CN102424956B - Spraying apparatus for metal-organic chemical vapor deposition equipment - Google Patents
Spraying apparatus for metal-organic chemical vapor deposition equipment Download PDFInfo
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- CN102424956B CN102424956B CN 201110398227 CN201110398227A CN102424956B CN 102424956 B CN102424956 B CN 102424956B CN 201110398227 CN201110398227 CN 201110398227 CN 201110398227 A CN201110398227 A CN 201110398227A CN 102424956 B CN102424956 B CN 102424956B
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Abstract
The present invention discloses a spraying apparatus for metal-organic chemical vapor deposition (MOCVD) equipment. The apparatus comprises at least two transportation channels. Each transportation channel comprises air inlets, a cavity and through holes, wherein the air inlets, the cavity and the through holes are communicated. The positions between the through holes of all the transportation channels are the nested structures. According to the present invention, the uniform mixing effect of a plurality of gases can be improved by the spraying apparatus for the MOCVD equipment.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of spray equipment for the organometallics chemical vapor depsotition equipment.
Background technology
Organometallics chemical vapour deposition Metal-organic Chemical Vapor Deposition, MOCVD is applied to technical field of manufacturing semiconductors, in order to deposit film.
MOCVD is as the wafer growth material with hydride of the organic compound of III family, II family element and V, VI family element etc., in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.That is to say, in the MOCVD technology, will use two kinds of gases at least.
Reaction chamber is a primary member of MOVCD equipment, and mainly the spray equipment by setting it on is transferred to two kinds or two or more gas in the reaction chamber uniformly, with the wafer generation chemical reaction that is positioned in the reaction chamber, deposit film.In order to guarantee the quality of wafer deposit film, in MOCVD technology, satisfy two or more gas after entering reaction chamber, arrive before the wafer and do not react between the gas and gas as far as possible, and can mix behind the arrival wafer, concurrent biochemical reaction, the structure design of spray equipment is very crucial for this reason.
Spray equipment with transmitting two paths gas is example, when spray equipment will guarantee that namely two-way gas independently transports, can make two-way gas that mixed uniformly condition is arranged after leaving spray header again.The spray equipment of prior art comprises by first inlet mouth, first house steward who is communicated with first inlet mouth, first transfer passage that the multi-ribbon that is communicated with first house steward has first arm of air outlet to constitute; And by second inlet mouth, second house steward who is communicated with second inlet mouth, second transfer passage that the multi-ribbon that is communicated with second house steward has second arm of air outlet to constitute; And first arm and second arm are staggered.Though the spray equipment of this kind structure can be realized the independent of two-way gas and carry, but two-way gas is transported to crystal column surface with first transfer passage, the staggered mode of second transfer passage, when two-way gas mixes, because the restriction of the dimensional structure of first arm and second arm, make the dimensional thickness of be separated by when mixing between the two-way gas first arm and second arm, then make the mixed uniformly effect of two-way gas relatively poor.
Summary of the invention
Technical problem to be solved by this invention is, overcomes above deficiency, and a kind of spray equipment that is used for the organometallics chemical vapor depsotition equipment that can improve the gas mix uniformly effect is provided.
In order to solve the problems of the technologies described above, technical scheme of the present invention is: a kind of spray equipment for the organometallics chemical vapor depsotition equipment comprises at least two transfer passages, described every conveying.Passage comprises inlet mouth, cavity, the through hole of connection, is nesting structure between the through hole of described all transfer passages and the through hole.
Further, described transfer passage is two, comprises by first inlet mouth, first cavity, many first transfer passages that first through hole is communicated with; And by second inlet mouth, second cavity, many second transfer passages that second through hole is communicated with; Described first through hole is circular port or square opening, and its bottom is first air outlet, and described second through hole is circular port or square opening, and its bottom is second air outlet, and described first air outlet and described second air outlet are at grade; Correspondence is nested with first through hole in described every second through hole.
Further, described transfer passage is two, comprises by first inlet mouth, first cavity, many first transfer passages that first through hole is communicated with; And by second inlet mouth, second cavity, many second transfer passages that second through hole is communicated with; Described first through hole is circular port or square opening, and its bottom is first air outlet, and described second through hole is slotted hole, and its bottom is second air outlet, and described first air outlet and described second air outlet are at grade; Correspondence is nested with many first through holes in described every second through hole.
Further, described transfer passage is two, comprises by first inlet mouth, first cavity, many first transfer passages that first through hole is communicated with; And by second inlet mouth, second cavity, many second transfer passages that second through hole is communicated with; Described first through hole is slotted hole, and its bottom is first air outlet, and described second through hole is slotted hole, and its bottom is second air outlet, and described first air outlet and described second air outlet are at grade; Correspondence is nested with first groove in described every second through hole.
Further, described second through hole all is the circle configurations arrangement.
Further, described second through hole all is the radial structure arrangement.
Further, described second through hole all is the parallel construction arrangement.
Further, also be provided with the first homogenizing plate that has a plurality of through holes in described first cavity.
Further, also be provided with the second homogenizing plate that has a plurality of through holes in described second cavity.
Compared with prior art, the invention has the advantages that: every transfer passage of the present invention, for delivery of one road gas; Be nesting structure between the through hole of many transfer passages and the through hole, then will be adjacent between the gas of the through hole of adjacent conveyor passage output and the gas very near, between the through hole of nesting structure and the through hole when delivering gas, the dimensional thickness that only has the through hole that is nested in innermost layer, when adopting same size thickness through hole output gas, the gas of the present invention's output is owing to lacked the dimensional thickness of a specification than prior art, therefore when adopting delivering gas of the present invention, can make the mixed effect of gas more even.
Description of drawings
Figure 1A is the syndeton synoptic diagram of the embodiment of the invention and gas distribution member;
Figure 1B is the sectional view of the embodiment of the invention 1;
Fig. 1 C is the embodiment of the invention 1 gas flow synoptic diagram;
Fig. 2 A is the local section structural representation of the embodiment of the invention 1;
Fig. 2 B is that the embodiment of the invention 1 is the nesting structure top plan view that is arranged in parallel;
Fig. 3 A is the local section structural representation of the embodiment of the invention 2;
Fig. 3 B is the nesting structure top plan view that the embodiment of the invention 2 is radial array;
Fig. 4 embodiment of the invention 3 is the nesting structure top plan view of circumferential arrangement;
Fig. 5 is the schematic perspective view of the embodiment of the invention 1, embodiment 2 and embodiment 3 nesting structures;
Fig. 6 A is the local section structural representation of the embodiment of the invention 4;
Fig. 6 B is that the embodiment of the invention 4 is the nesting structure top plan view that is arranged in parallel;
Fig. 7 A is the local section structural representation of the embodiment of the invention 5;
Fig. 7 B is the nesting structure top plan view that the embodiment of the invention 5 is radial array;
Fig. 8 is the schematic perspective view of the embodiment of the invention 3, embodiment 4 and embodiment 5 nesting structures.
Shown in the figure: 111, first inlet mouth, 112, first cavity, 113, first through hole, 114, the first homogenizing plate, 121, second inlet mouth, 122, second cavity, 124, the second homogenizing plate, 133, first groove, 300, gas distribution member.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail:
The present invention is used for the spray equipment of organometallics chemical vapor depsotition equipment, comprise at least two transfer passages, described every transfer passage comprises inlet mouth, cavity, the through hole of connection, is nesting structure between the through hole of described all transfer passages and the through hole.
Embodiment 1
Figure 1A is the syndeton synoptic diagram of the embodiment of the invention and gas distribution member.The spray equipment upper end that the present invention is used for the organometallics chemical vapor depsotition equipment is connected with gas distribution member 300.
Figure 1B is the sectional view of the embodiment of the invention 1.
Fig. 1 C is the embodiment of the invention 1 gas flow synoptic diagram.
Fig. 2 A is the local section structural representation of the embodiment of the invention 1.
Fig. 2 B is that the embodiment of the invention 1 is the nesting structure top plan view that is arranged in parallel.
Please refer to Figure 1A, 1B, 1C, 2A, 2B, present embodiment 1 is used for the spray equipment of organometallics chemical vapor depsotition equipment, adopt two transfer passages, comprise by first inlet mouth 111, first cavity 112, many first transfer passages that first through hole 113 is communicated with, described first through hole 113 is circular port, and its bottom is first air outlet; And by second inlet mouth 121, second cavity 122, many second transfer passages that second through hole 123 is communicated with, described second through hole 123 is slotted hole, and its bottom is second air outlet, and described first air outlet and described second air outlet are at grade; Correspondence is nested with many first through holes 113 in described every second through hole 123.Be that every second through hole 123 many first through holes 113 corresponding with it form nesting structure.Then through too much bar first through hole 113 and the gas that leaves from first air outlet and the dimensional thickness specification that only has first through hole 113 through second through hole 123 and the gas that leaves from second air outlet, and two dimensional thickness specifications of existence in the prior art, therefore, present embodiment 1 can make two-way gas reach mix uniformly effect preferably when carrying two-way gas.
The nesting structure of present embodiment 1 please refer to frame of broken lines part and Fig. 2 B among Fig. 2 A.
Wherein, Fig. 1 C is the embodiment of the invention 1 gas flow synoptic diagram.Gas is provided by gas distribution member 300.The block arrows flow direction is the gas flow synoptic diagram of first transfer passage among the figure; Empty body arrow flow direction is the gas flow synoptic diagram of second transfer passage.
As preferred implementation, described second through hole 123 all is parallel construction to be arranged, and please refer to Fig. 2 B.And parallel construction, be convenient to make processing.
As preferred implementation, described first through hole 113 can be circular port, also can be square opening, can also be leg-of-mutton hole, as long as gas is carried uniformly, the form of first through hole 113 can be arbitrary form.
As preferred implementation, also be provided with the first homogenizing plate 114 that has a plurality of through holes in described first cavity 112.The first homogenizing plate 114, the gas that enters in first cavity 112 from first inlet mouth 111 is transported in many first through holes 113 uniformly, thereby make the processing that just begins a homogenizing through the gas of first transfer passage from the upper end, improve from the uniformity coefficient of the gas of first air outlet output.
As preferred implementation, also be provided with the second homogenizing plate 124 that has a plurality of through holes in described second cavity 122.The second homogenizing plate 124, the gas that second inlet mouth 121 is entered in first cavity 122 is transported in many second through holes 123 uniformly, thereby make the processing that just begins a homogenizing through the gas of second transfer passage from the upper end, improve from the uniformity coefficient of the gas of second air outlet output.
As preferred implementation, described first inlet mouth 111 and 121 all can be for a plurality of.
Embodiment 2
Fig. 3 A is the local section structural representation of the embodiment of the invention 2.
Fig. 3 B is the nesting structure top plan view that the embodiment of the invention 2 is radial array.
Please refer to Fig. 3 A to 3B, present embodiment 2 is to improve on the basis of embodiment 1 to form, and its difference is: described second through hole 123 all is radial structure to be arranged, rather than is the parallel construction arrangement.
The nesting structure of present embodiment 2 please refer to frame of broken lines part and Fig. 3 B among Fig. 3 A.
Embodiment 3
Fig. 4 is the top plan view that the embodiment of the invention 3 is the nesting structure of circumferential arrangement.Present embodiment 3 is to improve on the basis of embodiment 1 or 2 to form, and its difference is: described second through hole 123 is and is circle configurations and arranges, rather than radial structure is arranged or is arranged in parallel.Namely second through hole 123 is an outside expansion of enclosing.First through hole 113 is evenly distributed in second through hole 123 of every circle.
Fig. 5 is the schematic perspective view of the nesting structure of above two or three kind of embodiment 1, embodiment 2 and embodiment 3.Please refer to Fig. 5, the nesting structure of every corresponding many first through holes 113 with it of second through hole 123, namely every second through hole 123 is embedded is with many first through holes 113.First through hole 113 can be circular port, square opening or trilateral etc., and second through hole 123 is slotted hole.That is to say, more than the nesting structure of three kinds of embodiment be the slotted eye nesting structure.
Embodiment 4
Fig. 6 A is the local section structural representation of the embodiment of the invention 4.
Fig. 6 B is that the embodiment of the invention 4 is the nesting structure top plan view that is arranged in parallel.
Please refer to Fig. 6 A to 6B, present embodiment 4 is to improve on the basis of embodiment 1 to form, and its difference is: described first through hole 113 and second through hole 123 are slotted hole, and every second through hole, 123 correspondences are nested with first through hole 113.
The nesting structure of present embodiment 4 please refer to frame of broken lines part and Fig. 6 B among Fig. 6 A.
Present embodiment 4 every second through hole, 123 correspondences are nested with first through hole 113, and namely every second through hole 123 first through hole 113 corresponding with it forms nesting structure.
Second through hole 123 of present embodiment 4 is arranged for being parallel construction, shown in Fig. 6 B.
Embodiment 5
Fig. 7 A is the local section structural representation of the embodiment of the invention 5.
Fig. 7 B is the nesting structure top plan view that the embodiment of the invention 5 is radial array.
Please refer to Fig. 7 A to 7B, present embodiment 5 is to improve on the basis of embodiment 4 to form, and its difference is: the structure of second through hole 123 is arranged for being radial structure, arranges but not be parallel construction, shown in Fig. 7 B.
The nesting structure of present embodiment 5 please refer to frame of broken lines part and Fig. 7 B among Fig. 7 A.
Embodiment 6
Present embodiment 6 is to improve on the basis of embodiment 3 or 4 to form, and its difference is: described second through hole 123 all is circle configurations and arranges.Present embodiment 6 is only for its technical scheme has been described, and is not shown.
Fig. 8 is the schematic perspective view of above embodiment 4, embodiment 5 and embodiment 6 nesting structures.Please refer to Fig. 8, every second through hole 123 is embedded to be with first through hole 113, and first through hole 113 and second through hole 123 are slotted hole.That is to say that the nesting structure of above embodiment is groove groove nesting structure.
Embodiment 7
Present embodiment 7 is with the difference of embodiment 1: described second through hole is circular port or square opening.Namely the nesting structure of first through hole and second through hole is hole, hole nesting structure.
Above embodiment 1 to embodiment 7 all adopts two transfer passages, but the bar number of transfer passage is not limited to two, can also be three, four, five etc.
Every transfer passage of the present invention is for delivery of one road gas; Be nesting structure between the through hole of many transfer passages and the through hole, then will be adjacent between the gas of the through hole of adjacent conveyor passage output and the gas very near, between the through hole of nesting structure and the through hole when delivering gas, the dimensional thickness that only has the through hole that is nested in innermost layer, when adopting same size thickness through hole output gas, the gas of the present invention's output is owing to lacked the dimensional thickness of a specification than prior art, therefore when adopting delivering gas of the present invention, can make the mixed effect of gas more even.
Claims (7)
1. spray equipment that is used for the organometallics chemical vapor depsotition equipment, it is characterized in that: comprise at least two transfer passages, described every transfer passage comprises inlet mouth, cavity, the through hole of connection, is nesting structure between the through hole of described all transfer passages and the through hole;
Described transfer passage is two, comprises first transfer passage that is communicated with by first inlet mouth (111), first cavity (112), many first through holes (113); And second transfer passage that is communicated with by second inlet mouth (121), second cavity (122), many second through holes (123); Described first through hole (113) is circular port or square opening, and its bottom is first air outlet, and described second through hole (123) is slotted hole, and its bottom is second air outlet, and described first air outlet and described second air outlet are at grade; The interior correspondence of described every second through hole (123) is nested with many first through holes (113).
2. spray equipment that is used for the organometallics chemical vapor depsotition equipment, it is characterized in that: comprise at least two transfer passages, described every transfer passage comprises inlet mouth, cavity, the through hole of connection, is nesting structure between the through hole of described all transfer passages and the through hole;
Described transfer passage is two, comprises first transfer passage that is communicated with by first inlet mouth (111), first cavity (112), many first through holes (113); And second transfer passage that is communicated with by second inlet mouth (121), second cavity (122), many second through holes (123); Described first through hole (113) is slotted hole, and its bottom is first air outlet, and described second through hole (123) is slotted hole, and its bottom is second air outlet, and described first air outlet and described second air outlet are at grade; The interior correspondence of described every second through hole (123) is nested with first groove (133).
3. spray equipment according to claim 1 and 2 is characterized in that: described second through hole (123) all is radial structure and arranges.
4. spray equipment according to claim 1 and 2 is characterized in that: described second through hole (123) all is parallel construction and arranges.
5. spray equipment according to claim 1 and 2 is characterized in that: described second through hole (123) all is circle configurations and arranges.
6. spray equipment according to claim 1 and 2 is characterized in that: also be provided with the first homogenizing plate (114) that has a plurality of through holes in described first cavity (112).
7. spray equipment according to claim 1 and 2 is characterized in that: also be provided with the second homogenizing plate (124) that has a plurality of through holes in described second cavity (122).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110398227 CN102424956B (en) | 2011-12-02 | 2011-12-02 | Spraying apparatus for metal-organic chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110398227 CN102424956B (en) | 2011-12-02 | 2011-12-02 | Spraying apparatus for metal-organic chemical vapor deposition equipment |
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| Publication Number | Publication Date |
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| CN102424956A CN102424956A (en) | 2012-04-25 |
| CN102424956B true CN102424956B (en) | 2013-07-10 |
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| CN 201110398227 Expired - Fee Related CN102424956B (en) | 2011-12-02 | 2011-12-02 | Spraying apparatus for metal-organic chemical vapor deposition equipment |
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Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9447499B2 (en) | 2012-06-22 | 2016-09-20 | Novellus Systems, Inc. | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery |
| US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
| US9677176B2 (en) | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
| TWI527626B (en) * | 2014-01-15 | 2016-04-01 | 財團法人工業技術研究院 | Showerhead device |
| CN106011789B (en) * | 2015-03-26 | 2018-08-10 | 中晟光电设备（上海）股份有限公司 | MOCVD systems and its reaction gas conveying device |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
| KR20200087267A (en) | 2017-12-08 | 2020-07-20 | 램 리써치 코포레이션 | Integrated showerhead with improved hole pattern to deliver radical and precursor gases to the downstream chamber to enable remote plasma film deposition |
| FI128427B (en) * | 2018-04-12 | 2020-05-15 | Beneq Oy | Nozzle head and apparatus |
| TWI730532B (en) * | 2018-12-18 | 2021-06-11 | 大陸商北京北方華創微電子裝備有限公司 | Chamber air inlet structure and reaction chamber |
| CN109637952A (en) * | 2018-12-18 | 2019-04-16 | 北京北方华创微电子装备有限公司 | Chamber air intake structure and reaction chamber |
| CN111321463B (en) * | 2020-03-06 | 2021-10-15 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| CN115513033A (en) * | 2022-09-09 | 2022-12-23 | 江苏微导纳米科技股份有限公司 | Spraying assembly, semiconductor equipment and wafer processing method |
| CN117418217B (en) * | 2023-12-18 | 2024-08-27 | 上海谙邦半导体设备有限公司 | Uniform gas device and chemical vapor deposition uniform gas system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1292092C (en) * | 2004-04-01 | 2006-12-27 | 南昌大学 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
| KR20090078538A (en) * | 2008-01-15 | 2009-07-20 | 삼성전기주식회사 | Showerhead and chemical vapor deposition apparatus having the same |
| CN101914761B (en) * | 2010-08-16 | 2012-04-25 | 江苏中晟半导体设备有限公司 | Device for controlling delivery and uniform distribution of reaction gases in MOCVD reaction chamber |
| CN102230165A (en) * | 2011-06-16 | 2011-11-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Spray header structure for chemical vapor deposition epitaxial equipment |
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