CN103906338A - Plasma device - Google Patents
Plasma device Download PDFInfo
- Publication number
- CN103906338A CN103906338A CN201210590619.3A CN201210590619A CN103906338A CN 103906338 A CN103906338 A CN 103906338A CN 201210590619 A CN201210590619 A CN 201210590619A CN 103906338 A CN103906338 A CN 103906338A
- Authority
- CN
- China
- Prior art keywords
- coil
- loop
- plasma
- interior loop
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a plasma device which comprises an inductive coupling coil. The inductive coupling coil is connected with a radio source through a matcher, and the inductive coupling coil is used for exciting plasmas in the technological process. Etching comprises N different process steps of process gas. The inductive coupling coil comprises at least two sets of coil bodies. N coil combinations are formed through the at least two sets of coil bodies. Each type of coil combination is formed by the at least two sets of coil bodies partially or completely and the structures of the N coil combinations are different. The N coil combinations correspond to the N process steps respectively. The process step corresponding to each coil combination is conducted by selectively connecting the radio source to one of the N coil combinations. Through the plasma device, different coil structures are used according to different process gas for exciting the plasmas so as to improve the evenness of plasma distribution intensity, and therefore the process effect of a plasma process is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of plasma device.
Background technology
Along with MEMS(MEMS (micro electro mechanical system), Micro-Electro-Mechanical Systems) device and MEMS system be more and more widely used in automobile and consumer electronics field, and TSV via etch (Through Silicon Etch) technology is in the bright prospects of following encapsulation field, the dark silicon etching process of dry plasma becomes one of main flow technique in MEMS manufacture field and TSV technology gradually.
Typical dark silicon etching process is Bosch technique at present.Its main feature is: whole technical process is the alternate cycles of etch step and deposition step.Wherein the process gas of etch step is SF
6(sulphur hexafluoride), although this gas, having very high etch rate aspect etch silicon substrate, due to its isotropic etching, is difficult to control sidewall pattern.Therefore, deposition step is used to suppress the etching of oppose side wall, and this deposition step is to carry out protective side wall at side wall deposition one layer of polymeric diaphragm not to be etched, thereby obtains the only etching on vertical plane.With reference to figure 1, show a typical process process example of Bosch technique.Wherein, Fig. 1 a is the silicon chip pattern of not etching, the 101st, and photoresist layer, the 102nd, silicon body is etched; Shown in Fig. 1 b, Fig. 1 d, Fig. 1 f is the silicon chip pattern under etch step, is SF
6isotropic etching; Fig. 1 c, Fig. 1 e step is the silicon chip pattern of deposition step, uses C in deposition step
4f
8(perfluorobuttene) generates sedimentary deposit and protects with oppose side wall; In Fig. 1, etch step and deposition step hocket, and Fig. 1 g is at the final etch topography after the repeatedly circulation of etch step and deposition step.
At present dark silicon etching process is mainly realized by inductance coupled plasma device.Fig. 2 shows a kind of structural representation of conventional inductance coupled plasma device, as shown in Figure 2, inductance coupled plasma device comprises reaction chamber 4, electrostatic chuck 6 and inductance-coupled coil 3, electrostatic chuck 6 is positioned at reaction chamber 4 and is connected with radio frequency source 11 by adaptation 10, and electrostatic chuck 6 is for fixing processed wafer 5.Inductance-coupled coil 3 is positioned at reaction chamber 4 tops, and is connected with radio frequency source 1 by adaptation 2.In semiconductor fabrication processes, radio-frequency power is loaded on inductance-coupled coil 3, inductance-coupled coil 3 produces the induction field of induced field and hoop in reaction chamber 4, the process gas that enters reaction chamber 4 is ionized formation plasma by the inductance-coupled coil 3 of its top, and plasma carries out etching to the material on wafer 5 surfaces.Due to induction field in reaction chamber 4 size and distribute be by flow through each position on inductance-coupled coil 3 radio-frequency current produce induction field vector determine, therefore the structures shape of inductance-coupled coil 3 produce plasma distribution situation, also the plasma that has affected wafer 5 tops distributes, thus the etching homogeneity of final decision wafer 5.
Fig. 3 is the structure chart of the inductance-coupled coil that adopts in most inductance coupled plasma device.As shown in Figure 3, this inductance-coupled coil is made up of the conductive coil of spiral winding, and presents snail structure.When this inductance-coupled coil is used for dark silicon etching, there are the following problems: the Bosch technique of dark silicon etching, the process gas that etch step and deposition step adopt is respectively SF
6and CF
x, in etch step, adopt the SF exciting by inductance-coupled coil
6plasma carries out etching, adopts the CF exciting by inductance-coupled coil in deposition step
xplasma oppose side wall is protected, SF
6plasma has very strong electronegativity, and CF
xplasma electronegativity a little less than, the SF that therefore inductance-coupled coil excites
6plasma and CF
xthe distribution intensity of plasma exists and makes a big difference, and makes a concrete analysis of as follows.
Fig. 4 (a) and 4(b) show respectively SF in the etch step that experiment measuring obtains
6cF in plasma and deposition step
xthe distribution intensity of plasma, wherein, transverse axis is taking cm(centimetre) be the wafer position r of unit, the longitudinal axis is the normalized distribution intensity F(r of plasma).As shown in Figure 4 (a), strong electronegativity SF
6the distribution intensity of plasma above wafer is: central area intensity is lower, fringe region is higher than the distribution intensity of central area, distribution intensity starts to decline when center further away from each other again; As shown in Figure 4 (b), the weak CF of plasma electronegativity
xthe distribution intensity of plasma above wafer is: central area intensity is the highest, along with departing from central area, distribution intensity declines gradually.Can find out the SF that inductance-coupled coil excites from Fig. 4 (a) with 4(b)
6plasma and CF
xthe distribution intensity of plasma has larger difference.
Because the uniformity of wafer top plasma distribution intensity has determined the process uniformity of plasma process, the plasma that adopts above-mentioned inductance-coupled coil to excite, the plasma that cannot ensure wafer top in different process step (being etch step and deposition step for the Bosch technique of dark silicon etching) all presents and is uniformly distributed, and causes process uniformity poor.
Summary of the invention
The invention provides a kind of plasma device, thereby in plasma process process, use different loop construction activated plasmas according to different processing steps, to improve the uniformity of plasma distribution intensity, from improving the technological effect of plasma process.
In order to realize foregoing invention object, the embodiment of the present invention provides a kind of plasma device, comprise reaction chamber, radio frequency source, adaptation, be positioned at the electrostatic chuck of described reaction chamber, and be positioned at the inductance-coupled coil of described reaction chamber top, described inductance-coupled coil is connected with radio frequency source by adaptation, described inductance-coupled coil is used at technical process activated plasma, so that the workpiece being fixed on described electrostatic chuck is carried out to plasma process, described plasma process comprises N the processing step that adopts respectively different process gas, N is more than or equal to 2 integer, described inductance-coupled coil comprises at least two group diameters difference and mutually nested coils,
Form N kind coil combination by least two group coils; Wherein, every kind of coil combination is by partly or entirely forming at least two group coils, and the formation of described N kind coil combination is different; Described N kind coil combination is corresponding one by one respectively with described N processing step;
According to the characteristic distributions of the process gas adopting in current processing step, radio frequency source is optionally connected to a kind of coil combination in described N kind coil combination, to carry out the processing step corresponding with described process gas.
Preferably, in dark silicon etching process, N equals 2, and described plasma process comprises etch step and deposition step; Described coil combination is the first coil combination and the second coil combination, and described etch step adopts the first coil combination, and described deposition step adopts the second coil combination,
Described at least two group diameters differences and mutually nested coil are interior loop and exterior loop; Described the first coil is combined as interior loop, and described the second coil combination is interior loop and the exterior loop being connected in series.
Preferably, described plasma device, also comprise selector switch, described selector switch comprises moving contact, the first fixed contact and the second fixed contact, and described radio frequency source is selectively connected to described interior loop or is connected to the interior loop and the exterior loop that are connected in series by described selector switch; Wherein,
One end of described interior loop is connected to the radio-frequency (RF) output end of described adaptation, and the other end of described interior loop is connected to the moving contact of described selector switch; One end of described exterior loop is connected to the radio frequency return terminal of described adaptation, and the other end of described exterior loop is connected to the first fixed contact of described selector switch; Described the second fixed contact is connected to the radio frequency return terminal of described adaptation;
Optionally being communicated with described the second fixed contact by described moving contact makes electric current flow through described interior loop to carry out described etch step, optionally be communicated with described the first fixed contact by described moving contact and make described interior loop and exterior loop be positioned at the state that series connection is used, to carry out described deposition step.
Preferably, in dark silicon etching process, N equals 2, and described plasma process comprises etch step and deposition step; Described coil combination is the first coil combination and the second coil combination, and described etch step adopts the first coil combination, and described deposition step adopts the second coil combination,
Described at least two group diameters differences and mutually nested coil are interior loop and exterior loop; Described the first coil is combined as interior loop, and described the second coil combination is exterior loop.
Preferably, described plasma device, also comprises selector switch, and described selector switch comprises moving contact, the first fixed contact and the second fixed contact, and described radio frequency source is selectively connected to described interior loop or is connected to exterior loop by described selector switch; Wherein, one end of described interior loop is connected to the radio-frequency (RF) output end of described adaptation, and the other end of described interior loop is connected to the first fixed contact of described selector switch; One end of described exterior loop is connected to the radio-frequency (RF) output end of described adaptation, and the other end of described exterior loop is connected to the second fixed contact of described selector switch; Described moving contact is connected to the radio frequency return terminal of described adaptation;
Optionally be communicated with described the first fixed contact by described moving contact and make electric current flow through described interior loop to carry out described etch step, be optionally communicated with described the second fixed contact by described moving contact and make electric current flow through described exterior loop to carry out described deposition step.
Preferably, described inductance-coupled coil is three different coils of diameter, be respectively interior loop, coil and exterior loop, and three nested distributions of coil, the first coil is set and is combined as interior loop or the interior loop being connected in parallel and coil, the second coil combination is to connect with exterior loop after interior loop and coil are connected in parallel.
Preferably, each coil comprises at least Liang Ge path, and each path is mutually nested and symmetrical.
Preferably, described path is planar structure, and described path is snail wire, and the coplanar distribution of each path.
Preferably, described path is stereochemical structure, and described path is three-dimensional zigzag shape, and each path has identical central axis.
Preferably, the path that same coil comprises is for being connected in parallel.
Preferably, described exterior loop is planar structure, and described exterior loop comprises three paths, and each path is plane involute, and each path is mutually nested, symmetrical and mutually coplanar;
Described interior loop is stereochemical structure, and described interior loop is three-dimensional helix.
Preferably, described exterior loop is planar structure, and described exterior loop comprises three paths, and each path is plane involute, and described three paths are mutually nested, symmetrical and mutually coplanar;
Described interior loop is planar structure, and described interior loop comprises Liang Ge path, and described path is plane involute, and described Liang Ge path is mutually nested, symmetrical and mutually coplanar.
Preferably, the radio-frequency voltage of described selector switch tool and radio frequency source or impedance that radio-frequency power matches.
Preferably, described selector switch is single-pole double-throw switch (SPDT) or single-pole double throw relay.
Beneficial effect of the present invention comprises:
In plasma device provided by the invention, inductance-coupled coil comprises at least two group diameters difference and mutually nested coils, by at least two group coils are optionally used, can in different processing steps, use different loop construction activated plasmas, the plasma producing in different processing steps all can be uniformly distributed preferably, thereby improve the uniformity of whole technical process applying plasma distribution intensity, and improved the technological effect of plasma etching.
Brief description of the drawings
Fig. 1 a, Fig. 1 b, Fig. 1 c, Fig. 1 d, Fig. 1 e, Fig. 1 f and Fig. 1 g are a typical process process schematic diagram of Bosch technique in prior art;
Fig. 2 is the structural representation of inductance coupled plasma device in prior art;
Fig. 3 is the structure chart of the inductance-coupled coil that adopts in inductance coupled plasma device in prior art;
SF in the etch step that Fig. 4 (a) obtains for experiment measuring
6the distribution intensity of plasma;
CF in the deposition step that Fig. 4 (b) obtains for experiment measuring
xthe distribution intensity of plasma;
The structural representation of a kind of plasma device that Fig. 5 provides for the embodiment of the present invention;
The connection diagram of the another kind of selector switch that Fig. 6 provides for the embodiment of the present invention;
The loop construction schematic diagram of the inductance-coupled coil 110 that Fig. 7 provides for the embodiment of the present invention;
The loop construction schematic diagram of the another kind of inductance-coupled coil 110 that Fig. 8 provides for the embodiment of the present invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, the plasma device embodiment of the present invention being provided below in conjunction with accompanying drawing is described in detail.
The embodiment of the present invention provides a kind of plasma device, comprise reaction chamber, radio frequency source, adaptation, be positioned at the electrostatic chuck of described reaction chamber and be positioned at the inductance-coupled coil of described reaction chamber top, described inductance-coupled coil is connected with radio frequency source by adaptation, described inductance-coupled coil is used at technical process activated plasma, so that the workpiece being fixed on described electrostatic chuck is carried out to plasma process, described plasma process comprises N the processing step that adopts respectively different process gas, and N is more than or equal to 2 integer; Described inductance-coupled coil comprises at least two group diameters difference and mutually nested coils; Form N kind coil combination by least two group coils; Wherein, every kind of coil combination is by partly or entirely forming at least two group coils, and the formation of described N kind coil combination is different; Described N kind coil combination is corresponding one by one respectively with described N processing step; According to the characteristic distributions of the process gas adopting in current processing step, radio frequency source is optionally connected to a coil combination in described N kind coil combination, to carry out and a described processing step that coil combination is corresponding.
In above-mentioned plasma device, inductance-coupled coil comprises at least two group diameters difference and mutually nested coils, by at least two group coils are optionally used, can in different processing steps, use different loop construction activated plasmas, the plasma producing in different processing steps all can be uniformly distributed preferably, thereby improve the uniformity of whole technical process applying plasma distribution intensity, and improved the technological effect of plasma process.It should be noted that, the number of coil need to match with the size of N, that is to say and can at least form N kind coil combination by the coil of this number.
In the embodiment of the present invention, be that dark silicon etching process is elaborated for plasma process, wherein N is 2, and dark silicon etching process comprises etch step and deposition step; Described N kind coil combination is the first coil combination and the second coil combination.Be specifically described below in conjunction with Fig. 5 and Fig. 6.
Refer to Fig. 5, it shows the structural representation of a kind of plasma device that the embodiment of the present invention provides, this plasma device comprises reaction chamber 101, is positioned at the electrostatic chuck 102 of described reaction chamber 101, radio frequency source 106 and is positioned at the inductance-coupled coil 110 of described reaction chamber top, described inductance-coupled coil 110 is at technical process activated plasma, so that the workpiece 109 being fixed on described electrostatic chuck 102 is carried out to plasma process, described inductance-coupled coil 110 comprises at least two group diameters difference and mutually nested coils; Described plasma process comprises the etch step and the deposition step that adopt different process gas; Part or all of formation the first coil combination at least two group coils, at least two group coils partly or entirely as the second coil combination, wherein, described the first coil combination and described the second coil combination have different coil and form; Optionally be connected to described the first coil combination or be connected to the second coil combination by radio frequency source 106, to be connected to described the first coil combination to carry out etch step or to be connected to the second coil combination to carry out deposition step in technical process.
Wherein, inductance-coupled coil 110 is connected with radio frequency source 106 by adaptation 105, and electrostatic chuck 102 is connected with radio frequency source 104 by adaptation 103.
In the embodiment of the present invention, optionally be connected to described the first coil combination or the second coil combination by radio frequency source 106, can conveniently switch back and forth the use of the first coil combination and the second coil combination, in the time carrying out plasma process, in the time starting etch step, switch to and use the first coil combination by selector switch, because the first coil combination is set according to the characteristic distributions of the process gas of etch step, loop construction by the first coil combination carrys out activated plasma, its loop construction can meet the requirement of plasma distributing homogeneity above wafer that in etch step, process gas produces, in the time starting deposition step, switch to and use the second coil combination by selector switch, because the second coil combination is set according to the characteristic distributions of the process gas of deposition step, loop construction by the second coil combination carrys out activated plasma, and its loop construction can meet the requirement of plasma distributing homogeneity above wafer that in deposition step, process gas produces, thereby improve the uniformity of whole dark silicon etching process process applying plasma distribution intensity, improved the technological effect of dark silicon etching process.In the embodiment of the present invention, need to be according to the characteristic distributions of the process gas adopting in processing step, loop construction to the first coil combination and the second coil combination is set, so that the distributing homogeneity of the plasma that the process gas adopting in each processing step excites can meet the demands respectively, be further detailed below.
The plasma device providing for the embodiment of the present invention, in order to be applied to dark silicon etching and can to improve the process uniformity of dark silicon etching, and meets strong electronegativity SF in dark silicon etching process
6plasma and light current negativity CF
xthe requirement of plasma distributing homogeneity above wafer; In the embodiment of the present invention, according to the characteristic distributions of process gas in etch step and deposition step, the formation of the first coil combination in inductance-coupled coil 110 and the second coil combination is arranged, be elaborated below.
In the embodiment of the present invention, inductance-coupled coil 110 comprises the inside and outside nested coil of two groups of diameter differences, is respectively interior loop 130 and exterior loop 140; It is interior loop 130 and the exterior loop 140 being connected in series that described the first coil is combined as interior loop 130, the second coil combination.Described radio frequency source 106 is optionally connected to described interior loop 130 or is connected to the interior loop 130 and the exterior loop 140 that are connected in series, with in technical process, be connected to carry out described etch step with described interior loop 130 or be connected to the interior loop 130 that is connected in series and exterior loop 140 to carry out described deposition step.In above-mentioned setting, in etch step, according to strong electronegativity SF
6centered by the distribution intensity of process gas institute activated plasma above wafer, field strength is lower, fringe region is higher than the distribution intensity of central area, distribution intensity starts the feature declining when center further away from each other again, excites SF by interior loop 130
6process gas, wherein interior loop 130 can improve SF
6plasma is distributed in the intensity of central area, makes the intensity distributions of central area and fringe region more even, therefore makes SF
6process gas institute activated plasma is more even, in deposition step, excites CF by the interior loop 130 and the exterior loop 140 that are connected in series in addition
xprocess gas, can make CF
xprocess gas institute activated plasma is more even, has therefore improved the uniformity of whole dark silicon etching process.
As shown in Figure 5, this plasma device comprises selector switch 112, described selector switch 112 comprises moving contact 114, the first fixed contact 115 and the second fixed contact 116, and described radio frequency source 106 can be connected to described interior loop 130 or be selected to be connected to the interior loop 130 and the exterior loop 140 that are connected in series by the switching of selector switch 112 by selector switch 112.Fig. 5 shows a kind of exemplary connected mode, and wherein one end of interior loop 130 is connected to the radio-frequency (RF) output end 1051 of described adaptation 105, and the other end of interior loop 130 is connected to the moving contact 114 of described selector switch 112; One end of described exterior loop 140 is connected to the radio frequency return terminal 1052 of described adaptation 105, and the other end of described exterior loop is connected to the first fixed contact 115 of described selector switch 112; Described the second fixed contact 116 is connected to the radio frequency return terminal 1052 of described radio frequency source 106.
Be communicated with described the second fixed contact 116 by described moving contact 114, can make electric current flow through interior loop 130 to carry out the etch step in dark silicon etching, be communicated with the first fixed contact 115 by moving contact 114, can make electric current flow through described interior loop 130 and exterior loop 140, and interior loop 130 and exterior loop 140 are positioned at the state that series connection is used, to carry out the deposition step in dark silicon etching.Replacing of moving contact 114 by selector switch 112 switched, and can make moving contact 114 alternately be connected to the second fixed contact 116 or the first fixed contact 115, thereby alternately carry out etch step or the deposition step in dark silicon etching.
In addition, in embodiments of the present invention, in the time that inductance-coupled coil 110 is set to comprise interior loop 130 and exterior loop 140, also can be using interior loop 130 as the first coil combination, using exterior loop 140 as the second coil combination.Described radio frequency source 106 is optionally connected to described interior loop 130 or is connected to exterior loop 140, to be connected to interior loop 130 to carry out described etch step or to be connected to exterior loop 140 to carry out described deposition step in technical process.In above-mentioned setting, according to strong electronegativity SF
6the feature that process gas institute activated plasma field strength centered by the distribution intensity above wafer is lower, fringe region is higher than the distribution intensity of central area, excites SF by interior loop 130
6process gas, wherein interior loop 130 can improve SF
6plasma is distributed in the intensity of central area, makes the intensity distributions of central area and fringe region more even, therefore makes SF
6process gas institute activated plasma is more even, excites CF in addition in deposition step by exterior loop 140
xprocess gas, can make CF
xprocess gas institute activated plasma is more even, has therefore improved the uniformity of whole dark silicon etching process.
As shown in Figure 6, for the connection diagram of another kind of selector switch, plasma device comprises selector switch 122, described selector switch 122 comprises moving contact 124, the first fixed contact 125 and the second fixed contact 126, and described radio frequency source 106 can be connected to described interior loop 130 or be selected to be connected to exterior loop 140 by the switching of selector switch 122 by selector switch 122.Wherein, one end of interior loop 130 is connected to the radio-frequency (RF) output end 1051 of described adaptation 105, and the other end of interior loop 130 is connected to the first fixed contact 125 of described selector switch 122; One end of described exterior loop 140 is connected to the radio-frequency (RF) output end 1051 of adaptation 105, and the other end of described exterior loop 140 is connected to the second fixed contact 126 of described selector switch; Described moving contact 124 is connected to the radio frequency return terminal 1052 of adaptation 105.
Be communicated with described the first fixed contact 125 by described moving contact 124, can make electric current flow through interior loop 130 to carry out the etch step in dark silicon etching, be communicated with described the second fixed contact 126 by moving contact 124, can make electric current flow through exterior loop 140, to carry out the deposition step in dark silicon etching.Replacing of moving contact 124 by selector switch 122 switched, and can make moving contact 124 alternately be connected to the first fixed contact 125 or the second fixed contact 126, thereby alternately carry out etch step or deposition step.
Because radio frequency source 106 has high voltage and large electric current, selector switch 112 or 122 need to meet the normal requirement using under radio frequency high tension and large electric current.And because radio frequency source 106 has very high voltage, selector switch 112 or 122 need to have less contact capacitance, to make the first fixed contact and the second fixed contact tool and the radio-frequency voltage of radio frequency source 106 or the impedance that radio-frequency power matches in the time disconnecting, to prevent that the electric leakage occurring because impedance is too little from causing the effect of etching technics to be affected. Selector switch 112 or 122 can be single-pole double-throw switch (SPDT) or single-pole double throw relay, can be also other selector switches with circuit handoff functionality.
The selector switch providing by the embodiment of the present invention, can conveniently switch the use of the first coil combination and the second coil combination, in the time carrying out dark silicon etching, for the etch step hocketing and deposition step, in the time starting etch step, switched to and used the first coil combination by selector switch, its loop construction can meet strong electronegativity SF
6the requirement of plasma distributing homogeneity above wafer; In the time starting deposition step, switch to and use the second coil combination by selector switch, its loop construction can meet light current negativity CF
xthe requirement of plasma distributing homogeneity above wafer; Thereby improve the uniformity of whole dark silicon etching process applying plasma distribution intensity, improved the technological effect of dark silicon etching.
In the embodiment of the present invention, need to be according to the characteristic distributions of the process gas adopting in processing step, loop construction to the first coil combination and the second coil combination is set, can meet the demands with the distributing homogeneity that makes it the plasma that process gas was excited being adopted for etch step and deposition step, to have improved the uniformity of whole technical process, be elaborated below in conjunction with accompanying drawing.
In the embodiment of the present invention, comprise that taking inductance-coupled coil 110 the different coil of two diameters is illustrated as example, but inductance-coupled coil 110 provided by the invention is not limited to this, also can comprise all not identical coils of plural diameter, wherein each coil can be set to comprise at least Liang Ge path, and each path is mutually nested and symmetrical.Path in a coil can be planar structure, and each path is snail wire, and the coplanar distribution of each path, and path is positioned in same plane.Path in a coil also can stereochemical structure, and is three-dimensional zigzag shape, and each path has identical central axis.The annexation of the path in a coil is for being connected in parallel, and in addition, the annexation between the two or more coils in coil combination can be series, parallel or mixed connection.In addition, a coil in the embodiment of the present invention is not limited to comprise two or more paths, can be also single snail line coil or three-dimensional helix coil.In the time that a coil is connected radio frequency source, the flow direction of the electric current flowing through in each path in this coil (clockwise or counterclockwise) is identical.In the time that multiple coils are connected radio frequency source simultaneously, the flow direction of the electric current that different coil midstreams is crossed can be identical or different, can set according to multiple coils needed effect in the time being used in combination the current direction of each coil.
In the embodiment of the present invention, for inductance-coupled coil is clearly demonstrated, defined the related notion of coil combination, coil and path, wherein, path refers to the coil windings that comprises an input and an output; Coil can comprise one or more path, and the path in a common coil is in parallel and symmetrical nested distribution; And coil combination can be a coil, also can be made up of multiple coil series, parallel or mixed connection.
In the time that inductance-coupled coil 110 is set to comprise interior loop 130 and exterior loop 140, interior loop 130 and exterior loop 140 can be stereochemical structure, or interior loop 130 for stereochemical structure exterior loop 140 be planar structure, or interior loop 130 for planar structure exterior loop 140 be stereochemical structure, or interior loop 130 and exterior loop 140 are planar structure.Describe below in conjunction with two concrete examples.
The loop construction schematic diagram of the inductance-coupled coil 110 providing for the embodiment of the present invention as shown in Figure 7.Wherein, described exterior loop 140 is planar structure, and described exterior loop 140 comprises three paths 141,142 and 143, and each path is plane involute, and each path 141,142 is mutually nested with 143, symmetrical and mutually coplanar; Described interior loop 130 is stereochemical structure, is specially three-dimensional helix.
The loop construction schematic diagram of the another kind of inductance-coupled coil 110 providing for the embodiment of the present invention as shown in Figure 8.Wherein, described exterior loop 140 is planar structure, and described exterior loop 140 comprises three paths 141,142 and 143, and each path is plane involute, and each path 141,142 is mutually nested with 143, symmetrical and mutually coplanar.Interior loop 130 is planar structure, and interior loop 130 comprises Liang Ge path 131 and 132, and path 131 and 132 is plane involute, and path 131 is mutually nested with 132, symmetrical and mutually coplanar.
The snail line that the embodiment of the present invention provides can be spiral of Archimedes, or involute, or vortex-like line.
During the embodiment of the present invention provides, be combined as interior loop with the first coil, taking the second coil combination as exterior loop or the interior loop being connected in series and exterior loop be illustrated as example, but the invention is not restricted to this, for example, inductance-coupled coil can comprise three coils that diameter is different, be respectively interior loop, coil and exterior loop, and three nested distributions of coil, the first coil can be set and be combined as interior loop and the coil that interior loop is or is connected in parallel, the second coil combination is to connect with exterior loop after interior loop and coil are connected in parallel.In actual technical process, can be according to the technological requirement of each processing step, the plasma that each coil combination is excited is measured, and according to experimental result, the mode of loop construction and coil combination is determined.
It should be noted that, the plasma device that the embodiment of the present invention provides is not limited to be applied to dark silicon etching process, also can comprise in the plasma process process of multiple different process steps for other, in each processing step, according to the characteristic distributions of the plasma that in each processing step, process gas excites, corresponding coil combination is arranged, to improve respectively the uniformity of the plasma that process gas was excited in each processing step.In addition, in the embodiment of the present invention, comprise that taking plasma process process two different processing steps are illustrated as example, but the invention is not restricted to this, the technical process that the plasma device that the embodiment of the present invention provides carries out also can comprise three or three above different processing steps, in the time that technical process comprises more than three or three different processing steps, inductance-coupled coil can be set and comprise the different also inside and outside nested coils of multiple diameters, by use different coil combination activated plasmas in different processing steps, can ensure to meet the uniformity requirement of the plasma exciting in each different processing step, in addition, according to the different coil combination arranging, need to arrange the connection of selector switch, to meet the switching requirement to coil combination.
In plasma device provided by the invention, inductance-coupled coil comprises at least two group diameters difference and mutually nested coils, by at least two group coils are optionally used, can in different processing steps, use different loop construction activated plasmas, the plasma producing in different processing steps all can be uniformly distributed preferably, thereby improve the uniformity of whole technical process applying plasma distribution intensity, and improved the technological effect of plasma process.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (14)
1. a plasma device, comprise reaction chamber, radio frequency source, adaptation, be positioned at the electrostatic chuck of described reaction chamber and be positioned at the inductance-coupled coil of described reaction chamber top, described inductance-coupled coil is connected with radio frequency source by adaptation, described inductance-coupled coil is used at technical process activated plasma, so that the workpiece being fixed on described electrostatic chuck is carried out to plasma process, it is characterized in that
Described plasma process comprises N the processing step that adopts respectively different process gas, and N is more than or equal to 2 integer, and described inductance-coupled coil comprises at least two group diameters difference and mutually nested coils;
Form N kind coil combination by least two group coils; Wherein, every kind of coil combination is by partly or entirely forming at least two group coils, and the formation of described N kind coil combination is different; Described N kind coil combination is corresponding one by one respectively with described N processing step;
According to the characteristic distributions of the process gas adopting in current processing step, radio frequency source is optionally connected to a kind of coil combination in described N kind coil combination, to carry out the processing step corresponding with described process gas.
2. plasma device as claimed in claim 1, is characterized in that, in dark silicon etching process, N equals 2, and described plasma process comprises etch step and deposition step; Described coil combination is the first coil combination and the second coil combination, and described etch step adopts the first coil combination, and described deposition step adopts the second coil combination,
Described at least two group diameters differences and mutually nested coil are interior loop and exterior loop; Described the first coil is combined as interior loop, and described the second coil combination is interior loop and the exterior loop being connected in series.
3. plasma device as claimed in claim 2, it is characterized in that, described plasma device, also comprise selector switch, described selector switch comprises moving contact, the first fixed contact and the second fixed contact, and described radio frequency source is selectively connected to described interior loop or is connected to the interior loop and the exterior loop that are connected in series by described selector switch; Wherein,
One end of described interior loop is connected to the radio-frequency (RF) output end of described adaptation, and the other end of described interior loop is connected to the moving contact of described selector switch;
One end of described exterior loop is connected to the radio frequency return terminal of described adaptation, and the other end of described exterior loop is connected to the first fixed contact of described selector switch;
Described the second fixed contact is connected to the radio frequency return terminal of described adaptation;
Optionally being communicated with described the second fixed contact by described moving contact makes electric current flow through described interior loop to carry out described etch step, optionally be communicated with described the first fixed contact by described moving contact and make described interior loop and exterior loop be positioned at the state that series connection is used, to carry out described deposition step.
4. plasma device as claimed in claim 1, is characterized in that, in dark silicon etching process, N equals 2, and described plasma process comprises etch step and deposition step; Described coil combination is the first coil combination and the second coil combination, and described etch step adopts the first coil combination, and described deposition step adopts the second coil combination,
Described at least two group diameters differences and mutually nested coil are interior loop and exterior loop; Described the first coil is combined as interior loop, and described the second coil combination is exterior loop.
5. plasma device as claimed in claim 4, it is characterized in that, described plasma device, also comprise selector switch, described selector switch comprises moving contact, the first fixed contact and the second fixed contact, and described radio frequency source is selectively connected to described interior loop or is connected to exterior loop by described selector switch; Wherein,
One end of described interior loop is connected to the radio-frequency (RF) output end of described adaptation, and the other end of described interior loop is connected to the first fixed contact of described selector switch;
One end of described exterior loop is connected to the radio-frequency (RF) output end of described adaptation, and the other end of described exterior loop is connected to the second fixed contact of described selector switch;
Described moving contact is connected to the radio frequency return terminal of described adaptation;
Optionally be communicated with described the first fixed contact by described moving contact and make electric current flow through described interior loop to carry out described etch step, be optionally communicated with described the second fixed contact by described moving contact and make electric current flow through described exterior loop to carry out described deposition step.
6. plasma device as claimed in claim 1, it is characterized in that, described inductance-coupled coil is three different coils of diameter, be respectively interior loop, coil and exterior loop, and three nested distributions of coil, the first coil is set and is combined as interior loop or the interior loop being connected in parallel and coil, the second coil combination is to connect with exterior loop after interior loop and coil are connected in parallel.
7. plasma device as claimed in claim 1, is characterized in that, each coil comprises at least Liang Ge path, and each path is mutually nested and symmetrical.
8. plasma device as claimed in claim 7, is characterized in that, described path is planar structure, and described path is snail wire, and the coplanar distribution of each path.
9. plasma device as claimed in claim 7, is characterized in that, described path is stereochemical structure, and described path is three-dimensional zigzag shape, and each path has identical central axis.
10. plasma device as claimed in claim 7, is characterized in that, the path that same coil comprises is for being connected in parallel.
11. plasma devices as described in claim 2 or 4, it is characterized in that, described exterior loop is planar structure, and described exterior loop comprises three paths, each path is plane involute, and each path is mutually nested, symmetrical and mutually coplanar;
Described interior loop is stereochemical structure, and described interior loop is three-dimensional helix.
12. plasma devices as described in claim 2 or 4, it is characterized in that, described exterior loop is planar structure, and described exterior loop comprises three paths, each path is plane involute, and described three paths are mutually nested, symmetrical and mutually coplanar;
Described interior loop is planar structure, and described interior loop comprises Liang Ge path, and described path is plane involute, and described Liang Ge path is mutually nested, symmetrical and mutually coplanar.
13. plasma devices as described in claim 3 or 5, is characterized in that the radio-frequency voltage of described selector switch tool and radio frequency source or the impedance that radio-frequency power matches.
14. plasma devices as described in claim 3 or 5, is characterized in that, described selector switch is single-pole double-throw switch (SPDT) or single-pole double throw relay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210590619.3A CN103906338B (en) | 2012-12-31 | 2012-12-31 | A kind of plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210590619.3A CN103906338B (en) | 2012-12-31 | 2012-12-31 | A kind of plasma device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103906338A true CN103906338A (en) | 2014-07-02 |
| CN103906338B CN103906338B (en) | 2016-06-08 |
Family
ID=50997422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210590619.3A Active CN103906338B (en) | 2012-12-31 | 2012-12-31 | A kind of plasma device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103906338B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
| US20030201722A1 (en) * | 2002-04-24 | 2003-10-30 | Appleyard Nicholas John | Plasma processing apparatus |
| CN1852631A (en) * | 2005-12-08 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Multi-solenoid plasma source |
| KR100800396B1 (en) * | 2007-02-28 | 2008-02-01 | 주식회사 유진테크 | Inductively coupled plasma antenna and plasma generating apparatus for using the same |
| CN101131893A (en) * | 2006-08-23 | 2008-02-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and inductance coupling plasma body device |
| CN101136279A (en) * | 2006-08-28 | 2008-03-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Jigger coupling coil and jigger coupling plasma device |
| CN101233072A (en) * | 2005-08-04 | 2008-07-30 | 阿维扎技术有限公司 | A method of processing substrates |
| CN101345114A (en) * | 2007-07-11 | 2009-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and inductance coupling plasma apparatus using the same |
| CN101515498A (en) * | 2008-02-18 | 2009-08-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN101643904A (en) * | 2009-08-27 | 2010-02-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching device and intake system thereof |
| CN102031525A (en) * | 2009-09-29 | 2011-04-27 | 中微半导体设备(上海)有限公司 | Method for etching deep through silicon via (TSV) |
-
2012
- 2012-12-31 CN CN201210590619.3A patent/CN103906338B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5683548A (en) * | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
| US20030201722A1 (en) * | 2002-04-24 | 2003-10-30 | Appleyard Nicholas John | Plasma processing apparatus |
| CN101233072A (en) * | 2005-08-04 | 2008-07-30 | 阿维扎技术有限公司 | A method of processing substrates |
| CN1852631A (en) * | 2005-12-08 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Multi-solenoid plasma source |
| CN101131893A (en) * | 2006-08-23 | 2008-02-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and inductance coupling plasma body device |
| CN101136279A (en) * | 2006-08-28 | 2008-03-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Jigger coupling coil and jigger coupling plasma device |
| KR100800396B1 (en) * | 2007-02-28 | 2008-02-01 | 주식회사 유진테크 | Inductively coupled plasma antenna and plasma generating apparatus for using the same |
| CN101345114A (en) * | 2007-07-11 | 2009-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and inductance coupling plasma apparatus using the same |
| CN101515498A (en) * | 2008-02-18 | 2009-08-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN101643904A (en) * | 2009-08-27 | 2010-02-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching device and intake system thereof |
| CN102031525A (en) * | 2009-09-29 | 2011-04-27 | 中微半导体设备(上海)有限公司 | Method for etching deep through silicon via (TSV) |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103906338B (en) | 2016-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101104571B1 (en) | Inductive coupled plasma device | |
| KR101155840B1 (en) | Apparatus and method for plasma processing | |
| CN101043784B (en) | Hybrid plasma reactor | |
| CN101515498B (en) | Inductance coupling coil and plasma processing device adopting same | |
| JP4869059B2 (en) | Antenna, plasma processing apparatus, and substrate processing method | |
| CN101582322B (en) | Inductance coupling coil and plasma processing device adopting same | |
| US20110284167A1 (en) | Plasma processing equipment and plasma generation equipment | |
| CN1925074B (en) | Induction coupling coil and induction coupling plasma device | |
| US8404080B2 (en) | Apparatus to treat a substrate | |
| US20080119049A1 (en) | Plasma etching method and apparatus | |
| KR101095602B1 (en) | Processing device and generating device for plasma | |
| KR20100084109A (en) | Processing device and generating device for plasma | |
| WO2017152477A1 (en) | Apparatus for implementing impedance matching and power distribution, and semiconductor processing device | |
| US8853948B2 (en) | Multi discharging tube plasma reactor | |
| CN101465189B (en) | Inductance coupling coil and plasma device | |
| KR20160049628A (en) | Dual plasma generator, plasma processing system and method therefor | |
| CN103906338A (en) | Plasma device | |
| CN101500369B (en) | Inductor coupling coil and inductor coupling plasma generation apparatus | |
| CN109036817B (en) | Inductive coupling coil and process chamber | |
| JP2005517270A (en) | Inductively coupled plasma generating apparatus and method | |
| JP2005534185A (en) | Inductively coupled plasma generator with low aspect ratio | |
| CN104105329A (en) | Electric power supply device and method, and substrate processing device utilizing same | |
| KR100743842B1 (en) | Plasma reactor having plasma chamber coupled with magnetic flux channel | |
| KR101972783B1 (en) | Icp antenna and plasma processing apparatus including the same | |
| CN109148073B (en) | Coil assembly, plasma generating device and plasma equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 No. 8, Wenchang Avenue, Daxing District economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |