JP2016162921A - Sic chemical vapor deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an SiC chemical vapor deposition device which inhibits particles from being generated by a material gas and inhibits convection flow and diffusion of the gas in a furnace body.SOLUTION: An SiC chemical vapor deposition device of the invention includes: a furnace body forming a growth space; a placement base provided in the furnace body and on which an SiC wafer is placed; a gas introduction pipe for introducing a material gas into the furnace body; a heat shield disposed around the gas introduction pipe and having through holes; and a cooling gas supply port for introducing a cooling gas into the through holes of the heat shield.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a SiC chemical vapor deposition apparatus.

  Silicon carbide (SiC) has characteristics such as a dielectric breakdown electric field that is an order of magnitude larger than silicon (Si), a band gap that is three times larger, and a thermal conductivity that is about three times higher. Applications to devices, high-frequency devices, high-temperature operating devices, etc. are expected. For this reason, in recent years, SiC epitaxial wafers have been used for the above semiconductor devices.

  The SiC epitaxial wafer uses a SiC single crystal substrate processed from a bulk single crystal of SiC produced by a sublimation method or the like as a substrate for forming an SiC epitaxial film, and usually a chemical vapor deposition method (Chemical Vapor Deposition: It is manufactured by growing a SiC epitaxial film that becomes an active region of a SiC semiconductor device by CVD.

Since the performance of SiC semiconductor devices changes when the thickness and composition of the grown SiC epitaxial film and the concentration of impurities to be added vary, it is required to form a thin film uniformly on the workpiece. Yes.
In order to form a thin film uniformly on the object to be processed in the chemical vapor deposition apparatus, it is important to supply the source gas uniformly to the object to be processed. For this reason, various studies have been conducted.

  For example, Patent Document 1 describes a CVD processing apparatus that once supplies a source gas to a processing chamber and supplies the source gas uniformly into a furnace through a shower member. In addition, in order to reduce the dynamic pressure unevenness of the raw material gas introduced from the shower member into the furnace, the introduction of the raw material gas into the processing chamber is also tapered. By making the inlet of the source gas into the processing chamber tapered, the dynamic pressure unevenness of the source gas introduced into the furnace can be reduced because the flow rate of the gas supplied by the tapered shape is reduced. This is for suppressing the pressure change in the processing chamber.

  In addition, in epitaxial growth, in addition to uniformity, the presence of crystal defects in the epitaxial film adversely affects the characteristics, so that there is a problem of suppressing the generation thereof. One of the causes of crystal defects is particles in the furnace. Particles adhere to the surface of the wafer, and crystal defects are generated starting from the particles. Particles in the furnace body are often generated due to furnace body deposits caused by the source gas. In particular, the SiC chemical vapor deposition apparatus has a problem that since the temperature in the furnace becomes high, the raw material gas is easily decomposed, and the decomposition product is easily deposited in the furnace.

  As for the temperature in the furnace, it is known that a temperature of about 1200 ° C. or higher is necessary to grow a SiC thin film. In particular, 4H-SiC used in electronic devices generally has a high temperature of about 1500 ° C. or higher. It is known that it is used for This temperature is extremely high as compared with a temperature of about 600 ° C. for growing the Si thin film.

  In order to suppress the generation of deposits adhering to the furnace body, for example, in Patent Document 2, a rectified state of the gas on the substrate is formed by a relatively stable gas while passing through another path. Thus, it is described that a highly reactive source gas is supplied to the vicinity of the substrate.

JP 2009-74180 A JP 2011-195346 A

  As a result of intensive studies, the present inventors have found that in order to improve the uniformity of the SiC epitaxial film, convection and diffusion of gas in the furnace body must be considered. It has also been found that most of the particles that cause crystal defects are also generated in the gas introduction pipe, and the decomposition of the reaction gas in the gas introduction pipe must be controlled.

In the CVD processing apparatus of Patent Document 1, it is described that the temperature in the shower head is lower than the reaction temperature of the CVD reaction gas and higher than the liquefaction temperature of the components constituting the CVD reaction gas ( Paragraph 0046). When the temperature is lower than the reaction temperature of the CVD reaction gas, the decomposition of the CVD reaction gas can be suppressed. However, when this configuration is used in an SiC chemical vapor deposition apparatus, SiC requires growth at a high temperature, so that the temperature difference between the surface of the SiC wafer in the furnace and the gas inlet becomes very large. That is, gas convection and diffusion due to a temperature gradient are further promoted, and a uniform SiC epitaxial film cannot be formed. Further, when the flow of the source gas is disturbed, there is a problem in that deposits adhering to the wall surface and the gas introduction pipe are generated as particles, and defects of the SiC epitaxial film are generated. That is, the configuration as in Patent Document 1 can be used in a chemical vapor deposition apparatus such as a Si thin film having a relatively low growth temperature, but chemical vapor deposition that requires a high growth temperature such as SiC. In the apparatus, it is difficult to maintain a temperature at which the source gas does not decompose at all. In addition, if there is a steep part of the temperature gradient in the furnace body, it promotes convection and diffusion, creating harmful effects.
The liquefaction temperature of the components constituting the CVD reaction gas is, for example, 32 ° C. under atmospheric pressure in the case of trichlorosilane, and it is a natural condition in the chemical vapor deposition apparatus to be higher than the temperature.

  Moreover, in the film-forming apparatus of patent document 2, the gas used for reaction is isolate | separated and introduced. For this reason, it is described that it is possible to inhibit reaction between different decomposed reaction gases and to suppress generation of by-products. However, since the first and second gas supply paths are affected by radiation and become high temperature, the supplied gas is decomposed in the gas supply path. These decomposed gases can produce deposits without reacting with different gases, which deposits cause particles. Specifically, for example, it is considered that Si deposits are attached in the first gas supply path for supplying the first reaction gas. If such a deposit is peeled off, it may cause defects in the SiC epitaxial film.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a SiC chemical vapor deposition apparatus that suppresses particles caused by a source gas and suppresses convection and diffusion of gas in the furnace.

As a result of intensive studies, the inventors have found that the problem can be solved by providing a heat shield around the gas introduction pipe and providing a structure for efficiently cooling the heat shield itself, and completed the invention. .
That is, the present invention provides the following means in order to solve the above problems.

(1) The SiC chemical vapor deposition apparatus of the present invention includes a furnace body that constitutes a growth space, a mounting table that is provided in the furnace body, on which a SiC wafer is placed, and a gas that introduces a source gas into the furnace body An introduction pipe, a heat shield disposed around the gas introduction pipe and having a through hole, and a cooling gas supply port for supplying a cooling gas to the through hole of the heat shield are provided.

(2) In the SiC chemical vapor deposition apparatus of (1), the cross-sectional area in the direction perpendicular to the gas flow direction of the through hole may be 100 mm ² or less per through hole.

(3) In the SiC chemical vapor deposition apparatus according to any one of (1) and (2), the through hole may have an inclination with respect to the thickness direction of the heat shield.

(4) The SiC chemical vapor deposition apparatus according to any one of (1) to (3) may include a plurality of the heat shields.

(5) In the SiC chemical vapor deposition apparatus described in (4) above, it is preferable that there are a plurality of the heat shields and the through holes of adjacent heat shields do not overlap in plan view.

(6) In the SiC chemical vapor deposition apparatus according to any one of (1) to (5), the heat shield has a circular shape in plan view, and the slit extends from the center to the outer periphery of the circular heat shield. May be provided.

(7) The SiC chemical vapor deposition apparatus according to any one of (1) to (6), wherein the cooling gas is at least one gas selected from the group consisting of H ₂ , Ar, and He. It may be used.

(8) The SiC chemical vapor deposition apparatus according to any one of (1) to (7) may include a plurality of the gas introduction pipes.

(9) In the SiC chemical vapor deposition apparatus according to any one of (1) to (8) above, a part of the plurality of gas introduction pipes introduces Si-based source gas into the furnace body. Si-based source gas introduction pipe, another part is a C-type source gas introduction pipe for introducing a C-type source gas into the furnace body, and the Si-type source gas introduction pipe and the C-type source gas introduction pipe are Each may be separated.

(10) The SiC chemical vapor deposition apparatus according to any one of the above (1) to (9) includes an outer tube that covers the gas introduction tube, and the gas introduction tube and the outer tube have a double tube structure. The cooling gas may be supplied around the gas introduction pipe from between the gas introduction pipe and the outer pipe.

(11) The SiC chemical vapor deposition apparatus according to any one of the above (1) to (10) may have a vertical furnace structure in which the gas introduction tube is disposed on the top of the mounting table.

An SiC chemical vapor deposition apparatus according to an embodiment of the present invention includes a heat shield disposed around a gas introduction pipe. The SiC chemical vapor deposition apparatus includes a heat shield, thereby reducing radiation and suppressing the temperature of the gas introduction pipe from becoming too high. Further, the heat shield has a through hole, and the cooling gas supplied from the cooling gas supply port can be supplied to the through hole. Therefore, heat shield itself has heat and it can control that the temperature of a gas introduction pipe becomes high by heat conduction from a heat shield.
That is, the source gas is decomposed in the gas introduction pipe, and generation of SiC deposits resulting from the source gas can be suppressed. Further, since the temperature rise is suppressed by reducing radiation, for example, an extreme temperature change such as cooling the gas introduction pipe by water cooling or the like is not caused. Therefore, it is possible to suppress a temperature rise due to a gradual temperature gradient, and to suppress convection and diffusion of gas in the furnace body.

In the SiC chemical vapor deposition apparatus according to one aspect of the present invention, the cross-sectional area in the direction perpendicular to the gas flow direction of the through holes may be 100 mm ² or less per through hole. If the cross-sectional area of the through hole is small, it is possible to increase the effect of suppressing the temperature of the gas introduction pipe from being increased by radiation.

  In the SiC chemical vapor deposition apparatus of the present invention, the through hole may have an inclination with respect to the thickness direction of the heat shield. Since the through hole has an inclination with respect to the thickness direction of the heat shield, the area of the portion where the heat shield is not formed when viewed in plan can be further reduced, and the gas introduction pipe by radiation can be reduced. It can suppress more becoming high temperature. Moreover, since the area of the inner surface of a through-hole becomes large, a heat shield can be cooled more efficiently. Therefore, it can suppress that a gas introduction pipe becomes high temperature by heat conduction.

  The SiC chemical vapor deposition apparatus of the present invention may include a plurality of heat shields. By providing a plurality of heat shields, a radiation reduction effect can be obtained for each heat shield, and the temperature can be changed more gradually and efficiently. Therefore, a rapid temperature change can be avoided, and convection and diffusion of gas in the furnace can be suppressed.

  The SiC chemical vapor deposition apparatus of the present invention preferably has a plurality of heat shields, and the through holes of adjacent heat shields do not overlap in plan view. If there are multiple heat shields and the through-holes of adjacent heat shields do not overlap in plan view, the part where electromagnetic waves propagating radiation can pass without a barrier can be eliminated, and the gas introduction pipe can become hot due to radiation. It can be suppressed more.

  In the SiC chemical vapor deposition apparatus according to an embodiment of the present invention, the heat shield may have a circular shape in plan view, and a slit may be provided from the center portion to the outer peripheral portion of the circular heat shield. Since the SiC chemical vapor deposition apparatus grows the SiC epitaxial film at a high temperature, the heat shield is also subjected to thermal stress by heating. Such thermal stress causes damage to the heat shield. However, if the heat shield has a slit, the thermal stress can be relaxed by the slit, so that the durability of the apparatus can be improved. This slit can also serve as a through hole.

The SiC chemical vapor deposition apparatus according to an embodiment of the present invention may use one or more gases selected from the group consisting of H ₂ , Ar, and He as the cooling gas. These gases can function as a carrier gas or the like when supplied into the furnace. Therefore, it is not necessary to prepare a special gas for cooling, which is efficient in terms of economy.

  The SiC chemical vapor deposition apparatus according to one embodiment of the present invention may have a plurality of gas introduction pipes. If there are a plurality of gas introduction pipes, the source gas can be dispersedly introduced into the furnace. Therefore, it is possible to reduce the amount of deposits attached to each gas introduction pipe. Further, the in-plane uniformity of the introduced gas can be improved.

  In the SiC chemical vapor deposition apparatus according to an embodiment of the present invention, a plurality of gas introduction pipes are part of a Si-based source gas introduction pipe for introducing a Si-based source gas into the furnace, and another part. Is a C-based source gas introduction pipe for introducing a C-type source gas into the furnace, and the Si-type source gas introduction pipe and the C-type source gas introduction pipe may be separated from each other. By separating and introducing the source gas, it is possible to suppress the formation of unnecessary SiC products on the gas introduction tube, the furnace wall surface, and the like.

  An SiC chemical vapor deposition apparatus according to an embodiment of the present invention includes an outer pipe that covers a gas introduction pipe, and the gas introduction pipe and the outer pipe form a double-pipe structure, from between the gas introduction pipe and the outer pipe. The cooling gas may be supplied around the gas introduction pipe. By supplying the cooling gas to the outside of the double pipe structure, the gas introduction pipe, which is the inner pipe, is prevented from coming into direct contact with the heat shield, and the temperature of the gas introduction pipe is prevented from increasing due to heat conduction. Can do. Further, when the cooling gas supplied to the periphery of the gas introduction pipe is configured to flow into the furnace as it is, the raw material gas introduced by the cooling gas can be prevented from flowing around the gas introduction pipe again. That is, it is possible to effectively suppress deposits from adhering to the inlet of the gas inlet pipe.

  The SiC chemical vapor deposition apparatus according to an embodiment of the present invention may have a vertical furnace structure in which a gas introduction tube is disposed on an upper part of a mounting table. Convection due to a temperature gradient is often caused by a temperature difference between the upper and lower sides. Therefore, the present invention is particularly useful in a vertical furnace structure because convection is likely to occur in a vertical furnace structure where a temperature difference is likely to occur between the gas introduction pipe and the mounting table. In addition, it is conceivable that the deposits deposited at the inlet of the gas inlet pipe fall as particles under the gravity due to gravity, and this is also particularly useful in this regard for the vertical furnace structure.

It is a cross-sectional schematic diagram which illustrates typically the SiC chemical growth apparatus which is one Embodiment of this invention. It is the figure which planarly viewed the heat shield used for the SiC chemical vapor deposition apparatus which concerns on one Embodiment of this invention. It is an example of the heat shield used for the SiC chemical vapor deposition apparatus which concerns on 1 aspect of this invention, and is a schematic diagram of the cross section cut | disconnected through the through-hole. It is an example of the heat shield used for the SiC chemical vapor deposition apparatus which concerns on 1 aspect of this invention, and is a cross-sectional schematic diagram in case a heat shield consists of two or more. It is an example of the heat shield used for the SiC chemical vapor deposition apparatus which concerns on 1 aspect of this invention, and is a plane schematic diagram in case a heat shield has a slit. It is a cross-sectional schematic diagram in case the SiC chemical vapor deposition apparatus which concerns on one Embodiment of this invention has several gas introduction pipe | tubes, The lower part of a furnace body is not illustrated for simplicity. It is the figure which planarly viewed the heat shield used when the SiC chemical vapor deposition apparatus which concerns on one Embodiment of this invention has several gas introduction pipes. It is the figure which planarly viewed the heat shield used when the SiC chemical vapor deposition apparatus which concerns on one Embodiment of this invention has several gas introduction pipes. It is a cross-sectional schematic diagram in case the gas introduction tube used for the SiC chemical vapor deposition apparatus which concerns on one Embodiment of this invention has the double tube | pipe structure covered with the outer tube | pipe. It is a cross-sectional schematic diagram of a SiC chemical vapor deposition apparatus when a plurality of through holes for passing a cooling gas are provided around a gas introduction pipe used in the SiC chemical vapor deposition apparatus according to an embodiment of the present invention. For the sake of simplicity, the lower part of the furnace body is not shown. It is a cross-sectional schematic diagram schematically illustrating a SiC chemical growth apparatus according to another embodiment of the present invention, and is a schematic cross-sectional view of a SiC chemical vapor deposition apparatus having a horizontal furnace body.

Hereinafter, an SiC chemical vapor deposition apparatus to which the present invention is applied will be described in detail with reference to the drawings as appropriate.
In the drawings used in the following description, in order to make the characteristics of the present invention easier to understand, the characteristic parts may be shown in an enlarged manner for the sake of convenience, and the dimensional ratios of the respective components are different from actual ones. Sometimes. In addition, the materials, dimensions, and the like exemplified in the following description are examples, and the present invention is not limited to these, and can be appropriately modified and implemented without changing the gist thereof.

With reference to FIG. 1, an example of the SiC chemical vapor deposition apparatus 100 of 1st Embodiment of this invention is demonstrated.
The SiC chemical vapor deposition apparatus 100 according to the first embodiment includes a furnace body 10 that constitutes a growth space, a mounting table 20 that is provided in the furnace body 10 and on which a SiC wafer is placed, and a source gas into the furnace body 10. Are provided, a heat shield 40 disposed around the gas inlet tube 30, and a cooling gas supply port 50 for supplying a cooling gas to the through hole 41 of the heat shield 40. Furthermore, you may provide the partition plate 42 (henceforth the partition plate 42) of the space supplied with the cooling gas for cooling the heat shield 40, and reaction space. Here, the reaction space means a space in which a source gas is supplied in order to perform SiC epitaxial growth. The partition plate 42 prevents the deposition gas from flowing into the cooling gas introduction space from the reaction space. In FIG. 1, the space to which the cooling gas for cooling the heat shield 40 is supplied is completely separated from the reaction space by the partition plate 42. In this case, the SiC chemical vapor deposition apparatus 100 has a flow path through which the cooling gas that has cooled the heat shield 40 flows out of the furnace body 10 (not shown). Further, as will be described later, the space to which the cooling gas for cooling the heat shield 40 is supplied does not have to be completely separated from the reaction space of the furnace body 10 and may be connected. The furnace body 10 has a discharge port 60 for discharging gas. An SiC epitaxial film is grown on the surface of the SiC wafer W by mounting the SiC wafer W on the mounting table 20 and operating the SiC chemical vapor deposition apparatus.
FIG. 1 shows a vertical type chemical vapor deposition apparatus in which a growth substrate is arranged on the lower side, a source gas is supplied from the upper side, and the source gas is distributed from the upper side to the lower side for epitaxial growth. is there. The present invention is not limited to the vertical chemical vapor deposition apparatus, but may be a horizontal chemical vapor deposition apparatus (see FIG. 11).

  The SiC chemical vapor deposition apparatus 100 includes a heat shield 40 around the gas introduction pipe 30. The heat shield 40 has an effect of reducing radiation and suppresses a temperature rise of the gas introduction pipe 30. Therefore, the source gas is decomposed in the gas introduction pipe 30, and the generation of SiC deposits caused by the source gas can be suppressed. Further, since the temperature rise is suppressed by reducing radiation, for example, an extreme temperature change such as cooling the gas introduction pipe by water cooling or the like is not caused. Therefore, it is possible to suppress a temperature rise due to a gradual temperature gradient, and to suppress convection and diffusion of gas in the furnace body.

Here, the principle which can suppress the temperature rise of the gas introduction pipe | tube 30 by providing the heat shield 40 is demonstrated. When epitaxially growing a SiC epitaxial film on a SiC wafer W, it is known that a temperature of about 1200 ° C. or higher is necessary. In particular, 4H—SiC used in an electronic device generally has a high temperature of about 1500 ° C. or higher. It is used. That is, under such a high temperature condition, an electromagnetic wave having a very large wavelength (infrared wavelength) of about several μm is generated, and heat transfer by this electromagnetic wave is thermal radiation.
Heat transfer is roughly divided into three patterns of heat conduction, heat transfer, and heat radiation. If the heat transfer by heat radiation can be inhibited, the temperature rise of the gas introduction pipe 30 can be suppressed.

  Electromagnetic waves are transmitted, absorbed and reflected at the interface between different substances. That is, if a boundary surface of different substances can be formed around the gas introduction pipe 30, heat transfer by electromagnetic waves can be inhibited and the gas introduction pipe 30 can be prevented from becoming high temperature. The heat shield 40 provides such an interface.

  The material constituting the heat shield 40 is not particularly limited as long as it has heat resistance of 1000 degrees or more. For example, solid carbon, carbon members such as SiC coated carbon, TaC coated carbon, metal carbides such as TaC, NbC, and WC, SiC, and the like can be used.

  It is preferable to provide a plurality of heat shields 40. If there are a plurality of heat shields 40, the reflection and absorption of electromagnetic waves by the heat shield 40 are performed, and radiation can be further reduced. Further, since there are a plurality of heat shields 40, the temperature change can be made more gradual. Therefore, convection and diffusion of gas in the furnace can be further suppressed.

  The thickness of the heat shield 40 is preferably 1 mm or more and 30 mm or less. When the thickness of the heat shield 40 is 1 mm or more, the temperature distribution in the in-plane direction can be made uniform by heat conduction in the heat shield 40. That is, it can suppress that temperature rises locally. The effect of increasing the in-plane uniformity by the heat shield 40 does not change greatly even if the thickness of the heat shield 40 is very large. Therefore, it is efficient to set it to 30 mm or less. Moreover, if the thickness of the heat shield 40 is within this range, the strength is sufficient, and processing of the through-hole 41 and the like described later becomes easy.

The material constituting the partition plate 42 is not particularly limited as long as it has a heat resistance of 1000 degrees or more. For example, solid carbon, carbon members such as SiC coated carbon, TaC coated carbon, metal carbides such as TaC, NbC, and WC, SiC, and the like can be used.
In addition, the partition plate 42 inhibits heat transfer by heat radiation. That is, it can also work as a heat shield. However, in order to function as the partition plate 42, its shape is limited according to the shape of the furnace and the gas introduction structure. For example, a location where the thickness is too large or a location where the thickness is too small may occur. Therefore, the function as the heat shield 40 may not be sufficient.

FIG. 2 is a plan view of the heat shield 40 used in the SiC chemical vapor deposition apparatus according to one embodiment of the present invention. When used as the SiC chemical vapor deposition apparatus 100, the gas introduction pipe 30 is disposed at the center of the heat shield 40 in FIG.
The heat shield 40 has a through hole 41, and the cooling gas introduced from the cooling gas supply port 50 can be supplied to the through hole 41. The through hole 41 may be circular or quadrangular, and its shape is not limited. Moreover, even if arrange | positioned at random in the heat shield 40, you may arrange | position regularly. The processing method of the through hole 41 is not particularly limited, and generally used machining or the like can be used.
The heat shield 40 has a through hole 41, and the cooling gas is supplied to the through hole, so that the heat shield 40 itself has heat, and the temperature of the gas introduction pipe 30 is increased by heat conduction from the heat shield 40. This can be suppressed.
The heat shield 40 is arranged around the gas introduction pipe 30, and the hole for arranging the central gas introduction pipe 30 in FIG. 2 is not the through hole 41.
For example, H ₂ , Ar, He, or the like can be used as the cooling gas. An etching gas such as HCl or an impurity doping gas such as N ₂ can also be added. These gases have no fear of deposits due to decomposition, and even when added to the cooling gas, there is no adverse effect.

The cross-sectional area of the through hole 41 in the direction perpendicular to the gas flow direction is preferably 100 mm ² or less per through hole. Moreover, it is preferable that it is 5 mm < ² > or more. If the cross-sectional area of the through hole is small, it is possible to increase the effect of suppressing the gas introduction pipe 30 from becoming high temperature due to radiation. Moreover, if the cross-sectional area of the through hole 41 is 5 mm ² or more, the cooling gas can sufficiently pass through the through hole 41 and the heat shield 40 can be efficiently cooled.

FIG. 3 is an example of a heat shield used in the SiC chemical vapor deposition apparatus according to one aspect of the present invention, and is a schematic view of a cross section cut through a through hole.
The through hole 41 of the heat shield 40 preferably has an inclination with respect to the thickness direction of the heat shield 40. The thickness direction of the heat shield 40 means the Z direction in FIG. When the through hole 41 has an inclination with respect to the thickness direction of the heat shield 40, the area of the portion where the heat shield 40 is not formed can be reduced when viewed in plan, and the gas introduction pipe due to radiation has a high temperature. Can be further suppressed. Moreover, since the area of the inner surface of the through-hole 41 becomes large, the heat shield 40 can be cooled more efficiently. Therefore, it is possible to suppress the gas introduction pipe 30 from becoming high temperature due to heat conduction from the heat shield 40.
Although the inclination angle of the through hole 41 varies depending on the thickness of the heat shield, it is preferable to incline it so that the opposite side cannot be seen through the through hole when seen in a plan view.

FIG. 4 is an example of a heat shield used in the SiC chemical vapor deposition apparatus according to one aspect of the present invention, and is a schematic cross-sectional view when a plurality of heat shields are provided.
As shown in FIG. 4, when there are a plurality of heat shields 40, it is preferable that the through holes 41 of the adjacent heat shields 40 do not overlap in plan view. If there are a plurality of heat shields 40 and the through-holes 41 of adjacent heat shields 40 do not overlap in plan view, it is possible to eliminate a portion where electromagnetic waves propagating radiation can pass without a barrier, and the gas introduction pipe is heated by radiation more. Can be suppressed.

The heat shield 40 has a circular shape in plan view, and is preferably provided with slits from the center portion to the outer peripheral portion of the circular heat shield. FIG. 5 is an example of a heat shield used in the SiC chemical vapor deposition apparatus according to one aspect of the present invention, and is a schematic plan view when the heat shield has a slit. Here, the circular shape only needs to have a substantially circular shape, and includes both a disk and an annulus. The “central part” means the inner periphery of the ring in the case of a ring, and the vicinity of the center in the case of a disk. Since the slit formed in the heat shield 40 is intended to relieve thermal stress, it does not have to be completely centered around the center.
When the SiC shield film is grown, the heat shield 40 is subjected to thermal stress due to heating, and the heat shield 40 is damaged. However, if the heat shield 40 has a slit, the thermal stress can be relaxed by the slit, so that the durability of the apparatus can be improved. Further, by providing the slit only at one place, it is possible to make one continuous member without separating from one end face to the other end face, so that installation and the like can be facilitated and workability can be improved. Moreover, since it is circular, a stress can be disperse | distributed equally with respect to all the directions, and damage can be avoided more. Moreover, when the shape of the upper surface of the furnace body 10 (Y direction in the figure) is circular, the heat shield 40 can be provided without a gap, and thermal radiation can be further suppressed.

  The slit formed in the heat shield 40 can also serve as the through hole 41. Therefore, when laminating a plurality of heat shields 40, it is preferable to shift the positions where the slits are formed for each heat shield 40. By shifting the slit position and laminating the heat shield 40, leakage of radiation from the heat source can be suppressed and thermal efficiency can be increased.

  The shape of the heat shield 40 is not limited to the structure of FIG. As will be described later, when there are a plurality of gas introduction pipes 30, a disk shape may be used as shown in FIG. 7. Furthermore, when the shape of the upper surface (Y direction in the figure) of the furnace body 10 is other than circular, the shape of the upper surface of the furnace body 10 may be matched. By providing the heat shield 40 without a gap, leakage of radiation from the heat source can be further suppressed, and the thermal efficiency can be increased.

  As described above, the SiC chemical vapor deposition apparatus 100 includes the heat shield 40, and the heat shield 40 is cooled by the cooling gas through the through hole 41, so that the temperature of the gas introduction pipe 30 is set to 700 ° C. to 1100. It can be about 0C. If it is this temperature range, it can suppress that source gas decomposes | disassembles and it produces | generates a deposit on the gas introduction pipe | tube 30. FIG. Further, the temperature difference from the mounting table 20 heated to about 1200 ° C. to 1500 ° C. is not large compared to the case of cooling by water cooling or the like, and gas convection and diffusion can be suppressed.

  As shown in FIG. 1, the gas inlet pipe 30 preferably has a tapered inlet 32. The source gas passes through the gas introduction path 31 and is supplied into the furnace body 10 from the introduction port 32. Since the introduction port 32 of the gas introduction tube 30 has a tapered shape, turbulent flow in the vicinity of the introduction port 32 of the gas introduction tube 30 can be prevented. If the turbulent flow can be prevented, the raw material gas is prevented from winding up to the inner wall of the introduction port 32 of the gas introduction pipe 30 and the deposits are prevented from adhering to the vicinity of the introduction port 32 of the gas introduction pipe 30. it can.

As the source gas, Si-based source gas and C-based source gas are used.
As the Si-based source gas, for example, silane (SiH ₄ ) can be used as a silane-based gas, and a chlorine-based Si source-containing gas containing Cl having an etching action such as SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ or the like. (Chloride-based raw materials) can also be used. Further, for example, a gas obtained by adding HCl to silane may be used.
For example, propane (C ₃ H ₈ ) or the like can be used as the C-based source gas.
Simultaneously with these gases, a purge gas may be supplied as the third gas. The purge gas is a gas that does not contain Si or C, and an inert gas (rare gas) such as Ar or He can be used in addition to a gas having an etching action containing H ₂ . Further, when the conductivity type of the SiC epitaxial film laminated on the SiC wafer W is controlled, an impurity doping gas can be simultaneously supplied. For example, N ₂ can be used when the conductivity type is n-type, and TMA (trimethylaluminum) can be used when the conductivity type is p-type.
The Si-based source gas, the C-based source gas, HCl, the purge gas, and the impurity doping gas may be supplied separately or mixed and supplied.

  At this time, the inclination angle θ of the taper of the introduction port 32 is preferably 5 ° or more and 45 ° or less, and more preferably 10 ° or more and 30 ° or less with respect to the extended line of the gas introduction path 31. If the taper gradient angle θ is 5 ° or more and 45 ° or less, it is possible to sufficiently prevent the gas from wrapping around and to effectively suppress the deposit from adhering to the inlet 32.

The cross-sectional area S ₃₂ of the end portion of the inlet 32 on the furnace body 10 side is preferably 1.5 to 6 times the cross-sectional area S ₃₁ immediately before the inlet 32 of the gas inlet path 31. More preferably, it is 2 times or more and 4 times or less. If the shape of the gas introduction pipe 30 is the shape, the change in the gas flow rate can be within a predetermined range, and the gas can be prevented from being circulated sufficiently. That is, it is possible to efficiently suppress deposits from adhering to the introduction port 32.

The average flow velocity (flow rate / cross-sectional area S ₃₁ ) of the gas supplied from the gas introduction pipe 30 into the furnace body 10 in the gas introduction path 31 is preferably 0.001 m / s to 100 m / s, and 0.01 m. More preferably, it is / s-10m / s. By setting the gas flow rate within the above range, the occurrence of turbulent flow in the vicinity of the inlet 32 can be suppressed. That is, it is possible to efficiently suppress deposits from adhering to the introduction port 32.

  It is preferable that a plurality of gas introduction pipes 30 are provided. FIG. 6 is a schematic cross-sectional view of the SiC chemical vapor deposition apparatus 100 having a plurality of gas introduction pipes, and the lower part of the furnace body 10 is not shown for simplicity. If there are a plurality of gas introduction pipes 30, the source gas can be dispersedly introduced into the furnace body 10, and the amount of the source gas supplied together with the gas introduction pipe 30 can be reduced. That is, the amount of deposits attached to each gas introduction pipe 30 can be reduced.

Further, as shown in FIG. 6, a part of the plurality of gas introduction pipes 30 is a Si-type source gas introduction pipe 30 s for introducing a Si-type source gas into the furnace body 10, and another part is a C-type source material. It is a C-based source gas introduction pipe 30c that introduces gas into the furnace body 10, and the Si-type source gas introduction pipe 30s and the C-type source gas introduction pipe 30c are preferably separated from each other. Here, “partial” means that the Si-based source gas 30s and the C-based source gas 30c may be formed in each region, and the Si-based source gas 30s and the C-based source gas 30c form a region. It may not be arranged like this, but each one may be arranged at random. In order to uniformly grow the SiC epitaxial film on the SiC wafer W, it is preferable that the Si-based source gas 30s and the C-based source gas 30c are arranged one by one at random without forming a region.
As shown in FIG. 6, it is possible to suppress unnecessary SiC products from being formed on the gas introduction pipe 30s, the inner wall surface of the furnace body 10, and the like by separately introducing the source gas.

  When the Si-based source gas introduction pipe 30s and the C-type source gas introduction pipe 30c are provided separately, it is preferable that at least the inlet 32s of the Si-type source gas introduction pipe 30s has a tapered shape. Since the temperature at which Si is generated by the decomposition of silane, disilane, dichlorosilane, trichlorosilane, silicon tetrachloride, etc. used as Si source gas is relatively lower than the product generation temperature of C source material, Si deposition It is easy to form things. Therefore, it is preferable that at least the Si-based source gas introduction pipe has a tapered shape. By setting it as the said structure, adhesion of the said Si deposit can be suppressed efficiently.

In addition to the inlet 32s of the Si-based gas inlet tube 30s, the inlet 32c of the C-based source gas inlet tube 30c preferably has a tapered shape.
Compared to the Si deposit, the C deposit is difficult to deposit, but the introduction port 32 s of the Si-based gas introduction pipe 30 s and the introduction port 32 c of the C-based source gas introduction pipe 30 c have a tapered shape, so that the deposit can be further reduced. Adhesion can be suppressed and generation of particles can be suppressed.

FIG. 7 is a plan view of the heat shield 40 used when the SiC chemical vapor deposition apparatus according to one embodiment of the present invention has a plurality of gas introduction pipes 30. When there are a plurality of gas introduction pipes 30, an annular heat shield 40 as illustrated in FIG. 2 may be provided around each gas introduction pipe 30. Further, as shown in FIG. 7, a large disk shape is formed as a whole, and a plurality of gas introduction pipes 30 (in the case of the configuration shown in FIG. 6, Si-based gas introduction pipe 30s and C-based gas introduction pipe 30c) are passed therethrough. It is good also as a structure which provides the hole for this.
Moreover, as shown in FIG. 8, it is good also as a structure where the heat shield is divided | segmented and each heat shield surrounds a separate gas introduction pipe | tube. In FIG. 8, the structure is divided into two parts, but it may be divided into any number.

The gas introduction pipe 30 is covered with an outer pipe 33, and the gas introduction pipe 30 and the outer pipe 33 form a double pipe structure, and the area around the gas introduction pipe 30 is between the gas introduction pipe 30 and the outer pipe 33. It is preferable that the cooling gas can be supplied.
FIG. 9 is a schematic cross-sectional view of a double pipe structure in which the gas introduction pipe 30 is covered with an outer pipe 33 and the gas introduction pipe 30 and the outer pipe 33 are formed. For the sake of simplicity, only the periphery of the double structure including one gas introduction pipe 30 is shown. As shown in FIG. 9, the raw material gas g is introduced into the furnace body 10 from the inside of the gas introduction pipe 30, and the cooling gas is introduced between the gas introduction pipe 30 and the outer pipe 33 around the gas introduction pipe 30. . The outer pipe 33 through which the cooling gas passes covers the gas introduction pipe 30 which is the inner pipe, and the heat shield 40 can be prevented from coming into direct contact with the gas introduction pipe 30. That is, heat conduction from the heat shield 40 to the gas introduction pipe 30 can be inhibited.
Further, it is preferable that the cooling gas supplied from the outer tube 33 can be supplied into the furnace body 10. It is possible to prevent the raw material gas g introduced into the furnace body 10 from the gas introduction pipe 30 which is an inner pipe from entering the gas introduction pipe again by the cooling gas. That is, deposits can be effectively prevented from adhering to the inlet of the gas inlet pipe 30.
As the cooling gas supplied from the outer tube 33, for example, H ₂ , Ar, He, or the like can be used. An etching gas such as HCl or an impurity doping gas such as N ₂ can also be added. These gases have no fear of deposits due to decomposition, and even when added to the cooling gas, there is no adverse effect.

As shown in FIG. 9, when supplying the cooling gas from the outer tube 33, it is preferable that the inlet to the furnace body has a tapered shape. Since the gas introduction pipe 30 and the outer pipe 33 have a tapered shape, the cooling gas can flow more smoothly. Thereby, generation | occurrence | production of a turbulent flow can be suppressed and it can suppress more effectively that a deposit arises in the inlet of the gas introduction pipe | tube 30. FIG.
The taper gradient angle of the outer tube 33 is preferably the same as the taper gradient angle of the gas introduction tube 30. If the slope angle of the taper of the outer tube 33 and the gas introduction tube 30 is the same, generation of unnecessary turbulent flow can be suppressed.

Further, the space to which the cooling gas for cooling the heat shield 40 is supplied does not need to be completely separated from the reaction space of the furnace body 10. For example, it may be connected as shown in FIG. Here, the reaction space means a space in which a source gas is supplied in order to perform SiC epitaxial growth.
By forming a through hole in the partition plate 42 between the space to which the cooling gas is supplied and the reaction space, the cooling gas can flow to the reaction space through the through hole. Therefore, it is preferable that a plurality of cooling gas passage through holes 34 are formed in the partition plate 42 around the gas introduction pipe 30. The plurality of through holes 34 for passing a cooling gas are formed in a shower head shape having a large number of small holes, and there is a pressure difference between the space to which the cooling gas is supplied and the reaction space, so that the gas is uniformly distributed from each hole to the reaction space. It is more preferable that the flow structure is adopted.

FIG. 10 is a schematic cross-sectional view of the SiC chemical vapor deposition apparatus when a plurality of cooling gas passage through holes 34 are provided around the gas introduction pipe 30. Not shown.
As shown in FIG. 10, if a through-hole 34 for passing a cooling gas in the form of a shower head is formed around the gas introduction pipe 30, the cooling gas supplied from the cooling gas supply port 50 is transferred to the pre-deposition chamber ( It is supplied to a space 35) in which a cooling gas for cooling the heat shield 40 is supplied. Since the chamber 35 before film formation is filled with the cooling gas, the heat shield 40 can be efficiently cooled.
Further, when the cooling gas is further supplied and the pressure inside the film formation chamber 35 is increased, the cooling gas is supplied into the furnace body 10 through the cooling gas passage through hole 34. That is, the cooling gas is supplied from the periphery of the gas introduction pipe 30 in a shower shape. It is possible to prevent the source gas g from entering the gas introduction pipe 30 again by the cooling gas supplied into the furnace body 10 from the cooling gas passage through hole 34. That is, it is possible to more effectively suppress deposits from adhering to the introduction port 32 of the gas introduction pipe 30.
In addition, in FIG. 10, although the case where the gas introduction pipe | tube 30 was three was illustrated, it is not restricted to the said number, One or more may be sufficient.

  The shape of the cooling gas supply port 50 is not particularly limited as long as the cooling gas can be supplied to the through hole of the heat shield 40. As shown in FIG.1 and FIG.10, one may be sufficient and multiple may be sufficient. Further, the cooling gas supply ports 50 may be provided on the opposite side of the mounting table 20 (Y direction in FIG. 1) from all the heat shields 40 so that the cooling gas passes through all the heat shields 40 from upstream to downstream. preferable.

The cooling gas is not particularly limited as long as it can cool the heat shield 40, but it is preferably one or more gases selected from the group consisting of H ₂ , Ar, and He. These gases can function as an etching gas and a carrier gas in SiC epitaxial growth, and are preferably used even when a reaction space and a space to which a cooling gas for cooling the heat shield 40 is supplied are connected. Can do.
An etching gas such as HCl or an impurity doping gas such as N ₂ can also be added. These gases have no fear of deposits due to decomposition, and even when added to the cooling gas, there is no adverse effect.

  The furnace body 10 has a hollow portion constituting a growth chamber. The source gas is introduced into the furnace body 10 from the gas introduction pipe 30 and is discharged from the gas discharge port 60. In addition, a mounting table 20 is installed in the hollow portion, and a SiC wafer W can be mounted on the mounting table 20 to form a SiC epitaxial film. The furnace body 10 is not particularly limited, but is generally made of a metal such as SUS.

  The mounting table 20 includes a susceptor 21 for mounting the SiC wafer W and a heating mechanism 22 for heating the SiC wafer W mounted on the susceptor 21. The upper surface of the susceptor 21 is a mounting surface for the SiC wafer W, and a space in which the heating mechanism 22 is disposed is formed inside. The susceptor 21 is provided with a tubular support shaft extending downward, and the support shaft can be rotated by being connected to a rotation mechanism (not shown). The heating mechanism 22 is configured by a heater or the like facing the mounting surface of the SiC wafer W, and is installed in the susceptor 21. The heating mechanism 22 is energized from the outside through the inside of the support shaft of the susceptor 21.

  The gas discharge port 60 is disposed below the mounting surface of the SiC wafer W in the mounting table 20 in the furnace body 10, and discharges unreacted gas after passing through the SiC wafer W. Further, vacuum suction can be performed from the gas discharge port 60, and the atmospheric pressure inside the furnace body 10 can be appropriately adjusted.

  In addition to these, a heater (not shown) or the like for heating between the mounting table 20 of the furnace body 10 and the gas introduction pipe 30 may be provided as appropriate. By providing the heater, the temperature distribution in the furnace body 10 can be appropriately adjusted, and gas convection and diffusion can be further suppressed.

  In the above-described embodiment, an SiC chemical vapor deposition apparatus having a vertical furnace structure is illustrated. However, the present invention is not limited to the vertical type, and can also be applied to a SiC chemical vapor deposition apparatus having a horizontal furnace structure as shown in FIG. Although not shown, the present invention can also be applied to a vertical arrangement in which the gas introduction pipe is arranged on the lower side in the vertical direction. In any case, the present invention can prevent the raw gas from overdecomposition, convection, and diffusion. However, convection due to a temperature gradient is often caused by a temperature difference between the upper and lower sides. Therefore, since convection is likely to occur in a vertical furnace structure where a temperature difference is likely to occur between the gas introduction pipe and the mounting table, the present invention is particularly useful in the vertical furnace structure. In addition, it is conceivable that the deposits deposited on the inlet of the gas introduction pipe fall as particles in the lower part due to gravity, and this point is also particularly useful in the vertical furnace structure.

  The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Can be modified or changed.

  The SiC chemical vapor deposition apparatus of the present invention can suppress the decomposition of the reaction gas in the gas introduction pipe, the convection and diffusion of the gas due to the temperature distribution, and can manufacture a SiC epitaxial wafer having a uniform and few defects. . These SiC epitaxial wafers can be used for, for example, power devices, high-frequency devices, high-temperature operation devices, and the like.

100: SiC chemical vapor deposition apparatus, 10: furnace body, 20: mounting table, 21: susceptor, 22: heating mechanism, 30: gas introduction pipe, 31: gas introduction path, 32: gas introduction port, 32a: gas introduction End, 30 s: Si-based source gas introduction pipe, 32 s: introduction port, 30 c: C-based source gas introduction pipe, 32 c: introduction port, 33: outer pipe, 34: through hole for passage of cooling gas, 35: before film formation treatment Chamber: 40: Heat shield, 41: Through hole, 50: Cooling gas supply port, 60: Gas discharge port, g: Source gas, Si: Si source gas, C: C source gas, W: SiC wafer

Claims (11)

A furnace body constituting a growth space;
A mounting table provided in the furnace body for mounting a SiC wafer;
A gas introduction pipe for introducing a raw material gas into the furnace body;
A heat shield disposed around the gas introduction pipe and having a through hole;
A SiC chemical vapor deposition apparatus comprising a cooling gas supply port capable of supplying a cooling gas to the through hole of the heat shield. ^2. The SiC chemical vapor deposition apparatus according to claim 1, wherein a cross-sectional area of the through hole in a direction perpendicular to a gas flow direction is 100 mm ² or less per through hole.   The SiC chemical vapor deposition apparatus according to claim 1, wherein the through hole has an inclination with respect to a thickness direction of the heat shield.   The SiC chemical vapor deposition apparatus according to any one of claims 1 to 3, comprising a plurality of the heat shields.   5. The SiC chemical vapor deposition apparatus according to claim 4, wherein there are a plurality of the heat shields, and through holes of adjacent heat shields do not overlap in a plan view.   The SiC chemical vapor phase according to any one of claims 1 to 5, wherein the heat shield has a circular shape in plan view, and a slit is provided from a central portion to an outer peripheral portion of the circular heat shield. Growth equipment. Wherein as the cooling _gas, H 2, Ar, SiC chemical vapor deposition apparatus according to any one of claims 1-6, characterized by using at least one gas selected from the group consisting of He.   The SiC chemical vapor deposition apparatus according to claim 1, wherein a plurality of the gas introduction pipes are provided. A part of the plurality of gas introduction pipes is a Si-based source gas introduction pipe for introducing a Si-based source gas into the furnace body, and another part is a C-type for introducing a C-type source gas into the furnace body. A source gas introduction pipe,
The SiC chemical vapor deposition apparatus according to any one of claims 1 to 8, wherein the Si-based source gas introduction pipe and the C-type source gas introduction pipe are separated from each other. An outer pipe covering the gas introduction pipe,
The gas introduction pipe and the outer pipe constitute a double pipe structure,
The SiC chemical vapor deposition apparatus according to any one of claims 1 to 9, wherein a cooling gas can be supplied around the gas introduction pipe from between the gas introduction pipe and the outer pipe.   The SiC chemical vapor deposition apparatus according to any one of claims 1 to 10, wherein the gas introduction pipe includes a vertical furnace structure disposed on an upper portion of the mounting table.

Images