CN101131893A - Inductance coupling coil and inductance coupling plasma body device - Google Patents
Inductance coupling coil and inductance coupling plasma body device Download PDFInfo
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- CN101131893A CN101131893A CNA2006101125705A CN200610112570A CN101131893A CN 101131893 A CN101131893 A CN 101131893A CN A2006101125705 A CNA2006101125705 A CN A2006101125705A CN 200610112570 A CN200610112570 A CN 200610112570A CN 101131893 A CN101131893 A CN 101131893A
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- 230000008878 coupling Effects 0.000 title description 7
- 238000010168 coupling process Methods 0.000 title description 7
- 238000005859 coupling reaction Methods 0.000 title description 7
- 235000012431 wafers Nutrition 0.000 abstract description 25
- 238000006243 chemical reaction Methods 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 8
- 238000009616 inductively coupled plasma Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 241000237858 Gastropoda Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
- H01F21/04—Variable inductances or transformers of the signal type continuously variable, e.g. variometers by relative movement of turns or parts of windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F38/00—Adaptations of transformers or inductances for specific applications or functions
- H01F38/14—Inductive couplings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/02—Fixed inductances of the signal type without magnetic core
Abstract
The present invention discloses a kind of inductively coupled coil and an inductively coupled plasma device which uses the coil. The device is nested of two or several independent branches which have similar structures. The several branches are located coaxially and axial symmetrically, and connected in parallel. The each independent branch includes a stereo part and a plane part: the stereo part extends along the axis, and the plane part extends around the surface which is vertical to the axis; bottom endpoints of the stereo part smoothly connect with inner endpoints of the plane part. The inductively coupled coil is set on top of reaction chamber of the inductively coupled plasma device, and connects to a RF source. By using present invention, process gas can be equally distributed above wafers of the reaction chamber; the speeds differences between chemical reactions on wafer surfaces are not obvious; etching rates are similarly equal; quality of the etched wafers are promoted. The present invention is mainly used in processing devices of semiconductor wafer, and is also applied to other devices.
Description
Technical field
The present invention relates to a kind of semiconductor wafer process equipment accessory, relate in particular to a kind of inductance-coupled coil and inductance coupled plasma device thereof.
Background technology
At present, along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the working ability of semiconductor wafer constantly improves in this enterprise that will seek survival the product integrated circuit.Plasma device is widely used in the manufacturing process of making IC (integrated circuit) or MEMS (microelectromechanical systems) device.Wherein ICP (inductance coupled plasma device) is widely used in the technologies such as etching.Under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state in the plasma, various physics and chemical reaction take place and form volatile product in these active reactive groups and the material surface that is etched, thereby the material surface performance is changed.
Inductance coupled plasma device shown in Figure 1 is the structure that great majority adopt in the present semiconductor etching device.In semiconductor fabrication processes, the process gas that enters reaction chamber 3 from the air inlet 2 of dielectric window 1 central authorities is formed plasma, the material on plasma etching wafer 5 surfaces of generation by inductance-coupled coil 4 ionization of top.Molecular pump 6 gases discharges of extracting reaction chamber 3 out in the system from the gas outlet.In this course, the radio-frequency power that makes gas produce ionization formation plasma comes from inductance-coupled coil 4, the energisation mode that is applied at present on the inductance-coupled coil 4 is to add the 13.56MHz radio frequency, thereby make the magnetic field that has radio-frequency current to change in the inductance-coupled coil 4, according to Faraday's electromagnetic induction law, the magnetic field of this variation can induce electric field, thereby in reaction chamber 3, reacting gas is ionized into plasma, the plasma that is excited interacts with workpiece in chamber, and workpiece is carried out etching or deposition materials on workpiece.Workpiece generally is the semiconductor wafer with circular flat.Because air suction mode or reaction chamber is asymmetric, particle density, temperature and flux is asymmetric in the chamber that can induce reaction usually.The asymmetric meeting of air-flow causes the asymmetric of plasma conductivity, and the asymmetric meeting of plasma conductivity causes the inhomogeneous of power deposition, thereby causes the inhomogeneous of electron impact ionization.Increase along with wafer 5 sizes, the volume of reaction chamber 3 also increases accordingly, edge and center plasma density distribution inhomogeneities are more obvious, therefore present most etching apparatus all exists the uneven problem of etch rate, and this has caused very big adverse effect to semiconductor fabrication process.
In order on the material surface that is etched, to obtain more uniform etch rate, just need above reaction chamber 3 internal wafers 5, obtain plasma density distribution relatively uniformly, make wafer 5 tops obtain plasma distribution comparatively uniformly, improve the quality of etching.
As shown in Figure 2, be the structure of the present inductance-coupled coil of using always 4, be the snail structure, the plasma that it excited is very inhomogeneous.Because this inductance-coupled coil is stronger in reative cell central portion branch ELECTROMAGNETIC FIELD, therefore higher in the plasma density that central authorities produced, can only rely on diffusion to remedy peripheral low density zone, this has just caused for the dependence of gas pressure very big, and just using at 1-10mTorr (holder) just can have best performance.This makes that the adjustable window of technology is very little, and semiconductor fabrication process has been caused significant limitation.When plasma density distribution was inhomogeneous, the thickness that the degree of depth of etching or material deposit on wafer on the wafer was just inhomogeneous, thereby can reduce the yield of device.Particularly be increased to 300mm from 100mm when the size of wafer, the volume of reaction chamber also increases accordingly, relies on diffusion to make plasma density reach evenly very unrealistic.
In addition, when the diameter of wafer reaches 300mm, just need the corresponding size that increases inductance-coupled coil, being used for the plasma chamber of processed wafer also will increase, and so just requires the necessary corresponding increase of thickness of dielectric window 1.Otherwise dielectric window 1 can not bear the pressure reduction between the vacuum in outer atmospheric pressure of cavity and the cavity.Thick like this dielectric window 1 can reduce the coupling efficiency of energy, and this is because radiofrequency field after penetrating thick dielectric window 1, does not possess enough flux densities and encourages plasma.And the problem that at this moment this traditional spiral inductance coupling coil is faced produces heteropical plasma density exactly.Because this traditional inductance-coupled coil length can significantly increase along with the increase of wafer radius, near or surpassed 1/8th wavelength in RF excited source.Transmission line effect on the inductance-coupled coil will clearly will exist significant electric current and change in voltage on the inductance-coupled coil like this, thereby cause magnetic density significant change in plasma, thereby cause workpiece processing inhomogeneous.On the other hand, when the inductance-coupled coil size increased, its corresponding inductance also can increase, and the voltage at inductance-coupled coil two ends will increase accordingly like this.Big voltage can cause the capacitive coupling between inductance-coupled coil and plasma, and such capacitive coupling has increased the kinetic energy of ion, therefore is difficult to accurate control and treatment, can increase the micro loading effect of wafer, reduces the yield of device.In addition, the inwall that has than the ion collision plasma chamber of kinetic energy can produce particle contamination.Big inductance also can cause unsettled impedance matching and low coupling efficiency, and the corresponding radially inhomogeneities of plasma density also will increase.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of inductance-coupled coil and inductance coupled plasma device, process gas is evenly distributed above the wafer of reaction chamber, the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, improves the quality of etched wafer.
At above-mentioned technical problem, the present invention solves by the following technical programs:
Inductance-coupled coil of the present invention constitutes by the identical individual branches of a plurality of structures is nested, described a plurality of individual branches coaxial lines, and relative axis symmetric arrangement.
Described each individual branches comprises three-dimensional part and planar section, and described three-dimensional part is extended along axis direction; Described planar section along perpendicular to the plane of axis to around extend; The bottom end points of three-dimensional part and the inner terminal smooth connection of planar section.
The planar section of described individual branches is helix or spiral of Archimedes or involute or vortex-like line.
The three-dimensional part of described individual branches rises along the axis spiral.
The helix diameter of the three-dimensional part of described individual branches is identical.
The helix of the three-dimensional part of described individual branches is gradually little along the direction diameter that rises.
The helix of the three-dimensional part of described individual branches is gradually big along the direction diameter that rises.
Described individual branches has two.
The connection parallel with one another of described a plurality of individual branches.
The inductance coupled plasma device of inductance-coupled coil of the present invention comprises reative cell, and reative cell top is provided with dielectric window, and the top of described dielectric window is provided with inductance-coupled coil, and inductance-coupled coil is connected with the radio frequency power supply.
As seen from the above technical solution provided by the invention, inductance-coupled coil of the present invention and inductance coupled plasma device, owing to constitute by the identical individual branches of a plurality of structures is nested, each branch's symmetry is connected in parallel, reduced the inductance of inductance-coupled coil, thereby can obtain large-area plasma easily, improve the uniformity of large tracts of land technology ionic medium body.This inductance-coupled coil structure is distributed symmetrically the electromagnetic field in the reaction cavity simultaneously, makes the center and peripheral that is distributed in of plasma more evenly distribute;
Again because each branch all is plane and three-dimensional combination, the inductance-coupled coil of this structure is because the centre is the electric field that this electric field that just makes coil produce in the middle of reaction chamber of stereochemical structure produces corresponding to the reaction cavity place less than the inductance-coupled coil planar section, thereby solved the defective of inductance-coupled coil among Fig. 2, made plasma more even in the distribution of reaction cavity center and peripheral.
The present invention is mainly used in the semiconductor wafer process equipment, also is applicable to other equipment.
Description of drawings
Fig. 1 is the structural representation of the inductance coupled plasma device of prior art;
Fig. 2 is the inductance-coupled coil structural representation of prior art;
Fig. 3 is the perspective view of the specific embodiment one of inductance-coupled coil of the present invention;
Fig. 4 is the planar structure schematic diagram of the specific embodiment one of inductance-coupled coil of the present invention;
Fig. 5 is the facade structures schematic diagram of the specific embodiment one of inductance-coupled coil of the present invention;
Fig. 6 is the perspective view of the specific embodiment two of inductance-coupled coil of the present invention;
Fig. 7 is the facade structures schematic diagram of the specific embodiment two of inductance-coupled coil of the present invention;
Fig. 8 is the planar structure schematic diagram of the specific embodiment two of inductance-coupled coil of the present invention;
Fig. 9 is the structural representation of inductance coupled plasma device of the present invention.
Embodiment
The preferable embodiment of inductance-coupled coil of the present invention is to constitute described a plurality of individual branches coaxial lines, and relative axis symmetric arrangement by the identical individual branches of a plurality of structures is nested.
Specific embodiment is just like Fig. 3, Fig. 4, shown in Figure 5, and inductance-coupled coil constitutes by the identical individual branches of two structures is nested, two individual branches coaxial lines, and axis symmetric arrangement relatively.Each individual branches comprises three-dimensional part 10 and planar section 11, and three-dimensional part 10 is extended along axis direction; Planar section 11 along perpendicular to the plane of axis to around extend; The bottom end points of three-dimensional part 10 and the inner terminal smooth connection of planar section 11.
The planar section 11 of individual branches is a helix, can be various equidistant or unequal distant screw lines, also can be spiral of Archimedes or involute or vortex-like line, also can with other line style to around extend.
The three-dimensional part 10 of individual branches rises along the axis spiral.The helix diameter of three-dimensional part 10 is identical.Also can be gradually little along the direction diameter that rises, perhaps, gradually big along the direction diameter that rises.
The helix pitch that rises is identical, also can adopt different spacings, such as the gradually big or gradually little form of spacing.
A plurality of individual branches are connected in parallel each other, also can adopt other connected mode.
Specific embodiment two is as Fig. 6, Fig. 7, shown in Figure 8, and inductance-coupled coil is identical with the structural principle of specific embodiment one, but at planar section change is arranged slightly, makes each circle spiral spatially near an isodiametric garden as far as possible.
Each branch of inductance-coupled coil also can adopt incomplete same structure and not exclusively symmetrical layout as required, but it is identical and symmetrical substantially.
The inductance coupled plasma device of the above-mentioned inductance-coupled coil of application of the present invention, as shown in Figure 9, comprise reative cell 3, be provided with the chuck 9 that is used for placing wafer 5 in the reative cell 3, the top of reative cell 3 is provided with dielectric window 1, the middle part of dielectric window 1 is provided with air inlet 2, and gas introducing apparatus 8 is introduced reative cell 3 by air inlet 2 with process gas.
The top of dielectric window 1 is provided with inductance-coupled coil 4, the input of inductance-coupled coil 4 is connected with RF (radio frequency) source 7 by adaptation 12, the output of inductance-coupled coil 4 is by ground capacity ground connection, in reative cell 3, produce induction field, the gas that enters in the reative cell 3 is excited into plasma.Wafer 5 is carried out processing such as etching.
This structure of the present invention is connected in parallel by the essentially identical branch of structure symmetry, has reduced the inductance of inductance-coupled coil, thereby can obtain large-area plasma easily, improves the uniformity of large tracts of land technology ionic medium body.This inductance-coupled coil structure is distributed symmetrically the electromagnetic field in the reaction cavity simultaneously, makes the center and peripheral that is distributed in of plasma more evenly distribute.
Each branch all is plane and three-dimensional combination, the inductance-coupled coil of this structure is because the centre is the electric field that this electric field that just makes coil produce in the middle of reaction chamber of stereochemical structure produces corresponding to the chamber place less than the inductance-coupled coil planar section, thereby solved the defective of inductance-coupled coil among Fig. 2, made plasma more even in the distribution of chamber center and peripheral.
The present invention is mainly used in the semiconductor wafer process equipment, also is applicable to other equipment.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1. an inductance-coupled coil is characterized in that, constitutes described a plurality of individual branches coaxial lines, and relative axis symmetric arrangement by the identical individual branches of a plurality of structures is nested.
2. inductance-coupled coil according to claim 1 is characterized in that, described each individual branches comprises three-dimensional part and planar section, and described three-dimensional part is extended along axis direction; Described planar section along perpendicular to the plane of axis to around extend; The bottom end points of three-dimensional part and the inner terminal smooth connection of planar section.
3. inductance-coupled coil according to claim 2 is characterized in that, the planar section of described individual branches is helix or spiral of Archimedes or involute or vortex-like line.
4. inductance-coupled coil according to claim 2 is characterized in that, the three-dimensional part of described individual branches rises along the axis spiral.
5. inductance-coupled coil according to claim 4 is characterized in that, the helix diameter of the facade part of described individual branches is identical.
6. inductance-coupled coil according to claim 4 is characterized in that, the helix of the three-dimensional part of described individual branches is gradually little along the direction diameter that rises.
7. inductance-coupled coil according to claim 4 is characterized in that, the helix of the three-dimensional part of described individual branches is gradually big along the direction diameter that rises.
8. according to each described inductance-coupled coil of claim 1 to 7, it is characterized in that described individual branches has two.
9. according to each described inductance-coupled coil of claim 1 to 7, it is characterized in that the connection parallel with one another of described a plurality of individual branches.
10. an inductance coupled plasma device of using above-mentioned inductance-coupled coil comprises reative cell, and reative cell top is provided with dielectric window, it is characterized in that, the top of described dielectric window is provided with inductance-coupled coil, and inductance-coupled coil is connected with the radio frequency power supply.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101125705A CN101131893B (en) | 2006-08-23 | 2006-08-23 | Inductance coupling coil and inductance coupling plasma body device |
| PCT/CN2007/002451 WO2008031321A1 (en) | 2006-08-23 | 2007-08-14 | Inductive coupling coil and inductive coupling plasma apparatus thereof |
| PCT/CN2007/002450 WO2008031320A1 (en) | 2006-08-23 | 2007-08-14 | Inductive coupling coil and inductive coupling plasma apparatus thereof |
| KR1020097001534A KR101068746B1 (en) | 2006-08-23 | 2007-08-14 | Inductive coupling coil and inductive coupling plasma apparatus thereof |
| SG2011048964A SG173346A1 (en) | 2006-08-23 | 2007-08-14 | Inductively coupled coil and inductively coupled apparatus using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101125705A CN101131893B (en) | 2006-08-23 | 2006-08-23 | Inductance coupling coil and inductance coupling plasma body device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101131893A true CN101131893A (en) | 2008-02-27 |
| CN101131893B CN101131893B (en) | 2011-12-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101125705A Active CN101131893B (en) | 2006-08-23 | 2006-08-23 | Inductance coupling coil and inductance coupling plasma body device |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101068746B1 (en) |
| CN (1) | CN101131893B (en) |
| SG (1) | SG173346A1 (en) |
| WO (2) | WO2008031320A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103906338A (en) * | 2012-12-31 | 2014-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma device |
| CN107849694A (en) * | 2015-06-15 | 2018-03-27 | 应用材料公司 | For improveing BCD and etch depth performance source RF power Split type interior loops |
| CN116590681A (en) * | 2023-06-16 | 2023-08-15 | 中科纳微真空科技(合肥)有限公司 | Radio frequency plane cathode |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101308687B1 (en) * | 2011-06-20 | 2013-09-13 | 에이피티씨 주식회사 | Plasma source for uniform plama density and plasma chamber using the same |
| CN106783539A (en) * | 2016-12-07 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | One kind reduces wafer ion dam age method and ion generator |
| CA3019433A1 (en) | 2017-10-02 | 2019-04-02 | Flexopack S.A. | Multilayer cling film |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309063A (en) * | 1993-03-04 | 1994-05-03 | David Sarnoff Research Center, Inc. | Inductive coil for inductively coupled plasma production apparatus |
| FR2790328B1 (en) * | 1999-02-26 | 2001-04-20 | Memscap | INDUCTIVE COMPONENT, INTEGRATED TRANSFORMER, IN PARTICULAR INTENDED TO BE INCORPORATED IN A RADIOFREQUENCY CIRCUIT, AND INTEGRATED CIRCUIT ASSOCIATED WITH SUCH AN INDUCTIVE COMPONENT OR INTEGRATED TRANSFORMER |
| US6685798B1 (en) * | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
| CN2726076Y (en) * | 2004-06-29 | 2005-09-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductive comping coil and its inductive coupling plasma apparatus |
| CN2785105Y (en) * | 2005-01-27 | 2006-05-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and its inductance coupling plasma equipment |
-
2006
- 2006-08-23 CN CN2006101125705A patent/CN101131893B/en active Active
-
2007
- 2007-08-14 WO PCT/CN2007/002450 patent/WO2008031320A1/en active Application Filing
- 2007-08-14 WO PCT/CN2007/002451 patent/WO2008031321A1/en active Application Filing
- 2007-08-14 SG SG2011048964A patent/SG173346A1/en unknown
- 2007-08-14 KR KR1020097001534A patent/KR101068746B1/en active IP Right Grant
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103906338A (en) * | 2012-12-31 | 2014-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma device |
| CN103906338B (en) * | 2012-12-31 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of plasma device |
| CN107849694A (en) * | 2015-06-15 | 2018-03-27 | 应用材料公司 | For improveing BCD and etch depth performance source RF power Split type interior loops |
| CN107849694B (en) * | 2015-06-15 | 2020-03-31 | 应用材料公司 | Source RF power split inner coil for improved BCD and etch depth performance |
| CN116590681A (en) * | 2023-06-16 | 2023-08-15 | 中科纳微真空科技(合肥)有限公司 | Radio frequency plane cathode |
| CN116590681B (en) * | 2023-06-16 | 2023-10-31 | 中科纳微真空科技(合肥)有限公司 | Radio frequency plane cathode |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090033877A (en) | 2009-04-06 |
| SG173346A1 (en) | 2011-08-29 |
| WO2008031321A1 (en) | 2008-03-20 |
| CN101131893B (en) | 2011-12-07 |
| WO2008031320A1 (en) | 2008-03-20 |
| KR101068746B1 (en) | 2011-09-28 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |