CN218842322U - MOCVD crystal growth equipment - Google Patents
MOCVD crystal growth equipment Download PDFInfo
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- CN218842322U CN218842322U CN202223248851.7U CN202223248851U CN218842322U CN 218842322 U CN218842322 U CN 218842322U CN 202223248851 U CN202223248851 U CN 202223248851U CN 218842322 U CN218842322 U CN 218842322U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a long brilliant equipment of MOCVD. The utility model discloses a long brilliant equipment of MOCVD includes gas transmission cavity, pipeline assembly and deposition cavity, and wherein, gas transmission cavity includes a plurality of chambeies that hold, and gas transmission cavity and deposition cavity pass through the pipeline assembly intercommunication. The introduction of the source gases into the respective receiving cavities allows the source gases to be isolated from each other before reaching the deposition chamber, thereby avoiding pre-reaction of the organic sources during transport. And the gas outlet surface above the deposition chamber is at least partially obliquely arranged relative to the tray, and the three gases flowing out from the pipeline port on the gas outlet surface are mixed and deposited downwards along the parabolic track, so that the gas mixing degree is more uniform, and the quality of growing single crystals can be improved.
Description
Technical Field
The utility model relates to a crystal growth equipment technical field, concretely relates to crystal growth equipment of MOCVD.
Background
Metal-organic Chemical Vapor Deposition (MOCVD), a novel Vapor phase epitaxy growth technique for preparing compound single crystal films, was in practical use in the early 80 s of the last century. The three-group source gas and the five-group source gas are taken as raw materials for growing the crystal, and are rapidly conveyed to a reaction chamber through a carrier gas to react above a substrate in a thermal decomposition mode, so that the crystal is deposited and formed.
The existing MOCVD equipment for preparing the single crystal film mainly has the following two problems: firstly, since the group iii source gas is difficult to diffuse uniformly, it cannot be mixed with the carrier gas and the group v source gas sufficiently, resulting in uneven growth of the surface of the single crystal thin film, and secondly, the MOCVD technique is mainly to form crystals by reacting the group iii source gas with the group v source gas, so that the group iii source gas reacts with the group v source gas when contacting the group v source gas, resulting in deposition of crystals in the gas transport pipeline.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a long brilliant equipment of MOCVD.
An MOCVD crystal growth device is characterized in that: the method comprises the following steps: a conduit assembly, a gas delivery chamber, and a deposition chamber;
the pipeline assembly comprises a plurality of pipeline groups, and each pipeline group comprises a plurality of transmission pipelines respectively;
the gas transmission chamber comprises a plurality of accommodating cavities, and each accommodating cavity is respectively and independently communicated with the corresponding pipeline group;
the deposition chamber comprises a gas outlet surface and a base;
the air outlet surface is provided with a plurality of openings, and each opening is correspondingly connected with one transmission pipeline;
the base is connected with the air outlet surface, and a tray for accommodating a substrate to be deposited or an epitaxial wafer is arranged in the base;
wherein, the air outlet surface is at least partially arranged obliquely relative to the tray.
Preferably, the plurality of accommodating chambers include a first accommodating chamber, a carrier gas accommodating chamber and a second accommodating chamber; the plurality of pipeline groups comprise a first pipeline group consisting of a plurality of first transmission pipelines, a carrier gas pipeline group consisting of a plurality of carrier gas transmission pipelines and a second pipeline group consisting of second transmission pipelines;
the first accommodating cavity comprises a first air inlet arranged at the top and a first air outlet area arranged at the bottom, a plurality of openings are formed in the first air outlet area, and each opening is connected with one first transmission pipeline;
the carrier gas accommodating cavity comprises a carrier gas outlet area arranged at the bottom, a plurality of openings are formed in the carrier gas outlet area, and each opening is connected with one carrier gas conveying pipeline;
the second accommodating cavity comprises a second gas outlet area arranged at the bottom, a plurality of openings are formed in the second gas outlet area, and each opening is connected with one second transmission pipeline.
Preferably, the first accommodating cavity further comprises a guide plate arranged in the first accommodating cavity, the guide plate is provided with a plurality of small holes, and the aperture of the small hole at the edge of the guide plate is larger than that of the small hole at the center of the guide plate.
Preferably, the diameter of the first conveying pipeline is smaller than that of the carrier gas conveying pipeline; the diameter of the carrier gas conveying pipeline is smaller than that of the second conveying pipeline.
Preferably, the carrier gas containing cavity and the second containing cavity further respectively comprise a carrier gas inlet and a second gas inlet, and the carrier gas inlet and the second gas inlet are annular openings formed in the side wall.
Preferably, the first gas inlet, the carrier gas inlet and the second gas inlet are respectively connected with a gas inlet pipeline, and the gas inlet pipeline is streamlined.
Preferably, the conduit assemblies are distributed in the same manner over the gas delivery chamber and the deposition chamber, the distribution comprising: square column distribution, surrounding lamination distribution.
Preferably, the conduit assembly is connected following a proximity rule when connecting the gas delivery chamber and the deposition chamber.
Preferably, the air outlet face is inclined at an angle of 30 ° to 60 ° with respect to the obliquely arranged portion of the tray; and/or the gases ejected from the gas outlet face are fused with each other during the deposition process.
Preferably, the bottom of the cavity surrounded by the air outlet surface is square or round and becomes smaller from bottom to top in sequence.
The utility model has the advantages that: the utility model discloses a long brilliant equipment of MOCVD includes gas transmission cavity, pipeline assembly and deposition cavity, and wherein, gas transmission cavity includes a plurality of chambeies that hold, and gas transmission cavity and deposition cavity pass through the pipeline assembly intercommunication. The introduction of the source gases into the respective receiving cavities allows the source gases to be isolated from each other before reaching the deposition chamber, thereby avoiding pre-reaction of the organic sources during transport. And the gas outlet surface above the deposition chamber is at least partially obliquely arranged relative to the tray, and the three gases flowing out from the pipeline port on the gas outlet surface are mixed and deposited downwards along the parabolic track, so that the gas mixing degree is more uniform, and the quality of growing single crystals can be improved.
Drawings
Fig. 1 is a schematic plan view of the MOCVD crystal growth equipment of the present invention.
Fig. 2 is a schematic view of the gas inlet mode of the MOCVD crystal growth equipment.
Fig. 3 is a schematic view of the streamlined air intake mode of the present invention.
Fig. 4 is a schematic diagram of the arrangement of the pipe assembly according to the present invention.
Fig. 5 is a schematic view of the air outlet surface with the arc-shaped side wall of the present invention.
The reference numbers in the figures illustrate: 1. a gas delivery chamber; 110. a first accommodating chamber; 120. a carrier gas accommodating chamber; 130. a second accommodating chamber; 101. a baffle; 102. a first gas outlet zone; 103. a first transfer conduit; 104. a carrier gas outlet area; 105. a carrier gas delivery pipeline; 106. a second gas outlet zone; 107. a second transport pipe; 111. a first air inlet; 112. a carrier gas inlet; 113. a second air inlet; 2. a conduit assembly; 3. a deposition chamber; 301. a gas outlet surface; 302. a base.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and can implement the present invention, but the embodiments are not limited to the present invention.
As shown in fig. 1, the MOCVD crystal growth equipment of the present invention comprises: the device comprises a pipeline assembly, a gas transmission chamber and a deposition chamber;
the conduit assembly includes a plurality of conduit sets; each pipeline group comprises a plurality of transmission pipelines;
the gas transmission chamber 1 comprises a plurality of accommodating cavities, and each accommodating cavity is respectively and independently communicated with a corresponding pipeline group;
a deposition chamber 3 comprising: a gas outlet surface 301 and a base 302;
the air outlet surface 301 is provided with a plurality of openings, and each opening is correspondingly connected with a transmission pipeline;
a base 302 connected with the gas outlet surface 301, wherein the base can be used for accommodating a tray of a substrate or an epitaxial wafer to be deposited;
wherein the gas exit surface 301 is at least partially disposed obliquely with respect to the tray, so that the three source gases flowed in from the transfer pipe connected to the gas exit surface 301 are deposited in the deposition chamber 3 in a parabolic trajectory.
In one embodiment of the present invention, the gas transfer chamber includes a first receiving chamber 110, a carrier gas receiving chamber 120, and a second receiving chamber 130; the pipeline assembly is a set of all transmission pipelines, and the transmission pipelines are divided into a first pipeline group, a carrier gas pipeline group and a second pipeline group according to different connection accommodating cavities; wherein, the first pipeline group is communicated to the first containing cavity and is a collection of the first transmission pipelines 103; the carrier gas pipeline group is communicated to the carrier gas accommodating cavity and is a set of carrier gas transmission pipelines 105; the second pipe group is connected to the second accommodation chamber and is a collection of second transmission pipes 107.
The first accommodating cavity 110 comprises a first air inlet 111 arranged at the top and a first air outlet area 102 arranged at the bottom, the first air outlet area 102 is provided with a plurality of openings, and each opening is connected with a first transmission pipeline 103;
the carrier gas accommodating cavity 120 comprises a carrier gas outlet area 104 arranged at the bottom, the carrier gas outlet area 104 is provided with a plurality of openings, and each opening is connected with a carrier gas transmission pipeline 105;
the second accommodating chamber 130 includes a second air outlet area 106 disposed at the bottom, and a plurality of openings are disposed on the second air outlet area 106, and each opening is connected to a second transmission pipeline 107.
It can be understood that, in the present invention, the first accommodating chamber 110, the carrier gas accommodating chamber 120 and the second accommodating chamber 130 are independent of each other and are used for accommodating different gases, and the first accommodating chamber 110, the carrier gas accommodating chamber 120 and the second accommodating chamber 130 are respectively communicated with an independent gas inlet pipeline and an independent transmission pipeline, so as to avoid the pre-reaction of the source gases.
In one embodiment of the present invention, the first transport conduit 103, the carrier gas transport conduit 105, and the second transport conduit 107 are nested in sequence.
The carrier gas containing cavity and the second containing cavity in this embodiment further include a carrier gas inlet 112 and a second inlet 113, respectively, and the carrier gas inlet 112 and the second inlet 113 are annular openings formed on the sidewall.
In an embodiment of the present invention, the gas inlet of the first accommodating chamber 110 is disposed at the top of the first accommodating chamber 110, so as to facilitate diffusion of the precursor gas which is difficult to diffuse, and at the same time, the flow guide plate 101 is disposed in the first accommodating chamber 110, and has a plurality of small holes; the baffle 101 is disposed below the first inlet 111, and the aperture of the small hole at the edge of the baffle is larger than that of the small hole at the center, so that the diffusion of the precursor gas which is difficult to diffuse is further facilitated, for example, when in actual operation, the source gas of group two or group three can be introduced into the first receiving chamber 110.
As shown in fig. 2, in an alternative embodiment, the carrier gas inlet 112 and the second inlet 113 are respectively disposed at the sides of the carrier gas accommodating chamber 120 and the second accommodating chamber 130. In other embodiments, the carrier gas inlet 112 and the second inlet 113 may also be disposed on the top surfaces of the carrier gas accommodating cavity 120 and the second accommodating cavity 130, specifically, the carrier gas inlet 112 may pass through the first accommodating cavity 110 and then communicate with the carrier gas accommodating cavity 120, and the second inlet 113 may pass through the first accommodating cavity 110 and the carrier gas accommodating cavity 120 and then communicate with the second accommodating cavity 130.
Preferably, in the utility model discloses in, set up first air inlet 111 at the first top surface that holds chamber 110, can let in difficult diffusion's third family or second family gas, and first air inlet 111 also is greater than carrier gas air inlet 112 and second air inlet 113, and the width of first air inlet 111 is about the first 1/5 to 1/2 who holds the chamber width, the utility model provides a third family source air inlet is great, gives for prior art and more does benefit to the diffusion, and the top design of first air inlet 111 does not do benefit to the diffusion of first gas on the basis that does not increase the whole volume of gas transmission chamber. The carrier gas inlet 112 and the second inlet 113 are respectively arranged on the side surfaces of the carrier gas containing cavity 120 and the second containing cavity 130, the annular carrier gas inlet channel and the second gas inlet channel are added in the gas transmission cavity, the carrier gas inlet channel and the second gas inlet channel are respectively communicated to the carrier gas containing cavity 120 and the second containing cavity 130 through the carrier gas inlet 112 and the second inlet 113, on the basis of considering the easy diffusion of the carrier gas and the second gas, the space in the containing cavity is not occupied, the pipeline in the containing cavity is smooth in trend, the annular inlet channel is designed, and the uniformity of gas inlet is facilitated.
The outer sides of the first gas inlet 111, the carrier gas inlet 112 and the second gas inlet 113 are all provided with a pipeline communicated to the upper part of the gas transmission chamber 1, the gas inlet pipelines are in a concentric circle shape, and three gases flow in from different pipeline ports on the same plane above the gas transmission chamber 1. In an alternative embodiment, as shown in FIG. 3, the gas inlet conduits are streamlined, which facilitates diffusion of the source gases in the respective chambers, providing better gas source distribution.
As shown in fig. 4, the pipe assemblies 2 of the present embodiment are distributed in the same distribution manner when connecting the gas transmission chamber 1 and the deposition chamber 3, so that the gas source distribution, the reaction concentration and the uniformity of the growth wafer can be better, and the distribution manner includes: square column distribution, surrounding lamination distribution.
The number of inlets of the pipe assembly located at the bottom of the gas delivery chamber should be less than or equal to the number of outlets located on the gas exit face of the deposition chamber. Wherein, the optimal scheme is that the number of the pipeline assembly ports is equal.
The connection mode of the pipeline assembly is schematically shown in fig. 1, when the gas transmission chamber 1 and the deposition chamber 3 are connected, the connection mode of the pipeline assembly 2 follows the principle of near connection, the arrangement can enable the pipeline distribution to be regular and orderly, the length of the connecting pipeline can be greatly reduced, and the waste of materials is avoided.
As a shower head serving as a core of single crystal growth equipment, quartz is generally adopted for processing, and the processing technology redundancy of the quartz is lower than that of conventional metals, so the processing difficulty of the shower head needs to be considered when the shower head is designed. In this embodiment, the pipe diameter R of the first transfer pipe 103 1 The pipe diameter R of the carrier gas transmission pipeline 105 2 And the pipe diameter R of the second transfer pipe 107 3 Can be adjusted through requirements to satisfy R 1 <R 2 <R 3 Then the method is finished; the arrangement ensures the redundancy of the quartz tube processing technology. In an alternative embodiment, the first transfer line 103, carrier gas transfer line 105, and second transfer line 107 have a wall thickness of 2mm. The pipe diameter of the first transmission pipeline 103 is 5-8mm, and the pipe diameters of the carrier gas transmission pipeline 105 and the second transmission pipeline 107 are sequentially increased by 3-4mm. The height of the pedestal 302 is 30-50mm, and the height setting can enable the III-family source gas, the V-family source gas and the carrier gas to be uniformly mixed, so that the growth uniformity of wafers between disks and wafers is ensured, and the quality of the grown wafers is improved.
In an alternative embodiment, the transport duct is connected to the outlet face 301, or the transport duct is integrally formed with the outlet face 301, and the outlet face 301 or a part of the outlet face 301 is arranged obliquely with respect to the tray.
In another alternative embodiment, the deposition chamber further comprises a top, the top and the gas exit face 301 enclose a gas entry chamber, the transport duct is connected to the top and/or the gas exit face 301, or the transport duct is integrally formed with the top and/or the gas exit face 301, and the gas exit face 301 or a part of the gas exit face 301 is arranged obliquely with respect to the tray.
In an alternative embodiment, the angle of inclination of the air outlet surface 301 with respect to the obliquely-disposed portion of the tray is in a range of 30 degrees to 60 degrees, and preferably, the angle of inclination of the air outlet surface 301 with respect to the obliquely-disposed portion of the tray is 45 degrees. It should be noted that the specific value of the inclination angle of the gas outlet surface 301 relative to the inclined portion of the tray is only used as an example of the specific value of the inclination angle of the gas outlet surface 301 relative to the inclined portion of the tray in the embodiment of the present application, and during actual production, the specific value of the inclination angle of the gas outlet surface 301 relative to the inclined portion of the tray is not specifically limited in the embodiment of the present application, and the specific value can be optimally adjusted according to the effect of opposite gas and adjacent gas hedging mixing.
The bottom of the chamber surrounded by the gas outlet surface 301 of the deposition chamber 3 of this embodiment is square or circular, and becomes smaller from bottom to top. Specifically, in one embodiment, the gas outlet surface 301 includes four sidewalls, two of the four sidewalls are disposed opposite to each other, the shape of the four sidewalls is similar to the shape of the rectangular frustum of a pyramid, and the gas flowing from the transmission pipeline disposed on the gas outlet surface is merged with each other before reaching the surface of the tray. In this embodiment, the base is provided as a cube or cylinder with a cylindrical cavity.
In another embodiment, as shown in fig. 5, the gas outlet surface 301 comprises a curved sidewall having a shape similar to that of the circular truncated cone sidewall, and the gases flowing from the transport pipe disposed on the gas outlet surface 301 merge with each other before reaching the surface of the tray. In this embodiment, the base is provided as a cube or cylinder with a cylindrical cavity.
It should be noted that the shape of the gas outlet surface 301 is only an example of the shape of the gas outlet surface 301 in the embodiment of the present application, and actually, the shape of the gas outlet surface 301 is set to be inclined with respect to the deposition direction of the achievable gas, and the shape of the gas outlet surface 301 is not specifically limited in the embodiment of the present application.
In the embodiment, different source gases are respectively guided to respective chambers through respective gas inlets, and then enter respective source gas pipelines to be directly communicated to the gas outlet surface 301 of the deposition chamber 3 to flow out, and the carrier gas transmission pipeline 105 is located in the middle of a concentric circle formed by the first transmission pipeline 103, the carrier gas transmission pipeline 105 and the second transmission pipeline 107, the first source gas and the second source gas flow out from two sides of the carrier gas, at the gas outlet surface 301, the carrier gas can effectively isolate the three-group source gas and the five-group source gas, thereby avoiding the pre-reaction of the organic source, and avoiding the parasitic deposition at the hole opening of the gas outlet surface 301.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. Equivalent substitution or transformation made by the technical personnel in the technical field on the basis of the utility model is within the protection scope of the utility model. The protection scope of the present invention is subject to the claims.
Claims (10)
1. A MOCVD crystal growth device is characterized in that: the method comprises the following steps: a conduit assembly, a gas delivery chamber, and a deposition chamber;
the pipeline assembly comprises a plurality of pipeline groups, and each pipeline group comprises a plurality of transmission pipelines respectively;
the gas transmission chamber comprises a plurality of accommodating cavities, and each accommodating cavity is respectively and independently communicated with the corresponding pipeline group;
the deposition chamber comprises a gas outlet surface and a base;
the air outlet surface is provided with a plurality of openings, and each opening is correspondingly connected with one transmission pipeline;
the base is connected with the air outlet surface, and a tray for accommodating a substrate to be deposited or an epitaxial wafer can be arranged in the base;
wherein, the air outlet surface is at least partially arranged obliquely relative to the tray.
2. The MOCVD growth equipment of claim 1, wherein: the plurality of accommodating cavities comprise a first accommodating cavity, a carrier gas accommodating cavity and a second accommodating cavity; the plurality of pipeline groups comprise a first pipeline group consisting of a plurality of first transmission pipelines, a carrier gas pipeline group consisting of a plurality of carrier gas transmission pipelines and a second pipeline group consisting of second transmission pipelines;
the first accommodating cavity comprises a first air inlet arranged at the top and a first air outlet area arranged at the bottom, a plurality of openings are formed in the first air outlet area, and each opening is connected with one first transmission pipeline;
the carrier gas accommodating cavity comprises a carrier gas outlet area arranged at the bottom, a plurality of openings are formed in the carrier gas outlet area, and each opening is connected with one carrier gas conveying pipeline;
the second accommodating cavity comprises a second gas outlet area arranged at the bottom, a plurality of openings are formed in the second gas outlet area, and each opening is connected with one second transmission pipeline.
3. The MOCVD growth equipment of claim 2, wherein: the first chamber that holds still includes one set up in the first guide plate that holds the intracavity portion, be provided with a plurality of apertures on the guide plate, and the aperture of guide plate edge aperture is greater than the aperture of center department aperture.
4. The MOCVD growth equipment of claim 2, wherein: the diameter of the first conveying pipeline is smaller than that of the carrier gas conveying pipeline; the diameter of the carrier gas conveying pipeline is smaller than that of the second conveying pipeline.
5. The MOCVD growth equipment of claim 2, wherein: the carrier gas containing cavity and the second containing cavity respectively comprise a carrier gas inlet and a second gas inlet, and the carrier gas inlet and the second gas inlet are annular openings formed in the side wall.
6. The MOCVD growth equipment of claim 5, wherein: the first air inlet, the carrier gas inlet and the second air inlet are respectively connected with an air inlet pipeline which is streamlined.
7. The MOCVD growth equipment of claim 1, wherein: the conduit assemblies are distributed in the same manner on the gas delivery chamber and the deposition chamber, the distribution comprising: square column distribution, surrounding lamination distribution.
8. The MOCVD crystal growth equipment according to claim 1, wherein: the conduit assembly connects following a proximity principle when connecting the gas delivery chamber and the deposition chamber.
9. The MOCVD growth equipment of claim 1, wherein: the air outlet surface is inclined at an angle of 30 to 60 degrees with respect to the obliquely arranged portion of the tray; and/or the gases ejected from the gas outlet surface are merged with each other during the deposition process.
10. The MOCVD growth equipment of claim 1, wherein: the bottom of the cavity surrounded by the gas outlet surface is square or round and becomes smaller from bottom to top in sequence.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222755435 | 2022-10-19 | ||
| CN202222755435X | 2022-10-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218842322U true CN218842322U (en) | 2023-04-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223248851.7U Active CN218842322U (en) | 2022-10-19 | 2022-12-05 | MOCVD crystal growth equipment |
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| Country | Link |
|---|---|
| CN (1) | CN218842322U (en) |
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2022
- 2022-12-05 CN CN202223248851.7U patent/CN218842322U/en active Active
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