CN104671230A - Continuous collecting method of single-walled carbon nanotube film and special device - Google Patents

Abstract

The invention relates to a controllable and uniform collection technology of a single-wall carbon nanotube film, in particular to a continuous collection method and a special device for a single-wall carbon nanotube film grown by a floating catalyst method. The end of the chemical vapor deposition carbon nanotube growth furnace is designed to connect and install a ball valve switch and a film collection chamber. Without changing any growth conditions, it can directly and continuously collect high-quality single-walled carbon nanotube films on the surface of various film substrates. Under normal temperature and room pressure conditions, the single-walled carbon nanotube films grown by floating catalyst chemical vapor deposition are collected on the surface of various substrates. Through the regulation of deposition time and growth parameters, several inch-level, controllable density and Continuous Collection of Uniform Single-Walled Carbon Nanotube Films. Thus, the technical problems such as poor uniformity, small aspect ratio, and limited size faced in the current collection process of carbon nanotube films are solved.

Description

A continuous collection method and special device for single-walled carbon nanotube film

technical field

The invention relates to a controllable and uniform collection technology of a single-wall carbon nanotube film, in particular to a continuous collection method and a special device for a single-wall carbon nanotube film grown by a floating catalyst method.

Background technique

Due to their excellent electrical, optical and mechanical properties, single-walled carbon nanotubes are suitable for the preparation of transparent conductive films and flexible thin film transistor circuits. Single-walled carbon nanotube thin film electronic devices are expected to have broad application prospects in the fields of electronic paper, flexible batteries, electronic labels, flexible transparent displays, and even replacing silicon-based semiconductor materials in the future.

Currently, single-walled carbon nanotube films grown and collected by floating catalyst chemical vapor deposition have demonstrated attractive optoelectronic properties. [Document 1, Sun DM, Timmermans MY, Tian Y, Nasibulin AG, Kauppinen EI, Kishimoto S, Mizutani T, OhnoY, Nature Nanotechnology, 2011, 6(3) 156-161; Document 2, Sun DM, Timmermans MY, Kaskela A , Nasibulin AG, Kishimoto S, Mizutani T, Kauppinen EI, Ohno Y, Nature Communications, 2013, 4: 2302.]. The collection device designed is a needle-type microporous membrane filtration collection device, that is, a needle filter is installed at the exhaust end of the floating catalytic growth single-wall carbon nanotube device, and the generated single-wall carbon nanotube grows with the carrier gas flow out. device and deposited on a microporous membrane. Carbon nanotube films on filters can be transferred to substrates including plastic, glass, quartz, silicon wafers and metals. [Document 3, Nasibulin AG, Kaskela A, Mustonen K, Anisimov AS, Ruiz V, Kivsto S, Rackauskas S, Timmermans MY, Pudas, M, Aitchison B, Kauppinen M, Brown DP, Okhotnikov, OG, Kauppinen EI, ACS Nano, 2011, 5(4), 3214-3221].

The current main problems of this method are: (1) the shrinkage and enlargement of the diameter of the filter at the inlet and outlet will generate eddy currents, which will affect the uniform distribution of single-walled carbon nanotubes on the substrate; (2) the substrate material It is limited to porous filter membranes, and needs to be transferred according to the application, and pollutants will be introduced during the transfer process to affect the intrinsic properties of carbon nanotubes; (3) needle filters are installed on the exhaust pipe, and the distance between single-walled carbon nanotubes The tube growth chamber is far away, which leads to high-quality single-walled carbon nanotubes with a large aspect ratio and easy adhesion on the wall of the pipeline; while the length of single-walled carbon nanotubes in the collected film is relatively short, which significantly increases the The contact resistance between them leads to the decrease of carrier mobility, conductivity and other properties of the constructed device. Therefore, the main problem at present is how to shorten the distance between the collection chamber and the carbon nanotube growth chamber, avoid the eddy current phenomenon, and realize the collection of single-walled carbon nanotube films with high aspect ratio and uniform distribution to meet the requirements of high quality and high performance. demand for optoelectronic devices.

Contents of the invention

One of the purposes of the present invention is to provide a continuous collection method and special device for high-aspect-ratio single-walled carbon nanotube films to overcome the low aspect ratio of single-walled carbon nanotubes collected by floating catalyst chemical vapor deposition. problem.

The second object of the present invention is to provide a continuous collection method and special device for single-walled carbon nanotube films that are not limited by the shape and material of the substrate under normal temperature and pressure, so as to overcome the limitation of the existing single-piece filter membrane collection method on the substrate species and problems with the introduction of pollutants during transfer.

The third object of the present invention is to provide a uniform and density-controllable continuous collection method and special device for single-walled carbon nanotube films to overcome the problem of uneven distribution of carbon nanotube films existing in the current film collection methods.

Technical scheme of the present invention is:

A method for continuous collection of single-walled carbon nanotube films. A ball valve switch and a film collection chamber are designed and installed at the end of a chemical vapor deposition carbon nanotube growth furnace. , Continuously collect high-quality carbon nanotube films, and realize the collection of single-walled carbon nanotube films with uniform thickness and controllable thickness by adjusting the deposition time and carrier gas flow rate.

The film substrate of the single-walled carbon nanotube film continuous collection device is not limited, and the film substrate is a porous filter membrane, filter paper, PET plastic substrate, hard silicon wafer or quartz sheet, and the collected film is directly used as a transparent conductive film , transparent electrodes or channel materials for thin film transistors of optoelectronic devices.

The density of the single-walled carbon nanotube film is regulated by the collection time and the velocity of the carrier gas, and the light transmittance of the film is uniform and controllable below 99%.

The special device for the continuous collection method of the single-walled carbon nanotube film, the device includes a chemical vapor deposition carbon nanotube growth furnace, a film collection chamber, a vacuum pump, and a circulating water cooling device. The specific structure is as follows:

A single-wall carbon nanotube growth chamber is set in the chemical vapor deposition carbon nanotube growth furnace, and one end of the single-wall carbon nanotube growth chamber is sealed with the ball valve switch through a matching flange and the flange switch, and the other end of the ball valve switch is connected through a matching The flange and the flange switch are sealed and connected to one end of the film collection chamber, and the other end of the film collection chamber is sealed and connected to one end of the circuit through the matching flange and the flange switch; an air outlet is extended at the rear of the film collection chamber to connect to the vacuum pump , the vacuum pump is equipped with a vacuum pump gas circuit switch, the pumping system of the vacuum pump is controlled by the vacuum pump gas circuit switch, and a film-forming collection fixture and a film substrate are set in the film collection chamber; The wall carbon nanotube growth chamber communicates with the carrier gas outlet, and a circulating water cooling device is arranged on the outside of the single-wall carbon nanotube and the carrier gas outlet; a three-way valve and a bypass gas circuit switch are arranged on the circuit, and the two ports of the three-way valve are respectively connected to the The circuits are connected, and the third pass of the three-way valve is connected with the air outlet.

The film collection chamber is a circular tube with a uniform diameter or a circular tube with a variable diameter, and a groove is provided in the lumen for placing a film-forming collection fixture, and the film-formation collection fixture moves in the groove to adjust the film base to receive the film. The position of the film substrate is fixed by the pressing piece on the film-forming collection fixture.

The ball valve switch and the thin film collection chamber are respectively connected with the single-wall carbon nanotube growth chamber in the chemical vapor deposition carbon nanotube growth furnace without constant diameter.

The single-walled carbon nanotubes synthesized in the chemical vapor deposition carbon nanotube growth furnace flow to the film collection chamber with the carrier gas at a uniform speed, and are deposited on the prefabricated film substrate. When the film thickness reaches the requirement, close the ball valve switch, open the The three-way valve, dismantling the film-forming collection and fixing device, replacing the film substrate, turning on the vacuum pump to exhaust the air in the device, opening the ball valve switch, and repeating the above steps continuously collect the single-walled carbon nanotube film.

The single-walled carbon nanotube film collection chamber is installed on a horizontal or vertical chemical vapor deposition furnace to collect the carbon nanotube film.

The gas path switching during the growth and collection of the single-walled carbon nanotubes is realized through a three-way valve to ensure constant pressure in the system.

The film collection chamber is connected with a vacuum device to discharge the air entering from the outside due to the opening of the device to take out the substrate.

Design idea of the present invention is:

The single-walled carbon nanotubes synthesized by the floating catalyst chemical vapor deposition method are carried by the carrier gas, flow from the growth chamber to the collection chamber, and deposit on the substrate to form a film. The density of the single-walled carbon nanotubes on the substrate surface can be adjusted by adjusting the deposition time and air flow of the carbon nanotubes on the substrate. The continuous collection of films can be jointly controlled by the ball valve device and the three-way valve of the gas circuit, and the gas circuit switch can be adjusted to realize continuous collection of high-quality single-walled carbon nanotube films without affecting the growth parameters of carbon nanotubes. The collection chamber is installed at the end of the reaction furnace, which can realize the collection of single-walled carbon nanotubes with high aspect ratio. The substrate is designed to fix the thin film collection substrate through the slot design, so the substrate material is not limited. There is a water cooling device between the growth chamber and the collection chamber to ensure a constant temperature in the collection chamber.

Advantage of the present invention and beneficial effect are:

1. The continuous collection technology and special device of the single-walled carbon nanotube film involved in the present invention, compared with the needle filter method device generally used at present, can realize higher quality, large aspect ratio single-walled carbon nanotubes Direct film formation. There is no selectivity to the deposition substrate, that is, the single-walled carbon nanotube film can be deposited on any substrate, and the atmosphere in the reaction furnace will not be affected during the film collection process, ensuring that the growth of the single-walled carbon nanotube and the collection of the film are two The processes are independent and do not affect each other.

2. The device of the present invention is easy to disassemble and install, has good adaptability, and can be installed in different types of chemical vapor deposition furnaces such as vertical and horizontal. This method overcomes the current widespread use of a needle filter to collect carbon nanotubes from the chemical reaction furnace after the catheter is used to collect the turbulence effect of the air flow, resulting in uneven films. The high-quality single-walled carbon nanotube films obtained by this method can be Meet the application requirements of optoelectronic devices in different fields.

Description of drawings

Figure 1 is a schematic diagram of a continuous collection device for single-walled carbon nanotube films. In the figure, 1. Chemical vapor deposition carbon nanotube growth furnace; 2. Single-walled carbon nanotube growth chamber; 3. Carrier gas flow direction in the intake direction; 4. Flange switch; 5. Ball valve switch; 6. Film formation Collection fixture; 7. Film substrate; 8. Film collection chamber; 9. Flange switch; 10. Circuit; 11. Vacuum pump; 12. Vacuum pump air switch; 13. Air outlet direction; 14. Three-way valve; 15. 16. Circulating water cooling device.

Figure 2 is an optical photo of the single-walled carbon nanotube film collected on filter paper.

Figure 3 is an optical photo of the single-walled carbon nanotube film collected on the microporous filter membrane.

Figure 4 is an optical photograph of a single-walled carbon nanotube film collected on an aluminum foil.

Figure 5 is an optical photo of the single-walled carbon nanotube film collected on PET.

Figure 6 is a typical scanning electron micrograph of a single-walled carbon nanotube film. In the figure, (a) is a single-walled carbon nanotube film with a light transmittance of 97%; (b) is a single-walled carbon nanotube film with a light transmittance of 92%.

Fig. 7 is a device for collecting single-walled carbon nanotube films by a needle filter.

Figure 8 is an optical photo of the single-walled carbon nanotube film collected by the needle filter.

Fig. 9 is a scanning electron micrograph of a single-walled carbon nanotube film collected by a needle filter.

Detailed ways

In a specific embodiment, the continuous collection method and special device of the single-wall carbon nanotube film of the present invention are designed and installed at the tail end of the single-wall carbon nanotube growth chamber of the single-wall carbon nanotube film continuous collection device and a film collection chamber , under the premise of not changing any growth conditions, directly, closely and continuously collect high-quality carbon nanotube films on the surface of various substrates, and achieve uniform and thickness-controlled single-walled carbon films by adjusting the deposition time and carrier gas velocity. Collection of nanotube films.

The substrate collected by the single-walled carbon nanotube film is not limited by material and shape. The substrate can be: porous filter membrane, filter paper, PET plastic substrate, and hard silicon wafer, quartz wafer and other substrates. The collected film can be directly used as a transparent conductive film, a transparent electrode, or a channel material of a photoelectric device thin film transistor. Therefore, cumbersome transfer steps are omitted, impurity pollution and defect introduction are reduced, and the application requirements of various optoelectronic devices can be met.

The density of the single-walled carbon nanotube film can be adjusted by the collection time and the carrier gas flow rate, and the light transmittance of the film is uniform and controllable below 99%; due to the collection in the reaction furnace, the airflow is more stable, and the single-walled carbon nanotube film has excellent uniformity.

The film collection chamber is installed at the end of the single-walled carbon nanotube growth chamber, which shortens the distance for the single-walled carbon nanotubes to flow from the growth area to the collection area, and avoids the deposition of high aspect ratio carbon nanotubes on the tube wall, resulting in The technical problem of the small aspect ratio of the carbon nanotubes in the collected film can greatly reduce the contact resistance of the carbon nanotubes.

The diameter of the film collection chamber is variable, that is, film collection chambers with different diameters are designed according to the size of the device. The film collection chamber does not require external forces such as vacuuming during the process of collecting carbon nanotube films, so the film collection process does not change the gas composition, pressure and growth environment of single-walled carbon nanotubes in the reaction system, which ensures that the grown single-walled carbon nanotubes The structural uniformity and stability of the tube.

The single-wall carbon nanotube film collection chamber can be installed on different types of chemical vapor deposition carbon nanotube growth furnaces (floating catalyst chemical vapor deposition reaction furnaces) such as horizontal and vertical for carbon nanotube film collection. The gas path conversion during the growth and collection process is realized through a three-way valve to ensure a constant pressure in the system. Moreover, the film collection chamber is connected with a vacuum device, which can discharge the air entering from the outside due to the opening of the device to take out the substrate, so as to ensure the stability of the gas in the reaction furnace.

Next, the gas-phase continuous preparation and collection of the high-quality, uniform, and density-controllable single-walled carbon nanotube film of the present invention will be described in detail with reference to the accompanying drawings and examples.

As shown in Figure 1, the device for continuously collecting single-walled carbon nanotube films of the present invention mainly includes: a chemical vapor deposition carbon nanotube growth furnace 1, a single-walled carbon nanotube growth chamber 2, a carrier gas flow direction 3 in the intake direction, Flange switch 4, ball valve switch 5, film forming collection and fixing device 6, film substrate 7, film collection chamber 8, flange switch 9, circuit 10, vacuum pump 11, vacuum pump air circuit switch 12, gas outlet direction 13, three-way valve 14 , bypass gas circuit switch 15, circulating water cooling device 16, the specific structure is as follows:

The chemical vapor deposition carbon nanotube growth furnace 1 is provided with a single-wall carbon nanotube growth chamber 2, and one end of the single-wall carbon nanotube growth chamber 2 and the ball valve switch 5 is sealed and connected through a matching flange and the flange switch 4, and the ball valve switch 5 is sealed. The other end of the film collection chamber 8 is sealed with one end of the film collection chamber 8 through a matching flange and a flange switch, and the other end of the film collection chamber 8 is sealed with one end of the circuit 10 through a matching flange and a flange switch 9. An air outlet is extended at the rear of the film collection chamber 8 to connect to the vacuum pump 11. A vacuum pump air circuit switch 12 is arranged on the vacuum pump 11. The air pumping system of the vacuum pump 11 is controlled by the vacuum pump air circuit switch 12. Device 6 , film substrate 7 . The other end of the circuit 10 communicates with the single-walled carbon nanotubes of the single-walled carbon nanotubes growth chamber 2 and the carrier gas outlet (carrier gas flow direction 3 in the intake direction), and the outside of the single-walled carbon nanotubes and the carrier gas outlet is provided with circulating water cooling device 16. The circuit 10 is provided with a three-way valve 14 and a bypass gas path switch 15, and the two channels of the three-way valve 14 communicate with the circuit 10 respectively, and the third channel of the three-way valve 14 is connected with the air outlet (gas outlet direction 13), and the pipeline Gather at the three-way valve 14 and reach the air outlet.

The ball valve switch 5 and the film collection chamber 8 are respectively connected with the single-wall carbon nanotube growth chamber 2 in the chemical vapor deposition carbon nanotube growth furnace 1 without constant diameter, and the single-wall carbon nanotube growth chamber 2 is connected with the tube of the entire film collection chamber 8. The ports are connected by detachable flanges, and the distance is relatively short. The ball valve switch 5 and the pipe fitting are also connected by dismounting the flange, which ensures the flexible disassembly and installation of the components. The thin film collection chamber 8 can be a round tube with a uniform diameter or a round tube with a variable diameter, and a groove is arranged in it for placing the film-forming collection fixture 6, and the film-forming collection fixture 6 can move in the groove in the lumen to adjust The position where the film base 7 receives the film, and the film base 7 is fixed by the pressing piece on the film-forming collecting and fixing device 6 to ensure that it is not loose and stable during the film-forming process. The single-walled carbon nanotubes synthesized in the chemical vapor deposition carbon nanotube growth furnace 1 flow to the film collection chamber 8 at a constant speed with the carrier gas, and are deposited on the prefabricated film substrate 7. When the film thickness reaches the requirement, the ball valve switch 5, Open the bypass gas circuit switch 15, disassemble the film-forming collection and fixing device 6, replace the film substrate 7, turn on the vacuum pump 11 to exhaust the air in the device, and open the ball valve switch 5. By repeating the above steps, the single-walled carbon nanotube film can be collected continuously.

When working, the carbon source and catalyst precursor are passed into the chemical vapor deposition carbon nanotube growth furnace 1 along with the carrier gas, and the catalyst precursor is decomposed into catalyst nanoparticles in the high-temperature reaction zone, and then catalytically cracked in the single-wall carbon nanotube growth chamber 2 Carbon source for the synthesis of single-walled carbon nanotubes. The single-walled carbon nanotubes that generate are carried by the carrier gas (carrier gas flow direction 3 with the intake direction) and under the cooling of the circulating water cooling device 16, and enter the film collection chamber device with the rapid cooling of the carrier gas; open the ball valve switch 5, Close the bypass gas path switch 15, the gas enters the film collection chamber 8, and the single-walled carbon nanotubes form a film evenly on the film substrate 7. After the film thickness reaches the set requirement, close the ball valve switch 5; open the bypass gas path switch 15. Open the quick-release flange through the flange switch 9, take out the film-forming collection fixture 6, and take out the film substrate 7; install a new film substrate 7, turn on the vacuum pump gas circuit switch 12, and vacuum for a few seconds (generally 10~ 30 seconds) to exhaust the air, turn off the vacuum pump air circuit switch 12, and repeat the above operations to realize continuous film collection. The entire collection process will not damage the airtightness of the gas path, the growth environment of carbon nanotubes, etc., ensuring the uniformity and stability of the quality of carbon nanotubes; the film collection area is at normal temperature and pressure, and the film substrate 7 is fixed by a slot , ensuring the diversity of the material of the film substrate 7 .

The preparation of the single-walled carbon nanotubes of the present invention adopts a conventional chemical vapor deposition carbon nanotube growth furnace, specifically: hydrogen is used as a carrier gas, methane is used as a carbon source, ferrocene is used as a catalyst precursor, and elemental sulfur is used as a growth promoter. The mixture block of ferrocene and elemental sulfur is placed at the inlet of the reaction chamber at 60-80°C, and the growth temperature is 1100°C; when the single-walled carbon nanotubes enter the continuous growth stage, the film is collected.

Below, further illustrate the practicability of the present invention by embodiment.

Example 1

A horizontal chemical vapor deposition carbon nanotube growth furnace is adopted. The carrier gas flow rate of the chemical vapor deposition carbon nanotube growth furnace 1 is 2000ml/min. The film substrate is collected by filter paper, and the filter paper with a diameter of 50mm is placed in the film-forming collection fixture. 6, use the pressing piece in the film-forming collection and fixing device 6 to fix the edge of the filter paper, and put the film-forming and collecting and fixing device 6 into a suitable position inside the pipeline of the film collecting chamber 8, and then the film-forming and collecting and fixing device 6 is clamped by the inside of the pipeline. slot fixed. First, open the ball valve switch 5, close the vacuum pump gas circuit switch 12 and the bypass gas circuit switch 15, and collect the single-wall carbon nanotube film; after the collection, close the ball valve switch 5, turn on the vacuum pump gas circuit switch 12 and the bypass gas circuit switch 15. Open the flange through the flange switch 9, take out the film substrate sample, and put in a new filter paper substrate; open the ball valve switch 5 to collect the film. As a comparison, thin film samples with growth times of 30 seconds, 1 minute and 2 minutes were collected respectively. As shown in Figure 2, it can be seen that the color of the film becomes darker with the increase of collection time, but all three films are very uniform.

Example 2

A vertical chemical vapor deposition carbon nanotube growth furnace is adopted. The carrier gas flow rate of the chemical vapor deposition carbon nanotube growth furnace 1 is 4000ml/min, and the film substrate is collected by a microporous filter membrane. The experimental steps of Example 1 were repeated, and film samples with growth times of 1 minute, 2 minutes, and 3 minutes were collected respectively, as shown in FIG. 3 . Same as Example 1, the color of the film becomes darker with the increase of collection time, but all three films are very uniform.

Example 3

A vertical chemical vapor deposition carbon nanotube growth furnace was adopted, the carrier gas flow rate of the chemical vapor deposition carbon nanotube growth furnace 1 was 1000ml/min, and the film substrate was collected with aluminum foil. The experimental steps of Example 1 were repeated, and a film sample with a growth time of 1 minute was collected, as shown in FIG. 4 . The aluminum foil loaded with the carbon nanotube film is darker in color (right) compared to the aluminum foil without the carbon nanotube film (left).

Example 4

A vertical chemical vapor deposition carbon nanotube growth furnace is adopted, the carrier gas flow rate of the chemical vapor deposition carbon nanotube growth furnace 1 is 500ml/min, and the film substrate is collected by PET plastic (polyethylene terephthalate). The experimental steps of Example 1 were repeated, and a film sample with a growth time of 1 minute was collected, as shown in FIG. 5 , showing its high light transmittance.

Typical scanning electron micrographs of single-walled carbon nanotube films are shown in Figure 6. Figure 6(a) and Figure 6(b) are single-walled carbon nanotube films with light transmittance of 97% and 92%, respectively. It can be seen that Whether it is a thick film (92% light transmittance) or a thin film (97% light transmittance), the single-walled carbon nanotubes are uniformly distributed and interwoven into a network; and the single-walled carbon nanotubes are long and straight (above 20 μm), This illustrates the high quality of the collected SWNTs. The transparent conductive performance test of the single-walled carbon nanotube film collected by PET in Example 4 was found to have a sheet resistance of only 200Ω/sq under a high light transmittance of 93%. The above experimental results show that the film-forming and collecting fixture 4 provides a good foundation for realizing uniform collection of single-walled carbon nanotube films.

As a comparative example, the single-walled carbon nanotube film was collected by using the previous general-purpose single-sheet filter membrane needle filter collection device (Fig. 7), and the optical photo is as shown in Fig. 30 seconds, 10 seconds. Due to the rapid contraction of the airflow at the collection port of the single-piece membrane needle filter collection device and the turbulence of the airflow passing through the filter membrane, the uniformity of the collected film is poor, and with the increase of the film thickness, this inhomogeneity does not change. get any improvement. Figure 9 is a typical scanning electron micrograph of a single-walled carbon nanotube film collected by a needle filter. It can be seen that the average length of the single-walled carbon nanotube on the film is short (80%<5 μm), and it is more curved, indicating a longer The collection path leads to poor quality of collected SWNTs.

The results of the examples show that the gas-phase continuous film-forming technology of the single-walled carbon nanotube film proposed by the present invention realizes the continuous preparation and collection of uniform, density-controllable, high-quality single-walled carbon nanotube film under normal pressure and room temperature conditions. , which is of great significance to promote the practical application of single-walled carbon nanotube films in optoelectronic fields such as transparent conductive films and field-effect thin film transistors.

Claims (10)

1. A method for continuously collecting single-walled carbon nanotube films, characterized in that, a ball valve switch and a film collection chamber are designed and installed at the tail end of a chemical vapor deposition carbon nanotube growth furnace, without changing any growth conditions. Directly and continuously collect high-quality carbon nanotube films on the surface of various film substrates, and realize the collection of uniform and thickness-controllable single-walled carbon nanotube films by adjusting the deposition time and carrier gas flow rate. 2. according to the continuous collection method of single-walled carbon nanotube film according to claim 1, it is characterized in that, the film substrate of single-walled carbon nanotube film continuous collection device is not limited, and film substrate is porous filter membrane, filter paper, PET Plastic-like substrates, hard silicon wafers or quartz wafers, and the collected films are directly used as transparent conductive films, transparent electrodes, or channel materials for thin-film transistors of optoelectronic devices. 3. according to the continuous collection method of single-walled carbon nanotube film according to claim 1, it is characterized in that, the density of single-walled carbon nanotube film is regulated and controlled by collection time and carrier gas velocity, and film light transmittance is below 99% Uniform and controllable. 4. a kind of special-purpose device of the continuous collection method of single-walled carbon nanotube film according to claim 1, is characterized in that, this device comprises chemical vapor deposition carbon nanotube growth furnace, film collection chamber, vacuum pump, circulating water cooling device, The specific structure is as follows: A single-wall carbon nanotube growth chamber is set in the chemical vapor deposition carbon nanotube growth furnace, and one end of the single-wall carbon nanotube growth chamber is sealed with the ball valve switch through a matching flange and the flange switch, and the other end of the ball valve switch is connected through a matching The flange and the flange switch are sealed and connected to one end of the film collection chamber, and the other end of the film collection chamber is sealed and connected to one end of the circuit through the matching flange and the flange switch; an air outlet is extended at the rear of the film collection chamber to connect to the vacuum pump , the vacuum pump is equipped with a vacuum pump gas circuit switch, the pumping system of the vacuum pump is controlled by the vacuum pump gas circuit switch, and a film-forming collection fixture and a film substrate are set in the film collection chamber; The wall carbon nanotube growth chamber communicates with the carrier gas outlet, and a circulating water cooling device is arranged on the outside of the single-wall carbon nanotube and the carrier gas outlet; a three-way valve and a bypass gas circuit switch are arranged on the circuit, and the two ports of the three-way valve are respectively connected to the The circuits are connected, and the third pass of the three-way valve is connected with the air outlet. 5. according to the special-purpose device of the continuous collection of single-walled carbon nanotube film according to claim 4, it is characterized in that, the film collection chamber is a circular tube with a uniform diameter or a circular tube with a variable diameter, and grooves are provided in its lumen for The film-forming collection fixture is placed, and the film-forming collection fixture moves in the groove to adjust the position of the film substrate receiving the film, and the film substrate is fixed by the pressing piece on the film-forming collection fixture. 6. according to the special-purpose device of the continuous collection of single-walled carbon nanotube film according to claim 4, it is characterized in that, ball valve switch, film collection chamber grow with the single-walled carbon nanotube in the chemical vapor deposition carbon nanotube growth furnace respectively The chambers are not connected by diameter. 7. according to the special-purpose device of the continuous collection of single-walled carbon nanotube film according to claim 4, it is characterized in that, the single-walled carbon nanotube synthesized in the chemical vapor deposition carbon nanotube growth furnace flows to the film collection at a uniform velocity with the carrier gas chamber, and deposited on the prefabricated film substrate, when the film thickness reaches the requirement, close the ball valve switch, open the three-way valve, disassemble the film-forming collection fixture, replace the film substrate, turn on the vacuum pump to exhaust the air in the device, and open the ball valve switch. By repeating the above steps, the single-walled carbon nanotube films were continuously collected. 8. according to the special device of the continuous collection of single-walled carbon nanotube film according to claim 4, it is characterized in that, the film collection chamber of single-walled carbon nanotube is installed on horizontal or vertical chemical vapor deposition furnace to carry out carbon nanometer Tube film collection. 9. According to the special device for the continuous collection of single-walled carbon nanotube films according to claim 4, it is characterized in that the gas path conversion in the growth and collection process of single-walled carbon nanotubes is realized by a three-way valve to ensure the pressure in the system constant. 10. The special device for continuous collection of single-walled carbon nanotube films according to claim 4, characterized in that the film collection chamber is connected with a vacuum device to discharge the air that enters from the outside because the device is opened to take out the substrate.