TW201337032A - Metal organic vapor deposition device - Google Patents

Abstract

Provided is a metal organic vapor deposition device including: a reaction chamber; a base seat arranged at the bottom of the reaction chamber; and a spraying assembly arranged at the top of the reaction chamber. The spraying assembly includes a central air inlet device and a peripheral air inlet device for enclosing the central air inlet device. The central air inlet device assigns a first gas as a first flux to the area between the central air inlet device and the base seat; and the peripheral air inlet device assigns a second gas as a second flux to the peripheral area of the reaction chamber. The first and second gases are carrier gases, group III metallic organic source gases and group V hydride source gases. The group III metallic organic source gas and the group V hydride source gas in the first and the second gases respectively have a first flow ratio and a second flow ratio; and the first flow ratio is different from the second flow ratio. The metal organic vapor deposition device can increase the uniformity and formation rate of a film.

Description

Metal organic vapor deposition apparatus

The invention relates to the technical field of chemical vapor deposition, in particular to a metal organic vapor deposition apparatus.

Chemical vapor deposition (CVD) is a process in which a reaction substance is chemically reacted under a gaseous condition to form a solid substance deposited on a surface of a heated solid substrate to obtain a solid material, which is passed through a chemical vapor deposition apparatus. Achieved. Specifically, the CVD apparatus passes the reaction gas into the reaction chamber through the intake device, and controls reaction conditions such as pressure, temperature, and the like of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process step. In order to deposit a desired film, it is generally required to introduce a plurality of different reaction gases into the reaction chamber, and it is also necessary to introduce a carrier gas or a purge gas or other non-reactive gas into the reaction chamber, so that a plurality of CVD devices need to be provided. Intake device.

Metal Organic Chemical Vapor Deposition (MOCVD) device is mainly used for thin layer of III-V group, II-VI compound and alloy of gallium nitride, gallium arsenide, indium phosphide and zinc oxide. The preparation of crystalline functional structural materials, as the application range of the above functional structural materials continues to expand, MOCVD devices have become one of the important devices of chemical vapor deposition devices. MOCVD generally uses a Group II or Group III metal organic source and a Group VI or Group V hydride source as a reaction gas, and uses hydrogen or nitrogen as a carrier gas to carry out vapor phase epitaxial growth on a substrate by thermal decomposition reaction, thereby growing various kinds. A thin layer single crystal material of a II-VI compound semiconductor, a III-V compound semiconductor, and a multicomponent solid solution thereof. Since the Group II or Group III metal organic source and the Group VI or Group V hydride source have different transmission conditions, it is necessary to pass different The gas device transports a Group II or Group III metal organic source and a Group VI or Group V hydride source, respectively, over the substrate.

The metal organic chemical vapor deposition apparatus in the prior art generally comprises: a reaction chamber; a shower assembly located at the top of the reaction chamber, the spray assembly includes two air intake devices, and the two air intake devices respectively a Group or Group III metal organic source and a Group VI or Group V hydride source are transported over the substrate; a susceptor disposed opposite the shower assembly, the pedestal having a heating unit for supporting and heating Substrate.

For more information on metal organic chemical vapor deposition apparatus, please refer to US Patent Publication No. US2009/0250004A1.

However, the film formed by the conventional metal organic chemical vapor deposition apparatus has unevenness and a problem of low film formation rate.

The problem to be solved by the present invention is to provide a metal organic vapor deposition apparatus which improves the uniformity of a film formed by the metal organic vapor deposition apparatus while increasing the rate of film formation.

In order to solve the above problems, the present invention provides a metal organic vapor deposition apparatus comprising: a metal organic vapor deposition apparatus comprising: a reaction chamber for performing metal organic vapor deposition; and a susceptor located at the bottom of the reaction chamber The susceptor is configured to carry a substrate to be deposited; a shower assembly located at the top of the reaction chamber, the shower assembly is used to distribute reactive gases Within the reaction chamber, the shower assembly includes a central air intake device and a peripheral air intake device surrounding the central air intake device, wherein the central air intake device is configured to use the first gas as a first flux Distributing to a region between the central gas inlet device and the susceptor, the first gas is a group III metal organic source gas, a group V hydride source gas, and a carrier gas, wherein the group III metal organic in the first gas The source gas and the group V hydride source gas have a first flow ratio, and the peripheral air intake means is for distributing the second gas to the peripheral region of the reaction chamber in a second flux, thereby attenuating heat of the first gas distribution The convection vortex, the second gas is a carrier gas, a group III metal organic source gas, and a group V hydride source gas, wherein the group III metal organic source gas and the group V hydride source gas in the second gas have a second flow ratio, and the second flow ratio is different from the first flow ratio.

Optionally, the radius of the central air intake device is greater than a radius of the base of 15 to 25 mm.

Optionally, the distance between the central air intake device and the base is 20 to 30 mm.

Optionally, the second flux is 2 to 10 times of the first flux.

Optionally, the second flow ratio is greater than 9 or less than 1/9.

Optionally, the rotation speed of the base is 900 RPM to 1500 RPM.

Optionally, the peripheral air intake device includes a third air intake device and a cooling device.

Optionally, the third air intake device includes a plurality of sub air intake devices.

Optionally, the plurality of sub-intake devices respectively transport the Group III metal organic source gas and the carrier gas, and the Group V hydride source gas and the carrier gas to a peripheral region of the reaction chamber.

Optionally, the peripheral air intake device has a peripheral air inlet located on a side in contact with the reaction chamber.

Optionally, the number of the peripheral air inlets is 1 to 4.

Optionally, the group III metal organic source comprises one or more of Ga(CH 3 ) 3 , In(CH 3 ) 3 , Al(CH 3 ) 3 , Ga(C 2 H 5 ) 3 , and Zn(C 2 H 5 ) 3 gases.

Optionally, the Group V hydride source comprises one or more of NH3, PH3, and AsH3 gases.

Optionally, the carrier gas is one or both of nitrogen and hydrogen.

Optionally, the central air intake device includes a first air intake device, a second intake device, and a cooling device.

Optionally, the first air intake device transmits a group III metal organic source gas and a carrier gas to a region between the central air intake device and the base, and the first air intake device includes a first air inlet.

Optionally, the second air intake device transmits a group V hydride source gas and a carrier gas to a region between the central air intake device and the base, and the second air intake device includes a second air inlet.

Compared with the prior art, the present invention has the following advantages: the embodiment of the invention provides a metal organic vapor deposition device, which surrounds the peripheral air intake device outside the central air intake device, and the peripheral air intake device is used for the second The gas is distributed to the peripheral region of the reaction chamber by the second flux, and the heat convection in the peripheral region of the reaction chamber can be suppressed; in order to improve the uniformity of the film formed at the center of the susceptor, it is necessary to increase the rotation speed of the susceptor. After the rotation speed of the seat is increased, the thermal convection in the peripheral region is more serious, resulting in a decrease in the uniformity of the film formed in the edge region of the pedestal; therefore, in the state where the susceptor is at a high rotational speed, the peripheral air intake device supplements the peripheral region of the reaction chamber. The two gases can suppress the thermal convection in the peripheral region of the reaction chamber, and improve the uniformity of the film formed in the edge region of the susceptor; further, the base of the metal organic vapor deposition device is at a high rotation speed from the center of the susceptor The overall uniformity of the film formed from the region to the edge region is improved.

Further, when the rotation speed of the susceptor is 900 RPM to 1500 RPM, it belongs to a high rotation state; the high rotation speed of the susceptor can reduce the influence of the heat convection vortex during the first gas distribution, and the uniformity of the film formed at the center of the pedestal is improved. Thereby, the overall uniformity of the film formed from the central region of the susceptor to the edge region in the state of high rotational speed of the metal organic vapor deposition apparatus At the same time, the high rotational speed of the susceptor also increases the rate of film formation.

Further, the second flux is 2 to 10 times of the first flux, so that the second gas can effectively resist the upward flow of the first gas in the peripheral region due to the influence of the heated convection vortex, thereby eliminating heat convection. The effect of vortex on the uniformity of the formation of the film.

Further, the radius of the central air intake device is greater than the radius of the base of 15 to 25 mm, so that the position of the second gas is distributed so as to impede the upward flow of the first gas in the peripheral region due to the influence of the heated convection vortex, thereby eliminating heat. Convection vortex increases the uniformity of the formed film.

Further, the second gas is a carrier gas, a group III metal organic source gas, and a group V hydride source gas, so that the second gas can participate in the reaction to form a thin film, thereby modifying the film formed on the surface of the substrate to be deposited on the edge of the susceptor. Inhomogeneity.

100‧‧‧reaction chamber

101‧‧‧Base

102‧‧‧Substrate to be deposited

103‧‧‧Spray assembly

104‧‧‧ Support

105‧‧‧heating unit

106‧‧‧Exhaust valve

110‧‧‧Center air intake

111‧‧‧ Peripheral air intake

113‧‧‧ Third air intake

120‧‧‧ peripheral air intake

130‧‧‧First air intake

131‧‧‧Second air intake

132‧‧‧Cooling device

133‧‧‧The first gas supply pipe

134‧‧‧Second air supply pipe

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional structural view showing a metal organic vapor phase deposition apparatus of the present invention; and Fig. 2 is a schematic plan view showing a shower assembly of the metal organic vapor phase deposition apparatus of the present invention in a direction of AA'.

When the thin film deposition process is performed by the existing metal organic chemical vapor deposition apparatus, the rotation rate of the susceptor cannot be increased, the low rotation speed is less than 500 RPM, the film formation rate is low, and the film formed in the central portion of the susceptor is uneven.

The inventors have found through research that the film non-uniformity formed in the central region at the low rotational speed is caused by the thermal convection vortex due to the temperature between the shower assembly and the susceptor. Poor, causing the convection of the gas to form a vortex, causing the reaction gas to fall back from the edge of the pedestal to the central region of the susceptor, resulting in film non-uniformity.

Existing metal organic chemical vapor deposition device, distance of spray assembly to base Depending on the specific process requirements, when the process requires that the distance from the spray assembly to the base is less than 20 mm, it is difficult to be between the spray assembly and the base due to the small size of the spray assembly to the base. The region generates a heat convection vortex, so that the film in the central region of the susceptor is uniformly deposited, and the susceptor can form a film at a low rotational speed of less than 500 RPM. However, due to the low rotational speed, the film formation rate is correspondingly low; when the shower assembly is When the distance of the pedestal is greater than 20 mm, the distance from the shower assembly to the susceptor is likely to cause a convection vortex, and the reaction gas will fall back from the edge region of the pedestal to the central region of the pedestal, so that the film deposition in the central region of the pedestal is not Evenly.

The inventors of the present invention provide a chemical vapor deposition apparatus for increasing the rotational speed of the susceptor of the metal organic chemical vapor deposition apparatus, thereby uniformizing the formed film from the center to the edge of the substrate while increasing the rate of film formation. Included: a reaction chamber for performing metal organic vapor deposition; a susceptor at the bottom of the reaction chamber, the susceptor for carrying a substrate to be deposited; a shower assembly at the top of the reaction chamber, the shower An assembly for distributing a reaction gas into the reaction chamber, the spray assembly including a central air intake device and a peripheral air intake device surrounding the central air intake device, wherein the central air intake device is for A gas is distributed in a first flux to a region between the central intake device and the susceptor, the first gas being a Group III metal organic source gas, a Group V hydride source gas, and a carrier gas, the peripheral air intake device Means for distributing a second gas to a peripheral region of the reaction chamber in a second flux to attenuate a heat convection vortex of the first gas distribution, the second gas being a carrier gas and a Group III metal organic source gas One of a bulk or a group V hydride source gas.

Embodiments of the present invention provide a metal organic vapor deposition apparatus that surrounds a peripheral air intake device outside a central air intake device, and the peripheral air intake device is configured to distribute a second gas to the reaction chamber in a second flux Peripheral area capable of suppressing heat pairs in the peripheral region of the reaction chamber Flow; in order to improve the uniformity of the film formed at the center of the susceptor, it is necessary to increase the rotational speed of the susceptor. However, when the rotational speed of the susceptor is increased, the thermal convection in the peripheral region is more serious, resulting in uniformity of the film formed at the edge region of the pedestal. The property is reduced; therefore, in the state of high rpm of the susceptor, the peripheral air intake device supplementing the peripheral region of the reaction chamber to the second gas can suppress the thermal convection in the peripheral region of the reaction chamber, and improve the uniformity of the film formed in the edge region of the pedestal; Further, the overall uniformity of the film formed from the central portion of the base to the edge region of the susceptor of the metal organic vapor deposition apparatus is increased in a state of high rotation speed. On the other hand, the high rotational speed of the susceptor also increases the rate of film formation.

Further, the second gas is a carrier gas, a group III metal organic source gas, and a group V hydride source gas, so that the second gas can participate in the reaction to form a thin film, thereby modifying the film formed on the surface of the substrate to be deposited on the edge of the susceptor. Inhomogeneity.

The metal organic vapor deposition apparatus will be described in detail below with reference to the specific embodiments. Please refer to FIG. 1 and FIG. 2 , wherein FIG. 1 is a schematic cross-sectional structural view of the metal organic vapor deposition apparatus of the embodiment, and FIG. 1 is a schematic plan view of the shower assembly of the metal organic vapor deposition apparatus in the AA' direction, comprising: a reaction chamber 100 for performing metal organic vapor deposition; and a susceptor 101 located at 100 of the bottom of the reaction chamber The pedestal 101 is used to carry the substrate 102 to be deposited.

a shower assembly 103 at the top of the reaction chamber 100 for dispensing a reaction gas into the reaction chamber 100, the spray assembly 103 including a central air intake device 110 and surrounding the center a peripheral air intake device 111 of the intake device 110, wherein the central air intake device 110 is configured to distribute the first gas to a region between the central air intake device 110 and the base 101 with a first flux, the a gas is a group III metal organic source gas, a group V hydride source gas, and a carrier gas, wherein the group III metal organic source gas and the group V hydride source gas in the first gas Having a first flow ratio, the peripheral air intake means for distributing a second gas to a peripheral region of the reaction chamber in a second flux, thereby attenuating a heat convection vortex of the first gas distribution, the second gas a carrier gas, a group III metal organic source gas, and a group V hydride source gas, wherein the group III metal organic source gas and the group V hydride source gas in the second gas have a second flow ratio, and the The second flow ratio is different from the first flow ratio.

Specifically, the shower assembly 103 may be a disc shape, a rectangle, and other structures known to those skilled in the art, and details are not described herein. In the embodiment, the shower assembly 103 and the central air intake device 110 are used. The base 101 and the base 101 are both in the shape of a disk, and the peripheral air intake device 111 is a ring shape surrounding the central air intake device 110.

The peripheral air intake device 111 includes a third air intake device 113 and a peripheral air inlet device 120, and the third air intake device 113 is configured to distribute the second gas to the peripheral region of the reaction chamber with a second flux. The peripheral air inlet 120 is located on a side in contact with the reaction chamber 100, and the peripheral air inlet 120 is one or more for conveying a second gas into the third air intake device 113, so that the second gas can It is uniformly dispersed in the third intake device 113. In this embodiment, referring to FIG. 1 and FIG. 2, the third air intake device 113 is a single integral gas chamber, and the carrier gas, the group III metal organic source gas, and the group V hydride source gas are transmitted to the third. After the air intake device 113 is disposed to the peripheral region of the reaction chamber 100, since the second flow ratio is greater than 9 or less than 1/9, the group III metal organic source gas or the group V hydride is used in the third air intake device 113. The source gas is the main body, which can save material of the device and simplify the structure.

In another embodiment, the third air intake device 113 includes a plurality of sub air intake devices, respectively, the group III metal organic source gas and the carrier gas, the V group hydride source gas, and the carrier gas. Transmission to the peripheral region of the reaction chamber 100 prevents the Group III metal organic source gas and the Group V hydride source gas from reacting in the third intake device 113, clogging the shower port, and causing waste.

The number of the peripheral air inlets 120 is preferably 1-4, so that the second gas can be uniformly dispersed in the third air intake device 113.

In this embodiment, referring to FIG. 1 and FIG. 2, when the third air intake device 113 is a single integral gas chamber, the group III metal organic source gas and the group V hydride source gas are respectively transported through separate gas supply pipes. Then, it is transmitted to the third air intake device 113 through the four peripheral air inlets 120 through the branch pipe.

In another embodiment, when the third air intake device 113 includes the first child air intake device and the second child air intake device, the group III metal organic source gas and the group V hydride source gas are respectively transported through separate air supply ducts. And then transferred to the peripheral air inlet by the branch pipeline, the III group metal organic source gas is transmitted into the first sub-intake device, and the V-group hydride source gas is transmitted into the second sub-intake device, the first sub-intake The device and the second sub-intake device respectively include 1 to 2 peripheral air inlets 120.

The second gas is a carrier gas, a group III metal organic source gas, and a group V hydride source gas, so that the second gas can participate in a reaction of forming a film, and while counteracting the first gas flowing upward from the edge of the susceptor 101 The unevenness of the surface of the substrate 102 to be deposited in the edge region of the susceptor 101 is modified.

The second flow ratio of the second gas is greater than 9 or less than 1/9, so that the second gas is mainly composed of a group III metal organic source gas or a group V hydride source gas, so that the second gas does not make the second gas Affects the reaction of the first gas.

The first flow rate of the first gas is determined by a specific process by metal organic vapor deposition.

Referring to FIG. 2, the central air intake device 110 includes a first air intake device 130 and a second air intake device 131.

The first air intake device 130 distributes a group III metal organic source gas and a carrier gas to a region between the center air intake device 110 and the susceptor 101, and the second air intake device 131 converts the group V hydride source gas and a carrier gas is distributed to a peripheral region of the reaction chamber 100, the first intake air The device 130 and the second air intake device 131 are independently isolated from each other; the group III metal organic source gas and the carrier gas, the group V hydride source gas and the carrier gas are respectively transported into the first through the first air supply duct 133 and the second air supply duct 134, respectively. Intake device 130 and second intake device 131.

In this embodiment, the first air intake device 130 and the second air intake device 131 are respectively a plurality of fan-shaped structures, and are spaced apart from each other to form a disk shape; the group III metal organic source gas and the carrier gas pass through the first A diffusing device in the gas device 130 diffuses the gas into each of the sector-shaped first air intake devices 130, and the group V hydride source gas and the carrier gas diffuse the gas into the respective sectors through a diffusing device in the second air intake device 131. The second air intake device 131; in addition, those skilled in the art can adjust the shape, structure and positional relationship of the first air intake device 130 and the second air intake device 131 according to actual process requirements, which should not be too limited.

In this embodiment, referring to FIG. 2, the first air intake device 130 and the second air intake device 131 are respectively two sets of fan-shaped structures, and are spaced apart from each other to form a disk shape, which can make the gas reaction more uniform and form the same. The film uniformity is improved.

The distance from the central air intake device 110 to the base 101 in this embodiment ranges from 20 to 40 mm. As described above, the distance from the central air intake device 110 to the base 101 ranges from 20 to 20 When ~40mm, it is easy to cause thermal convection vortex to make the film deposition on the surface of the substrate 102 to be deposited in the central region of the susceptor 101 uneven, and it is necessary to increase the rotation speed of the susceptor 101 to more than 900 RPM to eliminate the influence of the heat convection vortex, and at the same time, the periphery The second gas disposed in the air inlet device 111 can modify the uniformity of the deposited film on the surface of the substrate 102 to be deposited in the edge region of the susceptor 101, so that the film formed on the surface of the substrate 102 to be deposited from the center to the edge surface is uniform; When the distance from the central air intake device 110 to the susceptor 101 ranges from 20 to 40 mm, the deposition process may be performed at a high rotational speed of the susceptor 101 with a rotational speed greater than 900 RPM to improve the uniformity of film deposition and improve the film. Growth rate.

The rotation speed of the susceptor 101 in this embodiment ranges from 900 RPM to 1500 RPM, preferably from 900 RPM to 1200 RPM. When the rotation speed of the susceptor 101 is greater than 900 RPM, the heat convection The vortex-induced unevenness of film deposition on the surface of the substrate 102 to be deposited in the central region of the susceptor 101 is eliminated, and when the susceptor rotation speed is greater than 1000 RPM, the rate of film deposition on the surface of the substrate 102 to be deposited is increased.

The radius of the central air intake device 110 is greater than the radius of the base 101 by 15 to 25 mm. When the radius of the central air intake device 110 is greater than the radius of the base 101 by 15 to 25 mm, the second gas distributed by the peripheral air intake device 111 can be the first Gas counteracting, wherein the first gas is between the central air intake 110 and the edge region of the base 101, subject to thermal convection between the central air intake 110 and the base 101, and the high speed of the base 101 The effect flows upward from the edge of the pedestal 101.

The second flux is 2 to 10 times of the first flux, so that the second gas can completely offset the first gas flowing upward from the edge of the susceptor 101, and the surface of the substrate 102 to be deposited in the edge region of the susceptor 101 The film is modified, the first flux being related to a particular metal organic vapor deposition process and the radius of the susceptor 101.

In this embodiment, the material of the reaction chamber 100 is stainless steel.

The base 101 includes a support base 104 for supporting one or more substrates to be deposited 102, and a heating unit 105 below the support base 104 for heating a substrate to be deposited. 102.

The material of the support base 104 is graphite. Preferably, the SiC layer is disposed on the surface of the graphite, so that the support seat has the characteristics of high temperature resistance, oxidation resistance, acid salt resistance and organic reagents, and the physical and chemical properties are more stable.

The heating unit 105 can be integrated into the support base 104, and can be a radio frequency heater, an infrared radiant heater or a resistance heater, etc., and can be differently selected according to the size and material of the reaction chamber 100. In the case of a radio frequency heater, the support 104 is heated by inductive coupling by the RF coil. This form of heating is often employed in large reaction chambers 100, but typically the system is too complex. In order to avoid the complexity of the system, in a slightly smaller reaction chamber 100, red is usually used. The external radiant heater converts the thermal energy generated by the tungsten halogen lamp into infrared radiant energy, and the support absorbs the infrared radiant energy and converts it back into thermal energy. When the electric resistance heater is used, the heating of the support wire 104 is achieved by the heat generation of the electric resistance wire.

The group III metal organic source gas includes one or more of Ga(CH3)3, In(CH3)3, Al(CH3)3, Ga(C2H5)3, Zn(C2H5)3 gas; the V group hydrogenation The source gas includes one or more of NH3, PH3, and AsH3 gases; the group III metal organic source gas and the group V hydride source gas are thermally decomposed, and then reacted in the reaction chamber to form a surface of the substrate 102 to be deposited. film.

The carrier gas is one or more of nitrogen, hydrogen, and an inert gas, and the carrier gas is used to disperse the gas participating in the reaction, so that the arrangement and reaction in the reaction chamber 100 are relatively uniform and stable.

The central air intake device 110 and the peripheral air intake device 111 each have a shower port (not shown) disposed on a side opposite to the base 101 for distributing gas to the reaction chamber 100. The spout can be any shape known to those skilled in the art, for example, a plurality of round holes or a plurality of slots, and the like, which is not described herein. In the embodiment, the shower port is a plurality of circular holes.

The central air intake device 110 and the peripheral air intake device 111 further include a cooling device 132 for cooling the group III metal organic source gas and the group V hydride source gas to bring the gas to a decomposition temperature. The cooling device 132 is disposed to overlap the first air intake device 130, the second air intake device 131, and the third air intake device 113. The cooling device 132 has a cooling passage for introducing a cooling gas or a cooling liquid. Specifically, the cooling device 132 may be cooled by water cooling or air-cooled. The corresponding specific structure is well known to those skilled in the art, and therefore will not be described herein. In addition, the cooling device 132 also causes the spray assembly to be at a lower temperature, extending the life of the spray assembly.

The metal organic vapor deposition apparatus further includes: a temperature sensor and a sense of pressure A detector (not shown) consisting of the detectors; which are respectively connected to control devices (not shown) of the temperature sensors and the air pressure sensors.

The air pressure sensor may be one, disposed in an area between the central air intake device 110 and the base 101, and transmit the current air pressure of the detected area between the central air intake device 110 and the base 101 to The control device analyzes the difference between the current air pressure and the air pressure required for the thin film deposition reaction, and the control device realizes the air pressure adjustment of the reaction chamber 100 until the current air pressure in the region between the central air intake device 110 and the susceptor 101 It is equal to the pressure required for the film deposition reaction.

The temperature sensor may be multiple, and a temperature sensor may be respectively disposed on the first air intake device 130, the second air intake device 131, the peripheral air intake device 111, the cooling device 132, and the heating unit 105, respectively. For detecting the current temperature of the first air intake device 130, the current temperature of the second air intake device 131, the current temperature of the peripheral air intake device 111, the current temperature of the cooling device 132, and the current temperature of the heating unit 105, and detecting The above temperature is sent to the control device, and the control device adjusts the temperature of each device to the desired temperature by analysis, so that the process of film deposition can be controlled more accurately.

The metal organic vapor deposition apparatus further includes an exhaust valve 106 for discharging the remaining gas in the reaction chamber 100.

In summary, the embodiments of the present invention provide a metal organic vapor deposition apparatus, which surrounds a peripheral air intake device outside a central air intake device, and the peripheral air intake device is configured to distribute the second gas in a second flux. To the peripheral region of the reaction chamber, heat convection in the peripheral region of the reaction chamber can be suppressed; in order to improve the uniformity of the film formed at the center of the susceptor, it is necessary to increase the rotational speed of the susceptor, but when the susceptor rotation speed is increased, the peripheral region is increased. The thermal convection is more serious, resulting in a decrease in the uniformity of the film formed in the edge region of the pedestal; therefore, in the state of high rpm of the susceptor, the peripheral air intake device supplements the peripheral region of the reaction chamber with the second gas to suppress the periphery of the reaction chamber. The thermal convection of the region increases the uniformity of the film formed in the edge region of the pedestal; The susceptor of the vapor deposition apparatus is improved in overall uniformity of the film formed from the central region of the susceptor to the edge region at a high rotational speed.

Further, when the rotation speed of the susceptor is 900 RPM to 1500 RPM, it belongs to a high rotation state; the high rotation speed of the susceptor can reduce the influence of the heat convection vortex during the first gas distribution, and the uniformity of the film formed at the center of the pedestal is improved. Therefore, the overall uniformity of the film formed from the central region of the susceptor to the edge region at the high rotational speed of the metal organic vapor deposition apparatus is improved; at the same time, the high rotational speed of the susceptor also increases the rate of formation of the thin film.

Further, the second flux is 2 to 10 times of the first flux, so that the second gas can effectively resist the upward flow of the first gas in the peripheral region due to the influence of the heated convection vortex, thereby eliminating heat convection. The effect of vortex on the uniformity of the formation of the film.

Further, the radius of the central air intake device is larger than the radius of the base, so that the position of the distribution of the second gas just abuts against the flow of the first gas in the peripheral region due to the influence of the heated convection vortex, thereby eliminating the heat convection vortex To improve the uniformity of the formed film.

Further, the second gas is a carrier gas, a group III metal organic source gas, and a group V hydride source gas, so that the second gas can participate in the reaction to form a thin film, thereby modifying the film formed on the surface of the substrate to be deposited on the edge of the susceptor. Inhomogeneity.

Although the present invention has been described above, the present invention is not limited thereto. Any changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope defined by the appended claims.

100‧‧‧reaction chamber

101‧‧‧Base

102‧‧‧Substrate to be deposited

103‧‧‧Spray assembly

104‧‧‧ Support

105‧‧‧heating unit

106‧‧‧Exhaust valve

110‧‧‧Center air intake

111‧‧‧ Peripheral air intake

113‧‧‧ Third air intake

120‧‧‧ peripheral air intake

132‧‧‧Cooling device

133‧‧‧The first gas supply pipe

134‧‧‧Second air supply pipe

Claims (17)

A metal organic vapor deposition apparatus comprising: a reaction chamber for performing metal organic vapor deposition; a susceptor at the bottom of the reaction chamber, the susceptor for carrying a substrate to be deposited; and a top portion of the reaction chamber a spray assembly for dispensing a reaction gas into the reaction chamber, the spray assembly including a central air intake device and a peripheral air intake device surrounding the central air intake device, wherein The central air intake device is configured to distribute the first gas to a region between the central air intake device and the base at a first flux, the first gas being a group III metal organic source gas, a group V hydride source gas, and a carrier Gas, wherein the group III metal organic source gas and the group V hydride source gas in the first gas have a first flow ratio ratio, and the peripheral air intake device is configured to distribute the second gas to the second flux a peripheral region of the reaction chamber, thereby attenuating the thermal convection vortex of the first gas distribution, the second gas being a carrier gas, a Group III metal organic source gas, and a Group V hydride source gas, wherein the second gas is Group III metal organic Group V hydride gas, and having a second source gas flow ratio, and the second flow rate different than the first flow ratio. A metal organic vapor deposition apparatus according to claim 1, wherein the radius of the central air intake means is larger than the radius of the base by 15 to 25 mm. A metal organic vapor deposition apparatus according to claim 1, wherein the distance between the central air intake means and the base is 20 to 30 mm. A metal organic vapor deposition apparatus according to claim 1, wherein the second flux is 2 to 10 times the first flux. A metal organic vapor deposition apparatus according to claim 1, wherein the second flow ratio is greater than 9 or less than 1/9. A metal organic vapor deposition apparatus according to claim 1, wherein the susceptor has a rotational speed of from 900 RPM to 1500 RPM. A metal organic vapor deposition apparatus according to claim 1, wherein said peripheral air intake means comprises a third air intake means and a cooling means. A metal organic vapor deposition apparatus according to claim 7, wherein the third air intake means comprises a plurality of sub air intake means. A metal organic vapor deposition apparatus according to claim 8, wherein the plurality of sub-intake devices respectively transport the group III metal organic source gas and the carrier gas, and the group V hydride source gas and the carrier gas to the reaction The surrounding area of the cavity. A metal organic vapor deposition apparatus according to claim 1, wherein said peripheral air intake means has a peripheral air inlet, said peripheral air inlet being located on a side in contact with said reaction chamber. A metal organic vapor deposition apparatus according to claim 10, wherein the number of the peripheral air inlets is 1-4. The metal organic vapor deposition apparatus of claim 1, wherein the group III metal organic source comprises Ga(CH3)3, In(CH3)3, Al(CH3)3, Ga(C2H5)3, Zn (C2H5)3 gas One or more of them. A metal organic vapor deposition apparatus according to claim 1, wherein the Group V hydride source comprises one or more of NH3, PH3, and AsH3 gases. A metal organic vapor deposition apparatus according to claim 1, wherein the carrier gas is one or both of nitrogen gas and hydrogen gas. A metal organic vapor deposition apparatus according to claim 1, wherein the central air intake means comprises a first air intake means, a second intake means, and a cooling means. A metal organic vapor deposition apparatus according to claim 15, wherein the first air intake device transmits a group III metal organic source gas and a carrier gas to a region between the central air intake device and the susceptor The first air intake device includes a first air inlet. A metal organic vapor deposition apparatus according to claim 15, wherein the second air intake device transmits a group V hydride source gas and a carrier gas to a region between the central air intake device and the susceptor The second air intake device includes a second air inlet.