CN101924015B - Gas input device and semiconductor processing device - Google Patents
Gas input device and semiconductor processing device Download PDFInfo
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- CN101924015B CN101924015B CN2009100866056A CN200910086605A CN101924015B CN 101924015 B CN101924015 B CN 101924015B CN 2009100866056 A CN2009100866056 A CN 2009100866056A CN 200910086605 A CN200910086605 A CN 200910086605A CN 101924015 B CN101924015 B CN 101924015B
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Abstract
The invention provides a gas input device which is used for inputting process gas to the surface of a semiconductor wafer and comprises a main gas inlet part, a compensation ring and a seal ring, wherein the main gas inlet part faces to the center of the semiconductor wafer basically; the main gas inlet part is basically positioned in the position of an axial line of the compensation ring; the seal ring is hermetically connected with the compensation ring, thereby forming a gas flow distribution cavity between the seal ring and the compensation ring; and the seal ring comprises at least two gas inlets, the compensation ring comprises a gas outlet, and the gas outlet faces to the direction of the axial line of the compensation ring. The gas input device and the semiconductor processing device can improve the uniformity of gas flow distribution on the whole surface of the processed semiconductor wafer.
Description
Technical field
The present invention relates to the semiconductor processing technology field, particularly a kind of gas input device and semiconductor processing equipment.
Background technology
In the manufacture process of integrated circuit, solar cell, usually need to use semiconductor processing equipment the semiconductor wafers such as monocrystalline silicon to be carried out the processing technologys such as thin film deposition, etching.And in semiconductor processing equipment, gas input device normally provides required process gas for the processing of semiconductor wafer, also can be under specific circumstances or required assist gas is provided during plant maintenance.
During processing semiconductor wafer, gas input device is inputted process gas in the reaction chamber of semiconductor processing equipment, and process gas produces ionization and the formation plasma under the exciting of radio-frequency power.Described plasma is comprised of charged electronics and ion, process gas in the reaction chamber is under the bump of electronics, except being transformed into ion, can also absorbed energy and form a large amount of active groups, energy of electromagnetic field coupling by radio-frequency power supply, process gas is excited into plasma state, thereby the semiconductor wafer surface in the reaction chamber is carried out corresponding material etching or deposition, and the product of etching or deposition reaction and residual gas break away from semiconductor wafer surface, and by vacuum system extraction chamber.
Process for semiconductor wafer, the uniformity that whole semiconductor wafer surface is processed is an extremely important index of processing technology, and closely-related with this index be that process gas enters the airflow field that forms at semiconductor wafer surface behind the reaction chamber, this airflow field uniformity is quite important to the result of processing technology.The inhomogeneity factor that affects the semiconductor wafer surface airflow field has a lot, and gas injection apparatus is exactly one of them direct factor, and the structure of air-flow injection device, position and gas transmission mode can have a huge impact airflow field.
Be illustrated in figure 1 as a kind of structure of semiconductor processing equipment commonly used, its characteristics are for being equipped with a multi-zone nozzle 2 at the center at reaction chamber 1 top, this multi-zone nozzle 2 has a plurality of input gas circuits, process gas can a minute multichannel enter into reaction chamber, air-flow ratio between each input gas circuit is regulated, thereby making handled semiconductor wafer 3 airflow on surface more even, is the distribution situation of air-flow in the reaction chamber as shown in phantom in FIG..
Above-mentioned semiconductor processing equipment is taked the mode of reaction chamber 1 top center air inlet, by the exhaust passage 4 that is positioned at semiconductor wafer annular region all around residual gas and reaction product are detached reaction chamber, because the difference of the air flow path length from semiconductor wafer 3 centers to the edge, can cause the airflow field on the wafer surface from the center to the edge, to form the gradient distribution, so that process gas is higher in centre concentration, lower in edge concentration, whole semiconductor wafer 3 top air-flow skewness, impact is to the crudy of semiconductor wafer 3.
Although can improve said flow phenomenon pockety by the air inlet ratio that changes between the multi-zone nozzle 2 different input gas circuits, but also only can reduce gradient in to a certain degree distributes, and along with the development of technology, the size of semiconductor wafer progressively increases, and the difference that the air-flow of its centerand edge distributes will further increase.
Summary of the invention
The problem that the present invention solves provides a kind of gas input device and semiconductor processing equipment, can improve the uniformity that the whole surface of handled semiconductor wafer air-flow distributes.
For addressing the above problem, the invention provides a kind of gas input device, be used for comprising to semiconductor wafer surface input process gas:
Main intake section, basic center towards described semiconductor wafer;
Compensated loop, described main intake section is positioned at the axial location of described compensated loop substantially;
Sealing ring is tightly connected with described compensated loop, thereby is formed with gas flow distribution cavity between described sealing ring and compensated loop;
Described sealing ring has at least two air inlets, and described compensated loop has the gas outlet, and described gas outlet is towards the axis direction of described compensated loop.
Described at least two air inlets are arranged symmetrically with at described sealing ring.
Described gas outlet is a series of through holes, and described a series of through holes are evenly arranged around the axis of compensated loop.
The axis of described through hole is parallel with semiconductor wafer surface or crossing.
In described a series of through hole, larger the closer to its aperture of through hole of semiconductor wafer.
The inwall of described compensated loop is the toroidal towards semiconductor wafer.
Described compensated loop is annular, and described sealing ring is positioned at the cylindrical of compensated loop, and then described gas flow distribution cavity also is annular.
Described compensated loop and sealing ring are metal material, and then the contact-making surface of this compensated loop and sealing ring is provided with electric-conductor and/or seal.
Described gas input device also comprises the control gas circuit, and described control gas circuit comprises main gas circuit and compensation gas circuit, wherein,
Described main gas circuit is communicated with described main intake section, is used for to main intake section air feed;
Described compensation gas circuit is communicated with at least two air inlets of described sealing ring, is used for to described compensated loop air feed.
Described compensation gas circuit comprises at least two branch roads, and every branch road is provided with switching device and current-limiting apparatus.
The present invention also provides a kind of semiconductor processing equipment, comprise: reaction chamber, be positioned at reaction chamber one side, be used for the fixedly wafer support of semiconductor wafer, be positioned at gas input device opposite side, relative with described wafer support of reaction chamber, described gas input device comprises:
Main intake section, basic center towards described semiconductor wafer;
Compensated loop, described main intake section is positioned at the axial location of described compensated loop substantially;
Sealing ring is tightly connected with described compensated loop, thereby is formed with gas flow distribution cavity between described sealing ring and compensated loop;
Described sealing ring has at least two air inlets, and described compensated loop has the gas outlet, and described gas outlet is towards the axis direction of described compensated loop.
Described semiconductor processing equipment also comprises the exhaust passage, is positioned at around the described wafer support.
Technique scheme has the following advantages:
Described gas input device is for the input of the semiconductor wafer surface in reaction chamber process gas, on the one hand, by basic center main intake section towards semiconductor wafer, process gas is input to process area on the wafer surface in the mode of central air induction, and on the other hand, process gas enters gas flow distribution cavity between described sealing ring and the compensated loop by at least two air inlets of described sealing ring, again by with compensated loop that described gas flow distribution cavity is communicated with on the gas outlet input to process area on the wafer surface, because main intake section is positioned at the axial location of described compensated loop substantially, and described gas outlet is towards the axis direction of described compensated loop, that is to say, by the air-flow of compensated loop input be positioned at intake section input air-flow around, so, compensated the air-flow of wafer surface fringe region from the process gas of compensated loop input, the distribution gradient of airflow field between wafer surface top edge and the center can be reduced, thereby the uniformity that the whole surface of handled semiconductor wafer air-flow distributes can be improved.
Described semiconductor processing equipment, owing to adopt the above-mentioned gas input unit to reaction chamber delivery technology gas, therefore, the distribution gradient of airflow field between wafer surface top edge and the center can be reduced, and then the uniformity that the whole surface of handled semiconductor wafer air-flow distributes can be improved.
And described gas input device only increases compensated loop and sealing ring around traditional central main intake section, so structure is relatively simple, and manufacturing cost is lower.In addition, by the proportioning that the control gas circuit is distributed main intake section and compensated loop input air-flow, be conducive to further improve the uniformity of air-flow.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is a kind of structural representation of semiconductor processing equipment commonly used;
Fig. 2 is the perspective view of semiconductor processing equipment among the embodiment one;
Fig. 3 is along the cutaway view of A-A direction among Fig. 2;
Fig. 4 is the cutaway view of the compensated loop among Fig. 3;
Fig. 5 is the partial enlarged drawing of the compensated loop among Fig. 4;
Fig. 6 is the partial enlarged drawing of another compensated loop among the embodiment one;
Fig. 7 is the vertical view of semiconductor processing equipment among Fig. 2;
Fig. 8 is the principle schematic of the control gas circuit of gas input device among the embodiment two.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of indication device structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Be outstanding characteristics of the present invention, do not provide in the accompanying drawing and the inevitable directly related part of inventive point of the present invention, for example, the concrete structure of radio-frequency power supply, power matching apparatus, electrostatic chuck.
Development along with semicon industries such as integrated circuit, solar cells, size as the semiconductor wafer of substrate progressively increases, critical size constantly reduces, these cause the volume of the reaction chamber of semiconductor processing equipment also to increase accordingly, airflow homogeneity to wafer surface requires also more and more higher, need to be in a larger space, on a larger surface, obtaining more uniformly, air-flow distributes.
The inventor studies discovery, traditional semiconductor processing equipment, although the air inlet ratio that changes between the different input of the multi-zone nozzle gas circuit is improved semiconductor wafer surface air-flow phenomenon pockety, but also only can reduce gradient in to a certain degree distributes, essential reason is, the Inlet Position of reaction chamber is single, and air-flow is to be pulled out reaction chamber through the annular region around the handled semiconductor wafer, therefore cause near the semiconductor wafer center gas always more to be difficult to detach near the edge, thereby cause the difference of the institute's semiconductor wafer centerand edge air-flow of processing distribution.
Based on this, the present invention proposes a kind of gas input device for semiconductor processing equipment, increasing the edge air inlet on the basis of traditional air feeding in center compensates with the edge air-flow, thereby reduce the semiconductor wafer surface center to the air-flow distribution gradient at edge, and this gas input device is simple in structure, and control flexibly.
Describe described gas input device in detail and have the specific embodiment of the semiconductor processing equipment of this gas input device below in conjunction with accompanying drawing.
Embodiment one
Fig. 2 is the perspective view of semiconductor processing equipment in the present embodiment, and Fig. 3 is along the cutaway view of A-A direction among Fig. 2.
As shown in the figure, semiconductor processing equipment comprises: reaction chamber 10, be positioned at the wafer support 11 of reaction chamber 10 inside, and, be positioned at gas input device 12 reaction chamber 10 1 sides, relative with described wafer support 11.
Wherein, the reaction chamber inner space between wafer support 11 and the gas input device 12 consists of process area B.Described wafer support 11 is electrostatic chuck for example, is used for fixing semiconductor wafer 3.Reaction chamber 10 inside also have cavity inner lining 13, and the top of reaction chamber 10 is medium window 101, and this medium window 101 is made of pottery or quartz material usually.The top of medium window 101 is equipped with the coil (not shown) that connects radio-frequency power supply, it is coupled to described process area B with energy by medium window, process gas wherein is excited into plasma, thereby the semiconductor wafer 3 on the wafer support 11 is processed, and the residual gas after the processing or reaction product detach reaction chamber 10 by exhaust passage 102.Described exhaust passage 102 be positioned at wafer support 11 around.
Described gas input device 12 is used for comprising to semiconductor wafer 3 lip-deep working region B input process gass:
Compensated loop 122, described main intake section 121 is positioned at the axis C-C position of described compensated loop 122 substantially;
Wherein, this main intake section 121 is preferably mounted at the center of described medium window 101, and such as being gas distribution plate, multi-zone nozzle etc., process gas is ejected into the process area B from the mode of this main intake section 121 with central air induction.
Described compensated loop 122 has gas outlet 126, and described gas outlet 126 is towards the direction of the axis of described compensated loop 122, and the process gas that is used for flowing through gas flow distribution cavity 124 is ejected into process area B in the mode of edge air inlet.
Described gas input device is for the semiconductor wafer 3 surface input process gass in reaction chamber, on the one hand, by basic center main intake section 121 towards semiconductor wafer 3, process gas D is input near the wafer surface center process area in the mode of central air induction, and on the other hand, process gas E enters gas flow distribution cavity 124 between described sealing ring 123 and the compensated loop 122 by at least two air inlets 125 of described sealing ring 123, again by with compensated loop 122 that described gas flow distribution cavity 124 is communicated with on gas outlet 126 input near the wafer surface edge process area, because main intake section 121 is positioned at the axial location of described compensated loop 122 substantially, and described gas outlet 126 is towards the axis direction of described compensated loop 122, that is to say, by the air-flow E of compensated loop 122 input be positioned at main intake section 121 input air-flow D around, so, compensated the air-flow of wafer surface fringe region from the process gas E of compensated loop 122 inputs, can reduce the distribution gradient of airflow field between wafer surface top edge and the center, referring to the distribution situation of air-flow in the reaction chamber shown in the dotted line among the figure, thereby can improve the uniformity that the whole surface of handled semiconductor wafer air-flow distributes.
Fig. 4 is the cutaway view of the compensated loop 122 among Fig. 3, as shown in the figure, preferred, the inwall 122a of described compensated loop 122 is the toroidal towards semiconductor wafer, described gas outlet 126 is a series of through holes 126, and described a series of through holes 126 are evenly arranged around the axis C-C of compensated loop 122.The inwall 122a of this compensated loop 122 is horn mouth, the radius of close medium window 101 1 sides of this horn mouth is less than the radius (seeing Fig. 3) near semiconductor wafer 3 one sides, described a series of through hole 126 is extended to outer wall 122b and is run through compensated loop 122 by inwall 122a, so, a series of through holes 126 distribute along inwall 122a divergence expression, can export at many levels gas in the certain annulus width range in the horizontal plane that is parallel to semiconductor wafer 3, thereby near the regional compensation process gas to semiconductor wafer 3 edges obtains better airflow homogeneity.
Fig. 5 is the partial enlarged drawing of the compensated loop 122 among Fig. 4, preferably, the axis of through hole 126 is parallel with described semiconductor wafer surface, through hole 126 its apertures the closer to semiconductor wafer are larger, so that semiconductor wafer edge region territory process gas compensation rate from inside to outside increases gradually, thereby so that the air-flow that compensates the closer to fringe region is larger, further improve compensation effect, improve semiconductor wafer surface airflow field distribution gradient.In addition, as shown in Figure 6, the axis of described a series of through holes 126 also can have a certain degree with semiconductor wafer surface is crossing, for example 0 °-90 °, the aperture of through hole 126 also can all equate, and is perhaps, less the closer to through hole 126 its apertures of semiconductor wafer.
Fig. 7 is the vertical view (wherein chain-dotted line represents the structure of having an X-rayed) of semiconductor processing equipment among Fig. 2, described compensated loop is preferably annular, its radius is greater than medium window 101, described sealing ring 123 is positioned at the excircle of compensated loop, consist of described gas flow distribution cavity between the outer wall 122b of compensated loop and the inwall 123a of sealing ring 123, then described gas flow distribution cavity also is annular, and the outer wall 123b of sealing ring 123 is square substantially." ring " described in the present embodiment is not limited to annulus, can also be straight-flanked ring, triangle ring, vesica piscis etc., the form fit of shape and handled semiconductor wafer gets final product, for example, handled semiconductor wafer is square in solar cell fabrication process, and then described compensated loop, gas flow distribution cavity, sealing ring (inwall) are Q-RING.
In other embodiments of the invention, the inwall of described compensated loop also can be for cylindrical, that is to say, all equate to the radius near semiconductor wafer one side from the radius near medium window one side, then the end of a series of through holes equates all that to the distance of compensated loop axis this structure is with respect to the easier manufacturing of bell-mouthed structure.
In the present embodiment, as shown in Figure 3, reaction chamber 10, cavity inner lining 13, compensated loop 122, sealing ring 123 preferably are metal material.Between reaction chamber 10 and the cavity inner lining 13, between cavity inner lining 13 and the compensated loop 122 and the contact-making surface between compensated loop 122 and the sealing ring 123 have respectively seal 127 and realize sealing, also have simultaneously electric-conductor 128 and realize conducting each other, can certainly select as required other non-conducting materials, not need between them like that to conduct.
Gas input device of the present invention can also comprise the control gas circuit, is described with reference to the accompanying drawings in following examples.
Embodiment two
Fig. 8 is the principle schematic of the control gas circuit of gas input device in the present embodiment, and gas input device and semiconductor processing equipment and embodiment one are similar, do not repeat them here.
As shown in the figure, described control gas circuit 20 comprises: main gas circuit 21 and compensation gas circuit 22, wherein,
Described main gas circuit 21 is communicated with described main intake section 121, is used for to main intake section 121 air feed;
Described compensation gas circuit 22 is communicated with at least two air inlets of described sealing ring 123, is used for to described compensated loop 122 air feed.Described compensation gas circuit 22 comprises at least two branch roads 221, wherein is provided with successively switching device 222 and current-limiting apparatus 223 along airflow direction on every branch road 221.
Described switching device for example is pneumatic stopping valve, is used for the air-flow break-make of control place branch road, and described current-limiting apparatus for example is flow restricter, is used for the uninterrupted of restriction branch road air-flow.
The specification of every branch road flow restricter is different, and the quantity of branch road can set up on their own according to the function needs, merges into a gas circuit through flow restricter post-compensation gas circuit and enters reaction chamber through compensated loop.
During the semiconductor processing equipment normal operation, can compensation gas circuit flow be set according to the required process gas flow of actual process process, when the whole flow of process gas was large generally speaking, the gas flow that the compensation gas circuit flows through was also large, but is not limited only to this situation.
The branch road of this compensation gas circuit can work alone by wall scroll, also can many work in combination.As shown in Figure 7, in the situation that three branch road 221A, 221B, 221C are arranged, the compensation gas circuit can realize the current limliting of 7 kinds of situations.Air-flow ratio such as three branch road 221A, 221B, 221C was respectively 1: 2: 5, if compensate the words that the total negotiability of gas circuit is set to 8 (unit for example is SCCM), the gas that passes through when then singly opening respectively 221A, 221B, 221C three tunnel is respectively 1/8 of the total negotiability of compensation gas circuit, 1/4,5/8; If open two branch roads, i.e. 221A and 221B, 221B and 221C, 221A and 221C, then circulated gases is the total negotiability 3/8,7/8,3/4 of compensation gas circuit; If entirely open then reached the total negotiability of compensation gas circuit.In addition, this compensation gas circuit cooperates main gas circuit to work together, also can work independently under specific circumstances, in some specific occasions, main gas circuit can be closed, and the compensation gas circuit works independently.For example when the device free state, can the flow of specific gas with less be passed into by certain bar branch road, thereby make equipment maintain a stable state.
Adopt above-mentioned control gas circuit to control flexibly by the process gas flow that enters gas input device, be convenient to distribute the proportioning of main intake section and compensated loop input air-flow, be conducive to improve the uniformity of air-flow.
Described gas input device can be used for various semiconductor processing equipments based on gas-phase reaction, carries gas in reaction chamber, and described semiconductor processing equipment is such as being plasma etching equipment, chemical vapor depsotition equipment etc.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (12)
1. a gas input device is used for it is characterized in that to semiconductor wafer surface input process gas, comprising:
Main intake section is towards the center of described semiconductor wafer;
Compensated loop, described main intake section is positioned at the axial location of described compensated loop;
Sealing ring is tightly connected with described compensated loop, thereby is formed with gas flow distribution cavity between described sealing ring and compensated loop;
Described sealing ring has at least two air inlets, described compensated loop has the gas outlet, described gas outlet is towards the axis direction of described compensated loop, the process gas that is used for flowing through described gas flow distribution cavity is ejected into process area in the mode of edge air inlet, by the air-flow of described compensated loop input be positioned at described main intake section input air-flow around.
2. gas input device according to claim 1 is characterized in that, described at least two air inlets are arranged symmetrically with at described sealing ring.
3. gas input device according to claim 1 is characterized in that, described gas outlet is a series of through holes, and described a series of through holes are evenly arranged around the axis of compensated loop.
4. gas input device according to claim 3 is characterized in that, the axis of described through hole is parallel with semiconductor wafer surface or crossing.
5. gas input device according to claim 3 is characterized in that, and is in described a series of through holes, larger the closer to its aperture of through hole of semiconductor wafer.
6. gas input device according to claim 1 is characterized in that, the inwall of described compensated loop is the toroidal towards semiconductor wafer.
7. gas input device according to claim 1 is characterized in that, described compensated loop is annular, and described sealing ring is positioned at the cylindrical of compensated loop, and then described gas flow distribution cavity also is annular.
8. gas input device according to claim 1 is characterized in that, described compensated loop and sealing ring are metal material, and then the contact-making surface of this compensated loop and sealing ring is provided with electric-conductor and/or seal.
9. gas input device according to claim 1 is characterized in that, described gas input device also comprises the control gas circuit, and described control gas circuit comprises main gas circuit and compensation gas circuit, wherein,
Described main gas circuit is communicated with described main intake section, is used for to main intake section air feed;
Described compensation gas circuit is communicated with at least two air inlets of described sealing ring, is used for to described compensated loop air feed.
10. gas input device according to claim 9 is characterized in that, described compensation gas circuit comprises at least two branch roads, and every branch road is provided with switching device and current-limiting apparatus.
11. semiconductor processing equipment, comprise: reaction chamber, be positioned at reaction chamber one side, be used for the fixedly wafer support of semiconductor wafer, be positioned at gas input device opposite side, relative with described wafer support of reaction chamber, it is characterized in that described gas input device comprises:
Main intake section is towards the center of described semiconductor wafer;
Compensated loop, described main intake section is positioned at the axial location of described compensated loop;
Sealing ring is tightly connected with described compensated loop, thereby is formed with gas flow distribution cavity between described sealing ring and compensated loop;
Described sealing ring has at least two air inlets, described compensated loop has the gas outlet, described gas outlet is towards the axis direction of described compensated loop, the process gas that is used for flowing through described gas flow distribution cavity is ejected into process area in the mode of edge air inlet, by the air-flow of described compensated loop input be positioned at described main intake section input air-flow around.
12. semiconductor processing equipment according to claim 11 is characterized in that, also comprises the exhaust passage, is positioned at around the described wafer support.
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| CN102560429B (en) * | 2012-03-13 | 2014-12-03 | 中微半导体设备(上海)有限公司 | Metal organic vapor phase deposition device |
| US9741575B2 (en) * | 2014-03-10 | 2017-08-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | CVD apparatus with gas delivery ring |
| CN105590880B (en) * | 2014-11-18 | 2019-01-18 | 北京北方华创微电子装备有限公司 | reaction chamber |
| CN108172531B (en) * | 2017-12-20 | 2021-01-15 | 武汉华星光电半导体显示技术有限公司 | Etching equipment |
| CN110854047B (en) * | 2019-11-27 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN112359343B (en) * | 2020-09-29 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Gas inlet device of semiconductor process equipment and semiconductor process equipment |
| CN112331595B (en) * | 2020-11-30 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007633A (en) * | 1997-04-09 | 1999-12-28 | Tokyo Electron Limited | Single-substrate-processing apparatus in semiconductor processing system |
| CN101207034A (en) * | 2006-12-20 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber top cover and reaction chamber containing said top cover |
-
2009
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007633A (en) * | 1997-04-09 | 1999-12-28 | Tokyo Electron Limited | Single-substrate-processing apparatus in semiconductor processing system |
| CN101207034A (en) * | 2006-12-20 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber top cover and reaction chamber containing said top cover |
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|---|---|---|---|
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |