CN1852631A - Multi-solenoid plasma source - Google Patents
Multi-solenoid plasma source Download PDFInfo
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- CN1852631A CN1852631A CN 200510126397 CN200510126397A CN1852631A CN 1852631 A CN1852631 A CN 1852631A CN 200510126397 CN200510126397 CN 200510126397 CN 200510126397 A CN200510126397 A CN 200510126397A CN 1852631 A CN1852631 A CN 1852631A
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Abstract
The disclosed plasma source includes some multiple solenoids split into inner set of coil, and outer set of coil. The said inner set and outer set are connected in series or parallel. The advantages of the invention are: symmetrical electromagnetic field distributed inside reaction chamber so as to improve evenness of plasma distributed inside reaction chamber; and etching speed at each point on surface of chip is closer. Even along with growth of the chip size, the invention is also able to control etching speed and evenness from center to fringe.
Description
Technical field
The present invention relates to microelectric technique, the multi-solenoid plasma source in particularly a kind of manufacturing process that is applied to make integrated circuit (IC) or MEMS device.
Background technology
At present, along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the working ability of semiconductor wafer constantly improves in this enterprise that will seek survival the product integrated circuit.Plasma device widely.Wherein inductance coupled plasma device (ICP) is widely used in the technologies such as etching.Under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state in the plasma, various physics and chemical reaction take place and form volatile product in these active reactive groups and the material surface that is etched, thereby the material surface performance is changed.
The ICP device can be finished kinds of processes at the semiconductor manufacture view, as anisotropic etching and chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD) etc.For anisotropic etching, the ICP device is used to produce highdensity plasma, and plasma need excite by the low pressure firing frequency when producing usually.Cation is vertically done accelerated motion to wafer under the biasing electric field effect that radio frequency produces, the bombardment wafer produces physics and chemical etching or material deposition, as polysilicon, silicon dioxide are carried out etching.Anisotropic etching is used for generating vertical sidewall integrated circuit manufacturing.The ICP device also is used for waiting tropism's chemical etching, as stripping photoresist.
Inductance coupled plasma device shown in Figure 1 is the structure that generally adopts in the present semiconductor etching device.In semiconductor fabrication processes, the process gas that enters reaction chamber 3 from the air inlet 2 of quartz cover 1 central authorities is formed plasma, the material on plasma etching wafer 5 surfaces of generation by plasma source inductance-coupled coil 4 ionization of top.The gas of molecular pump 6 extraction reaction chambers 3 in the system from the gas outlet.In this course, the radio-frequency power that makes gas produce ionization formation plasma comes from inductance-coupled coil 4, in order on the material surface that is etched, to obtain more uniform etch rate, just need above reaction chamber 3 internal wafers 5, obtain plasma density distribution relatively uniformly.This just needs a kind of new plasma source to solve the problems referred to above, makes wafer 5 tops obtain plasma distribution comparatively uniformly, improves the quality of etching.
Fig. 2 is a kind of loop construction that United States Patent (USP) (U.S 4948458) provides, it is the loop construction that great majority adopt in the present semiconductor etching device, but the plasma distribution that it excited is very inhomogeneous, because its loop construction such as figure two are depicted as the snail structure.This coil is stronger in reative cell central portion branch ELECTROMAGNETIC FIELD, so the plasma density of reaction chamber middle body is higher, can only rely on diffusion to remedy peripheral low density zone.This has just caused for the dependence of gas pressure very big, and just using at 1-10mTorr (holder) just can have best performance.This makes that the adjustable window of technology is very little, and semiconductor fabrication process has been caused significant limitation.
At present, the size of wafer is increased to 300mm from 100mm.The also corresponding increase of the volume of reaction chamber, the asymmetry problem on limit, limit is more and more serious.In addition, when the diameter of wafer reaches 300mm, just need the coil of size greater than 300mm.And the problem that helical coil faced of at this moment this traditional planar structure is exactly that inductance is excessive, and the inhomogeneities of corresponding radially plasma density is also increasing.Because big inductance has caused big voltage and unsettled impedance matching between coil terminal, big voltage also can cause the capacitive coupling between coil and plasma, thereby causes low coupling efficiency and uneven plasma distribution.Therefore present most etching apparatus all is faced with the uneven problem of etch rate, and this has caused significant limitation to semiconductor fabrication process.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is at above-mentioned the deficiencies in the prior art, a kind of multi-solenoid plasma source that can obtain uniform plasma distribution above wafer in reaction chamber is provided.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
Multi-solenoid plasma source of the present invention comprises inductance-coupled coil, and wherein said inductance-coupled coil is the multi-solenoid shape.
Wherein the rf inputs of inductance-coupled coil is in series with electric capacity.
Wherein said inductance-coupled coil is several, group coil in they are divided into, organizes three groups of coil and middle groups coils outward.
Wherein said inside and outside group of serial or parallel connection links together.
The group coil is made up of several inductance-coupled coils in parallel or that be connected in series in wherein said.Described outer group coil is made up of several inductance-coupled coils in parallel or that be connected in series.
The radio-frequency (RF) output end of wherein said multi-solenoid plasma source is in series with ground capacity.
Group coil in wherein said, the rf inputs of organizing coil outward are in series with electric capacity respectively.
(3) beneficial effect
The advantage and the good effect of multi-solenoid plasma source of the present invention are: among the present invention, because inductance-coupled coil is the multi-solenoid shape, it is a three-dimensional coil with three-dimensional structure, and the magnetic field intensity that three dimensional coils produces on each direction in space is more even than planar structure, therefore can above wafer in reaction chamber, obtain uniform plasma distribution, also reduced simultaneously dependence, in bigger gas pressure scope, can both show superior performance gas pressure.
Description of drawings
Fig. 1 is the cutaway view of existing inductance coupled plasma device;
Fig. 2 is the structural representation of existing plasma source;
Fig. 3 is the stereogram of multi-solenoid plasma source of the present invention;
Fig. 4 is the vertical view of Fig. 3.
Among the figure: 1. quartz cover; 2. Zhong Yang air inlet; 3. reaction chamber; 4. inductance-coupled coil; 5. wafer; 6. gas outlet; 7. interior group coil; 8. organize coil outward; 9. middle groups coil.
Embodiment
Below in conjunction with accompanying drawing, further describe the embodiment of multi-solenoid plasma source of the present invention, but be not used for limiting protection scope of the present invention.
Referring to Fig. 3, Fig. 4 and Fig. 5.Multi-solenoid plasma source of the present invention comprises inductance-coupled coil 1, and wherein said inductance-coupled coil 1 is the multi-solenoid shape, and the rf inputs of inductance-coupled coil 1 is in series with electric capacity.Be used for CURRENT DISTRIBUTION on the regulating winding in the rf inputs series capacitance of multi-solenoid shape coil, the electromagnetic field that can better control like this in the reative cell distributes, thereby makes the plasma that arrives on the wafer evenly distribute.
In the multi-solenoid plasma source of the present invention, inductance-coupled coil 1 also can be several, group coil 7 in they are divided into, organizes 9 three groups of coil 8 and middle groups coils outward, and interior, in, outer three groups of serial or parallel connections link together.Interior group coil 7, several inductance-coupled coils 1 compositions of organizing coil 8,9 each the free parallel connection of middle groups coil or be connected in series outward.Wherein parallel connection refers to that corresponding upper end links together, and corresponding lower end links together; Be head and the tail connection in turn and be connected in series.That rf inputs and output are added in respectively is interior, in, three terminals of external coil.Interior, in, outside organize under the situation of coils from parallel connection of coils, then interior, in, the rf inputs of outer three groups of coils series capacitance respectively, be used for the CURRENT DISTRIBUTION on the regulating winding, thereby regulated electromagnetic field distribution in the reaction chamber; Interior, in, outside organize under the situation of coil series connection, then in radio-frequency (RF) output end series connection earth capacitance, be used for the standing wave electric current of regulating winding, regulating winding institute's ELECTROMAGNETIC FIELD in reative cell distributes.Thereby can obtain large-area plasma easily, improve the uniformity of large tracts of land technology ionic medium body.This coil makes being distributed in radially of plasma also distribute more symmetrically and evenly with azimuth direction by the identical or different coil distribution of a plurality of structures field distribution symmetry in the conditioned reaction cavity flexibly.
Multi-solenoid plasma source of the present invention makes electromagnetic field very symmetrical in the distribution of reaction chamber inside, thereby has improved the distributing homogeneity of plasma in reaction chamber inside, makes that the etch rate of each point is more approaching on wafer surface.Both made the increase along with wafer size, technical scheme of the present invention also can be controlled etch rate and the uniformity from wafer central authorities to the edge well.
More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.
Claims (9)
1. multi-solenoid plasma source comprises inductance-coupled coil (1), it is characterized in that described inductance-coupled coil (1) is the multi-solenoid shape.
2. multi-solenoid plasma source according to claim 1 is characterized in that the rf inputs of inductance-coupled coil (1) is in series with electric capacity.
3. multi-solenoid plasma source according to claim 1 is characterized in that described inductance-coupled coil (1) is several, group coil (7) in they are divided into, organizes (9) three groups of coil (8) and middle groups coils outward.
4. multi-solenoid plasma source according to claim 3 is characterized in that described inside and outside group is connected in series.
5. multi-solenoid plasma source according to claim 4 is characterized in that described inside and outside group is connected in parallel together.
6. according to claim 3,4 or 5 described multi-solenoid plasma sources, it is characterized in that described in group coil (7) form by several inductance-coupled coils (1) in parallel or that be connected in series.
7. according to claim 3,4 or 5 described multi-solenoid plasma sources, it is characterized in that described outer group coil (8) is made up of several inductance-coupled coils (1) in parallel or that be connected in series.
8. multi-solenoid plasma source according to claim 4 is characterized in that the radio-frequency (RF) output end of described multi-solenoid plasma source is in series with ground capacity.
9. multi-solenoid plasma source according to claim 5, it is characterized in that described in group coil (7), the rf inputs of organizing coil (8) outward be in series with electric capacity respectively.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510126397 CN1852631A (en) | 2005-12-08 | 2005-12-08 | Multi-solenoid plasma source |
| PCT/CN2006/003258 WO2007062605A1 (en) | 2005-12-02 | 2006-12-04 | Plasma source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510126397 CN1852631A (en) | 2005-12-08 | 2005-12-08 | Multi-solenoid plasma source |
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| CN1852631A true CN1852631A (en) | 2006-10-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200510126397 Pending CN1852631A (en) | 2005-12-02 | 2005-12-08 | Multi-solenoid plasma source |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515498B (en) * | 2008-02-18 | 2013-12-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN103906338A (en) * | 2012-12-31 | 2014-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma device |
| CN103972012A (en) * | 2013-01-25 | 2014-08-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma equipment with same |
| CN106711005A (en) * | 2015-11-13 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment and plasma generation method |
| CN106880401A (en) * | 2017-03-28 | 2017-06-23 | 成都美创医疗科技股份有限公司 | A kind of plasma debridement surgical knife |
| CN109496050A (en) * | 2019-01-03 | 2019-03-19 | 厦门大学 | A kind of layering plasma generating device |
| CN110574122A (en) * | 2017-04-26 | 2019-12-13 | 托卡马克能量有限公司 | Combined neutron shield and solenoid |
| CN114922790A (en) * | 2022-05-19 | 2022-08-19 | 哈尔滨工业大学 | Radio frequency ion thruster based on ICP internal coupling discharge |
| WO2023109480A1 (en) * | 2021-12-17 | 2023-06-22 | 江苏鲁汶仪器有限公司 | Inductive coupled coil, radio frequency provision apparatus, radio frequency control method, and device |
-
2005
- 2005-12-08 CN CN 200510126397 patent/CN1852631A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515498B (en) * | 2008-02-18 | 2013-12-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN103906338A (en) * | 2012-12-31 | 2014-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma device |
| CN103906338B (en) * | 2012-12-31 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of plasma device |
| CN103972012A (en) * | 2013-01-25 | 2014-08-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma equipment with same |
| CN106711005A (en) * | 2015-11-13 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment and plasma generation method |
| CN106880401B (en) * | 2017-03-28 | 2023-05-26 | 成都美创医疗科技股份有限公司 | Plasma debridement scalpel |
| CN106880401A (en) * | 2017-03-28 | 2017-06-23 | 成都美创医疗科技股份有限公司 | A kind of plasma debridement surgical knife |
| CN110574122A (en) * | 2017-04-26 | 2019-12-13 | 托卡马克能量有限公司 | Combined neutron shield and solenoid |
| CN110574122B (en) * | 2017-04-26 | 2021-05-14 | 托卡马克能量有限公司 | Neutron shielding device for central column of tokamak nuclear fusion reactor |
| CN109496050A (en) * | 2019-01-03 | 2019-03-19 | 厦门大学 | A kind of layering plasma generating device |
| WO2023109480A1 (en) * | 2021-12-17 | 2023-06-22 | 江苏鲁汶仪器有限公司 | Inductive coupled coil, radio frequency provision apparatus, radio frequency control method, and device |
| TWI847417B (en) * | 2021-12-17 | 2024-07-01 | 大陸商江蘇魯汶儀器股份有限公司 | Inductive coupling coil, radio frequency providing apparatus, radio frequency control method and apparatus |
| CN114922790A (en) * | 2022-05-19 | 2022-08-19 | 哈尔滨工业大学 | Radio frequency ion thruster based on ICP internal coupling discharge |
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