CN2807421Y - Jigger coupling circuit and jigger coupling plasma apparatus - Google Patents
Jigger coupling circuit and jigger coupling plasma apparatus Download PDFInfo
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- CN2807421Y CN2807421Y CN 200520001646 CN200520001646U CN2807421Y CN 2807421 Y CN2807421 Y CN 2807421Y CN 200520001646 CN200520001646 CN 200520001646 CN 200520001646 U CN200520001646 U CN 200520001646U CN 2807421 Y CN2807421 Y CN 2807421Y
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Abstract
The utility model relates to an inductive coupling coil which is composed of two sections or more than two sections of coils with the same shape. Each section of coils is centrally and symmetrically arranged in space. All sections of coils are connected in parallel. Each section of coils is formed by connecting two turns or more than two turns of arc-shaped coils with different diameters in series. Therefore, all coils are centrally and symmetrically distributed as a whole, the fields of all coils in a reaction chamber body are uniformly distributed and plasma bodies are uniformly distributed. The difference of chemical reaction velocities on wafer surfaces is little, and corrosion rate is uniform. The utility model improves wafer corrosion quality. Otherwise, because the coils form an arc shape, the utility model has simple processing technology, the little individual diversity of the same group of coils is easily ensured and the uniformity of corrosion rate is improved.
Description
Technical field
The utility model relates to a kind of semiconductor wafer process equipment accessory, relates in particular to a kind of inductance-coupled coil and inductance coupled plasma device thereof.
Background technology
At present, along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the working ability of semiconductor wafer constantly improves in this enterprise that will seek survival the product integrated circuit.Plasma device is widely used in the manufacturing process of making integrated circuit (IC) or MEMS device.Wherein inductance coupled plasma device (ICP) is widely used in the technologies such as etching.Under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state in the plasma, various physics and chemical reaction take place and form volatile product in these active reactive groups and the material surface that is etched, thereby the material surface performance is changed.
Inductance coupled plasma device shown in Figure 1 is the structure that great majority adopt in the present semiconductor etching device.Generally be made up of with inductance-coupled coil 3 reaction chamber 4, electrostatic chuck 9, electrostatic chuck 9 is arranged in reaction chamber 4, on the electrostatic chuck 9 wafer is installed.Inductance-coupled coil 3 is positioned on the quartz cover 5 of reaction chamber 4 tops.The center of quartz cover 5 is provided with an air inlet pipe.In semiconductor fabrication processes, the process gas that enters reaction chamber 4 from air inlet pipe is formed plasma, the material of the plasma etching wafer surface of generation by inductance-coupled coil 3 ionization of top.Molecular pump is extracted the gas in the reaction chamber 4 out in the system.
In this course, the radio-frequency power that makes gas produce ionization formation plasma comes from inductance-coupled coil 3, and Fig. 2 is inductance-coupled coil 3 structures that great majority adopt in the present semiconductor etching device.Because of inductance-coupled coil 3 structures are the snail structure, be dissymmetrical structure, this inductance-coupled coil 3 is inhomogeneous in the diverse location institute ELECTROMAGNETIC FIELD power of reaction chamber 4, so the plasma density of reaction chamber 4 middle bodies is higher, and the plasma density of edge part is lower.As seen, the plasma density that is excited by planar inductor coupling coil 3 exists very big azimuthal asymmetry can only rely on diffusion to remedy peripheral low density zone.The size of present wafer is increased to 300mm from 100mm.The volume of reaction chamber 4 also increases accordingly, rely on diffusion to make plasma density reach evenly difficulty very, therefore present most etching apparatus all exists the uneven problem of etch rate, and this has caused very big adverse effect to semiconductor fabrication process.
In addition, also there is very big difficulty in the snail structure in the manufacture craft process of coil, is difficult to accomplish the unanimity of helix pitch, and the individual difference of coil is big on the same group, and this also largely influences the uniformity of etch rate.
In order on the material surface that is etched, to obtain more uniform etch rate, just need above reaction chamber 4 internal wafers, obtain plasma density distribution relatively uniformly.This just needs a kind of inductance-coupled coil 3 of invention to solve the problems referred to above, makes the wafer top obtain plasma distribution comparatively uniformly, improves the quality of etching.
Summary of the invention
In view of above-mentioned existing in prior technology problem, the purpose of this utility model provides a kind of inductance-coupled coil and inductance coupled plasma device thereof, the processing technology of inductance-coupled coil is good, process gas is evenly distributed above the wafer of reaction chamber, the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, improves the quality of etched wafer.
The purpose of this utility model is achieved through the following technical solutions:
A kind of inductance-coupled coil is made up of the coil that shape is identical more than two sections or two sections; Each section coil is the center symmetric arrangement spatially; In parallel between each section coil; Every section coil is in series by the arc coil of two circles or the above different-diameter of two circles.
Described coil is two sections, and every section coil is three circles or four circle arc coils.
Described coil is three sections, and every section coil is three circles or four circle arc coils.
Described coil is four sections, and every section coil is three circles or four circle arc coils.
The arc coil of diameter minimum connects into a full circle and realizes parallel connection in described each section coil, draws one section coil and connects the power supply one-level; The outermost end of described each section coil links together and realizes parallel connection, connects another level of power supply.
Two exits of described each section coils from parallel connection of coils are positioned at the eccentric position of coil.
Described every section coil is in series by a bit of connecting coil for each circle arc coil.
Described each circle coil is that circular arc is connected with the junction of connecting coil.
A kind of inductance coupled plasma device that uses above-mentioned inductance-coupled coil comprises that reaction chamber, electrostatic chuck, inductance-coupled coil and power supply are partly; Power supply partly is made up of adaptation and radio frequency source; Electrostatic chuck is connected adaptation and radio frequency source respectively successively with inductance-coupled coil.
The technical scheme that provides by above-mentioned the utility model as can be seen, inductance-coupled coil described in the utility model is made up of the coil that shape is identical more than two sections or two sections; Each section coil is the center symmetric arrangement spatially; In parallel between each section coil; Every section coil is in series by the arc coil of two circles or the above different-diameter of two circles.So being the center on the whole, all coils is symmetrically distributed.Therefore its field distribution in reaction cavity is even, makes that the distribution of plasma is also more even.The chemical reaction velocity difference that wafer surface is taken place is less, and etch rate is even, improves the quality of etched wafer.Moreover because coil is an arc, processing technology is simple, guarantees that easily the individual difference of coil is little on the same group, has improved the uniformity of etch rate.
Description of drawings
Fig. 1 is the inductance coupled plasma device structural representation of prior art;
Fig. 2 is the inductance-coupled coil structural representation of prior art;
Fig. 3 is the structural representation one of inductance-coupled coil described in the utility model;
Fig. 4 is the B-B cutaway view of the structure schematic diagram one of inductance-coupled coil described in the utility model;
Fig. 5 is the structural representation two of inductance-coupled coil described in the utility model;
Fig. 6 is the C-C cutaway view of the structure schematic diagram two of inductance-coupled coil described in the utility model;
Fig. 7 is the structural representation three of inductance-coupled coil described in the utility model;
Fig. 8 is the A-A cutaway view of the structure schematic diagram three of inductance-coupled coil described in the utility model;
Embodiment
Inductance-coupled coil described in the utility model, its embodiment such as Fig. 3, Fig. 4, Fig. 5 and shown in Figure 6: a kind of inductance-coupled coil, form by the coil that shape is identical more than two sections or two sections; Each section coil is the center symmetric arrangement spatially; In parallel between each section coil; Every section coil is in series by the arc coil of two circles or the above different-diameter of two circles.The arc coil of diameter minimum connects into a full circle and realizes parallel connection in each section coil, draws one section coil and connects the power supply one-level; The outermost end of each section coil links together and realizes parallel connection, connects another level of power supply.
Specific embodiment 1 is as shown in Figure 3 and Figure 4: the inductance-coupled coil structure is made up of two section four circle coil, and two sections coil shapes are identical, and the azimuth differs 180 degree; It is by 6 series connection of three sections connecting coils between 180 degree that the arc length of each circle coil of single hop is slightly less than.The arc coil of diameter minimum connects into a full circle and realizes in parallel in two sections coils; The outermost end of two sections coils links together and realizes parallel connection.Two in parallel terminals go out the center that line position is avoided reaction chamber 4, in order to avoid with the air inlet pipe interference of reaction chamber 4.
Specific embodiment 3 is as Fig. 7 and shown in Figure 8: the inductance-coupled coil structure is made up of four section four circle coil, and four sections coil shapes are identical, and the azimuth differs 90 degree; It is by 6 series connection of three sections connecting coils between 90 degree that the arc length of each circle coil of single hop is slightly less than.The arc coil of diameter minimum connects into a full circle and realizes in parallel in four sections coils; The outermost end of four sections coils links together and realizes parallel connection.Two in parallel terminals go out the center that line position is avoided reaction chamber 4, in order to avoid with the air inlet pipe interference of reaction chamber 4.
This structure makes electric current and the capacitive coupling in the coil redistribute, thereby makes the field distribution in the reaction chamber 4 even, and the distribution of plasma is also more even.
Above-mentioned inductance-coupled coil is applied in the inductance coupled plasma device, comprises reaction chamber 4, electrostatic chuck 9, inductance-coupled coil 3 and power supply part; Power supply partly is made up of adaptation 1 and radio frequency source 2; Electrostatic chuck 9 is connected adaptation 7 and radio frequency source 8 respectively successively with inductance-coupled coil 3.
The above; it only is the preferable embodiment of the utility model; but protection range of the present utility model is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement all should be encompassed within the protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claims.
Claims (9)
1, a kind of inductance-coupled coil is characterized in that, is made up of the coil that shape is identical more than two sections or two sections; Each section coil is the center symmetric arrangement spatially; In parallel between each section coil; Every section coil is in series by the arc coil of two circles or the above different-diameter of two circles.
2, inductance-coupled coil according to claim 1 is characterized in that, described coil is two sections, and every section coil is three circles or four circle arc coils.
3, inductance-coupled coil according to claim 1 is characterized in that, described coil is three sections, and every section coil is three circles or four circle arc coils.
4, inductance-coupled coil according to claim 1 is characterized in that, described coil is four sections, and every section coil is three circles or four circle arc coils.
According to claim 1,2,3 or 4 described inductance-coupled coils, it is characterized in that 5, the arc coil of diameter minimum connects into a full circle and realizes parallel connection in described each section coil, draws one section coil and connects the power supply one-level; The outermost end of described each section coil links together and realizes parallel connection, connects another level of power supply.
6, inductance-coupled coil according to claim 5 is characterized in that, two exits of described each section coils from parallel connection of coils are positioned at the eccentric position of coil.
According to claim 1,2,3 or 4 described inductance-coupled coils, it is characterized in that 7, described every section coil is in series by a bit of connecting coil for each circle arc coil.
8, inductance-coupled coil according to claim 7 is characterized in that, described each circle coil is that circular arc is connected with the junction of connecting coil.
9, a kind of inductance coupled plasma device that uses above-mentioned inductance-coupled coil is characterized in that comprising that reaction chamber, electrostatic chuck, inductance-coupled coil and power supply are partly; Power supply partly is made up of adaptation and radio frequency source; Electrostatic chuck is connected adaptation and radio frequency source respectively successively with inductance-coupled coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520001646 CN2807421Y (en) | 2005-01-27 | 2005-01-27 | Jigger coupling circuit and jigger coupling plasma apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520001646 CN2807421Y (en) | 2005-01-27 | 2005-01-27 | Jigger coupling circuit and jigger coupling plasma apparatus |
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| Publication Number | Publication Date |
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| CN2807421Y true CN2807421Y (en) | 2006-08-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200520001646 Expired - Lifetime CN2807421Y (en) | 2005-01-27 | 2005-01-27 | Jigger coupling circuit and jigger coupling plasma apparatus |
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| CN (1) | CN2807421Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211687B (en) * | 2006-12-30 | 2011-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and inductance coupling plasma device applying same |
| CN101582322B (en) * | 2008-05-12 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN101515498B (en) * | 2008-02-18 | 2013-12-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN110415948A (en) * | 2019-08-09 | 2019-11-05 | 江苏鲁汶仪器有限公司 | A kind of three-dimensional four spiral inductances coupling coil |
-
2005
- 2005-01-27 CN CN 200520001646 patent/CN2807421Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211687B (en) * | 2006-12-30 | 2011-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and inductance coupling plasma device applying same |
| CN101515498B (en) * | 2008-02-18 | 2013-12-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN101582322B (en) * | 2008-05-12 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN110415948A (en) * | 2019-08-09 | 2019-11-05 | 江苏鲁汶仪器有限公司 | A kind of three-dimensional four spiral inductances coupling coil |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20150127 Granted publication date: 20060816 |