CN104178747A - Split type gas spraying component and metal organic chemical vapor deposition device - Google Patents
Split type gas spraying component and metal organic chemical vapor deposition device Download PDFInfo
- Publication number
- CN104178747A CN104178747A CN201310198956.2A CN201310198956A CN104178747A CN 104178747 A CN104178747 A CN 104178747A CN 201310198956 A CN201310198956 A CN 201310198956A CN 104178747 A CN104178747 A CN 104178747A
- Authority
- CN
- China
- Prior art keywords
- gas distribution
- type
- gas
- plate member
- metal organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a split type gas spraying component and a metal organic chemical vapor deposition device. The gas spraying component comprises a first gas inlet pipeline, a second gas inlet pipeline, a gas distribution unit and a plurality of plate parts, wherein the gas distribution unit comprises an A type gas distribution cavity and a B type gas distribution cavity; the A type gas distribution cavity and the B type gas distribution cavity are arranged at intervals, and are respectively used for distributing a first gas and a second gas; an A type plate part and a B type plate part are mounted in the gas distribution unit, are respectively opposite to the A type gas distribution cavity and the B type gas distribution cavity, and are spliced with each other; and the gas distribution unit is spaced from a base. The gas spraying component, provided by the invention, is simple in structure; the gas distribution unit is easily processed; and the A type plate part and the B type plate part are only maintained in the use process, so that the disassembly or installation of the whole gas spraying component is reduced, the maintenance time of the metal organic chemical vapor deposition device is shortened, and the utilization rate is improved.
Description
Technical field
The present invention relates to semi-conductor Preparation equipment field, relate in particular to a kind of split type gas spray assembly and metal organic chemical vapor deposition device.
Background technology
Chemical vapour deposition (Chemical vapor deposition, be called for short CVD) be that reactive material issues biochemical reaction in gaseous state condition, generate the solid matrix surface that solid matter is deposited on heating, and then making the Technology of solid material, it is achieved by chemical vapor deposition unit.Particularly, CVD device passes into reactant gases in reaction chamber by diffuser, and controls the reaction conditions such as pressure, temperature of reaction chamber, reactant gases is reacted, thereby complete depositing operation step.Chemical vapour deposition comprises many types, as plasma gas phase deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), low-pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) and metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) etc., each CVD method is applicable to respectively the preparation of different types of film solid material.
MOCVD is mainly used in the preparation of the thin layer monocrystalline functional structure material of the III-V compound semiconductors such as gan, gallium arsenide, indium phosphide and alloy, along with the range of application of above-mentioned functions structured material constantly expands, MOCVD device has become one of important device of chemical vapor deposition unit.The general YiIII of MOCVD family's metal organic source and V family hydride source etc. are as reactant gases, with hydrogen or nitrogen as carrier gas, in pyrolysis mode, on substrate, carry out vapor phase epitaxial growth, thus the thin layer monocrystal material of grow various III-V compound semiconductors and their multivariate solid solution.MOCVD device of the prior art generally comprises:
Reaction chamber, is arranged at glove box and atmosphere-Te gas surge chamber outside described reaction chamber;
Be positioned at the gas spray assembly at described reaction chamber top, described gas spray assembly comprises two admission passages and gas distribution member, described two admission passages respectively JiangIII family metal organic source and V family hydride source transfer to gas distribution member, described gas distribution member has scavenge area, on described scavenge area, there is venting hole, for discharging described III family's metal organic source and V family hydride source;
Spray with described gas the pedestal that assembly is oppositely arranged, described pedestal has heating unit, described pedestal is for supporting and heated substrate, after described III family's metal organic source of being discharged by described gas spray assembly and V family hydride source arrive described substrate, react, generate III-V compound semiconductor.
Conventionally, in the outer setting of MOCVD reaction chamber, have glove box, the atmosphere in described glove box is high pure nitrogen.Described III family metal organic source in MOCVD reaction chamber easily contacts parasitic reaction occurs with V family hydride source in reaction chamber, and then, the lower position of temperature at reaction chamber inwall or gas spray assembly forms loose film, when described loose film acquires a certain degree, can produce a large amount of microparticles, and drop to film surface when deposited semiconductor device film, cause defect concentration in film to increase, affect film quality, the yield of product is reduced.In addition, described microparticle is adsorbed on that on the sidewall of described venting hole, this may reduce the speed of described venting hole Exhaust Gas.When described scavenge area is covered by described loose film portion, the heat-radiating properties of described scavenge area, as its thermal emissivity also can change, this can break the thermal equilibrium in described reaction chamber, cause the variation of described reaction cavity temperature, finally affect the stability of technological process.
Therefore the described scavenge area of described gas spray assembly must regularly clean, and in order to remove the described loose film that deposits because of parasitic reaction on it or the described microparticle of absorption, just can carry out normal technological reaction process.For gas spray assembly of the prior art, due to have at least a kind of venting hole of reactant gases be positioned at integrated of described gas distribution member on, be that described scavenge area has and the integrated structure of described gas distribution member, and this part can not be removed separately and is processed, therefore described gas spray assembly integral body from reaction chamber need to be taken out, and put into baking box and toast, or clean by other means.But because described gas spray assembly yardstick is large, and comprise a large amount of component, described gas spray assembly is carried out integral demounting and is again fixed on the operation that described reaction chamber top relates to very complicated, can waste a large amount of time and cost; And can make described reaction chamber for a long time in open state in the dismounting of described gas spray assembly and installation process, destroyed its inner highly purified nitrogen atmosphere, need to again pass into above-mentioned gas and could recover to carry out the required atmosphere of deposition reaction, this can make time that device systems need to be longer just can return to carry out the required state of technological reaction.
The gas of existing multiple gases distribution cavity spray assembly is multilayered structure in addition, be processed as multi-point welding, conventionally want thousands of welds, the disclosed gas spray assembly that comprises a plurality of structurizing dishes of Chinese patent that the application number of as bright in the Aix-en-Provence spy by German (Aixtron) company application is CN200880019034, or publication number is the disclosed gas spray of US20110186228 United States Patent (USP) assembly.Its processing is extremely complicated, expensive, and follow-up maintenance cost is high.
Therefore need a kind of simply, cheaply but can realize the gas spray assembly of multiple gases distribution cavity, described gas spray assembly has complete dismountable scavenge area, make to facilitate timely described scavenge area is dismantled and cleaned, reduce the maintenance cost of equipment.
Summary of the invention
The object of the present invention is to provide a kind of split type gas simple in structure, that be easy to processing to spray assembly and metal organic vapor phase deposition device.
Metal organic chemical vapor deposition device provided by the invention, comprise reaction chamber, be arranged at glove box and atmosphere-Te gas surge chamber outside described reaction chamber, be positioned at the gas spray assembly at described reaction chamber top and the pedestal being oppositely arranged with described gas spray assembly, described pedestal can rotate relative to described gas spray assembly, described gas spray assembly comprises the first admission passage, the second admission passage, gas distribution member and some plate member, described first, the second admission passage is respectively used to the first gas and the second gas transmission to described gas distribution member, described gas spray assembly has scavenge area, the single layer structure that described gas distribution member is formed in one, described gas distribution member comprises A type gas distribution chamber and Type B gas distribution chamber, described A type gas distribution chamber and Type B gas distribution chamber interval arrange, be respectively used to distribute described the first gas and the second gas, described plate member is installed in described gas distribution member, described plate member comprises A template parts and Type B plate member, described A template parts and described A type gas distribution chamber are oppositely arranged, described Type B plate member and described Type B gas distribution chamber are oppositely arranged, described A template parts and Type B plate member have venting hole, be respectively used to discharge described the first gas and the second gas, described A shape plate member and B shape plate member are spliced mutually, and described gas distribution member and described pedestal are separated.
The beneficial effect of metal organic chemical vapor deposition device provided by the invention is: the single layer structure that the described gas distribution member in described gas spray assembly is formed in one, there are not a large amount of multi-point welding component together that need, be easy to carry out processing and manufacturing and simple in structure.The described scavenge area of described gas spray assembly consists of the described A template parts and the B shape plate member that are installed in described gas distribution member, and described A type, Type B plate member have venting hole, is respectively used to discharge described first, second gas.Because described A template parts and Type B plate member all can remove from described gas distribution member, when the described loose film depositing on need to removing described scavenge area or the described microparticle of absorption, only need the whole little a lot of A type of assembly will be sprayed than gas, Type B plate member removes, by atmosphere-Te gas surge chamber, in nitrogen atmosphere, transmit out, put into baking box or clean with other method, and the A type that more transducer set is new, Type B plate member, it is simply installed in described gas distribution member, and will be not described gas spray assembly integral body from described reaction chamber, disassemble and process, saved the time that described metal organic vapor phase deposition device is shut down, also can not destroy the high-purity nitrogen atmosphere in the glove box of reaction chamber outside simultaneously.Therefore, gas spray unit construction provided by the present invention is simple, gas distribution member handling ease, and there is easy-to-dismount A type, Type B plate member, in use procedure, only need to safeguard described A type, Type B plate member, reduce dismounting or the installation of whole gas spray assembly, reduced the maintenance time of described metal organic vapor phase deposition device, improved utilization ratio.In addition, when in described reaction cavity, airflow field need to regulate, the described venting hole that only need to change in described A type, Type B plate member distributes, and does not need to change described gas spray assembly.
Preferably, described gas distribution member has the space bar perpendicular to the upper surface of described pedestal, in order to described A type gas distribution chamber and Type B gas distribution chamber are separated, on described space bar, be provided with groove, described A type, the Type B plate member two sides parallel with described space bar are provided with the buckle teeth portion with described groove fit, in order to described A type, Type B plate member to be installed.
Preferably, described space bar is provided with the first groove towards a side of described A type gas distribution chamber, described space bar is provided with the second groove towards a side of described Type B gas distribution chamber, described the first groove and the second groove are respectively used to install described A template parts and Type B plate member, and described the first groove and the second groove stagger mutually along the direction of the upper surface perpendicular to described pedestal.Described space bar can make its less thick due to the existence of described groove, reduce its physical strength, if described the first groove and the second groove are arranged at apart from described pedestal upper surface sustained height place, described space bar exists described groove will become thinner, in order to reduce the impact of described groove on space bar physical strength, require described the first groove and the second groove mutually to stagger in the direction of the upper surface along perpendicular to described pedestal.
Preferably, described A template parts two sides parallel with described space bar are also provided with groove, described Type B plate member two sides parallel with described space bar are provided with the buckle teeth portion with the described groove fit of described A template parts, in order to described Type B plate member is installed on two described A template parts that are adjacent.Its advantage is not need described space bar is lengthened to install two kinds of described plate member, only described A template parts need be installed on described space bar, and described Type B plate member can be fixed in described gas distribution member with the coordinating of groove on described A template parts by its buckle teeth portion, be jointly spliced into a complete scavenge area.
Preferably, described plate member has end being parallel on the cross section of described pedestal upper surface, described end is near the edge of described gas distribution member, described plate member has respectively pressing portion and matching part in the both sides of described end, the described matching part that described pressing portion is adjacent cooperatively interacts, in order to prevent that described plate member from, along the radially generation displacement of described gas distribution member, having at least one to be fixed in described gas distribution member with lock mode in described plate member.Described A type, gas in Type B gas distribution chamber can be to described A type during to described end rapid flow, Type B plate member has reactive force, the more important thing is, when described gas spray assembly be heated and refrigeration cycle process in, described A type, Type B plate member is subject to the compression that described gas distribution member body causes due to thermal distortion, cause described A type, Type B plate member has the trend of radially outward moving along described gas distribution member, by in described A type, the described end of Type B plate member arranges described pressing portion and matching part, can hinder described A type, Type B plate member produces actual displacement, can facilitate timely to described A type simultaneously, Type B plate member is dismantled or is installed.
Further preferred, the protuberance on the right side that described pressing portion is described end, described protuberance adjacent described plate member is to the right extended, described matching part is the notch part in the left side of described end, the adjacent described notch part on described protuberance and its right side cooperatively interacts, in order to prevent that described plate member is along the radially generation displacement of described gas distribution member.Described plate member has at least one with screwed lock, to fix in described gas distribution member.
Preferably, described gas distribution member is provided with nesting part near the Mian Qi edge of described pedestal, in order to described plate member is more firmly fixed in described gas distribution member.Further preferred, described nesting part is an annulus contacting with the described end of described plate member, the center that the center of circle of described annulus is described gas distribution member.
Preferably, described gas spray assembly also comprises the web plate parts that are arranged on its center, described A type, Type B plate member are connected with described web plate parts near the one end at described gas distribution member center, in order to described A type, Type B plate member to be more firmly installed.
Preferably, described gas distribution member has circular depressions away from the mask of pedestal, and described circular depressions is communicated with described the first admission passage, in order to transmit described the first gas to described A type gas distribution chamber.
Preferably, there is an annular channel at the center of described gas distribution member, and described annular channel is connected with described Type B gas distribution chamber, and is communicated with described the second admission passage, in order to transmit described the second gas to described Type B gas distribution chamber.
Preferably, the material of described gas distribution member and described A type, Type B plate member comprises one or more in following material: graphite, stainless steel, aluminium, aluminium nitride, silicon carbide, molybdenum, boron nitride, norbide, tungsten.
Preferably, described the first gas WeiIII family metal organic source, described the second gas is V family hydride source; Preferably, described the first gas is V family hydride source, described the second gas WeiIII family metal organic source.Preferably, described III family metal organic source comprises one or more in the gases such as Ga (CH3) 3, In (CH3) 3, Al (CH3) 3, Ga (C2H5) 3, Zn (C2H5) 2; Preferably, described V family hydride source comprises one or more in the gases such as NH3, PH3, AsH3.
The present invention also provides a kind of gas spray assembly, described gas spray assembly comprises the first admission passage, the second admission passage, gas distribution member and some plate member, described first, the second admission passage is respectively used to the first gas and the second gas transmission to described gas distribution member, described gas distribution member has scavenge area, the single layer structure that described gas distribution member is formed in one, described gas distribution member comprises A type gas distribution chamber and Type B gas distribution chamber, described A type gas distribution chamber and Type B gas distribution chamber interval arrange, be respectively used to distribute described the first gas and the second gas, described plate member is installed in described gas distribution member, described plate member comprises A template parts and Type B plate member, described A template parts and described A type gas distribution chamber are oppositely arranged, described Type B plate member and described Type B gas distribution chamber are oppositely arranged, described A template parts and Type B plate member have venting hole, be respectively used to discharge described the first gas and the second gas, described A shape plate member and B shape plate member are spliced mutually, and described gas distribution member and described pedestal are separated.
Preferably, the material of described gas distribution member and described A type, Type B plate member comprises one or more in following material: graphite, stainless steel, aluminium, aluminium nitride, silicon carbide, molybdenum, boron nitride, norbide, tungsten.
Accompanying drawing explanation
Fig. 1 is the structural representation of metal organic chemical vapor deposition device provided by the present invention;
Fig. 2 A is the structural representation of a kind of described gas spray assembly in the preferred embodiment of the invention;
Fig. 2 B is the structural representation of another kind of described gas spray assembly in the preferred embodiment of the invention;
Fig. 3 is that described gas distribution member is away from the structural representation in the cross section of pedestal;
Fig. 4 is in the preferred embodiment of the invention, and a kind of described gas distribution member is along the schematic cross-section of A-A ' line;
Fig. 5 is in the preferred embodiment of the invention, and another kind of described gas distribution member is along the schematic cross-section of A-A ' line;
Fig. 6 is in a kind of preferred embodiment of the present invention, the schematic diagram of two adjacent described plate member on the face of described gas distribution member near described pedestal.
Fig. 7 is in the preferred embodiment of the invention, the structural representation of gas spray assembly described in another.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here, implement, so the present invention has not been subject to the restriction of following public specific embodiment.
Fig. 1 is the structural representation of metal organic chemical vapor deposition device provided by the present invention.With reference to Fig. 1, described metal organic chemical vapor deposition device 10 comprises reaction chamber 11, is arranged at glove box 50 and atmosphere-Te gas surge chamber 40 outside described reaction chamber 11, and is arranged at gas spray assembly 12 and pedestal 13 in described reaction chamber 11; Described gas spray assembly 12 is fixedly installed on the top of reaction chamber 11, and described pedestal 13 is arranged at the bottom of described reaction chamber 11, and described pedestal has heating unit 131.Described gas spray assembly 12 is oppositely arranged with described pedestal 13.Between described gas spray assembly 12 and described pedestal 13, form reaction zone.Reactant gases is incorporated into described reaction zone from described gas spray assembly 12.
Described pedestal 13 comprises a substrate seating surface towards described gas spray assembly 12, and described substrate support face is used for supporting one or more pending substrates 14.In carrying out the process of chemical vapour deposition, pending substrate 14 is sent in reaction chamber 11 by atmosphere-Te gas surge chamber 40, and be arranged on described substrate support face, the substrate 14 of handling is transmitted out from reaction chamber 11 by described atmosphere-Te gas surge chamber 40; Described pedestal 13 is supported in a rotating shaft 132, and described rotating shaft 132 makes described pedestal 13 around the axis rotation of a vertical described substrate support face.Because described spray assembly 12 is fixed on reaction chamber 11, therefore, described pedestal 13 also rotates relative to described gas spray assembly 12 simultaneously.
Fig. 2 A is the structural representation of a kind of described gas spray assembly in the preferred embodiment of the invention.With reference to Fig. 2 A, described gas spray assembly 12 comprises the first admission passage 111, the second admission passage 112, is positioned at gas distribution member 122 and some plate member of described reaction chamber top board 110 belows, described the first admission passage 111 and the second admission passage 112 are carried the first gas and the second gas to described gas distribution member 122 respectively through reaction chamber top board 110, the single layer structure that described gas distribution member 122 is formed in one, described gas distribution member 122 comprises A type gas distribution chamber 210 and Type B gas distribution chamber 220, described A type gas distribution chamber 210 and Type B gas distribution chamber 220 intervals arrange, the cavity that the body that described A type gas distribution chamber 210 and Type B gas distribution chamber 220 are described plate member and described gas distribution member 210 surrounds, be respectively used to distribute described the first gas and the second gas.
In described gas distribution member 122, described plate member is installed, described plate member comprises A template parts 123 and Type B plate member 124, described A template parts 123 are oppositely arranged with described A type gas distribution chamber 210, described Type B plate member 124 is oppositely arranged with described Type B gas distribution chamber 220, described A template parts 123 and Type B plate member 124 have venting hole (not shown), be respectively used to discharge described the first gas and the second gas, described A shape plate member 123 and B shape plate member 124 are spliced mutually, and described gas distribution member and described pedestal are separated.
Single layer structure because the described gas distribution member 122 in described gas spray assembly 12 is formed in one, does not relate to complicated component and multi-point welding technique during processing and manufacturing.Because described A template parts 123 and Type B plate member 124 all can remove from described gas distribution member 122, when the described loose film depositing on need to removing described scavenge area 125 or the described microparticle of absorption, only need the whole little a lot of described A type of assembly 12 will be sprayed than gas, Type B plate member 123/124 removes, by atmosphere-Te gas surge chamber 40, in nitrogen atmosphere, transmit out, put into baking box or clean with other method, and will be not described gas spray assembly 12 integral body from described reaction chamber 11, disassemble and process, saved the time that described metal organic vapor phase deposition device 10 is shut down, also can not destroy the high-purity nitrogen atmosphere in the glove box 50 of reaction chamber outside simultaneously.Therefore, gas spray unit construction provided by the present invention is simple, gas distribution member handling ease, and there is easy-to-dismount A type, Type B plate member 123/124, in use procedure, only need to safeguard described A type, Type B plate member 123/124, reduce dismounting or the installation of whole gas spray assembly 12, reduced the maintenance time of described metal organic vapor phase deposition device, improved utilization ratio.In addition, when the airflow field in described reaction chamber 11 bodies need to regulate, the described venting hole that only need to change in described A type, Type B plate member 123/124 distributes, and does not need to change described gas spray assembly 12.
Fig. 3 is that described gas distribution member 122 is away from the structural representation in the cross section of pedestal 13.With reference to Fig. 2 A and Fig. 3, described gas distribution member 122 has circular depressions 211 away from the cross section of pedestal simultaneously, and described circular depressions 211 is communicated with described the first admission passage 111, in order to transmit described the first gas to described A type gas distribution chamber 210.Described the first gas is discharged by the venting hole on described A template parts 123.
There is an annular channel 221 at described gas distribution member 122 center, described annular channel 221 is communicated with described Type B gas distribution chamber 220, and be communicated with described the second admission passage 112, in order to transmit described the second gas to described Type B gas distribution chamber 220, described annular channel 221 has a dividing plate 212 with described A type gas distribution chamber 210 junctions, in order to isolated described the second gas, enter described A type gas distribution chamber 210, described the second gas is discharged by the venting hole in described Type B plate member 124.
Described gas distribution member 122 has the space bar perpendicular to the upper surface of described pedestal 13, in order to described A type gas distribution chamber 210 and Type B gas distribution chamber 220 are separated, on described space bar, be provided with groove, described A template parts 123 two sides parallel with described space bar with Type B plate member 124 are provided with the buckle teeth portion with described groove fit, in order to described A template parts 123 and Type B plate member 124 to be installed.
Fig. 4 is that in a kind of preferred embodiment of the present invention, gas distribution member 122 is along the schematic cross-section of A-A ' line.With reference to Fig. 4, described groove comprises the first groove 1261 and the second groove 1262, a side towards described A type gas distribution chamber 210 on described space bar 126 is provided with the first groove 1261, a side towards described Type B gas distribution chamber 220 on described space bar 126 is provided with the second groove 1262, described the first groove 1261 cooperatively interacts with the buckle teeth portion 1230 on A template parts 123, buckle teeth portion 1240 in described the second groove 1262 and B shape plate member 124 cooperatively interacts, and is respectively used to install described A template parts 123 and Type B plate member 124.On described A template parts 123, there is venting hole 1231, for discharging described the first gas, in described Type B plate member 124, there is venting hole 1241, for described the second gas.Described the first groove 1261 and the second groove 1262 stagger mutually along the direction of the upper surface perpendicular to described pedestal 13, and the height of the upper surface of the described pedestal 13 of distance is different.Its reason is, described space bar 126 can make its less thick owing to there is described groove 1261/1262, reduce its physical strength, if described the first groove 1261 and the second groove 1262 are arranged at the upper surface sustained height place apart from described pedestal 13, described space bar 126 exists described groove will become thinner, in order to reduce the impact of described groove 1261/1262 on space bar physical strength, require described the first groove 1261 and the second groove 1262 mutually to stagger in the direction of the upper surface along perpendicular to described pedestal.
Please refer to shown in Fig. 2 B, of the present invention some more preferred embodiment in, described gas spray assembly also comprises the web plate parts 2111 that are arranged on its center, described A template parts 123 are connected with described web plate parts 2111 near the one end at described gas distribution member 122 centers, particularly, described web plate parts have slot (not shown), for accommodating a part for described A template parts 123.Equally, described Type B plate member 124 is connected with described web plate parts 2111 one end near described gas distribution member 122 centers, and particularly, a part for described Type B plate member 124 is housed in described slot.Described web plate parts 2111 are in order to more firmly to install described A type, Type B plate member 123/124.
Fig. 5 is that in the another kind of preferred embodiment of the present invention, gas distribution member 122 is along the schematic cross-section of A-A ' line.With reference to Fig. 5, described A template parts 210 are installed in described gas distribution member 122 with the coordinating of described groove 1261 on described space bar 126 by its buckle teeth portion 1230.In addition, described A template 210 two sides parallel with described space bar 126 are also provided with groove 1232, described Type B plate member 124 two sides parallel with described space bar 126 are provided with the buckle teeth portion 1242 coordinating with the described groove 1232 of described A template parts, in order to described Type B plate member 124 is installed on two described A template parts 123 that are adjacent.Its beneficial functional is, do not need described space bar 126 to lengthen described plate member is installed, only described A template parts 123 need be installed on described space bar 126, and described Type B plate member 124 by described buckle teeth portion 1242 with can be fixed in described gas distribution member 122 coordinating of groove 1232 on described A template parts 123, be jointly spliced into a complete face 125.
Fig. 6 is in a kind of preferred embodiment of the present invention, the schematic diagram of two adjacent plate member on described scavenge area.With reference to Fig. 6, described plate member 140 and plate member 150, in consecutive position, have venting hole 1400/1500 in described plate member 140/150, for discharging described the first gas or the second gas.Described plate member 140/150 has end 141/151 on the cross section of upper surface that is parallel to described pedestal 13, described end 141/151 is near the edge of described gas distribution member 122, described plate member 140/150 has respectively pressing portion 142/152 and matching part 143/153 in the both sides of described end, the described matching part 153 of the plate member 150 that the described pressing portion 142 of plate member 140 is adjacent cooperatively interacts, in order to prevent that described plate member is along the radially generation displacement of described gas distribution member 122.In this preferred embodiment, described pressing portion 142/152 is the protuberance on the right side of described end 141/151, described protuberance extends to the adjacent described plate member on its right side, described matching part 142/152 is the notch part in the left side of described end 141/151, the adjacent described notch part on described protuberance and its right side cooperatively interacts, in order to prevent that described plate member 140/150 is along the radially generation displacement of described gas distribution member 122, described plate member 140 use lock modes are fixed in described gas distribution member, as shown in Figure 6, described lock mode is for locking with screw 144.
Described A type, gas in Type B gas distribution chamber is during to described end 141 rapid flow, can be to described A type, Type B plate member has reactive force, the more important thing is, when described gas spray assembly 12 be heated and refrigeration cycle process in, described plate member 140/150 is subject to the compression that described gas distribution member 12 bodies cause due to thermal distortion, cause described plate member 140/150 to have the trend of radially outward moving along described gas distribution member, by the described end 141/151 in described plate member 140/150,142/152 of described pressing and matching part 143/153 are set, can hinder described plate member 140/150 and produce actual displacement
In addition, the described plate member that fixes of the pressing portion cooperatively interact and matching part is set, only need to be by a described plate member 140 of screw 144 lockings, thereby can facilitate timely described plate member is dismantled or installed.When needs are dismantled described plate member and are done clean, only need will disassemble in advance by the described plate member 140 of screw 144 lockings, the direction that other plate member just can be extended along described pressing portion disassembles one by one in turn, by described atmosphere-Te gas surge chamber 40, transfers out described reaction chamber 11; When being installed, new a set of plate member can take same method transmit into described reaction chamber 11 and install in turn by described atmosphere-Te gas surge chamber 40, thereby simplified to a great extent dismounting and the installation procedure of described plate member, improved the utilization ratio of described metal organic vapor phase deposition device.
Described gas distribution member is provided with nesting part near the Mian Qi edge of described pedestal, in order to described A template parts 123 and Type B plate member 124 are more firmly fixed in described gas distribution member.Described nesting part is an annulus contacting with the described end of described plate member, the center that the center of circle of described annulus is described gas distribution member.
Fig. 7 is in the preferred embodiment of the present invention, the structural representation of gas spray assembly described in another.With reference to Fig. 7, described nesting part 60 has two cross sections, left and right, the cross section contacting with the described end of described A template parts 123 and the described end of Type B plate member 124 respectively, described end at described A template parts 123, described nesting part 60 has upper and lower two separated external members, at the described end of described Type B plate member 124, described nesting part 60 is continuous one, in order to described A template parts 123 and Type B plate member 124 are more firmly fixed in described gas distribution member.
In the preferred embodiment of the invention, the material of described gas distribution member and described A type, Type B plate member comprises one or more in following material: graphite, stainless steel, aluminium, aluminium nitride, silicon carbide, molybdenum, boron nitride and tungsten.
In the preferred embodiment of the invention, described the first gas is for comprising III family metal organic source, and described the second gas is one or more in V family hydride source and carrier gas; In other preferred embodiments of the present invention, described the first gas is V family hydride source, and described the second gas is for comprising III family metal organic source.
Described III family metal organic source comprises one or more in Ga (CH3) 3, In (CH3) 3, Al (CH3) 3, Ga (C2H5) 3, Zn (C2H5) 2 gases; Described V family hydride source comprises one or more in NH3, PH3, AsH3 gas; Described carrier gas comprises one or more in N2, H2, Ar gas.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with claim limited range.
Claims (18)
1. a metal organic chemical vapor deposition device, comprise reaction chamber, be arranged at glove box and atmosphere-Te gas surge chamber outside described reaction chamber, be positioned at the gas spray assembly at described reaction chamber top and the pedestal being oppositely arranged with described gas spray assembly, described pedestal can rotate relative to described gas spray assembly, described gas spray assembly comprises the first admission passage, the second admission passage, gas distribution member and some plate member, described first, the second admission passage is respectively used to the first gas and the second gas transmission to described gas distribution member, described gas distribution member has scavenge area, it is characterized in that, the single layer structure that described gas distribution member is formed in one, described gas distribution member comprises A type gas distribution chamber and Type B gas distribution chamber, described A type gas distribution chamber and Type B gas distribution chamber interval arrange, be respectively used to distribute described the first gas and the second gas, described gas distribution member bottom is provided with described plate member, described plate member comprises A template parts and Type B plate member, described A template parts and described A type gas distribution chamber are oppositely arranged, described Type B plate member and described Type B gas distribution chamber are oppositely arranged, described A template parts and Type B plate member have venting hole, be respectively used to discharge described the first gas and the second gas, described A shape plate member and B shape plate member are spliced mutually, and described gas distribution member and described pedestal are separated.
2. metal organic chemical vapor deposition device as claimed in claim 1, it is characterized in that, described gas distribution member has the space bar perpendicular to the upper surface of described pedestal, in order to described A type gas distribution chamber and Type B gas distribution chamber are separated, on described space bar, be provided with groove, described A type, the Type B plate member two sides parallel with described space bar are provided with the buckle teeth portion with described groove fit, in order to described A type, Type B plate member to be installed.
3. metal organic chemical vapor deposition device as claimed in claim 2, it is characterized in that, described space bar is provided with the first groove towards a side of described A type gas distribution chamber, described space bar is provided with the second groove towards a side of described Type B gas distribution chamber, described the first groove and the second groove are respectively used to install described A template parts and Type B plate member, and described the first groove and the second groove stagger mutually along the direction of the upper surface perpendicular to described pedestal.
4. metal organic chemical vapor deposition device as claimed in claim 2, it is characterized in that, described A template parts two sides parallel with described space bar are also provided with groove, described Type B plate member two sides parallel with described space bar are provided with the buckle teeth portion with the described groove fit of described A template parts, in order to described Type B plate member is installed on two described A template parts that are adjacent.
5. metal organic chemical vapor deposition device as claimed in claim 2, it is characterized in that, described plate member has end being parallel on the cross section of described pedestal upper surface, described end is near the edge of described gas distribution member, described plate member has respectively pressing portion and matching part in the both sides of described end, the described matching part that described pressing portion is adjacent cooperatively interacts, in order to prevent that described plate member from, along the radially generation displacement of described gas distribution member, having at least one to be fixed in described gas distribution member with lock mode in described plate member.
6. metal organic chemical vapor deposition device as claimed in claim 5, it is characterized in that, the protuberance on the right side that described pressing portion is described end, described protuberance adjacent described plate member is to the right extended, described matching part is the notch part in the left side of described end, the adjacent described notch part on described protuberance and its right side cooperatively interacts, in order to prevent that described plate member from, along the radially generation displacement of described gas distribution member, having at least one to fix in described gas distribution member with screwed lock in described plate member.
7. metal organic chemical vapor deposition device as claimed in claim 6, it is characterized in that, described gas distribution member is provided with nesting part near the Mian Qi edge of described pedestal, in order to described plate member is more firmly fixed on to described gas distribution member, exists.
8. metal organic chemical vapor deposition device as claimed in claim 7, is characterized in that, described nesting part is an annulus contacting with the described end of described plate member, the center that the center of circle of described annulus is described gas distribution member.
9. metal organic chemical vapor deposition device as claimed in claim 8, described gas spray assembly also comprises the web plate parts that are arranged on its center, described web plate parts are connected near the one end at described gas distribution member center with described A type, Type B plate member, in order to described A type, Type B plate member to be more firmly installed.
10. metal organic chemical vapor deposition device as claimed in claim 8, it is characterized in that, described gas distribution member has circular depressions away from the mask of pedestal, and described circular depressions is communicated with described the first admission passage, in order to transmit described the first gas to described A type gas distribution chamber.
11. metal organic chemical vapor deposition devices as claimed in claim 9, it is characterized in that, there is an annular channel at the center of described gas distribution member, described annular channel is communicated with described Type B gas distribution chamber, and be communicated with described the second admission passage, in order to transmit described the second gas to described Type B gas distribution chamber.
12. metal organic chemical vapor deposition devices as described in right 1, it is characterized in that, the material of described gas distribution member and described A type, Type B plate member comprises one or more in following material: graphite, stainless steel, aluminium, aluminium nitride, silicon carbide, molybdenum, boron nitride, norbide, tungsten.
13. metal organic chemical vapor deposition devices as claimed in claim 1, is characterized in that, described the first gas WeiIII family metal organic source, and described the second gas is V family hydride source.
14. metal organic chemical vapor deposition devices as claimed in claim 1, is characterized in that, described the first gas is V family hydride source, described the second gas WeiIII family metal organic source.
15. metal organic chemical vapor deposition devices as described in any one in claim 13 or 14, it is characterized in that, described III family metal organic source comprises one or more in Ga (CH3) 3, In (CH3) 3, Al (CH3) 3, Ga (C2H5) 3, Zn (C2H5) 2 gases.
16. metal organic chemical vapor deposition devices as described in any one in claim 13 or 14, is characterized in that, described V family hydride source comprises one or more in NH3, PH3, AsH3 gas.
17. 1 kinds of gas spray assemblies, described gas spray assembly comprises the first admission passage, the second admission passage, gas distribution member and some plate member, described first, the second admission passage is respectively used to the first gas and the second gas transmission to described gas distribution member, described gas distribution member has scavenge area, it is characterized in that, the single layer structure that described gas distribution member is formed in one, described gas distribution member comprises A type gas distribution chamber and Type B gas distribution chamber, described A type gas distribution chamber and Type B gas distribution chamber interval arrange, be respectively used to distribute described the first gas and the second gas, described plate member is installed in described gas distribution member, described plate member comprises A template parts and Type B plate member, described A template parts and described A type gas distribution chamber are oppositely arranged, described Type B plate member and described Type B gas distribution chamber are oppositely arranged, described A template parts and Type B plate member have venting hole, be respectively used to discharge described the first gas and the second gas, described A shape plate member and B shape plate member are spliced mutually, and described gas distribution member and described pedestal are separated.
18. gas as described in right 17 spray assemblies, it is characterized in that, the material of described gas distribution member and described A type, Type B plate member comprises one or more in following material: graphite, stainless steel, aluminium, aluminium nitride, silicon carbide, molybdenum, boron nitride, norbide, tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310198956.2A CN104178747B (en) | 2013-05-24 | 2013-05-24 | Split type gas shower assembly and metal organic chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310198956.2A CN104178747B (en) | 2013-05-24 | 2013-05-24 | Split type gas shower assembly and metal organic chemical vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104178747A true CN104178747A (en) | 2014-12-03 |
| CN104178747B CN104178747B (en) | 2016-08-24 |
Family
ID=51960084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310198956.2A Active CN104178747B (en) | 2013-05-24 | 2013-05-24 | Split type gas shower assembly and metal organic chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104178747B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624865A (en) * | 2017-03-15 | 2018-10-09 | 汉民科技股份有限公司 | Detachable air injection device applied to semiconductor equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101545103A (en) * | 2008-03-25 | 2009-09-30 | 东捷科技股份有限公司 | Device for distributing gas |
| CN101760728A (en) * | 2008-12-24 | 2010-06-30 | 鸿富锦精密工业（深圳）有限公司 | Chemical vapor deposition system |
| CN102373440A (en) * | 2010-08-12 | 2012-03-14 | Snt能源技术有限公司 | Chemical vapor deposition device |
| CN202688435U (en) * | 2012-05-11 | 2013-01-23 | 中微半导体设备(上海)有限公司 | Gas distributing device for metal organic chemical gas phase deposition reaction device and reaction device |
-
2013
- 2013-05-24 CN CN201310198956.2A patent/CN104178747B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101545103A (en) * | 2008-03-25 | 2009-09-30 | 东捷科技股份有限公司 | Device for distributing gas |
| CN101760728A (en) * | 2008-12-24 | 2010-06-30 | 鸿富锦精密工业（深圳）有限公司 | Chemical vapor deposition system |
| CN102373440A (en) * | 2010-08-12 | 2012-03-14 | Snt能源技术有限公司 | Chemical vapor deposition device |
| CN202688435U (en) * | 2012-05-11 | 2013-01-23 | 中微半导体设备(上海)有限公司 | Gas distributing device for metal organic chemical gas phase deposition reaction device and reaction device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624865A (en) * | 2017-03-15 | 2018-10-09 | 汉民科技股份有限公司 | Detachable air injection device applied to semiconductor equipment |
| CN108624865B (en) * | 2017-03-15 | 2020-06-23 | 汉民科技股份有限公司 | Detachable air injection device applied to semiconductor equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104178747B (en) | 2016-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5304247A (en) | Apparatus for depositing compound semiconductor crystal | |
| CN103140602B (en) | Exhaust for cvd reactor | |
| CN103502508B (en) | Use the wafer processing of loader expansion | |
| KR20160150613A (en) | Self-centering wafer carrier system for chemical vapor deposition | |
| US9388493B2 (en) | Self-cleaning shutter for CVD reactor | |
| CN106498368B (en) | A kind of spray head for MOCVD device | |
| CN104141116A (en) | Metal organic chemical vapor deposition device, gas spray component and gas distribution control method | |
| CN109207962B (en) | Chemical vapor growth device | |
| US20150361582A1 (en) | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition | |
| US20150000596A1 (en) | Mocvd gas diffusion system with gas inlet baffles | |
| WO2012132575A1 (en) | Shower plate, vapor-phase growth apparatus, and vapor-phase growth method | |
| US6312761B1 (en) | Film forming method for processing tungsten nitride film | |
| CN104178747A (en) | Split type gas spraying component and metal organic chemical vapor deposition device | |
| CN103774115B (en) | Chemical vapor deposition unit | |
| JP2013026358A (en) | Shower plate and vapor phase growth apparatus | |
| JP2010238831A (en) | Vapor phase deposition device, and vapor phase deposition method | |
| TW201500577A (en) | Reaction device and manufacture method for chemical vapor deposition | |
| JP2009249651A (en) | Vapor deposition apparatus and vapor deposition method | |
| KR100966370B1 (en) | Chemical Vapor Deposition Apparatus | |
| CN104183532A (en) | Pedestal used for bearing substrate and substrate processing method thereof | |
| CN220166271U (en) | Deposition preventing device for inner wall of HVPE quartz tube | |
| JP5184410B2 (en) | Cover plate unit and vapor phase growth apparatus including the same | |
| JPH1145858A (en) | Compound semiconductor vapor growth equipment and its method | |
| JP2012084581A (en) | Vapor phase epitaxial growth device | |
| KR20110139097A (en) | Semiconductor manufacturing apparatus, semiconductor manufacturing method and method for cleaning semiconductor manufacturing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai, 201602 Patentee after: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201203, room 2, building 1, 302 Curie Road, Zhangjiang hi tech park, Shanghai Patentee before: DEPOSITION EQUIPMENT AND APPLICATIONS (SHANGHAI) Ltd. |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Split gas spray assembly and metal-organic chemical vapor deposition device Effective date of registration: 20230209 Granted publication date: 20160824 Pledgee: Agricultural Bank of China Limited Shanghai Songjiang Sub-branch Pledgor: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Registration number: Y2023310000023 |