFInfo
- Publication number
- CN208472189U CN208472189U CN201820884802.7U CN201820884802U CN208472189U CN 208472189 U CN208472189 U CN 208472189U CN 201820884802 U CN201820884802 U CN 201820884802U CN 208472189 U CN208472189 U CN 208472189U
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- air inlet
- inlet pipe
- chamber
- vacuum pump
- arc chamber
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Abstract
Spiral wave plasma vapor phase growing apparatus, it is related to precipitation equipment field, more particularly to spiral wave plasma vapor phase growing apparatus, it includes arc chamber, settling chamber, connecting pipe, electromagnetic coil, antenna, radio-frequency power supply, first air inlet pipe, air hole, first support plate, first vacuum pump, first exhaust tube, chip bench, second air inlet pipe, second support plate, second vacuum pump, second exhaust tube, arc chamber is connected by connecting pipe with settling chamber, the two sides inner wall of arc chamber is provided with electromagnetic coil, first air inlet pipe puts in the indoor part of electric discharge and is provided with multiple air holes, first vacuum pump is connect by the first exhaust tube with arc chamber, the bottom of settling chamber is provided with chip bench, the side of settling chamber is provided with the second air inlet pipe, second vacuum pump is connect by the second exhaust tube with settling chamber.After adopting the above technical scheme, the utility model has the beneficial effect that it is not only simple in structure, design is reasonable, and deposition efficiency is high, and finished product is with high purity, high-quality.
Description
Technical field
The utility model relates to precipitation equipment fields, and in particular to spiral wave plasma vapor phase growing apparatus.
Background technique
Modern science and technology need the New Inorganic Materials using a large amount of Various Functions, these functional materials must be high-purity
, or intentionally mix in high-purity material the dopant material of certain impurity formation.Chemical vapor deposition is recent decades
The new technology of the preparation inorganic material to grow up.Chemical vapour deposition technique be widely used for purifying substances, develop new crystal,
Deposit various monocrystalline, polycrystalline or glassy state inorganic thin film material.
Vapor deposition is a kind of Chemical Engineering Technology, which is mainly vapor-phase using the one or more containing film element
It closes object or simple substance, carry out the method that chemical reaction generates film on the surface of a substrate.Vapor deposition is that recent decades grow up
Preparation inorganic material new technology.Vapour deposition is widely used for purifying substances, develops new crystal, the various lists of deposit
Brilliant, polycrystalline or glassy state inorganic thin film material.These materials can be oxide, sulfide, nitride, carbide, can also be with
It is III-V, II-IV, the binary in group IV-VI or compound between polynary element, and their physical function can pass through
The deposition process of gas phase doping accurately controls.Currently, vapor deposition has become a frontier of Inorganic synthese chemistry.
But existing gaseous phase deposition stove, there are still some shortcomings, such as structure are complex, figure is larger, and
It is influenced by factors, conversion rate of products is low.
Utility model content
The purpose of this utility model is that it is in view of the drawbacks of the prior art and insufficient, spiral wave plasma vapor deposition is provided
Device, it is not only simple in structure, and design is reasonable, and deposition efficiency is high, and finished product is with high purity, high-quality.
To achieve the above object, the utility model is using following technical scheme: it includes arc chamber 1, settling chamber 2, connects
It threads a pipe 3, electromagnetic coil 4, antenna 5, radio-frequency power supply 6, the first air inlet pipe 7, air hole 8, the first support plate 9, the first vacuum pump
10, the first exhaust tube 11, chip bench 12, the second air inlet pipe 13, the second support plate 14, the second vacuum pump 15, the second exhaust tube 16,
Arc chamber 1 is connected by connecting pipe 3 with settling chamber 2, and the two sides inner wall of arc chamber 1 is provided with electromagnetic coil 4, antenna 5
One end is put in arc chamber 1, and the other end of antenna 5 stretches out outside arc chamber 1 to be connect with radio-frequency power supply 6, the top setting of arc chamber 1
There is the first air inlet pipe 7, the part that the first air inlet pipe 7 is put in arc chamber 1 is provided with multiple air holes 8, and the side wall of arc chamber 1 is set
It is equipped with the first support plate 9, the first vacuum pump 10 is installed in first support plate 9, the first vacuum pump 10 passes through the first exhaust tube 11
It is connect with arc chamber 1, the bottom of settling chamber 2 is provided with chip bench 12, and the side of settling chamber 2 is provided with the second air inlet pipe 13, sinks
The side wall of product room 2 is provided with the second support plate 14, and the second vacuum pump 15 is provided in the second support plate 14, and the second vacuum pump 15 is logical
The second exhaust tube 16 is crossed to connect with settling chamber 2.
The electromagnetic coil 4 is disk-type winding.Disk-type winding have it is small in size, distribution capacity is small, and inductance is big
The advantages of.
It is provided with first flowmeter 17 in first air inlet pipe 7, is provided with second in second air inlet pipe 13
Flowmeter 18.The effect of first flowmeter 17 be can air inflow in the first air inlet pipe of real-time monitoring 7, can control the first air inlet
The air inflow size of pipe 7；The effect of second flowmeter 18 be can air inflow in the second air inlet pipe of real-time monitoring 13, can control
The air inflow size of second air inlet pipe 13.
Third flowmeter 19 and shut-off valve 20 are provided on the connecting pipe 3.The effect of third flowmeter 19 is
Can real-time monitoring enter the gas flow of settling chamber 2 from arc chamber 1, shut-off valve 20 can adjust according to the data of third flowmeter 19
The air inflow of connecting pipe 3.
Glass window 21 is provided on the shell of the settling chamber 2.The effect of windowpane 21 is to observe at any time
Deposition process in settling chamber 2.
After adopting the above technical scheme, the utility model has the beneficial effect that it is not only simple in structure, design is reasonable, and
Deposition efficiency is high, and finished product is with high purity, high-quality.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, before not making the creative labor property
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of the utility model；
Fig. 2 is the cross-sectional view of the first air inlet pipe 7 in the utility model.
Description of symbols: arc chamber 1, settling chamber 2, connecting pipe 3, electromagnetic coil 4, antenna 5, radio-frequency power supply 6, first
Air inlet pipe 7, air hole 8, the first support plate 9, the first vacuum pump 10, the first exhaust tube 11, chip bench 12, the second air inlet pipe 13,
Second support plate 14, the second vacuum pump 15, the second exhaust tube 16, first flowmeter 17, second flowmeter 18, third flowmeter
19, shut-off valve 20, glass window 21.
Specific embodiment
Referring to shown in Fig. 1-Fig. 2, present embodiment the technical solution adopted is that: it include arc chamber 1, settling chamber 2,
Connecting pipe 3, electromagnetic coil 4, antenna 5, radio-frequency power supply 6, the first air inlet pipe 7, air hole 8, the first support plate 9, the first vacuum
Pump the 10, first exhaust tube 11, chip bench 12, the second air inlet pipe 13, the second support plate 14, the second vacuum pump 15, the second exhaust tube
16, arc chamber 1 is connected by connecting pipe 3 with settling chamber 2, and the two sides inner wall of arc chamber 1 is provided with electromagnetic coil 4, antenna 5
One end put in arc chamber 1, the other end of antenna 5 stretches out that arc chamber 1 is outer to be connect with radio-frequency power supply 6, and the top of arc chamber 1 is set
It is equipped with the first air inlet pipe 7, the part that the first air inlet pipe 7 is put in arc chamber 1 is provided with multiple air holes 8, the side wall of arc chamber 1
It is provided with the first support plate 9, the first vacuum pump 10 is installed in first support plate 9, the first vacuum pump 10 passes through the first exhaust tube
11 connect with arc chamber 1, and the bottom of settling chamber 2 is provided with chip bench 12, and the side of settling chamber 2 is provided with the second air inlet pipe 13,
The side wall of settling chamber 2 is provided with the second support plate 14, and the second vacuum pump 15, the second vacuum pump 15 are provided in the second support plate 14
It is connect by the second exhaust tube 16 with settling chamber 2.
The electromagnetic coil 4 is disk-type winding.Disk-type winding have it is small in size, distribution capacity is small, and inductance is big
The advantages of.
It is provided with first flowmeter 17 in first air inlet pipe 7, is provided with second in second air inlet pipe 13
Flowmeter 18.The effect of first flowmeter 17 be can air inflow in the first air inlet pipe of real-time monitoring 7, can control the first air inlet
The air inflow size of pipe 7；The effect of second flowmeter 18 be can air inflow in the second air inlet pipe of real-time monitoring 13, can control
The air inflow size of second air inlet pipe 13.
Third flowmeter 19 and shut-off valve 20 are provided on the connecting pipe 3.The effect of third flowmeter 19 is
Can real-time monitoring enter the gas flow of settling chamber 2 from arc chamber 1, shut-off valve 20 can adjust according to the data of third flowmeter 19
The air inflow of connecting pipe 3.
Glass window 21 is provided on the shell of the settling chamber 2.The effect of windowpane 21 is to observe at any time
Deposition process in settling chamber 2.
Working principle of the utility model is: in use, first Si substrate is cleaned with alcohol, acetone etc., by the Si lining after cleaning
Bottom is fixed on the chip bench 12 of settling chamber 2, while enabling the first vacuum pump 10 and the second vacuum pump 15, by arc chamber 1 and is sunk
Product room 2 is evacuated to vacuum state, and high-purity Ar gas is imported arc chamber 1 by the first air inlet pipe 7, opens radio-frequency power supply 6, electromagnetic wire
Circle 4 has built magnetic field environment after being powered, and realizes Helicon wave plasma electric discharge, forms Ar plasma, and Ar plasma is logical
It crosses connecting pipe 3 and moves to and finally reached in settling chamber 2 on the Si substrate placed on chip bench 12, realize Ar plasma to base
The cleaning of piece platform 12 and Si substrate is passed through high-purity CH4 into settling chamber 2 after the completion of chip bench 12 and the cleaning of Si substrate
In 12 front of chip bench, Ar plasma will be high-purity for 2 gas of gas and high-purity N, high-purity CH4 gas and 2 gas injection of high-purity N
2 gas ionization of CH4 gas and high-purity N forms N doping diamond-film-like on a si substrate.
The above is merely intended for describing the technical solutions of the present application, but not for limiting the present application, those of ordinary skill in the art couple
The other modifications or equivalent replacement that the technical solution of the utility model is made, without departing from technical solutions of the utility model
Spirit and scope should all cover in the scope of the claims of the utility model.
Claims (5)
1. spiral wave plasma vapor phase growing apparatus, it is characterised in that: it includes arc chamber (1), settling chamber (2), connecting pipe
(3), electromagnetic coil (4), antenna (5), radio-frequency power supply (6), the first air inlet pipe (7), air hole (8), the first support plate (9),
One vacuum pump (10), the first exhaust tube (11), chip bench (12), the second air inlet pipe (13), the second support plate (14), the second vacuum
(15), the second exhaust tube (16) are pumped, arc chamber (1) is connected by connecting pipe (3) with settling chamber (2), and the two of arc chamber (1)
Side inner wall is provided with electromagnetic coil (4), and one end of antenna (5) is put in arc chamber (1), and the other end of antenna (5) stretches out electric discharge
Room (1) is connect with radio-frequency power supply (6) outside, is provided at the top of arc chamber (1) the first air inlet pipe (7), and the first air inlet pipe (7) is put in
Part in arc chamber (1) is provided with multiple air holes (8), and the side wall of arc chamber (1) is provided with the first support plate (9), and first
It is equipped in support plate (9) the first vacuum pump (10), the first vacuum pump (10) is connected by the first exhaust tube (11) and arc chamber (1)
It connects, the bottom of settling chamber (2) is provided with chip bench (12), and the side of settling chamber (2) is provided with the second air inlet pipe (13), settling chamber
(2) side wall is provided with the second support plate (14), and the second vacuum pump (15), the second vacuum pump are provided in the second support plate (14)
(15) it is connect by the second exhaust tube (16) with settling chamber (2).
2. spiral wave plasma vapor phase growing apparatus according to claim 1, it is characterised in that: the electromagnetic coil
It (4) is disk-type winding.
3. spiral wave plasma vapor phase growing apparatus according to claim 1, it is characterised in that: first air inlet pipe
(7) it is provided on first flowmeter (17), is provided with second flowmeter (18) in second air inlet pipe (13).
4. spiral wave plasma vapor phase growing apparatus according to claim 1, it is characterised in that: the connecting pipe
(3) third flowmeter (19) and shut-off valve (20) are provided on.
5. spiral wave plasma vapor phase growing apparatus according to claim 1, it is characterised in that: the settling chamber (2)
Shell on be provided with glass window (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820884802.7U CN208472189U (en) | 2018-06-08 | 2018-06-08 | Spiral wave plasma vapor phase growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820884802.7U CN208472189U (en) | 2018-06-08 | 2018-06-08 | Spiral wave plasma vapor phase growing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208472189U true CN208472189U (en) | 2019-02-05 |
Family
ID=65216819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820884802.7U Expired - Fee Related CN208472189U (en) | 2018-06-08 | 2018-06-08 | Spiral wave plasma vapor phase growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208472189U (en) |
-
2018
- 2018-06-08 CN CN201820884802.7U patent/CN208472189U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190205 Termination date: 20190608 |