CN111058091A - T-shaped epitaxial furnace structure - Google Patents
T-shaped epitaxial furnace structure Download PDFInfo
- Publication number
- CN111058091A CN111058091A CN201911400028.3A CN201911400028A CN111058091A CN 111058091 A CN111058091 A CN 111058091A CN 201911400028 A CN201911400028 A CN 201911400028A CN 111058091 A CN111058091 A CN 111058091A
- Authority
- CN
- China
- Prior art keywords
- air
- air inlet
- reaction furnace
- cavity
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention aims to provide a T-shaped epitaxial furnace structure which has good reaction effect and high product consistency and can effectively prevent the phenomenon of uneven doping concentration. The reactor comprises a reaction furnace, a cavity arranged in the reaction furnace, a rotary table arranged in the cavity, a plurality of air inlets arranged at the middle position of the top of the reaction furnace and a plurality of air outlets arranged at the bottom of the reaction furnace, wherein the air inlets are uniformly distributed and communicated with the cavity, one air inlet corresponds to a reaction gas, a plurality of air inlets are provided with regulating valves, one end of each air inlet close to the air inlet is provided with a first RF coil heater, the rotary table is provided with a second RF coil heater, a plurality of air outlets are in a symmetrical structure along the rotary table, one end of each air outlet is communicated with the cavity, and the other end of each air outlet is communicated with an air extraction pump. The invention is applied to the technical field of reaction furnace structures.
Description
Technical Field
The invention relates to the technical field of reaction furnace structures, in particular to a T-shaped epitaxial furnace structure.
Background
The silicon carbide semiconductor has the excellent characteristics of large forbidden band width, excellent stability, high thermal conductivity, high critical breakdown field strength, high saturated electron drift velocity and the like, and is an ideal semiconductor material for manufacturing high-temperature, high-frequency, high-power and strong-radiation power electronic devices. Compared with the traditional silicon device, the silicon carbide device can normally work under the electric field strength which is 10 times that of the silicon device. Silicon carbide materials used to make silicon carbide devices are typically epitaxial wafers of silicon carbide grown on a silicon carbide substrate.
In the horizontal flow type epitaxial furnace, the depletion curve of the reaction gas is similar to an exponential function curve, so that the phenomenon of uneven doping concentration after the epitaxial growth of the wafer is inevitable under the condition of a single gas inlet. Also, in order to make the doping concentration as uniform as possible, the wafer growth region is selected to be located in the latter region of the depletion curve, which also results in a large waste of reaction gas.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides the T-shaped epitaxial furnace structure which has good reaction effect and high product consistency and can effectively prevent the phenomenon of uneven doping concentration.
The technical scheme adopted by the invention is as follows: the reactor comprises a reaction furnace, a cavity arranged in the reaction furnace, a rotary table arranged in the cavity, a plurality of air inlets arranged at the middle position of the top of the reaction furnace and a plurality of air outlets arranged at the bottom of the reaction furnace, wherein the air inlets are uniformly distributed and communicated with the cavity, one air inlet corresponds to a reaction gas, a plurality of air inlets are provided with regulating valves, one end of each air inlet close to the air inlet is provided with a first RF coil heater, the rotary table is provided with a second RF coil heater, a plurality of air outlets are in a symmetrical structure along the rotary table, one end of each air outlet is communicated with the cavity, and the other end of each air outlet is communicated with an air extraction pump.
According to the scheme, the crystal products are prevented from entering the cavity through the air inlets which respectively correspond to different reaction gases on the rotary table, the reaction gases entering the cavity are heated by the first RF coil heater, so that the preheated reaction gases and the crystal products heated in the rotary table are in contact with each other and generate target products, the concentrations of the different reaction gases can be independently controlled through the corresponding regulating valves, the phenomenon of uneven doping concentration is prevented, and the consistency of the crystal products is effectively guaranteed.
The upper part of the reaction furnace is provided with two detection windows close to the air inlet, the two detection windows are symmetrical along the air inlet, and a plurality of sensors are arranged in the detection windows.
According to the scheme, the processing conditions of the crystal products in the rotary table can be observed in real time through the arrangement of the detection windows, so that the quality of the crystal products can be guaranteed, and the sensors correspond to sensors of different types and comprise temperature sensors, infrared sensors and gas concentration sensors, so that the conditions of the reaction furnace and the wafer products can be monitored in real time.
According to a preferable scheme, a plurality of air floatation gas pipelines for providing power for the rotation of the rotary disc are arranged below the rotary disc.
According to the scheme, the air floatation gas pipeline is arranged to provide power for the rotation of the rotary table, and the rotating speed of the rotary table is controlled by changing the gas flow in the air floatation gas pipeline.
The air inlet holes are of an infinite approaching structure, the number of the air inlet holes is five, and the air inlet holes are of a square barrel structure.
According to the scheme, the five gas inlet holes correspond to the five reaction gases, and the gas inlet holes are in an infinite approaching structure, so that the flow of the reaction gases can reach the maximum value.
The rotary table is made of graphite, and graphite layers are respectively arranged between the reaction furnace and the air inlet hole, between the reaction furnace and the cavity and between the reaction furnace and the air outlet hole.
According to the scheme, the graphite material is beneficial to the growth of crystal products.
Preferably, the detection windows are arranged along the radial direction of the rotating disc.
According to the scheme, the detection windows are radially arranged along the turntable, so that the condition of the crystal product can be observed conveniently, and the quality of the crystal product can be ensured conveniently.
The invention has the following beneficial effects:
1. the purpose of uniform doping is achieved by independently controlling the flow and the component proportion of the reaction gas of the five branch gas inlets;
2. the reaction gas is preheated, so that uniform temperature distribution in the furnace can be obtained;
3. the conditions of the reaction furnace and the crystal product can be observed in real time, and the product quality is high.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a bottom view of the present invention;
fig. 4 is a right side view of the present invention.
In the figure, 1-a reaction furnace, 2-a cavity, 3-a rotating disc, 4-an air inlet, 5-an air outlet and 6-a detection window.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
As shown in fig. 1 to 4, in this embodiment, the present invention includes a reaction furnace 1, a cavity 2 disposed inside the reaction furnace 1, a rotating plate 3 disposed inside the cavity 2, a plurality of air inlets 4 disposed at the middle position of the top of the reaction furnace 1, and a plurality of air outlets 5 disposed at the bottom of the reaction furnace 1, wherein the air inlets 4 are uniformly arranged and communicated with the cavity 2, one air inlet 4 corresponds to a reaction gas and a plurality of air inlets 4 are provided with regulating valves, one end of the air inlet 4 close to the air inlet is provided with a first RF coil heater, the rotating plate 3 is provided with a second RF coil heater, a plurality of air outlets 5 are symmetrically structured along the rotating plate 3, one end of the air outlet 5 is communicated with the cavity 2, and the other end of the air outlet 5 is communicated with an air pump, the reaction gas entering the gas inlet 4 is preheated through the first RF coil heater, a groove for placing a crystal product is formed in the turntable 3, and the crystal product is heated through the second RF coil heater; each air inlet 4 is provided with the regulating valve, so that the concentration of reaction gas can be conveniently controlled; different kinds of reaction gases enter the cavity 2 from the corresponding gas inlet holes 4, the preheated reaction gases are contacted with the crystal product, and the generated waste gas is extracted from the gas outlet hole 5 at the bottom of the reaction furnace 1 through the air extracting pump.
Further, as shown in fig. 1 and 2, two detection windows 6 are arranged on the upper portion of the reaction furnace 1 near the air inlet, the two detection windows 6 are symmetrical along the air inlet 4, and a plurality of sensors are arranged in the detection windows 6.
Furthermore, a plurality of air-floatation gas pipelines for providing power for the rotation of the rotary disc 3 are arranged below the rotary disc 3.
Further, as shown in fig. 1 and fig. 2, an infinite approaching structure is formed between two adjacent air inlet holes 4, the number of the air inlet holes 4 is five, and the air inlet holes 4 are in a square tube structure.
Further, the turntable 3 is made of graphite, and graphite layers are respectively arranged between the reaction furnace 1 and the air inlet 4, between the reaction furnace 1 and the cavity 2, and between the reaction furnace 1 and the air outlet 5.
Further, as shown in fig. 2, the detection windows 6 are arranged along the radial direction of the rotating disk 3.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and the scope of protection is still within the scope of the invention.
Claims (6)
1. A T type epitaxial furnace structure which characterized in that: it comprises a reaction furnace (1), a cavity (2) arranged in the reaction furnace (1), a turntable (3) arranged in the cavity (2), a plurality of air inlets (4) arranged at the middle position of the top of the reaction furnace (1) and a plurality of air outlets (5) arranged at the bottom of the reaction furnace (1), the air inlets (4) are uniformly distributed and communicated with the cavity (2), one air inlet (4) corresponds to a reaction gas, a plurality of air inlets (4) are provided with regulating valves, one end of the air inlet hole (4) close to the air inlet is provided with a first RF coil heater, the turntable (3) is provided with a second RF coil heater, a plurality of air outlet holes (5) are in a symmetrical structure along the turntable (3), one end of the air outlet hole (5) is communicated with the cavity (2), and the other end of the air outlet hole (5) is communicated with the air suction pump.
2. A T-epitaxial furnace structure according to claim 1, characterized in that: two detection windows (6) are arranged on the upper portion of the reaction furnace (1) and close to the air inlet, the two detection windows (6) are symmetrical mechanisms along the air inlet (4), and a plurality of sensors are arranged in the detection windows (6).
3. A T-epitaxial furnace structure according to claim 1, characterized in that: a plurality of air-float gas pipelines which provide power for the rotation of the rotary disc (3) are arranged below the rotary disc (3).
4. A T-epitaxial furnace structure according to claim 1, characterized in that: the air inlet holes (4) are in an infinite approaching structure, the number of the air inlet holes (4) is five, and the air inlet holes (4) are in a square barrel structure.
5. A T-epitaxial furnace structure according to claim 1, characterized in that: the rotary table (3) is made of graphite materials, and graphite layers are respectively arranged between the reaction furnace (1) and the air inlet holes (4), between the reaction furnace (1) and the cavity (2) and between the reaction furnace (1) and the air outlet holes (5).
6. A T-epitaxial furnace structure according to claim 1, characterized in that: the detection windows (6) are arranged along the radial direction of the rotary table (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911400028.3A CN111058091A (en) | 2019-12-30 | 2019-12-30 | T-shaped epitaxial furnace structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911400028.3A CN111058091A (en) | 2019-12-30 | 2019-12-30 | T-shaped epitaxial furnace structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111058091A true CN111058091A (en) | 2020-04-24 |
Family
ID=70305032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911400028.3A Pending CN111058091A (en) | 2019-12-30 | 2019-12-30 | T-shaped epitaxial furnace structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111058091A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201284372Y (en) * | 2008-09-12 | 2009-08-05 | 甘志银 | Reaction cavity of multi-airflow metallorganic chemical vapor deposition apparatus |
| CN205635850U (en) * | 2016-05-06 | 2016-10-12 | 瀚天天成电子科技（厦门）有限公司 | Formula epitaxial furnace preheats |
| JP2017103396A (en) * | 2015-12-03 | 2017-06-08 | 信越半導体株式会社 | Vapor growth device and manufacturing method of epitaxial wafer |
| CN107326433A (en) * | 2016-04-29 | 2017-11-07 | 上海新昇半导体科技有限公司 | epitaxial device |
| CN109576784A (en) * | 2017-09-29 | 2019-04-05 | 上海新昇半导体科技有限公司 | A kind of preparation method and device of SiC epitaxial layer |
-
2019
- 2019-12-30 CN CN201911400028.3A patent/CN111058091A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201284372Y (en) * | 2008-09-12 | 2009-08-05 | 甘志银 | Reaction cavity of multi-airflow metallorganic chemical vapor deposition apparatus |
| JP2017103396A (en) * | 2015-12-03 | 2017-06-08 | 信越半導体株式会社 | Vapor growth device and manufacturing method of epitaxial wafer |
| CN107326433A (en) * | 2016-04-29 | 2017-11-07 | 上海新昇半导体科技有限公司 | epitaxial device |
| CN205635850U (en) * | 2016-05-06 | 2016-10-12 | 瀚天天成电子科技（厦门）有限公司 | Formula epitaxial furnace preheats |
| CN109576784A (en) * | 2017-09-29 | 2019-04-05 | 上海新昇半导体科技有限公司 | A kind of preparation method and device of SiC epitaxial layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10971389B2 (en) | Multi-zone pedestal for plasma processing | |
| CN101589175B (en) | Processing chamber with heated chamber liner | |
| US10386126B2 (en) | Apparatus for controlling temperature uniformity of a substrate | |
| KR102370610B1 (en) | Substrate support with more uniform edge purge | |
| US20110180233A1 (en) | Apparatus for controlling temperature uniformity of a showerhead | |
| CN105870039B (en) | Dual zone heater for plasma processing | |
| US10910238B2 (en) | Heater pedestal assembly for wide range temperature control | |
| WO2014052301A1 (en) | Controlling temperature in substrate processing systems | |
| KR20110033925A (en) | Pedestal heater for low temperature pecvd application | |
| US11769684B2 (en) | Wafer heater with backside and integrated bevel purge | |
| CN108352353A (en) | The reeded tablet pedestal of tool for minimizing the Temperature Distribution for crossing over substrate | |
| TW201624607A (en) | Substrate support with multiple heating zones | |
| TWM531055U (en) | Wafer carrier with a thirty-five pocket configuration | |
| CN107516625A (en) | A kind of spray head of plasma etching system | |
| KR102343265B1 (en) | Self-centering pedestal heater | |
| US10138551B2 (en) | Substrate processing apparatuses and systems | |
| KR102634223B1 (en) | Liner for epi chamber | |
| KR20220078678A (en) | Pedestal heater for spatial multi-wafer processing tools | |
| KR20180129970A (en) | Apparatus for preventing backside deposition in a spatial ALD process chamber | |
| CN111058091A (en) | T-shaped epitaxial furnace structure | |
| KR20220166862A (en) | Thermal Control Reed Stack Components | |
| US10276354B2 (en) | Segmented focus ring assembly | |
| CN205635851U (en) | Zone heating formula epitaxial furnace | |
| CN101419929A (en) | Electrostatic chuck | |
| US20200203206A1 (en) | Electrostatic chuck |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200424 |