CN220166271U - Deposition preventing device for inner wall of HVPE quartz tube - Google Patents
Deposition preventing device for inner wall of HVPE quartz tube Download PDFInfo
- Publication number
- CN220166271U CN220166271U CN202321620948.8U CN202321620948U CN220166271U CN 220166271 U CN220166271 U CN 220166271U CN 202321620948 U CN202321620948 U CN 202321620948U CN 220166271 U CN220166271 U CN 220166271U
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- CN
- China
- Prior art keywords
- quartz tube
- hvpe
- quartz
- sleeve
- wall
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- 239000010453 quartz Substances 0.000 title claims abstract description 102
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 238000000151 deposition Methods 0.000 title claims abstract description 20
- 230000008021 deposition Effects 0.000 title claims abstract description 17
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title claims abstract 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002775 capsule Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims 5
- 238000002360 preparation method Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- -1 gallium amide Chemical class 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
The utility model relates to the technical field of semiconductor material preparation devices, in particular to an anti-deposition device for an inner wall of an HVPE quartz tube. The technical scheme includes that the gallium boat comprises a first quartz tube, a second quartz tube and a third quartz tube, wherein the first quartz tube, the second quartz tube and the third quartz tube are sequentially arranged from outside to inside, and a gallium boat is arranged in the third quartz tube; the first quartz tube is internally provided with a carrying disc positioned below the third quartz tube and the second quartz tube, the bottom of the carrying disc is provided with a supporting column, the bottom of the supporting column is provided with a base, and the carrying disc is internally provided with a substrate material to be processed; the outer ring of the support column is also provided with a support frame, and the support frame is provided with a sleeve. The utility model has the advantages of optimizing reaction effect, increasing reaction area, improving crystal reaction efficiency, reducing deposition, taking out polycrystal from the easy-collecting box, facilitating the disassembly and installation of the sleeve, reducing the cost of replacement of spare parts and protecting the quartz tube wall.
Description
Technical Field
The utility model relates to the technical field of semiconductor material preparation devices, in particular to an anti-deposition device for an inner wall of an HVPE quartz tube.
Background
Group III-V nitride materials (also called GaN-based materials) mainly composed of GaN, inGaN, and AlGaN alloy materials are new semiconductor materials that have been gaining attention internationally in recent years.
There are various methods for growing GaN-based materials, such as metal organic vapor phase epitaxy (MOCVD), high temperature and high pressure synthesis of GaN single crystals, molecular beam epitaxy sublimation, and Halide Vapor Phase Epitaxy (HVPE), etc., which have great difficulty due to limitations of physical properties of GaN-based materials themselves, have not been put to practical use, and halide vapor phase epitaxy, which can be used for homoepitaxial growth of self-supporting GaN substrates due to high growth rate and lateral-longitudinal epitaxy ratio, has attracted extensive attention and research.
Due to limitations of air flow transport and the like of internal structures of the HVPE system, the uniformity of growth of large-area (> 2 inch) GaN-based materials still needs further research and improvement; in the vertical HVPE growth system, since the reaction cavity can be designed to be axisymmetric, the gas transportation system is far easier and more uniform than the horizontal system, the thickness of the finally grown material is also more uniform, the continuous improvement of the vertical HVPE growth system is of great significance for the growth of GaN-based materials, and in the vertical HVPE system, the reaction of ammonia and GaCl can be blocked to cause the termination of the transportation of GaC1 reaction gas, so that the further progress of the reaction is hindered.
The schematic diagram of the halide vapor phase epitaxy system is shown in fig. 1, vertical HVPE is adopted in fig. 1, the air flow is arranged from top to bottom or vice versa, the principle of the horizontal HVPE system is the same, the air flow direction is horizontal, all the HVPE systems are composed of two main temperature areas, the low temperature area is used for generating gallium chloride (GaC 1), the high temperature area is used for reacting shackles with ammonia gas to generate gallium amide (GaN), the reaction chamber is provided with highly corrosive hydrogen amide gas, the reaction is carried out at high temperature, and the HVPE reaction chamber is of a quartz tube structure.
The basic reaction of the HVPE method to grow gallium nitride is as follows:
low temperature zone
GaC1+NH 3 →GaN+HC1+H 2 High temperature zone
Since the reaction for producing gallium chloride in the low temperature region is a disproportionation reaction, the HVPE system is usually designed as a hot wall reaction, and the entire inside of the reaction chamber and the substrate are kept at high temperature. Due to the diffusion effect of various gases, gallium nitride can grow on a substrate at high temperature, and can be epitaxially grown on the inner wall of the whole reaction chamber, particularly, the inner wall of a quartz tube at the outlet of GaC1 is seriously deposited (the concentration of GaC1 is highest here), and the continuous deposition of GaN can cause the shrinkage and even blockage of a tube orifice, so that the concentration of GaCl above the substrate is reduced, and the uniformity and quality of the growth rate of GaN epitaxy are affected.
Disclosure of Invention
The utility model aims to solve the problems in the prior art and provides an anti-deposition device for an HVPE reaction, which is arranged on the inner wall of a quartz tube.
The technical scheme of the utility model is as follows: the utility model provides a deposition device is prevented to HVPE quartz capsule inner wall, includes from outside to interior first quartz capsule, second quartz capsule, the third quartz capsule that sets gradually, be equipped with the gallium boat in the third quartz capsule, still include:
a support frame interposed between the first quartz tube and the second quartz tube;
and the sleeve is positioned at the top of the support frame and is detachably arranged with the support frame and is used for collecting GaN crystals deposited by HVPE reaction.
Optionally, the internally mounted of first quartz capsule is located the carrier plate of third quartz capsule and second quartz capsule below, the support column is installed to the bottom of carrier plate, the bottom mounting base of support column, the substrate material of waiting to process is placed in the carrier plate.
Optionally, the outer lane array of support column installs multiunit support frame, every group the draw-in groove has all been seted up at the top of support frame.
Optionally, the inner and outer walls of the bottom of the sleeve are provided with limiting grooves, and the sleeve is fixedly supported by clamping between the limiting grooves and the clamping grooves.
Optionally, the bottom end of the sleeve extends into the clamping groove for fixing and supporting the sleeve.
Optionally, the sleeve is located at a gap between the first quartz tube and the second quartz tube, and the bottom end of the second quartz tube extends into the inner cavity of the sleeve.
Optionally, the bottom ends of the second quartz tube and the third quartz tube are flush.
Optionally, the first quartz tube, the second quartz tube and the third quartz tube are quartz tubes.
Optionally, the sleeve is any one of a quartz tube, a graphite tube or a tube made of tungsten-molybdenum material.
Compared with the prior art, the utility model has the following beneficial technical effects:
1. according to the utility model, the sleeve is arranged outside the second quartz tube and the carrier disc, so that hydrogen chloride and gallium nitride are further reacted and corroded, gallium nitride crystals are fully reacted, the generation of deposited gallium nitride is reduced, the purity of gallium nitride on a substrate material substrate is improved, and the quality of semiconductor preparation is improved;
2. according to the utility model, through the arrangement of the support frame and the sleeve, gallium nitride crystals deposited on the inner wall of the first quartz tube are conveniently transferred and deposited on the inner wall of the sleeve, the amount of the crystals deposited on the inner wall of the first quartz tube is prevented, the sleeve is convenient to replace and disassemble, polycrystal is easy to collect, the sleeve is small in size and low in preparation cost;
3. in conclusion, the utility model has the advantages of optimizing the reaction effect, increasing the reaction area, improving the crystal reaction efficiency, reducing the deposition, facilitating the collection of the box to take out the polycrystal, facilitating the disassembly and the assembly of the sleeve, reducing the cost of replacing spare parts and protecting the quartz tube wall.
Drawings
FIG. 1 shows a schematic diagram of a prior art HVPE internal gas transport structure;
FIG. 2 is a schematic illustration of the internal gas transport structure of the HVPE of the present utility model;
fig. 3 is a schematic cross-sectional view of the structure of the support bracket and sleeve of fig. 2.
Reference numerals: 1. a first quartz tube; 2. a second quartz tube; 3. a third quartz tube; 4. a carrier plate; 5. a support column; 6. a base; 7. a substrate material; 8. a support frame; 81. a clamping groove; 9. a sleeve; 91. and a limit groove.
Detailed Description
The technical scheme of the utility model is further described below with reference to the attached drawings and specific embodiments.
Examples
As shown in fig. 1-3, the deposition preventing device for the inner wall of the HVPE quartz tube provided by the utility model comprises a first quartz tube 1, a second quartz tube 2 and a third quartz tube 3, wherein the first quartz tube 1, the second quartz tube 2 and the third quartz tube 3 are sequentially arranged from outside to inside, the first quartz tube 1, the second quartz tube 2 and the third quartz tube 3 are quartz tubes, the bottom ends of the second quartz tube 2 and the third quartz tube 3 can be flush or the bottom end of the third quartz tube 3 is slightly lower than the bottom end of the second quartz tube 2, so that gases introduced into the second quartz tube 2 and the third quartz tube 3 do not interfere with each other, and a gallium boat is arranged in the third quartz tube 3; the inside mounting of first quartz capsule 1 has the carrying tray 4 that is located the third quartz capsule 3 and 2 below, and support column 5 is installed to the bottom of carrying tray 4, and base 6 is installed to the bottom of support column 5, still is equipped with in the carrying tray 4 and places the substrate material 7 that waits to process.
The outer ring of the support column 5 is also provided with support frames 8, the outer ring array of the support column 5 is provided with four or more groups of support frames 8, and the top of each group of support frames 8 is provided with a clamping groove 81; the support frame 8 is clamped with the sleeve 9, the inner wall and the outer wall of the bottom of the sleeve 9 are respectively provided with a limit groove 91, the limit grooves 91 and the clamping grooves 81 are clamped, or the bottom end of the sleeve 9 extends into the clamping grooves 81 to be used for fixing and supporting the sleeve 9. The sleeve 9 is located at the gap between the first quartz tube 1 and the second quartz tube 2. The sleeve 9 is any one of a quartz tube, a graphite tube or a tube made of tungsten-molybdenum material.
The HVPE treatment method in the prior art and the utility model is that the substrate material 7 is put in the carrying disc 4 after being cleaned and dried for reaction, the ammonia gas and gallium chloride gas outlets adopt axisymmetric structures, and the horizontal plane center is symmetric on two sides of the central axis. The reaction chamber pressure is maintained at 0.1-1 atm. The growth reaction in this embodiment is a hot wall reaction, and premixing ammonia gas and GaCl gas by diffusion may cause a spatial reaction, and GaN formed by such a pre-reaction may be deposited on the inner wall of the first quartz tube 1; the concentration of GaCl transported to the substrate material 7 is reduced to reduce the growth rate, resulting in termination of GaN growth on the growth area substrate; the deposited GaN crystal causes the inner wall of the first quartz tube 1 to be blocked, and is not easy to clean.
In this embodiment, through being provided with support frame 8 between first quartz capsule 1 and placing the carrying disc 4 of substrate material 7, the setting of sleeve pipe 9 can increase reaction area to improve the deposition effect of gaN on substrate material 7, sleeve pipe 9 is the pipe of graphite preparation or quartz capsule and tungsten molybdenum material preparation pipe any one simultaneously, thereby sleeve pipe 9 preparation material is easy to obtain, and gaN can deposit at the inner wall of sleeve pipe 9, can not deposit at the inner wall of first quartz capsule 1, consequently first quartz capsule 1 obtains the protection, also conveniently dismantles sleeve pipe 9 and easy collection polycrystal, repeatedly usable after the washing, the reduce cost.
The above-described embodiment is only one alternative embodiment of the present utility model, and many alternative modifications and combinations of the above-described embodiment may be made by those skilled in the art based on the technical solutions of the present utility model and the related teachings of the above-described embodiment.
Claims (9)
- The utility model provides a deposition device is prevented to HVPE quartz capsule inner wall, includes first quartz capsule (1), second quartz capsule (2), third quartz capsule (3) that set gradually from outside to inside, be equipped with the gallium boat in third quartz capsule (3), its characterized in that still includes:a support frame (8) between the first quartz tube (1) and the second quartz tube (2);and the sleeve (9) is positioned at the top of the support frame (8) and is detachably arranged with the support frame (8) and is used for collecting GaN crystals deposited by the HVPE reaction.
- 2. The HVPE quartz tube inner wall deposition preventing device according to claim 1, wherein the first quartz tube (1) is internally provided with a carrier disc (4) positioned below the third quartz tube (3) and the second quartz tube (2), the bottom of the carrier disc (4) is provided with a support column (5), the bottom of the support column (5) is provided with a base (6), and a substrate material (7) to be processed is placed in the carrier disc (4).
- 3. The HVPE quartz tube inner wall deposition preventing device according to claim 2, wherein a plurality of groups of supporting frames (8) are arranged on the outer ring array of the supporting columns (5), and clamping grooves (81) are formed in the top of each group of supporting frames (8).
- 4. The HVPE quartz tube inner wall deposition preventing device according to claim 3, wherein the inner wall and the outer wall of the bottom of the sleeve (9) are both provided with limiting grooves (91), and the sleeve (9) is fixedly supported by clamping between the limiting grooves (91) and the clamping grooves (81).
- 5. An HVPE quartz tube inner wall deposition prevention apparatus according to claim 3, wherein the bottom end of the sleeve (9) extends into a clamping groove (81) for securing the support sleeve (9).
- 6. The HVPE quartz tube inner wall deposition prevention apparatus of claim 5, wherein the sleeve (9) is located at a gap between the first quartz tube (1) and the second quartz tube (2), and the bottom end of the second quartz tube (2) extends into an inner cavity of the sleeve (9).
- 7. The HVPE quartz tube inner wall deposition prevention apparatus of claim 1 wherein the bottom ends of the second quartz tube (2) and the third quartz tube (3) are flush.
- 8. The HVPE quartz tube inner wall deposition prevention apparatus according to claim 1, wherein the first quartz tube (1), the second quartz tube (2) and the third quartz tube (3) are quartz tubes.
- 9. The HVPE quartz tube inner wall deposition prevention apparatus according to claim 1, wherein the sleeve (9) is any one of a quartz tube, a graphite tube, or a tube made of tungsten molybdenum material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321620948.8U CN220166271U (en) | 2023-06-25 | 2023-06-25 | Deposition preventing device for inner wall of HVPE quartz tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321620948.8U CN220166271U (en) | 2023-06-25 | 2023-06-25 | Deposition preventing device for inner wall of HVPE quartz tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220166271U true CN220166271U (en) | 2023-12-12 |
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ID=89056972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321620948.8U Active CN220166271U (en) | 2023-06-25 | 2023-06-25 | Deposition preventing device for inner wall of HVPE quartz tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220166271U (en) |
-
2023
- 2023-06-25 CN CN202321620948.8U patent/CN220166271U/en active Active
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