CN101515498A - Inductance coupling coil and plasma processing device adopting same - Google Patents
Inductance coupling coil and plasma processing device adopting same Download PDFInfo
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- CN101515498A CN101515498A CNA2008100578302A CN200810057830A CN101515498A CN 101515498 A CN101515498 A CN 101515498A CN A2008100578302 A CNA2008100578302 A CN A2008100578302A CN 200810057830 A CN200810057830 A CN 200810057830A CN 101515498 A CN101515498 A CN 101515498A
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Abstract
The invention discloses an inductance coupling coil, which comprises at least two groups of mutually nested coil windings with different diameters, wherein the upper surfaces of at least two groups of the coil windings in the coil windings are at planes with different heights for the convenience of obtaining plasmas which are distributed evenly. Besides, the invention also discloses a plasma processing device comprising a reaction chamber; a dielectric window is arranged on the upper part of the reaction chamber, and the inductance coupling coil is arranged above the dielectric window; and the inductance coupling coil is connected with a radio frequency power supply through a radio frequency matcher so as to obtain the plasmas distributed evenly in the reaction chamber. The inductance coupling coil and the plasma processing device can obtain the plasmas which are distributed evenly, and can obtain an excellent and even processing/handling result.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of inductance-coupled coil.In addition, the invention still further relates to a kind of plasma processing apparatus that adopts this inductance-coupled coil.
Background technology
Along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the processing/disposal ability of semiconductor device constantly improves in this enterprise that will seek survival the product integrated circuit.At present, in the processing/process field of semiconductor device, usually need to use plasma etching technology and plasma technique, and these technology usually all will be by means of realizing such as the plasma processing apparatus of plasma etching machine etc.
Therefore, in the processing/process field of semiconductor device, be applicable to that the service behaviour of the plasma processing apparatus of etching, deposition or other technologies just seems most important.Especially, the ability to work on big substrate.Only possess good working performance, could improve productive rate, and carry out the ability that is used to make height integrated device technology.That is to say, need plasma processing apparatus keeping under the situation of higher plasma density, have the processing of semiconductor device such as wafer comparatively uniformly.
At present, already used plasma processing apparatus is of a great variety in the processing/process field of semiconductor device, for example have, the plasma processing apparatus of the plasma processing apparatus of capacitance coupling plasma (CCP) type, inductively coupled plasma (ICP) type, and the plasma processing apparatus of Ecr plasma (ECR) type, or the like.
Wherein, the plasma processing apparatus of capacitance coupling plasma type produces plasma by means of capacity coupled mode, and it is simple in structure, and cost is low.Yet in actual applications, the plasma density that such plasma processing apparatus produced is lower, is difficult to satisfy the demand of actual process process ionic medium body etch rate and productive rate.
As for the plasma processing apparatus of Ecr plasma type, it can obtain the higher plasma of density under lower operating air pressure.Yet in actual applications, such plasma processing apparatus need be introduced external magnetic field, also need to dispose devices such as microwave tube, thereby cost is higher relatively.
Given this, the plasma processing apparatus of inductively coupled plasma type is widely adopted at present.This mode can obtain the higher plasma of density under low operating air pressure, and it is simple in structure, and cost is low.Simultaneously, such plasma processing apparatus can be controlled with chip bench radio frequency source (particle energy on the wafer is incided in its decision) the radio frequency source (density of its decision plasma) that produces plasma independently.Thereby such plasma processing apparatus is very suitable for materials such as metal and semiconductor are carried out processing/processing such as etching.
Particularly, the size of wafer increases to 300mm by 200mm gradually at present, and for the large-sized wafer of 300mm, the plasma processing apparatus of inductively coupled plasma type can high density because of it and high uniformity ground produce plasma, and structure is simple relatively, and is considered to best plasma processing apparatus.
See also Fig. 1, common inductance coupling plasma processing device in a kind of prior art shown in it.This device generally includes reaction chamber 4, medium window 17, electrostatic chuck 6 and inductance-coupled coil 3.Wherein, electrostatic chuck 6 is positioned at reaction chamber 4, and links to each other with radio frequency source 11 via adaptation 10.This electrostatic chuck 6 is provided with the wafer 5 of processed processing.Be provided with medium window 17 above reaction chamber 4, inductance-coupled coil 3 just places on this medium window 17, and links to each other with radio frequency source 1 via adaptation 2.
In semiconductor device fabrication/processing procedure, inductance-coupled coil 3 ionization that the process gas that enters reaction chamber 4 is positioned at the top form plasma, operate such as processing/processings of etching etc. so that wafer 5 materials such as semiconductor device surface such as grade are carried out.Simultaneously, by means of molecular pump (figure does not show) reacted gas is extracted out from reaction chamber 4.
In above-mentioned course of reaction, make gas produce ionization and the radio-frequency power that forms plasma comes from inductance-coupled coil 3.As previously mentioned, this coil 3 links to each other with radio frequency source 1 via adaptation 2, and radio frequency source 1 is used to provide radio-frequency current.Along with radio-frequency current flows into coil 3, produce magnetic field around coil 3.Owing to become when the magnetic field that is produced is, so in reaction chamber 4, can generate electric field.Simultaneously, the process gas in the reaction chamber 4 is ionized because of bumping with the electronics that quickens by induction field, like this, just can produce plasma in reaction chamber 4.Physical-chemical reaction takes place in the surface of plasma that this mode produced and wafer 5, wafer 5 is carried out the processing/processing such as etching etc.
In addition, electrostatic chuck 6 via adaptation 10 be used to provide the radio frequency source 11 of bias voltage to link to each other so that increase the energy that plasma and wafer 5 collide.
See also Fig. 2, wherein show the structure of the normal inductance-coupled coil that adopts in the existing inductance coupling plasma processing device.As shown in the figure, existing inductance-coupled coil generally includes the nemaline single coil of snail.
Although the above-mentioned inductance-coupled coil that is the snail shape that prior art provides is widely used in the inductance coupling plasma processing device, and but it can make this plasma processing unit have high density and high uniformity ground with respect to the plasma processing apparatus of other types to produce plasma and simple in structure, characteristics such as cost is lower, yet in actual applications, there are following problem in the inductance-coupled coil of this structure and the plasma processing apparatus of using this coil:
At first, when radio-frequency current flows through above-mentioned inductance-coupled coil, the induced field that becomes when in reaction chamber, producing, this the time induced field that becomes produce the induction field of hoop again, yet the inductance-coupled coil of above-mentioned this snail shape will cause the electromagnetic field skewness that produces and radio-frequency power skewness below medium window in reaction chamber.Like this, produce plasma because of electronics need obtain energy under the effect of induction field with the neutral particle collision, so this causes the plasma distribution of generation inhomogeneous.Although plasma can be from the diffusion into the surface of the generation district below the medium window to workpiece such as processed wafers, but in the actual process scope, only be difficult to make above-mentioned plasma to arrive the surface of processed workpiece equably by diffusion, therefore, this will cause the workpiece result inhomogeneous.
Secondly, when the size of processed workpiece increases to 300mm and even when bigger, the size of reaction chamber also correspondingly increases, like this from 200mm, for guaranteeing to obtain to satisfy the large-area high-density plasma of technological requirement, just need to increase the length and the number of turns of coil.Yet, increasing loop length will cause the voltage on the coil to increase, and the voltage increase on the coil will cause the part radio-frequency power to be coupled in the plasma by capacitive, that is to say that the capacitive coupling of the radio-frequency power from the coil to the plasma will increase along with the increase of the voltage on the coil.Yet the capacitive coupling not only can reduce the coupling efficiency of radio-frequency power, but also increases ion kinetic energy, makes to be difficult to ion kinetic energy is accurately controlled, and then is difficult to technological parameters such as sputter rate and etch rate are accurately controlled.In addition, increasing loop length will cause coil inductance also to increase.Yet inductance is too high will to be difficult to realize conjugate impedance match to coil, thereby be difficult to obtain the required large tracts of land of semiconductor machining, high density and equally distributed plasma, and then influence the uniformity of workpiece processing such as wafer.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of inductance-coupled coil with stereochemical structure, can obtain distribution plasma comparatively uniformly by means of this inductance-coupled coil, can obtain the processing of good homogeneous simultaneously.
In addition, the present invention also provides a kind of plasma processing apparatus that adopts this inductance-coupled coil, its plasma comparatively uniformly that can obtain to distribute, and the while can obtain the processing of good homogeneous.
For this reason, the invention provides a kind of inductance-coupled coil, it comprises the different and mutually nested coil windings of at least two group diameters, the upper surface of at least two group coil windings in the described coil windings is in the plane of differing heights, so that below the respective media window, obtain induction field comparatively uniformly, and then the plasma comparatively uniformly that obtains to distribute.
Wherein, described each group coil windings comprises at least two mutually nested and be symmetrically distributed paths.
Wherein, described path is a planar structure.
Wherein, described path is the shape of snail line, and described helix is the form of spiral of Archimedes or involute or vortex-like line.
Wherein, described path is concentrically ringed shape roughly, and each circle in the described concentric circles comprises a plurality of arc arcs, and at least one coupling part of extending and connecting between arc, and described arc extends along described concentric circles respectively.
Wherein, described path is a stereochemical structure.
Wherein, it is three-dimensional spiral-shaped that described path is, and identical or diameter is gradually little or diameter is gradually big along the diameter of its helix of ascent direction.
Wherein, described each group coil windings comprise three mutually nested and be symmetrically distributed path.
Wherein, the quantity of the coil windings that described diameter is different and mutually nested is 3, and the height of middle winding upper surface is higher than the height of inner ring winding and outmost turns winding upper surface.
Wherein, the diameter of described inner ring winding is less than the diameter of processed wafer, described in the middle of the diameter of winding be substantially equal to the diameter of processed wafer, the diameter of described outmost turns winding is greater than the diameter of processed wafer and less than the size of medium window.
Wherein, each path in described each group coil windings is connected in parallel.
Wherein, described a plurality of coil windings connected mode each other is series system, parallel way and series-parallel connection mode.
As another technical scheme, the present invention also provides a kind of plasma processing apparatus.This device comprises reaction chamber, and the top of described reative cell is provided with dielectric window.Wherein, above described dielectric window, be provided with above-mentioned inductance-coupled coil provided by the invention, described inductance-coupled coil is connected with radio-frequency power supply by radio frequency adaptation, in order to below medium window, obtaining uniform induction field, and then in reaction chamber, obtain the plasma that is evenly distributed.
With respect to prior art, the present invention has following beneficial effect:
At first, because the upper surface of at least two group coil windings in the inductance-coupled coil provided by the invention is in the plane of differing heights, and the residing height of each winding upper surface requires to preestablish according to actual process, therefore, the inductance-coupled coil of this stereochemical structure can obtain induction field comparatively uniformly below the respective media window, thereby it is more even that the radio-frequency power that is coupled to the medium window below is distributed, and then produce more uniform plasma.Like this,, can be at an easy rate above processed wafer, obtain the plasma that is evenly distributed, thereby obtain the processing of good homogeneous by plasma diffusion.
Secondly, in inductance-coupled coil provided by the invention, each group coil windings is connected in parallel and nested the forming of symmetry by two identical spiral yarn shaped windings (or the concentric circles that is made of a plurality of arc branch) at least.Adopt the coil of this nested parallel-connection structure, not only can in reaction chamber, produce distribute relative uniform electric magnetic field and the radio-frequency power of sedimentary facies, and then produce more uniform plasma being evenly distributed; And adopt the coil of this nested parallel-connection structure, can also reduce the inductance of inductance-coupled coil, reduce the capacitive coupling of radio-frequency power to plasma, improve the coupling efficiency of radio-frequency power, and can obtain accurate control to etch rate, like this, even increase the size of wafer, also can easily above this wafer, obtain large-area plasma, and the uniformity of improving the distribution of large tracts of land technology ionic medium body, can also accurately control etch rate simultaneously, thereby the physical-chemical reaction speed difference that wafer surface is taken place is less, with the uniformity of raising etch rate and the processing/processing quality of wafer.
In addition, because inductance-coupled coil provided by the invention has above-mentioned beneficial effect, therefore the plasma processing apparatus that comprises this inductance-coupled coil has following beneficial effect too: promptly, the plasma comparatively uniformly that can obtain to distribute can obtain good, uniform processing/result etc. simultaneously.
Description of drawings
Fig. 1 is the structural representation of plasma processing apparatus of the prior art;
Fig. 2 is the structural representation of inductance-coupled coil of the prior art;
The structural representation of the inductance-coupled coil that Fig. 3 provides for first embodiment of the invention;
The structural representation of the inductance-coupled coil that Fig. 4 provides for second embodiment of the invention;
The structural representation of the inductance-coupled coil that Fig. 5 provides for third embodiment of the invention;
The structural representation of the inductance-coupled coil that Fig. 6 provides for fourth embodiment of the invention; And
Fig. 7 is the structural representation of plasma processing apparatus provided by the invention.
Embodiment
For making those skilled in the art person understand technical scheme of the present invention better, describe the present invention below in conjunction with accompanying drawing.
See also Fig. 3, the inductance-coupled coil that first embodiment of the invention provides comprises three groups of coil windings, that is, inner ring winding 7, outmost turns winding 9 and boundary are in the middle winding 8 between the two.Wherein, each group in these three groups of windings is planar structure, and each group winding comprises two mutually nested spiral coil branches.
In actual applications, these three groups of coil windings are set in place usually on the medium window of reaction chamber top, yet they are not positioned at same plane, can set the distance of these three groups of windings apart from medium window according to the actual process needs.Particularly, the upper surface of inner ring winding 7 is roughly the same apart from the distance of medium window with the upper surface of outmost turns winding 9 apart from the distance of medium window, and in other words, the upper surface of inner ring winding 7 and the upper surface of outmost turns winding 9 roughly are positioned at same plane; The upper surface of middle winding 8 is relatively large apart from the distance of medium window, in other words, the upper surface of middle winding 8 apart from the distance of medium window greater than the upper surface of inner ring winding 7 or outmost turns winding 9 distance apart from medium window.
Like this, the inductance-coupled coil with said structure just can remedy in the prior art induction field in the uneven defective of medium window place intensity distributions.Particularly, in the actual process process, can be according to the actual process situation, be provided with differently to the distance of medium window three groups of windings of inductance-coupled coil provided by the invention, so that the induction field that inner ring winding 7 and outmost turns winding 9 are produced is roughly balanced in the intensity at medium window place with the induction field that is produced by middle winding 8 in the intensity at medium window place, and then make the radio-frequency power that is coupled to the medium window below distribute more evenly, thereby produce more uniform plasma.Like this,, just can be at an easy rate above wafer, obtain plasma comparatively uniformly, obtain bigger process window simultaneously by the diffusion of plasma, and the final processing that obtains semiconductor device such as wafer comparatively uniformly.
See also Fig. 4, be similar to first embodiment, the inductance-coupled coil that second embodiment of the invention provides comprises three groups of coil windings equally, promptly, inner ring winding 7, outmost turns winding 9 and boundary are in the middle winding 8 between the two, and each group in these three groups of windings is planar structure.And the mounting means of the inductance-coupled coil that present embodiment provides and operation principle are all similar with first embodiment, do not repeat them here.
Difference as for second embodiment and first embodiment mainly shows as: each the group winding among first embodiment comprises two mutually nested spiral coil branches; And each the group winding among second embodiment comprises three mutually nested spiral coil branches.
See also Fig. 5, the inductance-coupled coil that third embodiment of the invention provides comprises three groups of coil windings, that is, inner ring winding 7, outmost turns winding 9 and boundary are in the middle winding 8 between the two.Wherein, each group in these three groups of windings is stereochemical structure, and, the height of inner ring winding 7 and outmost turns winding 9 about equally, the height of middle winding 8 then is higher than the height of inner ring winding 7 and outmost turns winding 9.And each the group winding in the present embodiment comprises two mutually nested and paths of lift structure in the shape of a spiral, and the diameter of each path is consistent from top to bottom.
In actual applications, three groups of coil windings in the present embodiment are arranged on the medium window of reaction chamber top.Because each winding is lift structure and have aforesaid height situation in the shape of a spiral, therefore, the distance of the upper surface of inner ring winding 7 to the upper surface of the distance of medium window and outmost turns winding 9 to medium window about equally, and the upper surface of middle winding 8 to the distance of medium window greater than the upper surface of inner ring winding 7 or outmost turns winding 9 distance to medium window.
See also Fig. 6, the inductance-coupled coil that fourth embodiment of the invention provides comprises three groups of coil windings, that is, inner ring winding 7, outmost turns winding 9 and boundary are in the middle winding 8 between the two.Wherein, inner ring winding 7 and outmost turns winding 9 in these three groups of windings are planar structure, and each group winding comprises two mutually nested spiral coil branches; And middle winding 8 is a stereochemical structure, and it comprises two mutually nested and paths of lift structure in the shape of a spiral, and the diameter of this path is consistent from top to bottom.
In actual applications, three groups of coil windings in the present embodiment are arranged on the medium window of reaction chamber top.Because each winding has aforesaid height situation, therefore, the distance of the upper surface of inner ring winding 7 to the upper surface of the distance of medium window and outmost turns winding 9 to medium window about equally, and the upper surface of middle winding 8 to the distance of medium window greater than the upper surface of inner ring winding 7 or outmost turns winding 9 distance to medium window.
It is pointed out that in actual applications the radius of inner ring winding 7 is less than the radius of processed wafer; The radius of middle winding 8 and the radius of processed wafer are basic identical; The radius of outmost turns winding 9 is greater than the radius of processed wafer, but less than the size of medium window.
Further it is to be noted, although each path of the inductance-coupled coil in the previous embodiment has all adopted helix shape, but in actual applications, it also can adopt other suitable shapes, for example it can be concentrically ringed shape roughly, and each circle in the described concentric circles comprises a plurality of arc arcs, and at least one coupling part of extending and connecting between arc, and described arc extends along described concentric circles respectively.And for the path of stereochemical structure, its diameter also is not limited to and equates this situation from top to bottom all the time described in the previous embodiment, but also can adopt from top to bottom the gradually gradually little such mode of diameter greatly or from top to bottom of diameter.As for the concrete shape that each path can adopt, can see other patents/patent application document of the applicant for details, do not repeat them here.Can be that CN2807421, name are called the Chinese utility model patent of " inductance-coupled coil and inductance coupled plasma device thereof " for example, and application number be 200610112570.5, name is called the Chinese invention patent application documents of " inductance-coupled coil and adopt the plasma device of this inductance-coupled coil " referring to notification number.
In addition, each path in each group coil windings can adopt mode in parallel to connect each other.As for these three groups of coil windings connected mode each other, for example can adopt to be connected in series or to be connected in parallel or connection in series-parallel mixes modes such as connection.
By foregoing description as can be seen, the inductance-coupled coil in the previous embodiment includes inner ring winding, outmost turns winding and boundary in middle winding three parts between the two.Wherein, inner ring winding, outmost turns winding and middle winding form the inductance-coupled coil of a stereochemical structure, and can set the installation site of three windings or apart from the relative altitude of medium window according to different reaction chamber structures and process conditions, so that the induction field that radio-frequency current produces when flowing through this coil is more even, thereby it is more even that the radio-frequency power that is coupled to the medium window below is distributed, and then produce more uniform plasma.Like this, by the diffusion motion of plasma, can be at an easy rate above processed wafer, obtain the plasma that is evenly distributed, and obtain bigger process window.
In addition, aforementioned each group coil windings is connected in parallel by two identical paths and nested the forming of symmetry at least.Adopt this nested parallel-connection structure, not only can in reaction chamber, produce distribute relative uniform electric magnetic field and radio-frequency power, and then produce uniform plasma; And adopt the coil of this nested parallel-connection structure, can also reduce the inductance of inductance-coupled coil, reduce the capacitive coupling of radio-frequency power to plasma, improve the coupling efficiency of radio-frequency power, and can obtain accurate control to etch rate, like this, even increase the size of wafer, also can easily above this wafer, obtain large-area plasma, and the uniformity of improving the distribution of large tracts of land technology ionic medium body, can also accurately control etch rate simultaneously, thereby the physical-chemical reaction speed difference that wafer surface is taken place is less, with the uniformity of raising etch rate and the processing/processing quality of wafer.
Be understandable that, although the inductance-coupled coil described in the previous embodiment is by inner ring winding, the outmost turns winding, and the boundary forms in middle winding three parts between the two, but in actual applications, the quantity of coil windings is not limited to described three groups, for example also can be for more than two groups or three groups, and the installation site that can set these windings according to different reaction chamber structures and process conditions or apart from the relative altitude of medium window, with the final plasma that acquisition is evenly distributed above processed wafer, and obtain good processing.
In addition, the present invention also provides a kind of plasma processing apparatus that adopts inductance-coupled coil provided by the present invention.Below in conjunction with Fig. 7 plasma processing apparatus provided by the invention is elaborated.
See also Fig. 7, plasma processing apparatus provided by the invention comprises reaction chamber 4, medium window 17, electrostatic chuck 6 and inductance-coupled coil 3.Wherein, electrostatic chuck 6 is positioned at reaction chamber 4, and links to each other with radio frequency source 11 via adaptation 10.This electrostatic chuck 6 is provided with the wafer 5 of processed processing.Be provided with medium window 17 above reaction chamber 4, inductance-coupled coil 3 just places on this medium window 17, and links to each other with radio frequency source 1 via adaptation 2.
As can be seen, the The Nomenclature Composition and Structure of Complexes and the prior art of the plasma processing apparatus in the present embodiment are similar, and the difference of the two is: what the inductance-coupled coil 3 in the plasma processing apparatus in the present embodiment adopted is a kind of inductance-coupled coil provided by the present invention.This inductance-coupled coil 3 comprises three groups of coil windings, that is, inner ring winding, outmost turns winding and boundary are in the middle winding between the two.Wherein, each group in these three groups of windings is planar structure.In actual applications, these three groups of coil windings be arranged on medium window 17 above, yet they are not in same plane.Particularly, inner ring winding 7 roughly is positioned at a plane with outmost turns winding 9 and is provided with near medium window 17, middle winding 8 is provided with away from medium window 17, like this, the upper surface of inner ring winding 7 is roughly the same apart from the distance of medium window 17 with the upper surface of outmost turns winding 9 apart from the distance of medium window 17, the upper surface of middle winding 8 apart from the distance of medium window 17 then greater than the upper surface of the upper surface of inner ring winding 7 or outmost turns winding 9 distance apart from medium window 17, so that can above processed wafer 5, obtain the plasma that is evenly distributed, can reduce simultaneously the capacitive coupling of radio-frequency power to plasma, improve the coupling efficiency of radio-frequency power, and can accurately control technical processs such as etch rates, with the good processing of final acquisition.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (13)
1. an inductance-coupled coil is characterized in that, comprises the different and mutually nested coil windings of at least two group diameters, and the upper surface of at least two group coil windings in the described coil windings is in the plane of differing heights, so that the plasma that acquisition is evenly distributed.
2. inductance-coupled coil according to claim 1 is characterized in that, described each group coil windings comprises at least two mutually nested and be symmetrically distributed paths.
3. inductance-coupled coil according to claim 2 is characterized in that, described path is a planar structure.
4. inductance-coupled coil according to claim 3 is characterized in that described path is the shape of snail line, and described helix is the form of spiral of Archimedes or involute or vortex-like line.
5. inductance-coupled coil according to claim 3, it is characterized in that, described path is concentrically ringed shape roughly, and each circle in the described concentric circles comprises a plurality of arc arcs, and at least one coupling part of between arc, extending and connecting, described arc extends along described concentric circles respectively.
6. inductance-coupled coil according to claim 1 is characterized in that, described path is a stereochemical structure.
7. inductance-coupled coil according to claim 6 is characterized in that, it is three-dimensional spiral-shaped that described path is, and identical or diameter is gradually little or diameter is gradually big along the diameter of its helix of ascent direction.
8. inductance-coupled coil according to claim 1 is characterized in that, described each group coil windings comprise three mutually nested and be symmetrically distributed path.
9. inductance-coupled coil according to claim 1 is characterized in that, the quantity of the coil windings that described diameter is different and mutually nested is 3, and the height of middle winding upper surface is higher than the height of inner ring winding and outmost turns winding upper surface.
10. inductance-coupled coil according to claim 9, it is characterized in that, the diameter of described inner ring winding is less than the diameter of processed wafer, the diameter of winding is substantially equal to the diameter of processed wafer in the middle of described, and the diameter of described outmost turns winding is greater than the diameter of processed wafer and less than the size of medium window.
11., it is characterized in that each path in described each group coil windings is connected in parallel according to any described inductance-coupled coil in the claim 2 to 10.
12. inductance-coupled coil according to claim 1 is characterized in that, described a plurality of coil windings connected mode each other is series system, parallel way and series-parallel connection mode.
13. plasma processing apparatus, comprise reaction chamber, the top of described reative cell is provided with dielectric window, it is characterized in that, above described dielectric window, be provided with as any described inductance-coupled coil in the claim 1 to 12, described inductance-coupled coil is connected with radio-frequency power supply by radio frequency adaptation, so that obtain the plasma that is evenly distributed in reaction chamber.
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |